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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Weight | Number of Terminals | Transistor Element Material | Exterior Housing Material | Cable type | Connector | Connector pinout layout | Contacts pitch | Drain Current-Max (ID) | Electrical mounting | Ihs Manufacturer | Indicator type | Kind of connector | Nominal voltage | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Protection class | Row pitch | Spatial orientation | Standing wave ratio | Type of connector | Voltage Rated | Packaging | Part Status | Moisture Sensitivity Level (MSL) | ECCN Code | Max Operating Temperature | Min Operating Temperature | Color | Applications | Terminal Position | Terminal Form | Depth | Reach Compliance Code | Current Rating | JESD-30 Code | Configuration | Impedance | Operating Mode | Case Connection | Polarity/Channel Type | Transistor Type | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Profile | Height | Width | Radiation Hardening | RoHS Status | Lead Free |
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  | Mfr. ТипEMF60P02JAnlielectronics Тип | Excelliance MOS Corporation |
Power Field-Effect Transistor, 4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 3 | SILICON | 1 | - | socket | 2x3 | 2.54mm | 4 A | THT | EXCELLIANCE MOS CORP | - | female | - | -55 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | - | 2.54mm | straight | - | pin strips | - | - | - | - | EAR99 | - | - | - | - | DUAL | GULL WING | - | unknown | - | R-PDSO-G3 | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | P-CHANNEL | - | 0.06 Ω | 16 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | beryllium copper | - | - | - | - | - | ||
| EMF60P02J | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEMB12N03VAnlielectronics Тип | Excelliance MOS Corporation |
Power Field-Effect Transistor, 18.5A I(D), 30V, 0.0115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EDFN-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 5 | SILICON | 1 | - | - | - | - | 18.5 A | - | EXCELLIANCE MOS CORP | - | - | - | -55 °C | PLASTIC/EPOXY | SMALL OUTLINE, S-PDSO-F5 | SQUARE | SMALL OUTLINE | Contact Manufacturer | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | DUAL | FLAT | - | unknown | - | S-PDSO-F5 | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | N-CHANNEL | - | 0.0115 Ω | 74 A | 30 V | 7.2 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| EMB12N03V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEMB06K03HPAnlielectronics Тип | Excelliance MOS Corporation |
Power Field-Effect Transistor, 15A I(D), 30V, 0.0095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EDFN-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 6 | SILICON | 2 | - | - | - | - | 15 A | - | EXCELLIANCE MOS CORP | Neon bulb in housing series N-806 | - | 220 (AC), 50 Hz V | -55 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-F6 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | IP65 | - | - | - | - | - | - | - | - | EAR99 | - | - | Yellow | - | DUAL | FLAT | 43 mm | unknown | - | R-PDSO-F6 | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN SOURCE | N-CHANNEL | - | 0.0095 Ω | 60 A | 30 V | 11.25 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | 14 mm | - | - | - | ||
| EMB06K03HP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEMB20N03VAnlielectronics Тип | Excelliance MOS Corporation |
Power Field-Effect Transistor, 12A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EDFN-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 4 g | 5 | SILICON | 1 | RG58 | - | - | - | 12 A | - | EXCELLIANCE MOS CORP | - | - | - | -55 °C | PLASTIC/EPOXY | SMALL OUTLINE, S-PDSO-F5 | SQUARE | SMALL OUTLINE | Contact Manufacturer | - | - | - | VSWR - 1.1+0.002f | - | - | - | - | - | EAR99 | - | - | - | - | DUAL | FLAT | assembled - 21 mm | unknown | - | S-PDSO-F5 | SINGLE WITH BUILT-IN DIODE | 50 Ohm | ENHANCEMENT MODE | DRAIN | N-CHANNEL | - | 0.02 Ω | 48 A | 30 V | 3.2 mJ | METAL-OXIDE SEMICONDUCTOR | - | 8 mm | - | - | - | - | ||
| EMB20N03V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNE5820M53-T1-AAnlielectronics Тип | CEL |
TRANS P CH 6V 17MA 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Tin | Surface Mount | Surface Mount | 3-SMD, Flat Lead | - | 3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 6V | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | - | 95°C | -40°C | - | Microphone | - | - | - | - | 17mA | - | - | - | - | - | - | P-Channel | - | - | - | - | - | - | - | - | No | RoHS Compliant | Lead Free | ||
| NE5820M53-T1-A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNE5820M53-AAnlielectronics Тип | CEL |
TRANS P CH 6V 17MA 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Tin | Surface Mount | Surface Mount | 3-SMD, Flat Lead | - | 3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 6V | Bag | Obsolete | 1 (Unlimited) | - | 95°C | -40°C | - | Microphone | - | - | - | - | 17mA | - | - | - | - | - | - | P-Channel | - | - | - | - | - | - | - | - | No | RoHS Compliant | - | ||
| NE5820M53-A |
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