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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | ECCN Code | Terminal Position | Terminal Form | Reach Compliance Code | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | FET Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипPD4M440LAnlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | 21 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | MODULE-7 | RECTANGULAR | FLANGE MOUNT | Lifetime Buy | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.21 Ω | 60 A | 500 V | METAL-OXIDE SEMICONDUCTOR | ||
| PD4M440L | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP2H4M441LAnlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 21A I(D), 450V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | SILICON | 21 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | MODULE-8 | RECTANGULAR | FLANGE MOUNT | Lifetime Buy | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X8 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.21 Ω | 60 A | 450 V | METAL-OXIDE SEMICONDUCTOR | ||
| P2H4M441L | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP2H4M440LAnlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | SILICON | 21 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Obsolete | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X8 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.21 Ω | 60 A | 500 V | METAL-OXIDE SEMICONDUCTOR | ||
| P2H4M440L | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP2H7M441LAnlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 35A I(D), 450V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | SILICON | 35 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | MODULE-8 | RECTANGULAR | FLANGE MOUNT | Lifetime Buy | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X8 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.12 Ω | 100 A | 450 V | METAL-OXIDE SEMICONDUCTOR | ||
| P2H7M441L | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPD10M441HAnlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 60A I(D), 450V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | 60 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Obsolete | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.085 Ω | 170 A | 450 V | METAL-OXIDE SEMICONDUCTOR | ||
| PD10M441H | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPD10M440HAnlielectronics Тип | KYOCERA Corporation |
Description: Power Field-Effect Transistor, 60A I(D), 500V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | 60 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Active | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.085 Ω | 170 A | 500 V | METAL-OXIDE SEMICONDUCTOR | ||
| PD10M440H | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPDM755HAAnlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 53A I(D), 500V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | 53 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Active | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.065 Ω | 150 A | 500 V | METAL-OXIDE SEMICONDUCTOR | ||
| PDM755HA | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP2H7M440HAnlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | SILICON | 35 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Active | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X8 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.12 Ω | 100 A | 500 V | METAL-OXIDE SEMICONDUCTOR | ||
| P2H7M440H | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP2H7M440LAnlielectronics Тип | KYOCERA Corporation |
Description: Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | SILICON | 35 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Obsolete | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X8 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.12 Ω | 100 A | 500 V | METAL-OXIDE SEMICONDUCTOR | ||
| P2H7M440L | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPD7M441LAnlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 35A I(D), 450V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | 35 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | MODULE-7 | RECTANGULAR | FLANGE MOUNT | Lifetime Buy | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.12 Ω | 100 A | 450 V | METAL-OXIDE SEMICONDUCTOR | ||
| PD7M441L | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP2HM1102HAnlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 80A I(D), 250V, 0.033ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | SILICON | 80 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Active | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X8 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.033 Ω | 220 A | 250 V | METAL-OXIDE SEMICONDUCTOR | ||
| P2HM1102H | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPD7M440HAnlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | 35 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Active | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.12 Ω | 100 A | 500 V | METAL-OXIDE SEMICONDUCTOR | ||
| PD7M440H | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPD7M441HAnlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 35A I(D), 450V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | 35 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | MODULE-7 | RECTANGULAR | FLANGE MOUNT | Lifetime Buy | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.12 Ω | 100 A | 450 V | METAL-OXIDE SEMICONDUCTOR | ||
| PD7M441H | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP2HM505HAAnlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | SILICON | 35 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Active | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X8 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.12 Ω | 100 A | 500 V | METAL-OXIDE SEMICONDUCTOR | ||
| P2HM505HA | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPD10M441LAnlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 50A I(D), 450V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | 50 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | MODULE-7 | RECTANGULAR | FLANGE MOUNT | Lifetime Buy | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.085 Ω | 140 A | 450 V | METAL-OXIDE SEMICONDUCTOR | ||
| PD10M441L | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPDM5001Anlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 390A I(D), 100V, 0.00056ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | 390 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Active | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ENHANCEMENT MODE | ISOLATED | - | N-CHANNEL | 0.00056 Ω | 1000 A | 100 V | METAL-OXIDE SEMICONDUCTOR | ||
| PDM5001 | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPD4M441HAnlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 21A I(D), 450V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | 21 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | - | RECTANGULAR | FLANGE MOUNT | Lifetime Buy | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.21 Ω | 60 A | 450 V | METAL-OXIDE SEMICONDUCTOR | ||
| PD4M441H | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP2H10M440HAnlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 60A I(D), 500V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | SILICON | 60 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Active | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X8 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.085 Ω | 170 A | 500 V | METAL-OXIDE SEMICONDUCTOR | ||
| P2H10M440H | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPDM1405HAAnlielectronics Тип | KYOCERA Corporation |
Description: Power Field-Effect Transistor, 100A I(D), 500V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | 100 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | - | RECTANGULAR | FLANGE MOUNT | Lifetime Buy | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.04 Ω | 280 A | 500 V | METAL-OXIDE SEMICONDUCTOR | ||
| PDM1405HA | |||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP2H4M440HAnlielectronics Тип | KYOCERA Corporation |
Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | SILICON | 21 A | KYOCERA CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Active | EAR99 | UPPER | UNSPECIFIED | unknown | R-XUFM-X8 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.21 Ω | 60 A | 500 V | METAL-OXIDE SEMICONDUCTOR | ||
| P2H4M440H |
Индекс :
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