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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Surface Mount | Material | Weight | Number of Terminals | Transistor Element Material | Exterior Housing Material | Characteristics | Chip | Completeness | Cross | Current consumption | Description | Drain Current-Max (ID) | Feature | Gross Weight | Ihs Manufacturer | Inner Diameter | Maximum voltage | Noal current | Noal voltage | Number of terals | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Support | Thread | Working temperature range | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Color | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Output Voltage | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Power | Feedback Cap-Max (Crss) | Saturation Current | Input Voltage | Module Type | Diameter | Height | Width |
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  | Mfr. ТипIRFP460PBFAnlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | NO | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | 20 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | TO-247AC | Yes | - | - | - | e3 | Yes | EAR99 | - | Matte Tin (Sn) - annealed | - | SINGLE | THROUGH-HOLE | - | - | not_compliant | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-247AC | 0.27 Ω | 80 A | 500 V | 960 mJ | METAL-OXIDE SEMICONDUCTOR | 280 W | - | 350 pF | 1 | - | - | - | - | - | ||
| IRFP460PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSIR468DP-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 22.7A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 5 | SILICON | 1 | - | - | - | - | - | - | 22.7 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | - | UNSPECIFIED | ROHS COMPLIANT, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | Yes | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | DUAL | C BEND | - | - | compliant | - | - | R-XDSO-C5 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.0057 Ω | 70 A | 30 V | 61 mJ | METAL-OXIDE SEMICONDUCTOR | 50 W | - | - | 1 | - | - | - | - | - | ||
| SIR468DP-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSISH892BDN-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | 12/24 (DC) Vmin | 4, non-insulated blade terminal 6.3min | - | - | - | - | - | - | Active | - | Yes | - | - | - | - | - | EAR99 | connector (socket) series 70413 | Pure Matte Tin (Sn) - annealed | - | - | - | 260 | 24.8 mm | not_compliant | 40 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 13.8 (housing) mm | 27.7 (with flanges); 18.75 (housing) mm | ||
| SISH892BDN-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7234DP-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 24.8A I(D), 12V, 0.005ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | YES | - | - | 6 | SILICON | 2 | - | - | - | - | - | - | 24.8 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | -55 °C | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | DUAL | C BEND | 260 | - | compliant | 30 | - | R-XDSO-C6 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.005 Ω | 80 A | 12 V | - | METAL-OXIDE SEMICONDUCTOR | 46 W | - | - | 1 | - | - | - | - | - | ||
| SI7234DP-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI2318CDS-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 5.6A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks, 3 Days | YES | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | 5.6 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | TO-236, SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | DUAL | GULL WING | - | - | compliant | - | - | R-PDSO-G3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-236AB | 0.042 Ω | - | 40 V | - | METAL-OXIDE SEMICONDUCTOR | 2.1 W | - | 30 pF | 1 | - | - | - | - | - | ||
| SI2318CDS-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI2319DS-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 2.3A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | 2.3 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | TO-236, SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | Yes | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | TO-236AB | 0.082 Ω | - | 40 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | 65 pF | 1 | - | - | - | - | - | ||
| SI2319DS-T1-E3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI3440DV-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 1.2A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 6 | SILICON | 1 | - | - | - | - | - | - | 1.2 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 | RECTANGULAR | SMALL OUTLINE | End Of Life | - | Yes | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G6 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | MO-193C | 0.375 Ω | - | 150 V | - | METAL-OXIDE SEMICONDUCTOR | 1.14 W | - | - | 1 | - | - | - | - | - | ||
| SI3440DV-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7220DN-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 3.4A I(D), 60V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 6 | SILICON | 2 | - | - | - | - | - | - | 3.4 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | - | UNSPECIFIED | ROHS COMPLIANT, 1212-8, POWERPAK-8 | SQUARE | SMALL OUTLINE | Active | - | Yes | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | DUAL | C BEND | 260 | - | compliant | 30 | - | S-XDSO-C6 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.06 Ω | 20 A | 60 V | 6.1 mJ | METAL-OXIDE SEMICONDUCTOR | 2.6 W | - | - | 1 | - | - | - | - | - | ||
| SI7220DN-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI2308BDS-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | 1.9 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | e3 | - | EAR99 | digital LED voltmeter DMS series | MATTE TIN | glow - white | DUAL | GULL WING | 260 | 47.1 mm | compliant | 30 | - | R-PDSO-G3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-236 | 0.156 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 1.66 W | - | - | 1 | - | - | housing - 20.4 mm | 30.1 mm | 30.1 mm | ||
| SI2308BDS-T1-E3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSUD50P04-08-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 50A I(D), 40V, 0.0081ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks, 4 Days | YES | - | - | 2 | SILICON | 1 | - | - | device; ring current sensor Ф14.5/ 32.5 mm; h - 12.5 mm | - | - | - | 50 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | -25…+65 °C | e3 | - | EAR99 | digital LED volt-ammeter DMS series (AD16-22VAM R) | Matte Tin (Sn) | light color - red | SINGLE | GULL WING | 260 | 51 mm | compliant | 30 | - | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | TO-252 | 0.0081 Ω | 100 A | 40 V | 106 mJ | METAL-OXIDE SEMICONDUCTOR | 73.5 W | - | - | 1 | - | - | display - 28.5 mm | - | - | ||
| SUD50P04-08-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI4848DY-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 2.7A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 2.62 | 8 | SILICON | 1 | - | - | - | - | - | - | 2.7 A | - | - | VISHAY INTERTECHNOLOGY INC | - | 220 VAC or 24 VDC | 2.5 Amin | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | Yes | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) - annealed | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G8 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | 0.085 Ω | - | 150 V | - | METAL-OXIDE SEMICONDUCTOR | 3 W | - | - | 1 | - | - | - | case 15.6 mm, leads 14 mm | 10.2 mm | ||
| SI4848DY-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI1308EDL-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | 1.4 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SC-70, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G3 | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.132 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 0.5 W | - | 11 pF | 1 | - | - | - | - | - | ||
| SI1308EDL-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSIA923EDJ-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | YES | - | - | 6 | SILICON | 2 | - | - | - | - | - | AC Motor Speed Controller (up to 4 kW) | 4.5 A | - | 36.60 | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | SC-70, 6 PIN | SQUARE | SMALL OUTLINE | Active | - | Yes | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) - annealed | - | DUAL | NO LEAD | - | 46 mm | compliant | - | - | S-PDSO-N6 | Not Qualified | 50…250 V | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 0.054 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 7.8 W | Load 2000 W | - | - | 110…250 V | AC Motor Speed Controller | - | - | 35 mm | ||
| SIA923EDJ-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF9540Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | 3 | SILICON | 1 | display - 2 lines of 16 characters (matrix 5 x 8 points), blue backlight | HD44780 | - | - | not more than 2; backlight - 45 mA | Character LCD display 1602 | 19 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 175 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Obsolete | - | No | does not support Cyrillic | - | - | e0 | No | EAR99 | - | TIN LEAD | - | SINGLE | THROUGH-HOLE | - | 82 mm | unknown | - | - | R-PSFM-T3 | Not Qualified | - | SINGLE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | TO-220AB | 0.2 Ω | 76 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | 150 W | - | - | - | - | - | - | 18 mm | 35 mm | ||
| IRF9540 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI4825DDY-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 14.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | steel | - | 8 | SILICON | 1 | - | - | - | - | - | - | 14.9 A | - | 55.00 | VISHAY INTERTECHNOLOGY INC | fastening hole (D2) - 10 mm | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | M6 | - | e3 | - | EAR99 | Talrep hook-ring series DIN 1480 | MATTE TIN | - | DUAL | GULL WING | - | hook grip (D1) - 10 mm | compliant | - | - | R-PDSO-G8 | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | MS-012AA | 0.0125 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 5 W | - | - | 1 | - | - | - | - | - | ||
| SI4825DDY-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI4056ADY-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 8.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | YES | phospate steel (black) | - | 8 | SILICON | 1 | - | - | - | cross-type Pz2 (Ph) | - | - | 8.3 A | sharp tip | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | 3.5x41; rare | - | - | - | EAR99 | Screw drywall-wood with countersunk head | - | - | DUAL | GULL WING | - | - | unknown | - | - | R-PDSO-G8 | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.0292 Ω | - | 100 V | - | METAL-OXIDE SEMICONDUCTOR | 5 W | - | 7.2 pF | - | - | - | - | - | - | ||
| SI4056ADY-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI1016CX-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | YES | - | - | 6 | SILICON | 2 | - | - | - | - | - | - | 0.6 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | DUAL | FLAT | 260 | - | compliant | 30 | - | R-PDSO-F6 | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL AND P-CHANNEL | - | 0.396 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.22 W | - | - | 1 | - | - | - | - | - | ||
| SI1016CX-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7216DN-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 6.5A I(D), 40V, 0.032ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 6 | SILICON | 2 | - | - | - | - | - | - | 6.5 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | - | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | SQUARE | SMALL OUTLINE | Active | - | Yes | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | DUAL | C BEND | 260 | - | compliant | 30 | - | S-XDSO-C6 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.032 Ω | 20 A | 40 V | 5 mJ | METAL-OXIDE SEMICONDUCTOR | 20.8 W | - | - | 1 | - | - | - | - | - | ||
| SI7216DN-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSIS407DN-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 25A I(D), 20V, 0.0102ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | YES | - | - | 5 | SILICON | 1 | - | - | - | - | - | - | 25 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | - | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | SQUARE | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | EAR99 | - | - | - | DUAL | C BEND | 260 | - | compliant | 40 | - | S-XDSO-C5 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 0.0102 Ω | 40 A | 20 V | 20 mJ | METAL-OXIDE SEMICONDUCTOR | 33 W | - | - | - | - | - | - | - | - | ||
| SIS407DN-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI2307BDS-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | 2.5 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | TO-236, SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | Yes | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | P-CHANNEL | TO-236AB | 0.078 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | 75 pF | 1 | - | - | - | - | - | ||
| SI2307BDS-T1-E3 |
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