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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Number of Pins | Supplier Device Package | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Number of Elements | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Max Power Dissipation | Terminal Position | Terminal Form | Reach Compliance Code | Configuration | Element Configuration | Operating Mode | Power Dissipation | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Input Capacitance | FET Technology | FET Feature | Drain to Source Resistance | Rds On Max | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипALD1115SALAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET N/P-CH 10.6V 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | - | SILICON | - | 2 | - | 0°C~70°C TJ | Tube | 2006 | - | yes | Active | 1 (Unlimited) | 8 | EAR99 | - | - | 500mW | - | GULL WING | unknown | - | Dual | ENHANCEMENT MODE | 500mW | - | N and P-Channel Complementary | SWITCHING | 1800 Ω @ 5V | 1V @ 1μA | 3pF @ 5V | 10.6V | N-CHANNEL AND P-CHANNEL | -2mA | 13.2V | 500Ohm | -12V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | ROHS3 Compliant | ||
| ALD1115SAL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипALD110804SCLAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 16-SOIC (0.154, 3.90mm Width) | 16 | - | - | 12mA 3mA | - | 10 ns | 0°C~70°C TJ | Tube | 2006 | EPAD® | yes | Active | 1 (Unlimited) | - | - | - | - | 500mW | - | - | unknown | - | - | - | 500mW | - | 4 N-Channel, Matched Pair | - | 500 Ω @ 4.4V | 420mV @ 1μA | 2.5pF @ 5V | - | - | 3mA | 10.6V | - | 10V | - | - | Standard | - | - | ROHS3 Compliant | ||
| ALD110804SCL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипALD1107PBLAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET 4P-CH 10.6V 14DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 14-DIP (0.300, 7.62mm) | 14 | - | SILICON | - | 4 | - | 0°C~70°C TJ | Tube | 2012 | - | yes | Active | 1 (Unlimited) | 14 | EAR99 | - | - | 500mW | DUAL | - | unknown | COMMON SUBSTRATE, 4 ELEMENTS | - | ENHANCEMENT MODE | 500mW | - | 4 P-Channel, Matched Pair | SWITCHING | 1800 Ω @ 5V | 1V @ 1μA | 3pF @ 5V | 10.6V | - | 2mA | -13.2V | - | -12V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | ROHS3 Compliant | ||
| ALD1107PBL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипALD110800APCLAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 16-DIP (0.300, 7.62mm) | 16 | 16-PDIP | - | - | - | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD®, Zero Threshold™ | - | Active | 1 (Unlimited) | - | - | 70°C | 0°C | 500mW | - | - | - | - | - | - | 500mW | 500mW | 4 N-Channel, Matched Pair | - | 500Ohm @ 4V | 10mV @ 1μA | 2.5pF @ 5V | 10.6V | - | 12mA | 10.6V | - | 10V | 2.5pF | - | Standard | 500Ohm | 500 Ω | ROHS3 Compliant | ||
| ALD110800APCL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипALD110900APALAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET Dual EPAD(R) N-Ch
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | 8-PDIP | - | - | - | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD®, Zero Threshold™ | - | Active | 1 (Unlimited) | - | - | 70°C | 0°C | 500mW | - | - | - | - | Dual | - | 500mW | 500mW | 2 N-Channel (Dual) Matched Pair | - | 500Ohm @ 4V | 10mV @ 1μA | 2.5pF @ 5V | 10.6V | - | 12mA | 10.6V | - | 10V | 2.5pF | - | Standard | 500Ohm | 500 Ω | ROHS3 Compliant | ||
| ALD110900APAL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипALD1117PALAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | - | SILICON | - | 2 | - | 0°C~70°C TJ | Tube | 2005 | - | yes | Active | 1 (Unlimited) | 8 | EAR99 | - | - | 500mW | - | - | unknown | COMMON SUBSTRATE, 2 ELEMENTS | - | ENHANCEMENT MODE | 500mW | - | 2 P-Channel (Dual) Matched Pair | SWITCHING | 1800 Ω @ 5V | 1V @ 1μA | 3pF @ 5V | 10.6V | - | 2mA | -13.2V | - | -12V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | ROHS3 Compliant | ||
| ALD1117PAL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипALD110908ASALAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | - | 12mA 3mA | - | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD® | - | Active | 1 (Unlimited) | - | - | 70°C | 0°C | 500mW | - | - | - | - | Dual | - | 500mW | 500mW | 2 N-Channel (Dual) Matched Pair | - | 500Ohm @ 4.8V | 810mV @ 1μA | 2.5pF @ 5V | 10.6V | - | 3mA | 10.6V | - | 10V | 2.5pF | - | Standard | 500Ohm | 500 Ω | ROHS3 Compliant | ||
| ALD110908ASAL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипALD1102PALAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | 8-PDIP | - | - | - | - | 0°C~70°C TJ | Tube | 2003 | - | - | Active | 1 (Unlimited) | - | - | 70°C | 0°C | 500mW | - | - | - | - | Dual | - | 500mW | 500mW | 2 P-Channel (Dual) Matched Pair | - | 270Ohm @ 5V | 1.2V @ 10μA | 10pF @ 5V | 10.6V | - | 16mA | -13.2V | - | -12V | - | - | Standard | 180Ohm | 270 Ω | ROHS3 Compliant | ||
| ALD1102PAL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипALD110900PALAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | 8-PDIP | - | - | - | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD®, Zero Threshold™ | - | Active | 1 (Unlimited) | - | - | 70°C | 0°C | 500mW | - | - | - | - | Dual | - | 500mW | 500mW | 2 N-Channel (Dual) Matched Pair | - | 500Ohm @ 4V | 20mV @ 1μA | 2.5pF @ 5V | 10.6V | - | 12mA | 10.6V | - | 10V | 2.5pF | - | Standard | 500Ohm | 500 Ω | ROHS3 Compliant | ||
| ALD110900PAL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипALD110914PALAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | - | - | 12mA 3mA | - | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD® | yes | Active | 1 (Unlimited) | - | - | - | - | 500mW | - | - | unknown | - | Dual | - | 500mW | - | 2 N-Channel (Dual) Matched Pair | - | 500 Ω @ 5.4V | 1.42V @ 1μA | 2.5pF @ 5V | - | - | 3mA | 10.6V | - | 10V | - | - | Standard | - | - | ROHS3 Compliant | ||
| ALD110914PAL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипALD110808PCLAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 16-DIP (0.300, 7.62mm) | 16 | 16-PDIP | - | 12mA 3mA | - | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD® | - | Active | 1 (Unlimited) | - | - | 70°C | 0°C | 500mW | - | - | - | - | - | - | 500mW | 500mW | 4 N-Channel, Matched Pair | - | 500Ohm @ 4.8V | 820mV @ 1μA | 2.5pF @ 5V | 10.6V | - | 3mA | 10.6V | - | 10V | 2.5pF | - | Standard | 500Ohm | 500 Ω | ROHS3 Compliant | ||
| ALD110808PCL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипALD1102SALAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | - | - | - | - | 0°C~70°C TJ | Tube | 2003 | - | - | Active | 1 (Unlimited) | - | - | 70°C | 0°C | 500mW | - | - | - | - | Dual | - | 500mW | 500mW | 2 P-Channel (Dual) Matched Pair | - | 270Ohm @ 5V | 1.2V @ 10μA | 10pF @ 5V | 10.6V | - | 16mA | -13.2V | - | -12V | - | - | Standard | 180Ohm | 270 Ω | ROHS3 Compliant | ||
| ALD1102SAL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипALD1101SALAnlielectronics Тип | Advanced Linear Devices Inc. |
Precision Matched Small Signal MOSFET Arrays Dual N-Channel Pair
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | - | - | - | - | 0°C~70°C TJ | Tube | 2003 | - | - | Active | 1 (Unlimited) | - | - | 70°C | 0°C | 500mW | - | - | - | - | Dual | - | 500mW | 500mW | 2 N-Channel (Dual) Matched Pair | - | 75Ohm @ 5V | 1V @ 10μA | - | 10.6V | - | 40mA | 13.2V | - | -12V | - | - | Standard | 75Ohm | 75 Ω | ROHS3 Compliant | ||
| ALD1101SAL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипALD111933PALAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | - | SILICON | - | 2 | 10 ns | 0°C~70°C TJ | Tube | 2006 | EPAD® | yes | Active | 1 (Unlimited) | 8 | EAR99 | - | - | 500mW | - | - | unknown | - | Dual | ENHANCEMENT MODE | 500mW | - | 2 N-Channel (Dual) Matched Pair | SWITCHING | 500 Ω @ 5.9V | 3.35V @ 1μA | 2.5pF @ 5V | - | - | 6.9mA | 10.6V | - | 10V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | ROHS3 Compliant | ||
| ALD111933PAL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипALD1115PALAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET N/P-CH 10.6V 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | - | SILICON | - | 2 | - | 0°C~70°C TJ | Tube | 2006 | - | yes | Active | 1 (Unlimited) | 8 | EAR99 | - | - | 500mW | - | - | unknown | - | Dual | ENHANCEMENT MODE | 500mW | - | N and P-Channel Complementary | SWITCHING | 1800 Ω @ 5V | 1V @ 1μA | 3pF @ 5V | 10.6V | N-CHANNEL AND P-CHANNEL | 2mA | 13.2V | 500Ohm | -12V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | ROHS3 Compliant | ||
| ALD1115PAL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипALD310702SCLAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 16-SOIC (0.154, 3.90mm Width) | - | 16-SOIC | - | - | - | - | 0°C~70°C | Tube | - | EPAD®, Zero Threshold™ | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | - | - | - | 500mW | 4 P-Channel, Matched Pair | - | - | 180mV @ 1μA | 2.5pF @ 5V | 8V | - | - | - | - | - | - | - | Standard | - | - | ROHS3 Compliant | ||
| ALD310702SCL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипALD1115MALAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET N/P-CH 10.6V 8MSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | Surface Mount | Surface Mount | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | - | - | - | - | - | - | 0°C~70°C TJ | Tube | 2006 | - | yes | Obsolete | 1 (Unlimited) | - | - | - | - | 500mW | - | - | unknown | - | Dual | - | 500mW | - | N and P-Channel Complementary | - | 1800 Ω @ 5V | 1V @ 1μA | 3pF @ 5V | 10.6V | - | -2mA | 13.2V | - | -12V | - | - | Standard | - | - | RoHS Compliant | ||
| ALD1115MAL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипALD110904SALAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | - | - | 12mA 3mA | - | 10 ns | 0°C~70°C TJ | Tube | 2014 | EPAD® | yes | Active | 1 (Unlimited) | - | - | - | - | 500mW | - | - | unknown | - | Dual | - | 500mW | - | 2 N-Channel (Dual) Matched Pair | - | 500 Ω @ 4.4V | 420mV @ 1μA | 2.5pF @ 5V | - | - | 3mA | 10.6V | - | 10V | - | - | Standard | - | - | ROHS3 Compliant | ||
| ALD110904SAL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипALD110904PALAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | - | - | 12mA 3mA | - | 10 ns | 0°C~70°C TJ | Tube | 2006 | EPAD® | yes | Active | 1 (Unlimited) | - | - | - | - | 500mW | - | - | unknown | - | Dual | - | 500mW | - | 2 N-Channel (Dual) Matched Pair | - | 500 Ω @ 4.4V | 420mV @ 1μA | 2.5pF @ 5V | - | - | 3mA | 10.6V | - | 10V | - | - | Standard | - | - | ROHS3 Compliant | ||
| ALD110904PAL | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипALD110814SCLAnlielectronics Тип | Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 16-SOIC (0.154, 3.90mm Width) | 16 | - | - | 12mA 3mA | - | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD® | yes | Active | 1 (Unlimited) | - | - | - | - | 500mW | - | - | unknown | - | - | - | 500mW | - | 4 N-Channel, Matched Pair | - | 500 Ω @ 5.4V | 1.42V @ 1μA | 2.5pF @ 5V | - | - | 3mA | 10.6V | - | 10V | - | - | Standard | - | - | ROHS3 Compliant | ||
| ALD110814SCL |
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