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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Transistor Element Material | Base Product Number | Brand | Continuous Drain Current Id | Current - Continuous Drain (Id) @ 25℃ | Factory Pack QuantityFactory Pack Quantity | Id - Continuous Drain Current | Manufacturer | Maximum Operating Temperature | Mfr | Minimum Operating Temperature | Mounting Styles | Number of Elements | Package | Pd - Power Dissipation | Product Status | Rds On - Drain-Source Resistance | RoHS | Transistor Polarity | Turn Off Delay Time | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Unit Weight | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Voltage, Rating | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Temperature Coefficient | Type | Resistance | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Subcategory | Power Rating | Max Power Dissipation | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Resistor Type | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Number of Channels | Voltage | Element Configuration | Current | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Product Type | Continuous Drain Current (ID) | Threshold Voltage | Gate to Source Voltage (Vgs) | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Input Capacitance | DS Breakdown Voltage-Min | Channel Type | FET Technology | Resistance Tolerance | FET Feature | Drain to Source Resistance | Rds On Max | Product | Product Category | Product Length | Product Width | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
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  | Mfr. ТипTC6320TG-GAnlielectronics Тип | Microchip Technology |
Trans MOSFET N/P-CH 200V 8-Pin SOIC N T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 84.99187mg | SILICON | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | 20 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | - | e3 | - | Active | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | - | - | - | - | - | - | - | DUAL | GULL WING | 260 | - | 40 | TC6320 | - | - | - | - | 2 | - | - | - | ENHANCEMENT MODE | - | - | 10 ns | - | N and P-Channel | SWITCHING | 7 Ω @ 1A, 10V | 2V @ 1mA | 110pF @ 25V | - | 15ns | - | N-CHANNEL AND P-CHANNEL | 15 ns | - | -2A | 2V | - | - | 7Ohm | 200V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | 1.65mm | 4.9mm | 3.9mm | No | No SVHC | ROHS3 Compliant | - | ||
| TC6320TG-G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипTC6320K6-GAnlielectronics Тип | Microchip Technology |
Trans Mosfet N/p-ch 200V 8-PIN SOIC T/r
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | Tin | Surface Mount | Surface Mount | 8-VDFN Exposed Pad | - | 8 | - | 37.393021mg | SILICON | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | 20 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e3 | - | Active | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | - | - | - | - | - | - | - | DUAL | - | 260 | - | 40 | TC6320 | - | - | - | - | 2 | - | - | - | ENHANCEMENT MODE | - | - | 10 ns | - | N and P-Channel | SWITCHING | 7 Ω @ 1A, 10V | 2V @ 1mA | 110pF @ 25V | - | 15ns | - | N-CHANNEL AND P-CHANNEL | 15 ns | - | 5.2A | - | - | - | 7Ohm | 200V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | 1.37mm | 4.89mm | 3.91mm | No | - | ROHS3 Compliant | - | ||
| TC6320K6-G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипTC8020K6-GAnlielectronics Тип | Microchip Technology |
Trans MOSFET N/P-CH 200V 56-Pin QFN EP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks | - | Tin | Surface Mount | Surface Mount | 56-VFQFN Exposed Pad | - | 56 | - | 191.387631mg | SILICON | - | - | - | - | - | - | - | - | - | - | - | 6 | - | - | - | - | - | - | 20 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tray | 2012 | - | e4 | - | Active | 3 (168 Hours) | 56 | EAR99 | - | - | - | NICKEL PALLADIUM GOLD | - | - | - | - | - | - | - | QUAD | - | 260 | - | 40 | - | - | - | - | COMPLEX | 12 | - | - | - | ENHANCEMENT MODE | - | - | 10 ns | - | 6 N and 6 P-Channel | SWITCHING | 8 Ω @ 1A, 10V | 2.4V @ 1mA | 50pF @ 25V | - | 15ns | 200V | N-CHANNEL AND P-CHANNEL | 15 ns | - | - | - | - | - | 8Ohm | -200V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | - | ||
| TC8020K6-G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDN2625DK6-GAnlielectronics Тип | Microchip Technology |
MOSFET N-CHANNEL DEPLETION MODE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | Surface Mount | 8-VDFN Exposed Pad | - | - | - | 37.393021mg | SILICON | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | 10 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tray | 2013 | - | e3 | - | Active | 3 (168 Hours) | 8 | EAR99 | - | - | 3.5Ohm | MATTE TIN | - | - | LOW THRESHOLD | - | - | - | - | - | NO LEAD | 260 | - | 40 | - | - | R-PDSO-N8 | Not Qualified | - | 2 | 250V | Dual | 11A | - | - | DRAIN | 10 ns | - | 2 N-Channel (Dual) | SWITCHING | 3.5 Ω @ 1A, 0V | - | 1000pF @ 25V | 7.04nC @ 1.5V | 20ns | - | - | 20 ns | - | 1.1A | - | 20V | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Depletion Mode | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DN2625DK6-G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипTC8220K6-GAnlielectronics Тип | Microchip Technology |
Two Pair N- And P-channel Enhancement-mode Mosfet
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 3 Weeks | - | - | Surface Mount | Surface Mount | 12-VFDFN Exposed Pad | - | 12 | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | 4 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e4 | - | Active | 2 (1 Year) | 12 | EAR99 | - | - | - | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | - | - | - | - | DUAL | NO LEAD | 260 | - | 40 | - | - | - | Not Qualified | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | - | - | - | 2 N and 2 P-Channel | SWITCHING | 6 Ω @ 1A, 10V | 2.4V @ 1mA | 56pF @ 25V | - | - | 200V | N-CHANNEL AND P-CHANNEL | - | - | - | - | - | - | 7Ohm | - | - | 200V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| TC8220K6-G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипTD9944TG-GAnlielectronics Тип | Microchip Technology |
Trans MOSFET N-CH 240V 8-Pin SOIC N T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 5 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 84.99187mg | SILICON | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | 20 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e3 | - | Active | 1 (Unlimited) | 8 | EAR99 | - | - | - | Matte Tin (Sn) - annealed | - | - | LOW THRESHOLD | - | - | - | - | - | GULL WING | 260 | - | 40 | - | - | - | Not Qualified | SINGLE WITH BUILT-IN DIODE | 2 | - | - | - | ENHANCEMENT MODE | - | - | 10 ns | - | 2 N-Channel (Dual) | SWITCHING | 6 Ω @ 500mA, 10V | 2V @ 1mA | 125pF @ 25V | - | 10ns | - | - | 10 ns | - | 1A | - | 20V | - | 6Ohm | 240V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| TD9944TG-G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTC7920K6-GAnlielectronics Тип | Microchip Technology |
TWO PAIR, N- AND P-CH ENHANCEMENT-MODE MOSFET w/DRAIN-DIODES12 VDFN 4x4x1.0mm T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | - | Tin | Surface Mount | Surface Mount | 12-VFDFN Exposed Pad | - | 12 | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | 4 | - | - | - | - | - | - | 20 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | - | e4 | - | Active | 1 (Unlimited) | 12 | EAR99 | - | - | - | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | - | - | - | - | DUAL | NO LEAD | 260 | - | 40 | - | - | - | Not Qualified | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | - | 10 ns | - | 2 N and 2 P-Channel | SWITCHING | 10 Ω @ 1A, 10V | 2.4V @ 1mA | 52pF @ 25V | - | 15ns | 200V | N-CHANNEL AND P-CHANNEL | 15 ns | - | - | - | - | - | 7Ohm | - | - | 200V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| TC7920K6-G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTC2320TG-GAnlielectronics Тип | Microchip Technology |
Mosfet, N And P Channel, 200V , 8 SOIC 3.90MM(.150IN) T/r
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 3 Weeks | - | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 84.99187mg | SILICON | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | 20 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | - | e3 | - | Active | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | - | - | LOW THRESHOLD | - | - | - | - | DUAL | GULL WING | 260 | - | 40 | - | - | - | - | - | 2 | - | - | - | ENHANCEMENT MODE | - | - | 10 ns | - | N and P-Channel | SWITCHING | 7 Ω @ 1A, 10V | 2V @ 1mA | 110pF @ 25V | - | 15ns | - | N-CHANNEL AND P-CHANNEL | 15 ns | - | 2A | - | 20V | - | 7Ohm | 200V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | 1.65mm | 4.9mm | 3.9mm | No | - | ROHS3 Compliant | - | ||
| TC2320TG-G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTC6215TG-GAnlielectronics Тип | Microchip Technology |
N & P-CHANNEL ENHANCEMENT-MODE DUAL MOSFET8 SOIC 3.90mm(.150in) T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 84.99187mg | SILICON | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | 17.2 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | - | e3 | - | Active | 1 (Unlimited) | 8 | EAR99 | - | - | - | Matte Tin (Sn) - annealed | - | - | - | - | - | - | - | - | GULL WING | 260 | - | 40 | TC621 | - | - | Not Qualified | - | 2 | - | Dual | - | ENHANCEMENT MODE | - | - | 2.5 ns | - | N and P-Channel | SWITCHING | 4 Ω @ 2A, 10V | 2V @ 1mA | 120pF @ 25V | - | 2.3ns | 150V | N-CHANNEL AND P-CHANNEL | 11.3 ns | - | 36A | - | 20V | - | 5Ohm | -150V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | 1.65mm | 4.9mm | 3.8mm | - | - | ROHS3 Compliant | - | ||
| TC6215TG-G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTC1550TG-GAnlielectronics Тип | Microchip Technology |
MOSFET 500V N&P 60/125 Ohm
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 84.99187mg | SILICON | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | 15 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | - | e3 | - | Active | 1 (Unlimited) | 8 | - | - | - | - | Matte Tin (Sn) - annealed | - | - | FAST SWITCHNG | - | - | - | - | - | GULL WING | 260 | - | 40 | - | - | - | Not Qualified | - | 2 | - | Dual | - | ENHANCEMENT MODE | - | - | 10 ns | - | N and P-Channel | AMPLIFIER | 60 Ω @ 50mA, 10V | 4V @ 1mA | 55pF @ 25V | - | 10ns | - | N-CHANNEL AND P-CHANNEL | 10 ns | - | 16A | - | 20V | 350A | - | 500V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | 1.75mm | 4.9mm | 3.9mm | - | - | ROHS3 Compliant | - | ||
| TC1550TG-G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипTC6321T-V/9UAnlielectronics Тип | Microchip Technology |
MOSFET N/P-CH 200V 2A 8VDFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | - | - | Surface Mount | 8-VDFN Exposed Pad | YES | - | - | - | SILICON | - | - | - | 2A Ta | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~175°C | Tape & Reel (TR) | - | - | - | - | Active | 1 (Unlimited) | 8 | - | - | - | - | - | - | - | - | - | - | - | - | DUAL | NO LEAD | - | - | - | - | TS 16949 | R-PDSO-N8 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | DRAIN | - | - | N and P-Channel | SWITCHING | 7 Ω @ 1A, 10V, 8 Ω @ 1A, 10V | 2V @ 1mA, 2.4V @ 1mA | 110pF @ 25V 200pF @ 25V | - | - | 200V | N-CHANNEL AND P-CHANNEL | - | - | - | - | - | - | 7Ohm | - | - | 200V | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| TC6321T-V/9U | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTC8020K6-G-M937Anlielectronics Тип | Microchip Technology |
Trans MOSFET N/P-CH 200V 56-Pin QFN EP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | - | - | Surface Mount | Surface Mount | 56-VFQFN Exposed Pad | - | - | - | 191.387631mg | SILICON | - | - | - | - | - | - | - | - | - | - | - | 6 | - | - | - | - | - | - | 20 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | - | yes | Active | 3 (168 Hours) | 56 | - | - | - | - | - | - | - | - | - | - | - | - | QUAD | NO LEAD | - | - | - | - | - | - | - | COMPLEX | 12 | - | - | - | ENHANCEMENT MODE | - | - | 10 ns | - | 6 N and 6 P-Channel | SWITCHING | 8 Ω @ 1A, 10V | 2.4V @ 1mA | 50pF @ 25V | - | 15ns | 200V | N-CHANNEL AND P-CHANNEL | 15 ns | - | 3.2A | - | - | - | 8Ohm | - | - | 200V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| TC8020K6-G-M937 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMSCSM70HM19T3AGAnlielectronics Тип | Microchip Technology |
PM-MOSFET-SIC-SP3F
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Chassis Mount | Module | - | - | - | - | - | - | Microchip Technology | - | 124A (Tc) | 1 | 124 A | Microchip | + 175 C | Microchip Technology | - 40 C | Screw Mounts | - | Bulk | 365 W | Active | 19 mOhms | Details | N-Channel | - | 50 ns | 40 ns | - | 700 V | - 10 V, 23 V | 1.9 V | - | -40°C ~ 175°C (TJ) | - | - | - | - | - | - | - | - | - | - | Full Bridge SiC MOSFET Power Module | - | - | - | - | - | Discrete Semiconductor Modules | - | - | SiC | - | - | - | - | - | - | - | - | - | Full Bridge | - | - | - | - | - | - | - | - | 365W (Tc) | 4 N-Channel (Full Bridge) | - | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 4500pF @ 700V | 215nC @ 20V | 40 ns | 700V | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | - | - | Silicon Carbide (SiC) | - | - | Power MOSFET Modules | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | ||
| MSCSM70HM19T3AG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMSCSM120AM16T1AGAnlielectronics Тип | Microchip Technology |
PM-MOSFET-SIC-SP1F
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Chassis Mount | Module | - | - | - | - | - | - | Microchip Technology | - | 173A (Tc) | 1 | 173 A | Microchip | + 175 C | Microchip Technology | - 40 C | Screw Mounts | - | Bulk | 745 W | Active | 16 mOhms | Details | N-Channel | - | 50 ns | 30 ns | - | 1200 V | - 10 V, 23 V | 1.8 V | - | -40°C ~ 175°C (TJ) | - | - | - | - | - | - | - | - | - | - | Phase Leg SiC MOSFET Power Module | - | - | - | - | - | Discrete Semiconductor Modules | - | - | SiC | - | - | - | - | - | - | - | - | - | Dual | - | - | - | - | - | - | - | - | 745W (Tc) | 2 N Channel (Phase Leg) | - | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 6040pF @ 1000V | 464nC @ 20V | 30 ns | 1200V (1.2kV) | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | - | - | Silicon Carbide (SiC) | - | - | Power MOSFET Modules | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | ||
| MSCSM120AM16T1AG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMSCSM120AM31TBL1NGAnlielectronics Тип | Microchip Technology |
PM-MOSFET-SIC-BL1
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Chassis Mount | Module | - | - | - | - | - | - | Microchip Technology | - | 79A | 1 | 79 A | Microchip | + 175 C | Microchip Technology | - 40 C | Screw Mounts | - | Bulk | 310 W | Active | 31 mOhms | Details | N-Channel | - | 50 ns | 30 ns | - | 1200 V | - 10 V, 23 V | 1.8 V | - | -55°C ~ 175°C (TJ) | - | - | - | - | - | - | - | - | - | - | Phase Leg SiC MOSFET Power Module | - | - | - | - | - | Discrete Semiconductor Modules | - | - | SiC | - | - | - | - | - | - | - | - | - | Dual | - | - | - | - | - | - | - | - | 310W | 2 N Channel (Phase Leg) | - | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 3020pF @ 1000V | 232nC @ 20V | 30 ns | 1200V (1.2kV) | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | - | - | Silicon Carbide (SiC) | - | - | Power MOSFET Modules | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | ||
| MSCSM120AM31TBL1NG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPTC60DSKM24T3GAnlielectronics Тип | Microchip |
POWER MODULE - COOLMOS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Production (Last Updated: 2 months ago) | - | Chassis Mount, Screw | Chassis Mount | SP3 | - | 3 | SP3 | - | - | APTC60 | Microchip Technology | - | 95A | 1 | - | Microchip | - | Microchip Technology | - | - | 2 | Tray | - | Active | - | Details | - | - | - | - | - | - | - | - | 100 V | -40°C ~ 150°C (TJ) | Tube | - | CoolMOS™ | - | - | - | - | - | - | 10.0000 ppm/°C | - | 100 kOhm | - | 150 °C | -40 °C | - | Discrete Semiconductor Modules | 0.1 W | 462 W | MOSFET (Metal Oxide) | - | - | - | High Precision/High Stability | - | - | - | - | - | 2 N Channel (Dual Buck Chopper) | - | - | - | - | - | - | - | - | 462W | - | - | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 14400pF @ 25V | 300nC @ 10V | - | 600V | - | - | Discrete Semiconductor Modules | 95 A | - | 20 V | - | - | - | 14.4 nF | - | - | - | 0.1 | Super Junction | 24 mΩ | 24 mΩ | - | Discrete Semiconductor Modules | 2 mm | 1.25 mm | - | - | - | - | - | - | Lead Free | ||
| APTC60DSKM24T3G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPTM50H15FT1GAnlielectronics Тип | Microchip |
Trans MOSFET Array Dual N-CH 500V 25A 12-Pin Case SP1
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Chassis Mount | SP1 | - | - | SP1 | - | - | APTM50 | Microchip Technology / Atmel | 25 | 25A | 1 | 25 A | Microchip | + 100 C | Microchip Technology | - 40 C | Screw Mounts | - | Bulk | 208 W | Active | 130 mOhms | Details | N-Channel | - | 80 ns | 29 ns | 2.821917 oz | - | - 30 V, + 30 V | 3 V | - | -40°C ~ 150°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | Full Bridge | - | - | - | - | - | Discrete Semiconductor Modules | - | - | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | 4 N-Channel (Half Bridge) | - | - | - | - | - | - | - | - | 208W | - | - | 180mOhm @ 21A, 10V | 5V @ 1mA | 5448pF @ 25V | 170nC @ 10V | 35 ns | 500V | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | Dual N | - | - | - | - | - | Power MOSFET Modules | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | ||
| APTM50H15FT1G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPTM120DU15GAnlielectronics Тип | Microchip |
Trans MOSFET Array Dual N-CH 1.2KV 60A 7-Pin Case SP6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Chassis Mount | SP6 | - | - | SP6 | - | - | APTM120 | Microchip Technology | 60 | 60A | 1 | - | Microchip | - | Microchip Technology | - | - | - | Bulk | - | Active | - | Details | - | - | - | - | - | - | - | - | - | -40°C ~ 150°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Discrete Semiconductor Modules | - | - | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | 2 N-Channel (Dual) | - | - | - | - | - | - | - | - | 1250W | - | - | 175mOhm @ 30A, 10V | 5V @ 10mA | 20600pF @ 25V | 748nC @ 10V | - | 1200V (1.2kV) | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | Dual N | - | - | - | - | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | ||
| APTM120DU15G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPTC60VDAM45T1GAnlielectronics Тип | Microchip |
Trans MOSFET Array Dual N-CH 600V 49A 12-Pin Case SP-1
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Production (Last Updated: 2 months ago) | - | Chassis Mount, Screw | Chassis Mount | SP1 | - | 1 | SP1 | - | - | APTC60 | Microchip Technology | 49 | 49A | 1 | - | Microchip | - | Microchip Technology | - | - | 2 | Tray | - | Active | - | Details | - | 100 ns | - | - | - | - | - | - | - | -40°C ~ 150°C (TJ) | Tube | - | CoolMOS™ | - | - | - | - | - | - | - | - | - | - | 150 °C | -40 °C | - | Discrete Semiconductor Modules | - | 250 W | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | 2 N-Channel (Dual) | - | - | - | - | - | 250 | - | 21 ns | 250W | - | - | 45mOhm @ 24.5A, 10V | 3.9V @ 3mA | 7200pF @ 25V | 150nC @ 10V | 30 ns | 600V | - | - | Discrete Semiconductor Modules | 49 A | - | 20 V | - | - | - | 7.2 nF | - | Dual N | - | - | Super Junction | - | 45 mΩ | - | Discrete Semiconductor Modules | - | - | - | - | - | No | - | - | - | ||
| APTC60VDAM45T1G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMSCSM120HM16T3AGAnlielectronics Тип | Microchip Technology |
PM-MOSFET-SIC-SP3F
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Chassis Mount | Module | - | - | - | - | - | - | Microchip Technology | - | 173A (Tc) | 1 | 173 A | Microchip | + 175 C | Microchip Technology | - 40 C | Screw Mounts | - | Bulk | 745 W | Active | 16 mOhms | Details | N-Channel | - | 50 ns | 30 ns | - | 1200 V | - 10 V, 23 V | 1.8 V | - | -40°C ~ 175°C (TJ) | - | - | - | - | - | - | - | - | - | - | Full Bridge SiC MOSFET Power Module | - | - | - | - | - | Discrete Semiconductor Modules | - | - | SiC | - | - | - | - | - | - | - | - | - | Full Bridge | - | - | - | - | - | - | - | - | 745W (Tc) | 4 N-Channel (Full Bridge) | - | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 6040pF @ 1000V | 464nC @ 20V | 30 ns | 1200V (1.2kV) | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | - | - | Silicon Carbide (SiC) | - | - | Power MOSFET Modules | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | ||
| MSCSM120HM16T3AG |
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