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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Terminal Pitch Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Qualification Status Input Voltage-Nom Configuration Number of Channels Analog IC - Other Type Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Input Voltage (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Control Technique Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Supply Current-Max (Isup) Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Switcher Configuration Continuous Drain Current (ID) Threshold Voltage Gate to Source Voltage (Vgs) Max Dual Supply Voltage Switching Frequency-Max Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage Input Capacitance DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology FET Feature Drain to Source Resistance Rds On Max Nominal Vgs Height Length Width Thickness Radiation Hardening REACH SVHC RoHS Status Lead Free
Texas Instruments CSD87335Q3D
Mfr. Тип
CSD87335Q3D
Anlielectronics Тип

Texas Instruments
MOSFET N-CH 30V POWERBLOCK
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 6 Weeks ACTIVE (Last Updated: 6 days ago) - Surface Mount Surface Mount 8-PowerLDFN - 8 - - - - - - -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - - - - 6W - NO LEAD - 1 0.65mm not_compliant - - CSD87335 - - - - 12V - - SWITCHING CONTROLLER - - - - - - 2 N-Channel (Dual) Asymmetrical - 27V - 1.9V @ 250μA PULSE WIDTH MODULATION 1050pF @ 15V 7.4nC @ 4.5V - 20mA 30V - - BUCK - - - - 1500kHz - - - - - - - - - Standard - - - - 3.3mm 3.3mm 1.5mm - - ROHS3 Compliant Contains Lead
    CSD87335Q3D
    CSD87335Q3D

    Texas Instruments
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Microchip Technology TC8220K6-G
    Mfr. Тип
    TC8220K6-G
    Anlielectronics Тип

    		Microchip Technology
    Two Pair N- And P-channel Enhancement-mode Mosfet
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 3 Weeks - - Surface Mount Surface Mount 12-VFDFN Exposed Pad - 12 - - SILICON - 4 - -55°C~150°C TJ Tape & Reel (TR) 2013 - e4 - Active 2 (1 Year) 12 - EAR99 - Nickel/Palladium/Gold (Ni/Pd/Au) - - LOGIC LEVEL COMPATIBLE, LOW THRESHOLD - - - DUAL NO LEAD 260 - - - - 40 - - - - Not Qualified - SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR - - - ENHANCEMENT MODE - - - - 2 N and 2 P-Channel SWITCHING - 6 Ω @ 1A, 10V 2.4V @ 1mA - 56pF @ 25V - - - 200V N-CHANNEL AND P-CHANNEL - - - - - - - - 7Ohm - - - - 200V - METAL-OXIDE SEMICONDUCTOR Standard - - - - - - - - - ROHS3 Compliant -
      TC8220K6-G
      TC8220K6-G

      Microchip Technology
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      ON Semiconductor FDMS3626S
      Mfr. Тип
      FDMS3626S
      Anlielectronics Тип

      		ON Semiconductor
      MOSFET 25V Dual N-Channel MOSFET
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 18 Weeks ACTIVE (Last Updated: 3 days ago) - Surface Mount Surface Mount 8-PowerTDFN - 8 - 90mg SILICON 17.5A 25A 2 23 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e3 yes Active 1 (Unlimited) 6 - EAR99 - Tin (Sn) - - - - - 1W - - - - - - - - - - - R-PDSO-N6 - - - - - Dual ENHANCEMENT MODE 2.5W DRAIN SOURCE 7 ns - 2 N-Channel (Dual) Asymmetrical SWITCHING - 5m Ω @ 17.5A, 10V 2V @ 250μA - 1570pF @ 13V 26nC @ 10V - - - - - - 25A - 12V - - 17.5A 0.005Ohm 25V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - 1.05mm 5.1mm 6.1mm - No - ROHS3 Compliant Lead Free
        FDMS3626S
        FDMS3626S

        ON Semiconductor
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Nexperia USA Inc. BSS84AKS,115
        Mfr. Тип
        BSS84AKS,115
        Anlielectronics Тип

        		Nexperia USA Inc.
        Dual P-Channel 50 V 7.5 Ohm 0.26 nC Surface Mount Trench Mosfet - SOT-363
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 4 Weeks - - - Surface Mount 6-TSSOP, SC-88, SOT-363 YES 6 - - SILICON 160mA 2 - -55°C~150°C TJ Tape & Reel (TR) 2007 Automotive, AEC-Q101, TrenchMOS™ e3 - Active 1 (Unlimited) 6 - - - Tin (Sn) - - LOGIC LEVEL COMPATIBLE - - - - GULL WING 260 - - - - 30 - 6 - - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - - 445mW 2 P-Channel (Dual) SWITCHING - 7.5 Ω @ 100mA, 10V 2.1V @ 250μA - 36pF @ 25V 0.35nC @ 5V - - 50V - - - - - - - - - 8.5Ohm - - - - 50V - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - - ROHS3 Compliant -
          BSS84AKS,115
          BSS84AKS,115

          Nexperia USA Inc.
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Diodes Incorporated DMN6040SSDQ-13
          Mfr. Тип
          DMN6040SSDQ-13
          Anlielectronics Тип

          		Diodes Incorporated
          MOSFET N-CH 60V 5.0A SO-8
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 18 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON 5A Ta 2 - -55°C~150°C TJ Tape & Reel (TR) 2016 - e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - - 1.3W - GULL WING NOT SPECIFIED - - - - NOT SPECIFIED - - AEC-Q101 - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - - - 2 N-Channel (Dual) SWITCHING - 40m Ω @ 4.5A, 10V 3V @ 250μA - 1287pF @ 25V 22.4nC @ 10V - - 60V - - - 5A - - - - 5A 0.04Ohm - - - - 60V - METAL-OXIDE SEMICONDUCTOR Standard - - - - - - - - - ROHS3 Compliant -
            DMN6040SSDQ-13
            DMN6040SSDQ-13

            Diodes Incorporated
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            STMicroelectronics STL8DN10LF3
            Mfr. Тип
            STL8DN10LF3
            Anlielectronics Тип

            		STMicroelectronics
            MOSFET 2N-CH 100V 20A 5X6
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 12 Weeks ACTIVE (Last Updated: 7 months ago) - Surface Mount Surface Mount 8-PowerVDFN - 8 - - SILICON - 2 50.6 ns -55°C~175°C TJ Cut Tape (CT) - Automotive, AEC-Q101, STripFET™ III - - Active 1 (Unlimited) 6 - EAR99 - - - - AVALANCHE RATED - - 70W - FLAT - - - - - - STL8 - - R-PDSO-F6 - - - - - Dual ENHANCEMENT MODE 70W DRAIN 8.7 ns - 2 N-Channel (Dual) SWITCHING - 35m Ω @ 4A, 10V 3V @ 250μA - 970pF @ 25V 20.5nC @ 10V 9.6ns - 100V - 5.2 ns - 20A - 20V - - - 0.05Ohm 100V 31.2A - - - 190 mJ METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - No - ROHS3 Compliant Lead Free
              STL8DN10LF3
              STL8DN10LF3

              STMicroelectronics
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Alpha & Omega Semiconductor Inc. AO4892
              Mfr. Тип
              AO4892
              Anlielectronics Тип

              		Alpha & Omega Semiconductor Inc.
              MOSFET 2N-CH 100V 4A 8SOIC
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 18 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - - - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2007 - - - Active 1 (Unlimited) - - - - - - - - - - 2W - - - - - - - - - - - - - - - - - - - - - - 2W 2 N-Channel (Dual) - - 68m Ω @ 4A, 10V 2.8V @ 250μA - 415pF @ 50V 12nC @ 10V - - 100V - - - 4A - - - - - - - - - - - - - Standard - - - - - - - - - ROHS3 Compliant -
                AO4892
                AO4892

                Alpha & Omega Semiconductor Inc.
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                ON Semiconductor FDMA1028NZ
                Mfr. Тип
                FDMA1028NZ
                Anlielectronics Тип

                		ON Semiconductor
                Trans MOSFET N-CH 20V 3.7A 6-Pin MicroFET T/R
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 16 Weeks ACTIVE (Last Updated: 3 days ago) - Surface Mount Surface Mount 6-VDFN Exposed Pad - 6 - 40mg SILICON - 2 14 ns -55°C~150°C TJ Tape & Reel (TR) 2009 PowerTrench® e4 yes Active 1 (Unlimited) 6 SMD/SMT EAR99 68MOhm Nickel/Palladium/Gold (Ni/Pd/Au) - - - - 20V 1.4W - - - - - - 3.7A - - - - - - - - - - Dual ENHANCEMENT MODE 1.4W DRAIN 8 ns 700mW 2 N-Channel (Dual) SWITCHING - 68m Ω @ 3.7A, 4.5V 1.5V @ 250μA - 340pF @ 10V 6nC @ 4.5V 8ns - - - 8 ns - 3.7A 1V 12V - - - - 20V - 20V - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - 1 V 750μm 2mm 2mm - No No SVHC ROHS3 Compliant Lead Free
                  FDMA1028NZ
                  FDMA1028NZ

                  ON Semiconductor
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor FDS6892A
                  Mfr. Тип
                  FDS6892A
                  Anlielectronics Тип

                  		ON Semiconductor
                  Trans MOSFET N-CH 20V 7.5A 8-Pin SOIC N T/R
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 10 Weeks ACTIVE (Last Updated: 2 days ago) Tin Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 187mg SILICON - 2 26 ns -55°C~150°C TJ Tape & Reel (TR) 2017 PowerTrench® e3 yes Active 1 (Unlimited) 8 SMD/SMT EAR99 18MOhm - - - - - 20V 2W - GULL WING - - - - 7.5A - - - - - - - - - - Dual ENHANCEMENT MODE 2W - 8 ns 900mW 2 N-Channel (Dual) SWITCHING - 18m Ω @ 7.5A, 4.5V 1.5V @ 250μA - 1333pF @ 10V 17nC @ 4.5V 15ns - - - 9 ns - 7.5A 900mV 12V - - - - 20V 30A 20V - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - 900 mV 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                    FDS6892A
                    FDS6892A

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    ROHM Semiconductor QS6K1TR
                    Mfr. Тип
                    QS6K1TR
                    Anlielectronics Тип

                    		ROHM Semiconductor
                    MOSFET 2N-CH 30V 1A TSMT6
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 20 Weeks - - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 - - SILICON - 2 15 ns 150°C TJ Tape & Reel (TR) 2006 - e1 yes Active 1 (Unlimited) 6 SMD/SMT EAR99 364MOhm - - - - - 30V 900mW - GULL WING 260 - - - 1A 10 *K1 6 - - - - - - - Dual ENHANCEMENT MODE 1.25W - 7 ns - 2 N-Channel (Dual) SWITCHING - 238m Ω @ 1A, 4.5V 1.5V @ 1mA - 77pF @ 10V 2.4nC @ 4.5V 7ns - - - 7 ns - 1A 1.5V 12V - - 1A - 30V - 30V - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - 1.5 V - - - - No No SVHC ROHS3 Compliant Lead Free
                      QS6K1TR
                      QS6K1TR

                      ROHM Semiconductor
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Infineon Technologies IRF9395MTRPBF
                      Mfr. Тип
                      IRF9395MTRPBF
                      Anlielectronics Тип

                      		Infineon Technologies
                      MOSFET 2P-CH 30V 14A DIRECTFET
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 17 Weeks - - Surface Mount Surface Mount DirectFET™ Isometric MC - 10 - - SILICON - 1 76 ns -40°C~150°C TJ Tape & Reel (TR) 2007 HEXFET® e3 - Last Time Buy 1 (Unlimited) 6 - EAR99 - Matte Tin (Sn) - - - - - 2.1W BOTTOM - - - - - - - - - - R-XBCC-N6 - - - - - Dual ENHANCEMENT MODE 2.1W DRAIN 19 ns - 2 P-Channel (Dual) SWITCHING - 7m Ω @ 14A, 10V 2.4V @ 50μA - 3241pF @ 15V 64nC @ 10V 142ns - 30V - 121 ns - 14A - 20V - - 75A 0.007Ohm -30V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - No - ROHS3 Compliant -
                        IRF9395MTRPBF
                        IRF9395MTRPBF

                        Infineon Technologies
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Texas Instruments CSD85301Q2
                        Mfr. Тип
                        CSD85301Q2
                        Anlielectronics Тип

                        		Texas Instruments
                        MOSFET 2N-CH 20V 5A 6WSON
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 6 Weeks ACTIVE (Last Updated: 2 days ago) Tin Surface Mount Surface Mount 6-WDFN Exposed Pad - 6 - 9.695537mg SILICON - 2 14 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e3 yes Active 1 (Unlimited) 6 - EAR99 - - - - AVALANCHE RATED - - 2.3W - NO LEAD - - - - - - CSD85301 - - - - - - 2 - Dual ENHANCEMENT MODE - DRAIN 6 ns - 2 N-Channel (Dual) SWITCHING - 27m Ω @ 5A, 4.5V 1.2V @ 250μA - 469pF @ 10V 5.4nC @ 4.5V 26ns - 20V - 15 ns - 5A - 10V - - 5A 0.039Ohm - - - - - 3.8 mJ METAL-OXIDE SEMICONDUCTOR Logic Level Gate, 5V Drive - - - 800μm 2mm 2mm 750μm - - ROHS3 Compliant Lead Free
                          CSD85301Q2
                          CSD85301Q2

                          Texas Instruments
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Diodes Incorporated DMC4040SSD-13
                          Mfr. Тип
                          DMC4040SSD-13
                          Anlielectronics Тип

                          		Diodes Incorporated
                          Transistor: N/P-MOSFET; unipolar; 40/-40V; 7.3/-7.5A; 1.8W; SO8
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON 6.8A 2 53.7 ns -55°C~150°C TJ Tape & Reel (TR) 2011 - e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - annealed - - HIGH RELIABILITY - - 1.8W DUAL GULL WING 260 - - - - 40 DMC4040 8 AEC-Q101 - - - - - - - ENHANCEMENT MODE 2.14W - 6.9 ns - N and P-Channel SWITCHING - 25m Ω @ 3A, 10V 1.8V @ 250μA - 1790pF @ 20V 37.6nC @ 10V 14.7ns - 40V N-CHANNEL AND P-CHANNEL 30.9 ns - 7.5A - 20V - - 5.7A 0.04Ohm -40V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - 1.5mm 4.95mm 3.95mm - No No SVHC ROHS3 Compliant Lead Free
                            DMC4040SSD-13
                            DMC4040SSD-13

                            Diodes Incorporated
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor MMDF2C03HDR2G
                            Mfr. Тип
                            MMDF2C03HDR2G
                            Anlielectronics Тип

                            		ON Semiconductor
                            MOSFET N/P-CH 30V 4.1A/3A 8SOIC
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - OBSOLETE (Last Updated: 1 week ago) - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON 4.1A 3A 2 81 ns -55°C~150°C TJ Tape & Reel (TR) 2006 - e3 yes Obsolete 1 (Unlimited) 8 - EAR99 - Tin (Sn) - - - - 30V 2W DUAL GULL WING 260 - - unknown 2A 40 MMDF2C03HD 8 - - Not Qualified - - - - - ENHANCEMENT MODE 2W - - - N and P-Channel SWITCHING - 70m Ω @ 3A, 10V 3V @ 250μA - 630pF @ 24V 16nC @ 10V 18ns - - N-CHANNEL AND P-CHANNEL 194 ns - 4.1A 1.7V 20V - - - 0.07Ohm 30V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - No SVHC RoHS Compliant Lead Free
                              MMDF2C03HDR2G
                              MMDF2C03HDR2G

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Nexperia USA Inc. 2N7002PS,115
                              Mfr. Тип
                              2N7002PS,115
                              Anlielectronics Тип

                              		Nexperia USA Inc.
                              MOSFET 2N-CH 60V 0.32A 6TSSOP
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 4 Weeks - Tin - Surface Mount 6-TSSOP, SC-88, SOT-363 YES 6 - - SILICON - 2 10 ns 150°C TJ Cut Tape (CT) 2010 - e3 - Active 1 (Unlimited) 6 - - 1.6Ohm - - - LOGIC LEVEL COMPATIBLE - - 420mW - GULL WING - - - - - - - 6 - - - - - - - Dual ENHANCEMENT MODE 320mW - 3 ns 420mW 2 N-Channel (Dual) SWITCHING - 1.6 Ω @ 500mA, 10V 2.4V @ 250μA - 50pF @ 10V 0.8nC @ 4.5V 4ns - - - 4 ns - 320mA - 20V 60V - - - 60V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - No - ROHS3 Compliant Lead Free
                                2N7002PS,115
                                2N7002PS,115

                                Nexperia USA Inc.
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ROHM Semiconductor QS6M4TR
                                Mfr. Тип
                                QS6M4TR
                                Anlielectronics Тип

                                		ROHM Semiconductor
                                MOSFET N/P-CH 30V/20V 1.5A TSMT6
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 20 Weeks - - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 - - SILICON - 2 45 ns 150°C TJ Tape & Reel (TR) 2006 - e1 yes Active 1 (Unlimited) 6 - EAR99 - - - - - 8541.29.00.95 - 1.25W - GULL WING 260 - - - 1.5A 10 *M4 6 - - - - - - - Dual ENHANCEMENT MODE 1.25W - - - N and P-Channel SWITCHING - 230m Ω @ 1.5A, 4.5V 1.5V @ 1mA - 80pF @ 10V 1.6nC @ 4.5V 12ns - 30V 20V N-CHANNEL AND P-CHANNEL 12 ns - 1.5A 1.5V 12V - - - 0.245Ohm -20V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - No - ROHS3 Compliant Lead Free
                                  QS6M4TR
                                  QS6M4TR

                                  ROHM Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ROHM Semiconductor QH8MA4TCR
                                  Mfr. Тип
                                  QH8MA4TCR
                                  Anlielectronics Тип

                                  		ROHM Semiconductor
                                  MOSFET N/P-CH 30V TSMT8
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 20 Weeks - - Surface Mount Surface Mount 8-SMD, Flat Lead - 2 - - SILICON 9A 8A 2 - 150°C TJ Cut Tape (CT) 2015 - - - Active 1 (Unlimited) 8 - EAR99 - - - - - - - 1.5W DUAL - NOT SPECIFIED - - - - NOT SPECIFIED - - - R-PDSO-F8 - - - - - - ENHANCEMENT MODE - - - - N and P-Channel SWITCHING - 16m Ω @ 9A, 10V 2.5V @ 1mA - 640pF @ 15V 15.5nC @ 10V - - 30V N-CHANNEL AND P-CHANNEL - - 8A - - - - - 0.016Ohm - - - - 30V 3.5 mJ METAL-OXIDE SEMICONDUCTOR Standard - - - - - - - - - ROHS3 Compliant -
                                    QH8MA4TCR
                                    QH8MA4TCR

                                    ROHM Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Diodes Incorporated DMN4031SSDQ-13
                                    Mfr. Тип
                                    DMN4031SSDQ-13
                                    Anlielectronics Тип

                                    		Diodes Incorporated
                                    MOSFET 2N-CH 40V 5.2A 8SOIC
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 7 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - - - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2015 - e3 - Active 1 (Unlimited) - - EAR99 - Matte Tin (Sn) - - - - - 1.42W - - NOT SPECIFIED - - - - NOT SPECIFIED - - - - - - - - - - - - - - 1.42W 2 N-Channel (Dual) - - 31m Ω @ 6A, 10V 3V @ 250μA - 945pF @ 20V 18.6nC @ 10V - - 40V - - - 5.2A - - - - - - - - - - - - - Standard - - - - - - - - - ROHS3 Compliant -
                                      DMN4031SSDQ-13
                                      DMN4031SSDQ-13

                                      Diodes Incorporated
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Infineon Technologies IRF5810TRPBF
                                      Mfr. Тип
                                      IRF5810TRPBF
                                      Anlielectronics Тип

                                      		Infineon Technologies
                                      MOSFET 2P-CH 20V 2.9A 6-TSOP
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - - - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 6-TSOP - - 2.9A 2 62 ns -55°C~150°C TJ Tape & Reel (TR) 2003 HEXFET® - - Obsolete 2 (1 Year) - SMD/SMT - 90MOhm - 150°C -55°C - - - 960mW - - - - - - - - IRF5810PBF - - - - - - - - Dual - 960mW - 8.2 ns 960mW 2 P-Channel (Dual) - - 90mOhm @ 2.9A, 4.5V 1.2V @ 250μA - 650pF @ 16V 9.6nC @ 4.5V 14ns - 20V - 53 ns - -2.9A -1.2V 12V - - - - -20V - -20V 650pF - - - Logic Level Gate 90mOhm 90 mΩ -1.2 V 990.6μm 3mm 1.4986mm - No No SVHC RoHS Compliant Lead Free
                                        IRF5810TRPBF
                                        IRF5810TRPBF

                                        Infineon Technologies
                                        RoHS :
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                                        STMicroelectronics STS4DPF20L
                                        Mfr. Тип
                                        STS4DPF20L
                                        Anlielectronics Тип

                                        		STMicroelectronics
                                        MOSFET P-Ch 20 Volt 4 Amp
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON - 2 125 ns -55°C~150°C TJ Tape & Reel (TR) - STripFET™ e4 - Obsolete 1 (Unlimited) 8 - EAR99 80mOhm Nickel/Palladium/Gold (Ni/Pd/Au) - - LOW THRESHOLD - -20V 2W - GULL WING 260 - - - -4A 30 STS4D 8 - - - - - - - - ENHANCEMENT MODE 2W - 25 ns 1.6W 2 P-Channel (Dual) SWITCHING - 80m Ω @ 2A, 10V 2.5V @ 250μA - 1350pF @ 25V 16nC @ 5V 35ns - - - 35 ns - 4A 1.6V 16V - - 4A - 20V 16A - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - 1.25mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                                          STS4DPF20L
                                          STS4DPF20L

                                          STMicroelectronics
                                          RoHS :
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                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: CSD87335Q3D,TC8220K6-G,FDMS3626S,BSS84AKS,115,DMN6040SSDQ-13.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Arrays has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.