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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Qualification Status Configuration Row Spacing Number of Channels Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Continuous Drain Current (ID) Threshold Voltage JEDEC-95 Code Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage Input Capacitance DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology FET Feature Rds On Max Nominal Vgs Feedback Cap-Max (Crss) Height Length Width Thickness Radiation Hardening REACH SVHC RoHS Status Lead Free
Diodes Incorporated DMC3018LSD-13
Mfr. Тип
DMC3018LSD-13
Anlielectronics Тип

Diodes Incorporated
MOSFET N/P-CH 30V 9.1A/6A 8-SOIC
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 21 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 850.995985mg SILICON 9.1A 6A 2 - -55°C~150°C TJ Tape & Reel (TR) 2011 - e3 yes Obsolete 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - - 2.5W DUAL GULL WING 260 - - 40 - 8 - - - - - - - ENHANCEMENT MODE 2.5W - - - N and P-Channel SWITCHING 20m Ω @ 6.9A, 10V 2.1V @ 250μA 631pF @ 15V 12.4nC @ 10V - 30V N-CHANNEL AND P-CHANNEL - 6A - - 20V 9.1A - - - - - 30V - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - 1.5mm 5.3mm 4.1mm - No No SVHC ROHS3 Compliant -
    DMC3018LSD-13
    DMC3018LSD-13

    Diodes Incorporated
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Infineon Technologies BSZ0909NDXTMA1
    Mfr. Тип
    BSZ0909NDXTMA1
    Anlielectronics Тип

    		Infineon Technologies
    MOSFET 2 N-CH 30V 20A WISON-8
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 4 Weeks - - - Surface Mount 8-PowerVDFN YES - - - SILICON 20A Tc 2 - -55°C~150°C TJ Tape & Reel (TR) 2013 OptiMOS™ e3 yes Active 1 (Unlimited) 8 - EAR99 - Tin (Sn) - - AVALANCHE RATED - - - - NO LEAD NOT SPECIFIED - - NOT SPECIFIED - - - S-PDSO-N8 - SERIES, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - - 17W 2 N-Channel (Dual) - 18m Ω @ 9A, 10V 2V @ 250μA 360pF @ 15V 2.6nC @ 4.5V - 30V - - - - - - 4.1A 0.025Ohm - 40A - - 30V 4 mJ METAL-OXIDE SEMICONDUCTOR Logic Level Gate, 4.5V Drive - - - - - - - - - ROHS3 Compliant -
      BSZ0909NDXTMA1
      BSZ0909NDXTMA1

      Infineon Technologies
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Diodes Incorporated DMN63D8LDW-13
      Mfr. Тип
      DMN63D8LDW-13
      Anlielectronics Тип

      		Diodes Incorporated
      MOSFET 2N-CH 30V 0.22A SOT363
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 15 Weeks - - Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - 6 - - SILICON - 2 12 ns -55°C~150°C TJ Tape & Reel (TR) 2012 - e3 yes Active 1 (Unlimited) 6 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - - 300mW - GULL WING 260 - - 40 - - AEC-Q101 - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - 3.3 ns - 2 N-Channel (Dual) SWITCHING 2.8 Ω @ 250mA, 10V 1.5V @ 250μA 22pF @ 25V 870nC @ 10V 3.2ns 30V - 6.3 ns 220mA - - 20V 0.22A 4.5Ohm - - - - 30V - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - No No SVHC ROHS3 Compliant Lead Free
        DMN63D8LDW-13
        DMN63D8LDW-13

        Diodes Incorporated
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Texas Instruments CSD85312Q3E
        Mfr. Тип
        CSD85312Q3E
        Anlielectronics Тип

        		Texas Instruments
        Trans MOSFET N-CH 20V 39A 8-Pin VSON EP T/R
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 8 Weeks ACTIVE (Last Updated: 5 days ago) Gold Surface Mount Surface Mount 8-PowerVDFN - 8 - - SILICON - 2 24 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e4 yes Active 1 (Unlimited) 4 - EAR99 - - - - AVALANCHE RATED - - 2.5W - NO LEAD 260 - - NOT SPECIFIED CSD85312 - - - - COMPLEX - - - ENHANCEMENT MODE 2.5W - 11 ns - 2 N-Channel (Dual) Common Source SWITCHING 12.4m Ω @ 10A, 8V 1.4V @ 250μA 2390pF @ 10V 15.2nC @ 4.5V 27ns 20V - 6 ns 39A - - 10V - - 20V 76A - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate, 5V Drive - - 40 pF - 3.3mm 3.3mm 900μm - - ROHS3 Compliant Contains Lead
          CSD85312Q3E
          CSD85312Q3E

          Texas Instruments
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Diodes Incorporated DMG1026UV-7
          Mfr. Тип
          DMG1026UV-7
          Anlielectronics Тип

          		Diodes Incorporated
          MOSFET MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 16 Weeks - - Surface Mount Surface Mount SOT-563, SOT-666 - 6 - - SILICON - 2 26.4 ns -55°C~150°C TJ Tape & Reel (TR) 2012 - e3 yes Active 1 (Unlimited) 6 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - - 580mW - FLAT 260 - - 40 DMG1026 6 - - - - - - Dual ENHANCEMENT MODE 6.5W - 3.4 ns - 2 N-Channel (Dual) SWITCHING 1.8 Ω @ 500mA, 10V 1.8V @ 250μA 32pF @ 25V 0.45nC @ 10V 3.4ns 60V - 16.3 ns 410mA - - 20V 0.38A - - - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - 600μm 1.7mm 1.25mm - No No SVHC ROHS3 Compliant Lead Free
            DMG1026UV-7
            DMG1026UV-7

            Diodes Incorporated
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor FDMS8090
            Mfr. Тип
            FDMS8090
            Anlielectronics Тип

            		ON Semiconductor
            100V Symmetrical Dual N-Channel PowerTrench® MOSFET 40A, 13mO
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 4 Weeks ACTIVE (Last Updated: 6 days ago) - Surface Mount Surface Mount 8-PowerWDFN - 8 - 250mg SILICON - 2 17.4 ns -55°C~150°C TJ Tape & Reel (TR) 2017 PowerTrench® e4 yes Active 1 (Unlimited) 4 - EAR99 - Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) - - - - - 2.2W - - - - - - - - - R-PDSO-N4 - - - - Dual ENHANCEMENT MODE 59W DRAIN 10.6 ns - 2 N-Channel (Dual) SWITCHING 13m Ω @ 10A, 10V 4V @ 250μA 1800pF @ 50V 27nC @ 10V 4.6ns 100V - 4 ns 10A - - 20V 40A 0.013Ohm 100V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - 750μm 5mm 6mm - No - ROHS3 Compliant Lead Free
              FDMS8090
              FDMS8090

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              ON Semiconductor EFC4C002NLTDG
              Mfr. Тип
              EFC4C002NLTDG
              Anlielectronics Тип

              		ON Semiconductor
              MOSFET 2 N-CHANNEL 8WLCSP
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 12 Weeks ACTIVE (Last Updated: 23 hours ago) - - Surface Mount 8-XFBGA, WLCSP - - - - - - - - 150°C TJ Tape & Reel (TR) - - - yes Active 1 (Unlimited) - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2.6W 2 N-Channel (Dual) Common Drain - - 2.2V @ 1mA 6200pF @ 15V 45nC @ 4.5V - - - - - - - - - - - - - - - - - Logic Level Gate - - - - - - - - - ROHS3 Compliant Lead Free
                EFC4C002NLTDG
                EFC4C002NLTDG

                ON Semiconductor
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Diodes Incorporated ZXMC4559DN8TA
                Mfr. Тип
                ZXMC4559DN8TA
                Anlielectronics Тип

                		Diodes Incorporated
                ZXMC4559DN8 Series 60 V 0.55 Ohm Dual N/P-Channel Enhancement Mode MOSFET SOIC-8
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON 3.6A 2.6A 2 35 ns -55°C~150°C TJ Cut Tape (CT) 2012 - e3 yes Active 1 (Unlimited) 8 SMD/SMT EAR99 105mOhm Matte Tin (Sn) - - - - - 2.1W - GULL WING 260 - 4.7A 40 - 8 - - - - - 2 Dual ENHANCEMENT MODE 2.1W - 3.5 ns 1.25W N and P-Channel SWITCHING 55m Ω @ 4.5A, 10V 1V @ 250μA (Min) 1063pF @ 30V 20.4nC @ 10V 4.1ns - N-CHANNEL AND P-CHANNEL 10 ns 4.7A 1V - 20V 3.6A - 60V - 60V - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - 1 V - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                  ZXMC4559DN8TA
                  ZXMC4559DN8TA

                  Diodes Incorporated
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Diodes Incorporated DMG8601UFG-7
                  Mfr. Тип
                  DMG8601UFG-7
                  Anlielectronics Тип

                  		Diodes Incorporated
                  Dual N-Channel 20 V 34 mOhm 8.8 nC 0.92 W Silicon Surface Mount Mosfet - UDFN-8
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 16 Weeks - Gold Surface Mount Surface Mount 8-PowerUDFN - 8 - - SILICON - 2 562 ns -55°C~150°C TJ Cut Tape (CT) 2011 - e4 yes Active 1 (Unlimited) 5 - EAR99 - - - - HIGH RELIABILITY - - 920mW - NO LEAD 260 - - 40 DMG8601UFG 8 - R-PDSO-N5 Not Qualified - - 2 - ENHANCEMENT MODE - - 53 ns - 2 N-Channel (Dual) Common Drain SWITCHING 23m Ω @ 6.5A, 4.5V 1.05V @ 250μA 143pF @ 10V 8.8nC @ 4.5V 78ns 20V - 234 ns 6.1A - - 12V - - - - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - No SVHC ROHS3 Compliant Lead Free
                    DMG8601UFG-7
                    DMG8601UFG-7

                    Diodes Incorporated
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    ON Semiconductor FDMB2308PZ
                    Mfr. Тип
                    FDMB2308PZ
                    Anlielectronics Тип

                    		ON Semiconductor
                    Dual Common Drain P-Channel PowerTrench® MOSFET -20V, -7A, 36mO
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 16 Weeks ACTIVE (Last Updated: 4 days ago) - Surface Mount Surface Mount 6-WDFN Exposed Pad - 6 - 12.0024mg SILICON - 2 74 ns -55°C~150°C TJ Tape & Reel (TR) 2017 PowerTrench® e4 yes Active 1 (Unlimited) 6 - EAR99 - Nickel/Palladium/Gold (Ni/Pd/Au) - - - 8541.29.00.95 - 2.2W - - - - - - - - - - - COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - 14 ns 800mW 2 P-Channel (Dual) Common Drain - 36m Ω @ 5.7A, 4.5V 1.5V @ 250μA 3030pF @ 10V 30nC @ 10V 33ns 20V - 58 ns 7A - MO-229 12V - - -20V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - 510 pF 725μm 3mm 2mm - No - ROHS3 Compliant Lead Free
                      FDMB2308PZ
                      FDMB2308PZ

                      ON Semiconductor
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Alpha & Omega Semiconductor Inc. AO4813
                      Mfr. Тип
                      AO4813
                      Anlielectronics Тип

                      		Alpha & Omega Semiconductor Inc.
                      MOSFET 2P-CH 30V 7.1A 8SOIC
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 18 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON - 2 - -55°C~150°C TJ Tape & Reel (TR) 2011 - - - Active 1 (Unlimited) 8 - EAR99 - - - - ULTRA-LOW RESISTANCE - - 2W - GULL WING - - - - - 8 - - - - - - - ENHANCEMENT MODE 2W - - - 2 P-Channel (Dual) SWITCHING 25m Ω @ 7.1A, 10V 2.5V @ 250μA 1250pF @ 15V 19nC @ 10V - 30V - - 7.1A - - 20V - - - - - - 30V - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - 175 pF - - - - No - ROHS3 Compliant -
                        AO4813
                        AO4813

                        Alpha & Omega Semiconductor Inc.
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Diodes Incorporated ZXMHC3F381N8TC
                        Mfr. Тип
                        ZXMHC3F381N8TC
                        Anlielectronics Тип

                        		Diodes Incorporated
                        MOSFET 2N/2P-CH 30V 8-SOIC
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON 3.98A 3.36A 4 30 ns -55°C~150°C TJ Tape & Reel (TR) 2009 - e3 yes Active 1 (Unlimited) 8 - EAR99 55mOhm Matte Tin (Sn) - - - - - 870mW DUAL GULL WING 260 - - 40 ZXMHC3F381 8 - - - - - - - ENHANCEMENT MODE 1.35W - 1.9 ns - 2 N and 2 P-Channel (H-Bridge) SWITCHING 33m Ω @ 5A, 10V 3V @ 250μA 430pF @ 15V 9nC @ 10V 3ns 30V N-CHANNEL AND P-CHANNEL 21 ns 3.36A 1V - 20V - - -30V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                          ZXMHC3F381N8TC
                          ZXMHC3F381N8TC

                          Diodes Incorporated
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          ON Semiconductor NDS8947
                          Mfr. Тип
                          NDS8947
                          Anlielectronics Тип

                          		ON Semiconductor
                          Trans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 230.4mg SILICON 4A 2 40 ns -55°C~150°C TJ Tape & Reel (TR) - - - - Obsolete 1 (Unlimited) 8 - - 65mOhm - - - - - -30V 900mW - GULL WING - - -4A - - - - - - - 6.3 mm - Dual ENHANCEMENT MODE 2W - 9 ns - 2 P-Channel (Dual) SWITCHING 65m Ω @ 4A, 10V 2.8V @ 250μA 690pF @ 15V 30nC @ 10V 20ns 30V - 19 ns -4A -1.6V - 20V 4A - -30V - -30V - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - -1.6 V - - - 4.05mm - No No SVHC RoHS Compliant Lead Free
                            NDS8947
                            NDS8947

                            ON Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor FQS4900TF
                            Mfr. Тип
                            FQS4900TF
                            Anlielectronics Тип

                            		ON Semiconductor
                            MOSFET N-Ch 60V/ P-Ch 300V Dual QFET
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 13 Weeks ACTIVE (Last Updated: 4 days ago) - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 230.4mg SILICON 1.3A 300mA 2 35 ns -55°C~150°C TJ Tape & Reel (TR) 2002 QFET® e3 yes Active 1 (Unlimited) 8 - EAR99 - Tin (Sn) - - - - - 2W DUAL GULL WING NOT SPECIFIED - - NOT SPECIFIED FQS4900 - - - Not Qualified SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE 2W - - - N and P-Channel SWITCHING 550m Ω @ 650mA, 10V 1.95V @ 20mA - 2.1nC @ 5V 25ns 60V 300V N-CHANNEL AND P-CHANNEL 47 ns 1.3A - - 20V - 0.65Ohm -300V 5.2A - - - - METAL-OXIDE SEMICONDUCTOR Standard - - - - - - - - - ROHS3 Compliant Lead Free
                              FQS4900TF
                              FQS4900TF

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              ON Semiconductor FDC6310P
                              Mfr. Тип
                              FDC6310P
                              Anlielectronics Тип

                              		ON Semiconductor
                              MOSFET Dual P-Ch 2.5V Spec Power Trench
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 10 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 - 36mg SILICON - 2 10 ns -55°C~150°C TJ Tape & Reel (TR) 2001 PowerTrench® e3 yes Active 1 (Unlimited) 6 - EAR99 125MOhm Tin (Sn) - - - - -20V 960mW - GULL WING - - -2.2A - - - - - - - - - Dual ENHANCEMENT MODE 960mW - 9 ns 700mW 2 P-Channel (Dual) SWITCHING 125m Ω @ 2.2A, 4.5V 1.5V @ 250μA 337pF @ 10V 5.2nC @ 4.5V 12ns 20V - 12 ns 2.2A -1V - 12V - - -20V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - 1mm 3mm 1.7mm - No No SVHC ROHS3 Compliant Lead Free
                                FDC6310P
                                FDC6310P

                                ON Semiconductor
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ON Semiconductor NVMFD5C650NLWFT1G
                                Mfr. Тип
                                NVMFD5C650NLWFT1G
                                Anlielectronics Тип

                                		ON Semiconductor
                                MOSFET 2N-CH 60V 111A S08FL
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 48 Weeks ACTIVE (Last Updated: 3 days ago) - - Surface Mount 8-PowerTDFN - - - - - 21A Ta 111A Tc - - -55°C~175°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101 e3 yes Active 1 (Unlimited) - - - - Tin (Sn) - - - - - - - - NOT SPECIFIED not_compliant - NOT SPECIFIED - - - - - - - - - - - - - 3.5W Ta 125W Tc 2 N-Channel (Dual) - 4.2m Ω @ 20A, 10V 2.2V @ 98μA 2546pF @ 25V 16nC @ 4.5V - 60V - - - - - - - - - - - - - - - Standard - - - - - - - - - ROHS3 Compliant -
                                  NVMFD5C650NLWFT1G
                                  NVMFD5C650NLWFT1G

                                  ON Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Diodes Incorporated DMP3098LSD-13
                                  Mfr. Тип
                                  DMP3098LSD-13
                                  Anlielectronics Тип

                                  		Diodes Incorporated
                                  Trans MOSFET P-CH 30V 4.4A 8-Pin SOP T/R
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON - 2 17.6 ns -55°C~150°C TJ Tape & Reel (TR) 2008 - e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - - 1.8W - GULL WING 260 - - 40 - 8 - - - - - - - ENHANCEMENT MODE 1.8W - 6 ns - 2 P-Channel (Dual) SWITCHING 65m Ω @ 5A, 10V 2.1V @ 250μA 336pF @ 25V 7.8nC @ 10V 5ns 30V - 5 ns 4.4A - - 20V - 0.065Ohm 30V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - 1.5mm 5.3mm 4.1mm - No No SVHC ROHS3 Compliant -
                                    DMP3098LSD-13
                                    DMP3098LSD-13

                                    Diodes Incorporated
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    ROHM Semiconductor EM6K34T2CR
                                    Mfr. Тип
                                    EM6K34T2CR
                                    Anlielectronics Тип

                                    		ROHM Semiconductor
                                    MOSFET 2N-CH 50V 0.2A EMT6
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 16 Weeks - - Surface Mount Surface Mount SOT-563, SOT-666 - - - - - - - - 150°C TJ Cut Tape (CT) - - - yes Active 1 (Unlimited) - - - - - - - - - - 120mW - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - - - - - - - 120mW 2 N-Channel (Dual) - 2.2 Ω @ 200mA, 4.5V 800mV @ 1mA 26pF @ 10V - - 50V - - 200mA - - - - - - - - - - - - Logic Level Gate, 0.9V Drive - - - - - - - - - ROHS3 Compliant Lead Free
                                      EM6K34T2CR
                                      EM6K34T2CR

                                      ROHM Semiconductor
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Diodes Incorporated DMN3032LFDB-7
                                      Mfr. Тип
                                      DMN3032LFDB-7
                                      Anlielectronics Тип

                                      		Diodes Incorporated
                                      MOSFET 2N-CH 30V 6.2A UDFN2020-6
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 23 Weeks - - Surface Mount Surface Mount 6-UDFN Exposed Pad - - U-DFN2020-6 (Type B) - - 6.2A - - -55°C~150°C TJ Tape & Reel (TR) 2015 - - - Active 1 (Unlimited) - - - - - 150°C -55°C - - - 1W - - - - - - - - - - - - - - - - - - - 1W 2 N-Channel (Dual) - 30mOhm @ 5.8A, 10V 2V @ 250μA 500pF @ 15V 10.6nC @ 10V - 30V - - 6.2A - - - - - - - - 500pF - - - Standard 30 mΩ - - - - - - - - ROHS3 Compliant -
                                        DMN3032LFDB-7
                                        DMN3032LFDB-7

                                        Diodes Incorporated
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Diodes Incorporated DMN2014LHAB-7
                                        Mfr. Тип
                                        DMN2014LHAB-7
                                        Anlielectronics Тип

                                        		Diodes Incorporated
                                        MOSFET 2N-CH 20V 9A 6-UDFN
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 14 Weeks - - Surface Mount Surface Mount 6-UFDFN Exposed Pad - 7 - - - 9A - 40.9 ns -55°C~150°C TJ Tape & Reel (TR) 2015 - e4 - Active 1 (Unlimited) - - EAR99 - Nickel/Palladium/Gold (Ni/Pd/Au) - - - - - 800mW - - 260 - - 30 - - - - - - - - - - - - 6.9 ns - 2 N-Channel (Dual) Common Drain - 13m Ω @ 4A, 4.5V 1.1V @ 250μA 1550pF @ 10V 16nC @ 4.5V 15.5ns 20V - 12 ns 9.3A - - 12V - - - - - - - - - Logic Level Gate - - - 600μm 3.05mm 2.05mm - - - ROHS3 Compliant -
                                          DMN2014LHAB-7
                                          DMN2014LHAB-7

                                          Diodes Incorporated
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: DMC3018LSD-13,BSZ0909NDXTMA1,DMN63D8LDW-13,CSD85312Q3E,DMG1026UV-7.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Arrays has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.