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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Number of Elements | Turn Off Delay Time | Usage Level | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Resistance | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Input Voltage-Nom | Configuration | Number of Channels | Analog IC - Other Type | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Output Current-Max | Transistor Application | Input Voltage (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Halogen Free | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Switcher Configuration | Continuous Drain Current (ID) | Threshold Voltage | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Switching Frequency-Max | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | Input Capacitance | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | FET Feature | Drain to Source Resistance | Rds On Max | Nominal Vgs | Feedback Cap-Max (Crss) | Height | Length | Width | Thickness | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипNVMFD5873NLWFT1GAnlielectronics Тип | ON Semiconductor |
Trans MOSFET N-CH 60V 10A Automotive 8-Pin DFN EP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | ACTIVE, NOT REC (Last Updated: 4 days ago) | - | - | Surface Mount | 8-PowerTDFN | YES | 8 | - | 37.393021mg | SILICON | - | 2 | - | - | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | - | e3 | yes | Not For New Designs | 1 (Unlimited) | 6 | - | EAR99 | - | Tin (Sn) | - | - | - | - | 3.1W | - | FLAT | - | - | - | - | - | - | - | 8 | AEC-Q101 | R-PDSO-F6 | - | - | - | - | Dual | ENHANCEMENT MODE | 3.1W | DRAIN | - | - | 2 N-Channel (Dual) | - | - | - | 13m Ω @ 15A, 10V | 2.5V @ 250μA | Halogen Free | 1560pF @ 25V | 30.5nC @ 10V | - | 60V | - | - | - | 10A | - | 20V | - | - | - | 0.013Ohm | 60V | 190A | - | - | - | 40 mJ | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| NVMFD5873NLWFT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипCSD87351Q5DAnlielectronics Тип | Texas Instruments |
Synchronous Buck NexFET Power Block 8-Pin LSON-CLIP EP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | Surface Mount | Surface Mount | 8-PowerLDFN | - | 8 | - | - | - | - | - | - | Military grade | -55°C~150°C TJ | Tape & Reel (TR) | - | NexFET™ | e3 | yes | Active | 1 (Unlimited) | 9 | - | EAR99 | - | - | - | - | - | - | 12W | - | - | 260 | 1 | 1.27mm | - | - | - | CSD87351 | 9 | - | - | 12V | - | - | SWITCHING CONTROLLER | Dual | - | 12W | - | - | - | 2 N-Channel (Dual) | 96A | - | 27V | 7.6m Ω @ 20A, 8V | 2.1V @ 250μA | - | 1255pF @ 15V | 7.7nC @ 4.5V | 16ns | 30V | - | 2.1 ns | PUSH-PULL | 32A | - | 8V | - | 1500kHz | - | - | 30V | - | - | - | - | - | - | Logic Level Gate | - | - | 2.1 V | - | - | 5mm | 6mm | 1.5mm | No | No SVHC | ROHS3 Compliant | Contains Lead | ||
| CSD87351Q5D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMN66D0LDW-7Anlielectronics Тип | Diodes Incorporated |
MOSFET 250mW 60Vdss
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | 6 | SOT-363 | 6.010099mg | - | 115mA Ta | 2 | 33 ns | - | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101 | - | - | Active | 1 (Unlimited) | - | - | - | - | - | 150°C | -55°C | - | - | 250mW | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | Dual | - | 250mW | - | 10 ns | 250mW Ta | 2 N-Channel (Dual) | - | - | - | 6Ohm @ 115mA, 5V | 2V @ 250μA | - | 23pF @ 25V | - | - | 60V | - | - | - | 115mA | - | 20V | - | - | - | - | 60V | - | - | 23pF | - | - | - | Standard | 6Ohm | 5 Ω | - | - | 1mm | 2.2mm | 1.35mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| DMN66D0LDW-7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNVMFD5C680NLT1GAnlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 60V 26A S08FL
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 48 Weeks | ACTIVE (Last Updated: 2 days ago) | - | - | Surface Mount | 8-PowerTDFN | - | - | - | - | - | 7.5A Ta 26A Tc | - | - | - | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | Active | 1 (Unlimited) | - | - | - | - | Tin (Sn) | - | - | - | - | - | - | - | NOT SPECIFIED | - | - | not_compliant | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | 3W Ta 19W Tc | 2 N-Channel (Dual) | - | - | - | 28m Ω @ 5A, 10V | 2.2V @ 13μA | - | 350pF @ 25V | 2nC @ 4.5V | - | 60V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Standard | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| NVMFD5C680NLT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNVDD5894NLT4GAnlielectronics Тип | ON Semiconductor |
MOSFET NFET DPAK 40V 64A 10 MOHM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | LIFETIME (Last Updated: 11 hours ago) | - | Surface Mount | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | - | 5 | - | 329.988449mg | - | 14A | - | 36 ns | - | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | - | e3 | yes | Obsolete | 1 (Unlimited) | - | - | EAR99 | - | Tin (Sn) | - | - | - | - | 3.8W | - | - | - | - | - | not_compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 12.4 ns | - | 2 N-Channel (Dual) Common Drain | - | - | - | 10m Ω @ 50A, 10V | 2.5V @ 250μA | - | 2103pF @ 25V | 41nC @ 10V | 30.2ns | - | - | 54 ns | - | 64A | - | 20V | - | - | - | - | 40V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| NVDD5894NLT4G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипCSD83325LTAnlielectronics Тип | Texas Instruments |
MOSFET 2N-CH 12V 6PICOSTAR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | ACTIVE (Last Updated: 5 days ago) | - | Surface Mount | Surface Mount | 6-XFBGA | - | 6 | - | - | SILICON | - | 2 | 711 ns | - | -55°C~150°C TJ | Tape & Reel (TR) | - | NexFET™ | - | yes | Active | 1 (Unlimited) | 6 | - | - | - | - | - | - | - | - | 2.3W | BOTTOM | NO LEAD | 260 | - | - | - | - | NOT SPECIFIED | CSD83325 | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | - | - | 205 ns | - | 2 N-Channel (Dual) Common Drain | - | SWITCHING | - | - | 1.25V @ 250μA | - | - | 10.9nC @ 4.5V | 353ns | 12V | - | 589 ns | - | 8A | 950mV | 10V | - | - | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Standard | 9.9mOhm | - | - | 144 pF | - | 1.11mm | 2.16mm | 200μm | - | No SVHC | ROHS3 Compliant | Lead Free | ||
| CSD83325LT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIPG20N06S415AATMA1Anlielectronics Тип | Infineon Technologies |
MOSFET 2N-CH 8TDSON
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount, Wettable Flank | 8-PowerVDFN | - | 8 | - | - | SILICON | - | 2 | - | - | -55°C~175°C TJ | Tape & Reel (TR) | 2015 | Automotive, AEC-Q101, OptiMOS™ | - | yes | Active | 1 (Unlimited) | 8 | - | - | - | - | - | - | - | - | 50W | - | FLAT | NOT SPECIFIED | - | - | not_compliant | - | NOT SPECIFIED | - | - | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | - | - | - | 2 N-Channel (Dual) | - | - | - | 15.5m Ω @ 17A, 10V | 4V @ 20μA | Halogen Free | 2260pF @ 25V | 29nC @ 10V | - | 60V | - | - | - | 20A | - | - | 60V | - | - | 0.0155Ohm | - | - | - | - | - | 90 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Contains Lead | ||
| IPG20N06S415AATMA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипUM6J1NTNAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2P-CH 30V 0.2A UMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | 6 | - | - | SILICON | - | 2 | 30 ns | - | 150°C TJ | Tape & Reel (TR) | 2011 | - | e2 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | TIN COPPER | - | - | - | - | 150mW | - | GULL WING | 260 | - | - | - | - | 10 | *J1 | 6 | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | - | 8 ns | - | 2 P-Channel (Dual) | - | SWITCHING | - | 1.4 Ω @ 200mA, 10V | 2.5V @ 1mA | - | 30pF @ 10V | - | 5ns | 30V | - | 40 ns | - | 200mA | - | 20V | - | - | 0.2A | - | - | - | - | - | 30V | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| UM6J1NTN | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипUM6K1NTNAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 30V .1A SOT-363
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | 6 | - | - | SILICON | - | 2 | 80 ns | - | 150°C TJ | Tape & Reel (TR) | 2006 | - | - | yes | Not For New Designs | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 13Ohm | - | - | - | - | 30V | 150mW | - | GULL WING | 260 | - | - | - | 100mA | 10 | *K1 | 6 | - | - | - | - | 1 | - | Dual | ENHANCEMENT MODE | 150mW | - | 15 ns | - | 2 N-Channel (Dual) | - | SWITCHING | - | 8 Ω @ 10mA, 4V | 1.5V @ 100μA | - | 13pF @ 5V | - | 35ns | - | - | 35 ns | - | 100mA | 1.5V | 20V | - | - | - | - | 30V | - | 30V | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | 1.5 V | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| UM6K1NTN | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMG5802LFX-7Anlielectronics Тип | Diodes Incorporated |
MOSFET 2N-CH 24V 6.5A 6DFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | Surface Mount | 6-VFDFN Exposed Pad | - | 6 | - | - | SILICON | - | 2 | 32.18 ns | - | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e4 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | HIGH RELIABILITY | - | 980mW | - | FLAT | 260 | - | - | - | - | 40 | - | 6 | - | - | - | - | - | - | - | ENHANCEMENT MODE | 980mW | - | 3.69 ns | - | 2 N-Channel (Dual) Common Drain | - | SWITCHING | - | 15m Ω @ 6.5A, 4.5V | 1.5V @ 250μA | - | 1066.4pF @ 15V | 31.3nC @ 10V | 13.43ns | 24V | - | 22.45 ns | - | 6.5A | - | 12V | - | - | - | 0.015Ohm | 24V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | 800μm | 5.1mm | 2.1mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| DMG5802LFX-7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAO4612Anlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 60V 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | - | 4.5A 3.2A | 2 | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | 2W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2W | - | - | - | N and P-Channel | - | - | - | 56m Ω @ 4.5A, 10V | 3V @ 250μA | - | 540pF @ 30V | 10.5nC @ 10V | - | 60V | - | - | - | 3.2A | - | 20V | - | - | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | - | ||
| AO4612 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMN4026SSD-13Anlielectronics Тип | Diodes Incorporated |
Trans MOSFET N-CH 40V 7A 8-Pin SO T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | 8-SO | 73.992255mg | - | 7A | 2 | 15.1 ns | - | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | 150°C | -55°C | - | - | 1.8W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | Dual | - | 1.8W | - | 5.3 ns | 1.3W | 2 N-Channel (Dual) | - | - | - | 24mOhm @ 6A, 10V | 3V @ 250μA | - | 1060pF @ 20V | 19.1nC @ 10V | 7.1ns | 40V | - | 4.8 ns | - | 7A | - | 20V | - | - | - | - | - | - | - | 1.06nF | - | - | - | Logic Level Gate | 20mOhm | 24 mΩ | - | - | 1.5mm | 4.95mm | 3.95mm | - | No | - | ROHS3 Compliant | Lead Free | ||
| DMN4026SSD-13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDG6318PZAnlielectronics Тип | ON Semiconductor |
MOSFET Dual PCh Digital
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | - | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | 6 | - | 28mg | SILICON | - | 2 | 40 ns | - | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | - | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | 780MOhm | Tin (Sn) | - | - | - | -20V | 300mW | - | GULL WING | 260 | - | - | - | -500mA | 30 | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 300mW | - | 10 ns | - | 2 P-Channel (Dual) | - | SWITCHING | - | 780m Ω @ 500mA, 4.5V | 1.5V @ 250μA | - | 85.4pF @ 10V | 1.62nC @ 4.5V | 13ns | 20V | - | 13 ns | - | 500mA | - | 12V | - | - | 0.5A | - | -20V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | 1mm | 2mm | 1.25mm | - | No | - | ROHS3 Compliant | Lead Free | ||
| FDG6318PZ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипZXMN2A04DN8TAAnlielectronics Тип | Diodes Incorporated |
Trans MOSFET N-CH 20V 7.7A 8-Pin SOIC T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 73.992255mg | SILICON | 5.9A | 2 | 50.5 ns | - | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | 25mOhm | Matte Tin (Sn) | - | - | LOW THRESHOLD | 20V | 2.1W | - | GULL WING | 260 | - | - | - | 6A | 40 | - | 8 | - | - | - | - | 2 | - | - | ENHANCEMENT MODE | 2.1W | - | 7.9 ns | 1.8W | 2 N-Channel (Dual) | - | SWITCHING | - | 25m Ω @ 5.9A, 4.5V | 700mV @ 250μA (Min) | - | 1880pF @ 10V | 22.1nC @ 5V | 14.8ns | - | - | 30.6 ns | - | 7.7A | - | 12V | - | - | 5.9A | - | 20V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | 1.5mm | 5mm | 4mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| ZXMN2A04DN8TA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMS3600ASAnlielectronics Тип | ON Semiconductor |
MOSFET iFET - Smart Harvest
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | ACTIVE (Last Updated: 2 days ago) | - | Surface Mount | Surface Mount | 8-PowerTDFN | - | 8 | - | 90mg | SILICON | 15A 30A | 2 | 38 ns | - | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Tin (Sn) | - | - | - | - | 2.5W | - | NO LEAD | NOT SPECIFIED | - | - | not_compliant | - | NOT SPECIFIED | - | - | - | R-PDSO-N6 | - | - | 2 | - | - | ENHANCEMENT MODE | - | DRAIN SOURCE | 13 ns | 2.2W 2.5W | 2 N-Channel (Dual) Asymmetrical | - | SWITCHING | - | 5.6m Ω @ 15A, 10V | 2.7V @ 250μA | - | 1770pF @ 13V | 27nC @ 10V | 5.3ns | 25V | - | 3.9 ns | - | 30A | - | 20V | - | - | 15A | 0.0056Ohm | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | 90 pF | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| FDMS3600AS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBUK7K8R7-40EXAnlielectronics Тип | Nexperia USA Inc. |
MOSFET 2N-CH 40V 30A 56LFPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | SOT-1205, 8-LFPAK56 | - | 8 | - | - | SILICON | - | 2 | - | - | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | - | - | - | Active | 1 (Unlimited) | 6 | - | - | - | - | - | - | - | - | 53W | - | GULL WING | NOT SPECIFIED | - | - | - | - | NOT SPECIFIED | - | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | DRAIN | - | 53W | 2 N-Channel (Dual) | - | SWITCHING | - | 8.5m Ω @ 15A, 10V | 4V @ 1mA | - | 1439pF @ 25V | 21.8nC @ 10V | - | 40V | - | - | - | 30A | - | - | - | - | - | - | - | 225A | - | - | 40V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| BUK7K8R7-40EX | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNVMFD5C478NLT1GAnlielectronics Тип | ON Semiconductor |
40V 14.5 MOHM T8 S08FL DU
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 48 Weeks | ACTIVE (Last Updated: 1 day ago) | - | - | Surface Mount | 8-PowerTDFN | - | - | - | - | - | 10.5A Ta 29A Tc | - | - | - | -55°C~175°C TJ | Tape & Reel (TR) | - | - | e3 | yes | Active | 1 (Unlimited) | - | - | - | - | Tin (Sn) | - | - | - | - | - | - | - | NOT SPECIFIED | - | - | - | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | 3.1W Ta 23W Tc | 2 N-Channel (Dual) | - | - | - | 14.5m Ω @ 7.5A, 10V | 2.2V @ 20μA | - | 420pF @ 25V | 8.1nC @ 10V | - | 40V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Standard | - | - | - | - | - | - | - | - | - | - | RoHS Compliant | - | ||
| NVMFD5C478NLT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипTPS1120DRAnlielectronics Тип | Texas Instruments |
MOSFET 2P-CH 15V 1.17A 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | ACTIVE (Last Updated: 5 days ago) | Gold | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | SILICON | - | 2 | 13 ns | - | -40°C~150°C TJ | Cut Tape (CT) | - | - | e4 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | - | - | - | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | -15V | 840mW | - | GULL WING | 260 | - | - | - | -1.17A | - | TPS1120 | 8 | - | - | - | - | - | - | - | ENHANCEMENT MODE | 840mW | - | 4.5 ns | - | 2 P-Channel (Dual) | - | SWITCHING | - | 180m Ω @ 1.5A, 10V | 1.5V @ 250μA | - | - | 5.45nC @ 10V | 10ns | - | - | 10 ns | - | 1.17A | - | 2V | - | - | - | 0.4Ohm | 15V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | 1.75mm | 4.9mm | 3.91mm | 1.58mm | No | - | ROHS3 Compliant | Lead Free | ||
| TPS1120DR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипZXMN6A25DN8TAAnlielectronics Тип | Diodes Incorporated |
MOSFET 2N-CH 60V 3.8A 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 73.992255mg | SILICON | 3.8A | 2 | 26.2 ns | - | -55°C~150°C TJ | Cut Tape (CT) | 2006 | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | 500mOhm | Matte Tin (Sn) | - | - | - | 60V | 2.1W | - | GULL WING | 260 | - | - | - | 4.7A | 40 | - | 8 | - | - | - | - | 2 | - | - | ENHANCEMENT MODE | 2.1W | - | 3.8 ns | 1.8W | 2 N-Channel (Dual) | - | SWITCHING | - | 50m Ω @ 3.6A, 10V | 1V @ 250μA (Min) | - | 1063pF @ 30V | 20.4nC @ 10V | 4ns | - | - | 10.6 ns | - | 5A | - | 20V | - | - | 3.6A | - | 60V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | 1.5mm | 5mm | 4mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| ZXMN6A25DN8TA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMC8097ACAnlielectronics Тип | ON Semiconductor |
MOSFET N/P-CH 150V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 1 week ago) | - | Surface Mount | Surface Mount | 8-PowerWDFN | - | 8 | - | 196mg | - | 2.4A Ta 900mA Tc | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | e4 | yes | Active | 1 (Unlimited) | - | - | EAR99 | - | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | - | - | - | - | 1.9W | - | - | 260 | - | - | - | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | Dual | - | - | - | - | - | N and P-Channel | - | - | - | 155m Ω @ 2.4A, 10V | 4V @ 250μA | - | 395pF @ 75V | 6.2nC @ 10V | - | 150V | N-CHANNEL AND P-CHANNEL | - | - | 2.4A | - | - | - | - | 6.3A | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| FDMC8097AC |
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