- Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - FETs, MOSFETs - Arrays
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Number of Terminals | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Drain Current-Max (ID) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Mfr | Number of Elements | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Resistance | Terminal Finish | Additional Feature | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Number of Channels | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Halogen Free | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Continuous Drain Current (ID) | Threshold Voltage | JEDEC-95 Code | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Interface IC Type | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Recovery Time | FET Feature | Drain to Source Resistance | Nominal Vgs | Feedback Cap-Max (Crss) | Height | Length | Width | Thickness | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипCSD87351ZQ5DAnlielectronics Тип | Texas Instruments |
MOSFET 2N-CH 30V 32A 8LSON
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | ACTIVE (Last Updated: 2 days ago) | Gold | Surface Mount | Surface Mount | 8-PowerLDFN | - | 8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | - | NexFET™ | e3 | yes | Active | 1 (Unlimited) | - | EAR99 | - | Matte Tin (Sn) | - | - | 12W | - | NO LEAD | 260 | not_compliant | - | NOT SPECIFIED | CSD87351 | - | - | - | - | - | - | - | - | - | - | - | - | 2 N-Channel (Dual) Asymmetrical | - | - | 2.1V @ 250μA | - | 1255pF @ 15V | 7.7nC @ 4.5V | 10ns | 30V | - | 4.2 ns | 32A | - | - | - | - | HALF BRIDGE BASED MOSFET DRIVER | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | 1.5mm | 5mm | 6mm | 1.5mm | - | - | ROHS3 Compliant | Contains Lead | ||
| CSD87351ZQ5D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипECH8668-TL-HAnlielectronics Тип | ON Semiconductor |
Trans MOSFET N/P-CH 20V 7.5A/5A 8-Pin ECH T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 2 Weeks | ACTIVE (Last Updated: 2 days ago) | - | - | Surface Mount | 8-SMD, Flat Lead | YES | 8 | - | - | - | SILICON | 7.5A 5A | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | 68 ns | 150°C TJ | Tape & Reel (TR) | 2009 | - | e6 | yes | Active | 1 (Unlimited) | 8 | EAR99 | - | Tin/Bismuth (Sn/Bi) | - | - | 1.5W | - | - | - | - | - | - | - | 8 | - | - | - | - | - | Dual | ENHANCEMENT MODE | 1.5W | - | 17.5 ns | - | N and P-Channel | SWITCHING | 17m Ω @ 4A, 4.5V | - | Halogen Free | 1060pF @ 10V | 10.8nC @ 4.5V | - | 20V | N-CHANNEL AND P-CHANNEL | - | 5A | - | - | 10V | - | - | - | 0.017Ohm | - | 40A | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | 900μm | 2.9mm | 2.3mm | - | No | - | ROHS3 Compliant | Lead Free | ||
| ECH8668-TL-H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBSC0910NDIATMA1Anlielectronics Тип | Infineon Technologies |
Trans MOSFET N-CH 25V 16A/31A 8-Pin TISON T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | 8-PowerTDFN | - | 8 | - | - | - | SILICON | 11A 31A | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | OptiMOS™ | e3 | yes | Active | 1 (Unlimited) | 6 | EAR99 | - | Tin (Sn) | - | - | 1W | - | NO LEAD | NOT SPECIFIED | not_compliant | - | NOT SPECIFIED | - | - | - | R-PDSO-N6 | - | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN SOURCE | - | - | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 4.6m Ω @ 25A, 10V | 2V @ 250μA | Halogen Free | 4500pF @ 12V | 6.6nC @ 4.5V | - | 25V | - | - | 31A | - | - | 20V | - | - | 11A | 0.0059Ohm | - | - | 25V | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate, 4.5V Drive | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| BSC0910NDIATMA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипQS8J4TRAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2P-CH 30V 4A TSMT8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | - | - | Surface Mount | Surface Mount | 8-SMD, Flat Lead | - | 8 | - | - | - | SILICON | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | 80 ns | 150°C TJ | Tape & Reel (TR) | 2012 | - | e2 | yes | Active | 1 (Unlimited) | 8 | EAR99 | - | Tin/Copper (Sn/Cu) | - | - | 550mW | - | - | 260 | - | - | 10 | - | 8 | - | - | - | - | 2 | - | ENHANCEMENT MODE | - | - | 8 ns | - | 2 P-Channel (Dual) | SWITCHING | 56m Ω @ 4A, 10V | 2.5V @ 1mA | - | 800pF @ 10V | 13nC @ 10V | 20ns | 30V | - | 50 ns | 4A | - | - | 20V | - | - | 4A | 0.056Ohm | -30V | 16A | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| QS8J4TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPMCXB900UEZAnlielectronics Тип | Nexperia USA Inc. |
PMCXB900UE - 20 V, complementary N/P-channel Trench MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | - | - | - | Surface Mount | 6-XFDFN Exposed Pad | YES | 6 | - | - | - | SILICON | 600mA 500mA | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | TrenchFET® | - | - | Active | 1 (Unlimited) | 6 | - | - | - | - | - | 265mW | DUAL | - | - | - | - | - | - | 6 | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | - | N and P-Channel Complementary | SWITCHING | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | - | 21.3pF @ 10V | 0.7nC @ 4.5V | - | 20V | N-CHANNEL AND P-CHANNEL | - | 500mA | - | - | 8V | - | - | - | - | - | - | 20V | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | - | ||
| PMCXB900UEZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипITD50N04S4L07ATMA1Anlielectronics Тип | Infineon Technologies |
ITD50N04 - 20V-40V N-CHANNEL AUT
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 1 Week | - | - | - | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | YES | - | PG-TO252-5-311 | - | 4 | SILICON | 50A (Tc) | 50 A | INFINEON TECHNOLOGIES AG | Infineon Technologies AG | ITD50N04S4L07ATMA1 | Infineon Technologies | 2 | Bulk | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G4 | RECTANGULAR | SMALL OUTLINE | Active | Active | NOT SPECIFIED | 5.73 | Yes | - | -55°C ~ 175°C (TJ) | - | - | - | e3 | - | - | - | - | EAR99 | - | Tin (Sn) | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | not_compliant | - | - | - | - | AEC-Q101 | R-PSSO-G4 | - | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | 46W (Tc) | 2 N-Channel (Dual) | - | 7.2mOhm @ 50A, 10V | 2.2V @ 18μA | - | 2480pF @ 25V | 33nC @ 10V | - | 40V | N-CHANNEL | - | - | - | TO-252 | - | - | - | - | 0.0072 Ω | - | 200 A | 40 V | 45 mJ | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | - | - | ||
| ITD50N04S4L07ATMA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипZXMN10A08DN8TAAnlielectronics Тип | Diodes Incorporated |
Trans MOSFET N-CH 100V 2.1A 8-Pin SOIC T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 73.992255mg | - | SILICON | 1.6A | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | 8 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | - | e3 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 250mOhm | Matte Tin (Sn) | - | 100V | 1.8W | - | GULL WING | 260 | - | 2.1A | 40 | - | 8 | - | - | - | SINGLE WITH BUILT-IN DIODE | 2 | - | ENHANCEMENT MODE | 1.8W | - | 3.4 ns | 1.25W | 2 N-Channel (Dual) | SWITCHING | 250m Ω @ 3.2A, 10V | 2V @ 250μA (Min) | - | 405pF @ 50V | 7.7nC @ 10V | 2.2ns | - | - | 2.2 ns | 2.1A | - | - | 20V | - | - | - | - | 100V | 9A | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | 1.5mm | 5mm | 4mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| ZXMN10A08DN8TA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBSS84AKV,115Anlielectronics Тип | Nexperia USA Inc. |
BSS84AKV Series 50 V 7.5 Ohm 170 mA Dual P-Channel Trench MOSFET - SOT-666
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | - | Tin | - | Surface Mount | SOT-563, SOT-666 | YES | 6 | - | - | - | SILICON | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | 48 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | Automotive, AEC-Q101, TrenchMOS™ | e3 | - | Active | 1 (Unlimited) | 6 | - | - | - | LOGIC LEVEL COMPATIBLE | - | 500mW | - | FLAT | - | - | - | - | - | 6 | - | - | - | - | - | - | ENHANCEMENT MODE | 330mW | - | 13 ns | - | 2 P-Channel (Dual) | SWITCHING | 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | - | 36pF @ 25V | 0.35nC @ 5V | 11ns | 50V | - | 25 ns | 170mA | - | - | 20V | -50V | - | 0.17A | 8.5Ohm | -50V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| BSS84AKV,115 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипCSD87502Q2TAnlielectronics Тип | Texas Instruments |
MOSFET 2N-CH 30V 5A 6WSON
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | ACTIVE (Last Updated: 6 days ago) | - | Surface Mount | Surface Mount | 6-WDFN Exposed Pad | - | 6 | - | - | - | SILICON | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Cut Tape (CT) | - | NexFET™ | e3 | yes | Active | 1 (Unlimited) | 6 | - | - | Matte Tin (Sn) | AVALANCHE RATED | - | 2.3W | - | NO LEAD | - | - | - | - | CSD87502 | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | - | DRAIN | - | - | 2 N-Channel (Dual) | SWITCHING | 32.4m Ω @ 4A, 10V | 2V @ 250μA | - | 353pF @ 15V | 6nC @ 10V | - | 30V | - | - | 5A | 1.6V | - | - | - | - | 5A | - | - | 23A | 30V | 3.1 mJ | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate, 5V Drive | - | - | 29 pF | - | 2mm | 2mm | 750μm | - | No SVHC | ROHS3 Compliant | Lead Free | ||
| CSD87502Q2T | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипZXMC3AMCTAAnlielectronics Тип | Diodes Incorporated |
Trans MOSFET N/P-CH 30V 3.7A/2.7A Automotive 8-Pin DFN EP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks | - | - | Surface Mount | Surface Mount | 8-WDFN Exposed Pad | - | 8 | - | - | - | SILICON | 2.9A 2.1A | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | 11.3 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | - | e4 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 210mOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | HIGH RELIABILITY | - | 1.7W | DUAL | - | 260 | - | - | 40 | - | 8 | - | - | - | - | - | - | ENHANCEMENT MODE | 2.45W | DRAIN | 1.5 ns | - | N and P-Channel | SWITCHING | 120m Ω @ 2.5A, 10V | 3V @ 250μA | - | 190pF @ 25V | 3.9nC @ 10V | 2.8ns | 30V | N-CHANNEL AND P-CHANNEL | 7.5 ns | 2.1A | - | - | 20V | - | - | 3.7A | - | -30V | 13A | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | 780μm | 3.08mm | 2.075mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| ZXMC3AMCTA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMC1229UFDB-7Anlielectronics Тип | Diodes Incorporated |
MOSFET N/P-CH 12V U-DFN2020-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | - | Gold | Surface Mount | Surface Mount | 6-UDFN Exposed Pad | - | 6 | - | - | - | SILICON | 5.6A 3.8A | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | 27.8 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e4 | - | Active | 1 (Unlimited) | 6 | EAR99 | - | - | HIGH RELIABILITY | - | 1.4W | DUAL | - | 260 | - | - | 30 | - | - | - | - | - | - | 2 | - | ENHANCEMENT MODE | - | DRAIN | 5.7 ns | - | N and P-Channel | SWITCHING | 29m Ω @ 5A, 4.5V | 1V @ 250μA | - | 914pF @ 6V | 19.6nC @ 8V | 11.5ns | 12V | N-CHANNEL AND P-CHANNEL | 26.4 ns | 3.8A | - | - | 8V | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 555μm | 2.08mm | 2.075mm | - | No | - | ROHS3 Compliant | Lead Free | ||
| DMC1229UFDB-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMN5L06VAK-7Anlielectronics Тип | Diodes Incorporated |
DMN5L06VAK: 50 V 2 Ohm Dual N-Channel Enhancement Mode Mosfet - SOT-563
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 19 Weeks | - | Tin | Surface Mount | Surface Mount | SOT-563, SOT-666 | - | 6 | - | 3.005049mg | - | SILICON | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | - | e3 | yes | Active | 1 (Unlimited) | 6 | EAR99 | - | - | - | - | 250mW | - | FLAT | 260 | - | - | 40 | DMN5L06VAK | 6 | - | - | - | - | - | Dual | ENHANCEMENT MODE | 250mW | - | - | - | 2 N-Channel (Dual) | SWITCHING | 2 Ω @ 50mA, 5V | 1V @ 250μA | - | 50pF @ 25V | - | - | 50V | - | - | 280mA | - | - | 20V | - | - | - | 3Ohm | 50V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | 5 pF | 600μm | 1.6mm | 1.2mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| DMN5L06VAK-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипQS6K21TRAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 45V 1A TSMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | - | 6 | - | - | - | SILICON | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | 16 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | - | e1 | yes | Not For New Designs | 1 (Unlimited) | 6 | EAR99 | - | - | - | - | 1.25W | - | GULL WING | - | - | - | - | *K21 | 6 | - | - | - | - | - | Dual | ENHANCEMENT MODE | 1.25W | - | 6 ns | - | 2 N-Channel (Dual) | SWITCHING | - | 1.5V @ 1mA | - | - | - | 8ns | 45V | - | 8 ns | 1A | - | - | 12V | - | - | 1A | - | 45V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | 300mOhm | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| QS6K21TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипTD9944TG-GAnlielectronics Тип | Microchip Technology |
Trans MOSFET N-CH 240V 8-Pin SOIC N T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 5 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 84.99187mg | - | SILICON | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e3 | - | Active | 1 (Unlimited) | 8 | EAR99 | - | Matte Tin (Sn) - annealed | LOW THRESHOLD | - | - | - | GULL WING | 260 | - | - | 40 | - | - | - | - | Not Qualified | SINGLE WITH BUILT-IN DIODE | 2 | - | ENHANCEMENT MODE | - | - | 10 ns | - | 2 N-Channel (Dual) | SWITCHING | 6 Ω @ 500mA, 10V | 2V @ 1mA | - | 125pF @ 25V | - | 10ns | - | - | 10 ns | 1A | - | - | 20V | - | - | - | 6Ohm | 240V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| TD9944TG-G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMS3602ASAnlielectronics Тип | ON Semiconductor |
MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | ACTIVE (Last Updated: 2 days ago) | - | Surface Mount | Surface Mount | 8-PowerTDFN | - | 8 | - | 171mg | - | SILICON | 15A 26A | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | 31 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 6 | EAR99 | - | Tin (Sn) | - | - | 2.5W | - | NO LEAD | NOT SPECIFIED | not_compliant | - | NOT SPECIFIED | - | - | - | R-PDSO-N6 | - | - | 2 | - | ENHANCEMENT MODE | - | DRAIN SOURCE | 12 ns | 2.2W 2.5W | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 5.6m Ω @ 15A, 10V | 3V @ 250μA | - | 1770pF @ 13V | 27nC @ 10V | 4.2ns | - | - | 3.2 ns | 26A | - | - | 20V | - | - | 15A | 0.0056Ohm | 25V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | 90 pF | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| FDMS3602AS | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF7904PBFAnlielectronics Тип | Infineon Technologies |
MOSFET 2N-CH 30V 7.6A/11A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | - | - | 7.6A 11A | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tube | 2006 | HEXFET® | - | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | 30V | 2W | - | - | - | - | 7.6A | - | IRF7904PBF | - | - | - | - | - | - | Dual | - | 2W | - | - | 1.4W 2W | 2 N-Channel (Dual) | - | 16.2m Ω @ 7.6A, 10V | 2.25V @ 25μA | - | 910pF @ 15V | 11nC @ 4.5V | - | - | - | - | 11A | 2.25V | - | 20V | - | - | - | - | 30V | - | - | - | - | 17 ns | Logic Level Gate | - | - | - | 1.4986mm | 4.9784mm | 3.9878mm | - | No | No SVHC | RoHS Compliant | Exempt | ||
| IRF7904PBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMN53D0LDW-7Anlielectronics Тип | Diodes Incorporated |
MOSFET 2N-CH 50V 0.36A SOT363
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | - | - | 6.010099mg | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 19 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | - | e3 | - | Active | 1 (Unlimited) | - | EAR99 | - | Matte Tin (Sn) | - | - | 310mW | - | - | 260 | - | - | 30 | - | - | - | - | - | - | 2 | Dual | - | - | - | 2.7 ns | - | 2 N-Channel (Dual) | - | 1.6 Ω @ 500mA, 10V | 1.5V @ 250μA | - | 46pF @ 25V | 0.6nC @ 4.5V | 2.5ns | 50V | - | 11 ns | 360mA | - | - | 20V | - | - | - | - | 50V | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DMN53D0LDW-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNX3020NAKS,115Anlielectronics Тип | Nexperia USA Inc. |
MOSFET 2N-CH 30V 0.18A 6TSSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | - | - | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | YES | 6 | - | - | - | SILICON | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | 34 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e3 | - | Active | 1 (Unlimited) | 6 | - | - | Tin (Sn) | - | - | 375mW | - | GULL WING | - | - | - | - | - | 6 | - | - | - | - | 2 | Dual | ENHANCEMENT MODE | 375mW | - | 5 ns | - | 2 N-Channel (Dual) | SWITCHING | 4.5 Ω @ 100mA, 10V | 1.5V @ 250μA | - | 13pF @ 10V | 0.44nC @ 4.5V | 5ns | - | - | 17 ns | 180mA | - | - | 20V | 30V | - | 0.18A | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| NX3020NAKS,115 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAUIRF7379QTRAnlielectronics Тип | Infineon Technologies |
MOSFET N/P-CH 30V 5.8A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | - | SILICON | 5.8A 4.3A | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 8 | EAR99 | - | Matte Tin (Sn) | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | - | 2.5W | - | GULL WING | - | - | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 2.5W | - | - | - | N and P-Channel | SWITCHING | 45m Ω @ 5.8A, 10V | 3V @ 250μA | - | 520pF @ 25V | 25nC @ 10V | - | - | N-CHANNEL AND P-CHANNEL | - | 4.3A | 1V | - | 20V | - | - | - | 0.045Ohm | 30V | 46A | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | 1 V | - | 1.5mm | 5mm | 4mm | - | No | No SVHC | ROHS3 Compliant | - | ||
| AUIRF7379QTR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAO8820Anlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 7A 8-TSSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | 8-TSSOP (0.173, 4.40mm Width) | - | 8 | - | - | - | SILICON | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | - | - | - | - | Active | 1 (Unlimited) | 8 | - | - | - | - | - | 1.5W | - | GULL WING | NOT SPECIFIED | - | - | NOT SPECIFIED | - | - | - | - | - | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | 1.5W | 2 N-Channel (Dual) Common Drain | SWITCHING | 21m Ω @ 7A, 10V | 1.1V @ 250μA | - | 500pF @ 10V | 9nC @ 4.5V | - | 20V | - | - | 7A | - | - | - | - | - | 7A | 0.021Ohm | - | - | 20V | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| AO8820 |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ