- Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - FETs, MOSFETs - Arrays
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Number of Elements | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Resistance | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Number of Channels | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Halogen Free | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Continuous Drain Current (ID) | Threshold Voltage | Gate to Source Voltage (Vgs) | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | Input Capacitance | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Recovery Time | FET Feature | Drain to Source Resistance | Rds On Max | Nominal Vgs | Feedback Cap-Max (Crss) | Height | Length | Width | Thickness | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипFDMA3028NAnlielectronics Тип | ON Semiconductor |
MOSFET 30V Dual N-Channel
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Surface Mount | 6-VDFN Exposed Pad | - | 6 | - | 40mg | SILICON | - | 2 | 15 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e4 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | - | - | 1.5W | - | - | - | - | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 1.5W | DRAIN | 5.3 ns | 700mW | 2 N-Channel (Dual) | SWITCHING | 68m Ω @ 3.8A, 4.5V | 1.5V @ 250μA | - | 375pF @ 15V | 5.2nC @ 5V | 3ns | 30V | - | 2.5 ns | 3.8A | - | 12V | - | - | 30V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | 45 pF | 800μm | 2mm | 2mm | - | No | - | ROHS3 Compliant | Lead Free | ||
| FDMA3028N | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип2SK3018FPDT106Anlielectronics Тип | ROHM Semicon |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 2SK3018FPDT106 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNVMD3P03R2GAnlielectronics Тип | ON Semiconductor |
MOSFET 2P-CH 30V 2.34A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | ACTIVE (Last Updated: 1 week ago) | Surface Mount | - | SOIC | - | 8 | - | 540.001716mg | - | - | - | - | - | Tape & Reel (TR) | 2006 | - | e3 | yes | Active | 1 (Unlimited) | - | - | EAR99 | - | Tin (Sn) | 150°C | -55°C | - | - | 730mW | - | - | - | - | - | - | - | 8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 30V | - | - | 2.34A | - | 20V | - | - | -30V | - | - | 750pF | - | - | - | - | - | - | 85mOhm | 85 mΩ | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| NVMD3P03R2G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNVMFD5C462NLWFT1GAnlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 40V 84A S08FL
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | - | Surface Mount | 8-PowerTDFN | YES | - | - | - | SILICON | 18A Ta 84A Tc | 2 | - | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | Active | 1 (Unlimited) | 6 | - | - | - | Tin (Sn) | - | - | - | - | - | - | FLAT | - | not_compliant | - | - | - | - | - | R-PDSO-F6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | 3W Ta 50W Tc | 2 N-Channel (Dual) | - | 4.7m Ω @ 10A, 10V | 2.2V @ 40μA | - | 1300pF @ 25V | 11nC @ 4.5V | - | 40V | - | - | - | - | - | - | 0.0077Ohm | - | 311A | - | - | 40V | 174 mJ | METAL-OXIDE SEMICONDUCTOR | 50W | - | Standard | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| NVMFD5C462NLWFT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNX1029X,115Anlielectronics Тип | Nexperia USA Inc. |
MOSFET N/P-CH 60V/50V SOT666
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | - | - | Surface Mount | SOT-563, SOT-666 | - | 6 | - | - | - | 330mA 170mA | 2 | 48 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, TrenchMOS™ | e3 | - | Active | 1 (Unlimited) | - | - | - | - | Tin (Sn) | - | - | - | - | 500mW | - | - | - | - | - | - | - | 6 | - | - | - | - | - | - | - | 500mW | - | - | - | N and P-Channel | - | 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | - | 36pF @ 25V | 0.35nC @ 5V | 11ns | 60V 50V | - | 25 ns | 170mA | - | 20V | - | - | -50V | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| NX1029X,115 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNVMFD5489NLT1GAnlielectronics Тип | ON Semiconductor |
Trans MOSFET N-CH 60V 12A 8-Pin DFN T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | ACTIVE, NOT REC (Last Updated: 4 days ago) | - | Surface Mount | 8-PowerTDFN | YES | 8 | - | 37.393021mg | - | 4.5A | - | 31 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | - | e3 | yes | Not For New Designs | 1 (Unlimited) | - | - | EAR99 | - | Tin (Sn) | - | - | - | - | 3W | - | - | - | - | - | - | - | 8 | - | - | - | - | 2 | Dual | - | - | - | 7 ns | - | 2 N-Channel (Dual) | - | 65m Ω @ 15A, 10V | 2.5V @ 250μA | Halogen Free | 330pF @ 25V | 12.4nC @ 10V | 11ns | 60V | - | 21 ns | 12A | - | 20V | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| NVMFD5489NLT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMS3624SAnlielectronics Тип | ON Semiconductor |
MOSFET 25V PowerTrench Power Stage
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | ACTIVE (Last Updated: 3 days ago) | Surface Mount | - | - | - | 8 | - | 90mg | - | - | 2 | 23 ns | - | Tape & Reel (TR) | - | - | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Tin (Sn) | 150°C | -55°C | - | - | 1W | - | - | - | - | - | - | - | - | - | R-PDSO-N6 | - | - | - | Dual | ENHANCEMENT MODE | 2.5W | DRAIN SOURCE | 7 ns | - | - | SWITCHING | - | - | - | - | - | - | 25V | N-CHANNEL | - | 30A | - | 12V | 17.5A | - | 25V | - | - | 1.57nF | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | 5mOhm | 5 mΩ | - | - | 1.05mm | 5.1mm | 6.1mm | - | No | - | ROHS3 Compliant | - | ||
| FDMS3624S | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAO4620Anlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 30V 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | SILICON | - | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | - | - | - | - | Active | 1 (Unlimited) | 8 | - | EAR99 | - | - | - | - | - | - | 2W | DUAL | GULL WING | - | - | - | - | - | 8 | - | - | Not Qualified | - | - | - | ENHANCEMENT MODE | 2W | - | - | - | N and P-Channel | SWITCHING | 24m Ω @ 7.2A, 10V | 2.6V @ 250μA | - | 448pF @ 15V | 11nC @ 10V | - | 30V | N-CHANNEL AND P-CHANNEL | - | - | - | 20V | - | - | - | - | - | - | 30V | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| AO4620 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипCPH6636R-TL-WAnlielectronics Тип | ON Semiconductor |
Trans MOSFET N-CH 24V 6A 6-Pin CPH T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | LAST SHIPMENTS (Last Updated: 1 day ago) | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | - | - | - | - | - | - | - | 22 μs | 150°C TJ | Tape & Reel (TR) | - | - | e6 | yes | Obsolete | 1 (Unlimited) | - | - | EAR99 | - | Tin/Bismuth (Sn/Bi) | - | - | - | - | 900mW | - | - | - | not_compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | 65 ns | - | 2 N-Channel (Dual) Common Drain | - | 20m Ω @ 3A, 4.5V | - | - | - | 3nC @ 4.5V | 300ns | 24V | - | 98 μs | 6A | - | 12V | - | - | 24V | - | - | - | - | - | - | - | - | Logic Level Gate, 2.5V Drive | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| CPH6636R-TL-W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипVT6K1T2CRAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 20V 0.1A VMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | Surface Mount | Surface Mount | 6-SMD, Flat Leads | - | 6 | - | - | SILICON | - | 2 | 20 ns | 150°C TJ | Cut Tape (CT) | 2011 | - | e1 | - | Active | 1 (Unlimited) | 6 | - | EAR99 | - | TIN SILVER COPPER | - | - | - | - | 120mW | - | - | 260 | - | - | 10 | - | 6 | - | - | - | - | 2 | - | ENHANCEMENT MODE | - | - | 5 ns | - | 2 N-Channel (Dual) | SWITCHING | 3.5 Ω @ 100mA, 4.5V | 1V @ 100μA | - | 7.1pF @ 10V | - | 4ns | 20V | - | 38 ns | 100mA | - | 8V | 0.1A | - | 20V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate, 1.2V Drive | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| VT6K1T2CR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипQS8M51TRAnlielectronics Тип | ROHM Semiconductor |
MOSFET N/P-CH 100V 2A/1.5A TSMT8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | - | Surface Mount | Surface Mount | 8-SMD, Flat Lead | - | 8 | - | - | SILICON | 2A 1.5A | 2 | - | 150°C TJ | Tape & Reel (TR) | 2015 | - | - | - | Active | 1 (Unlimited) | 8 | - | EAR99 | - | - | - | - | - | - | 1.5W | DUAL | - | - | - | - | - | *M51 | 8 | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | 10 ns | - | N and P-Channel | SWITCHING | 325m Ω @ 2A, 10V | 2.5V @ 1mA | - | 290pF @ 25V | 4.7nC @ 5V | - | 100V | N-CHANNEL AND P-CHANNEL | - | 1.5A | - | 20V | 2A | 0.355Ohm | - | 6A | - | - | 100V | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| QS8M51TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF8513PBFAnlielectronics Тип | Infineon Technologies |
MOSFET 2N-CH 30V 8A/11A 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | 8-SO | - | - | 8A 11A | 2 | - | -55°C~175°C TJ | Tube | 2008 | - | - | - | Obsolete | 1 (Unlimited) | - | SMD/SMT | - | 15.5MOhm | - | 175°C | -55°C | - | - | 2.4W | - | - | - | - | - | - | IRF8513PBF | - | - | - | - | - | - | Dual | - | 2.4W | - | - | 1.5W 2.4W | 2 N-Channel (Dual) | - | 15.5mOhm @ 8A, 10V | 2.35V @ 25μA | - | 766pF @ 15V | 8.6nC @ 4.5V | - | 30V | - | - | 8A | 1.8V | 20V | - | - | 30V | - | 30V | 766pF | - | - | - | - | 23 ns | Logic Level Gate | 22.2mOhm | 15.5 mΩ | 1.8 V | - | 1.4986mm | 4.9784mm | 3.9878mm | - | No | No SVHC | RoHS Compliant | Lead Free | ||
| IRF8513PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNVJD5121NT1GAnlielectronics Тип | ON Semiconductor |
MOSFET NFET SC88 60V 295MA 1.6OH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | - | - | - | - | - | - | 34 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | - | e3 | yes | Active | 1 (Unlimited) | - | - | - | - | Tin (Sn) | - | - | - | - | 250mW | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | 22 ns | - | 2 N-Channel (Dual) | - | 1.6 Ω @ 500mA, 10V | 2.5V @ 250μA | - | 26pF @ 20V | 0.9nC @ 4.5V | 34ns | 60V | - | 32 ns | 295mA | - | 20V | - | - | 60V | - | - | - | - | - | - | - | - | Standard | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| NVJD5121NT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBUK9K6R8-40EXAnlielectronics Тип | Nexperia USA Inc. |
MOSFET 2N-CH 40V 40A 56LFPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Surface Mount | Surface Mount | SOT-1205, 8-LFPAK56 | - | 8 | - | - | SILICON | - | 2 | - | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | - | - | - | Active | 1 (Unlimited) | 6 | - | - | - | - | - | - | - | - | 64W | - | GULL WING | - | - | - | - | - | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | 64W | 2 N-Channel (Dual) | SWITCHING | 6.1m Ω @ 10A, 10V | 2.1V @ 1mA | - | 3000pF @ 25V | 22.2nC @ 5V | - | 40V | - | - | 40A | - | - | - | 0.0072Ohm | - | 265A | - | - | 40V | 125 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| BUK9K6R8-40EX | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNVMFD5483NLT1GAnlielectronics Тип | ON Semiconductor |
Trans MOSFET N-CH 60V 6.4A Automotive 8-Pin DFN EP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | ACTIVE, NOT REC (Last Updated: 3 days ago) | - | Surface Mount | 8-PowerTDFN | - | 8 | - | - | - | - | 2 | 37.5 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | - | e3 | yes | Not For New Designs | 1 (Unlimited) | - | - | EAR99 | - | Tin (Sn) | - | - | - | - | 3.1W | - | - | - | - | - | - | - | 8 | - | - | - | - | - | Dual | - | 3.1W | - | 6.8 ns | - | 2 N-Channel (Dual) | - | 36m Ω @ 15A, 10V | 2.5V @ 250μA | Halogen Free | 668pF @ 25V | 23.4nC @ 10V | 10.3ns | 60V | - | 23.5 ns | 6.4A | - | 20V | - | - | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| NVMFD5483NLT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFW4604-TL-2WAnlielectronics Тип | ON Semiconductor |
MOSFET NCH PCH 4.5V DRIVE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | ACTIVE, NOT REC (Last Updated: 5 days ago) | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | - | 540.001716mg | - | 6A 4.5A | - | 43 ns | 150°C TJ | Tape & Reel (TR) | 2015 | - | e3 | yes | Not For New Designs | 1 (Unlimited) | - | - | EAR99 | - | Tin (Sn) | - | - | - | - | 1.8W | - | - | - | - | - | - | - | 8 | - | - | - | - | 2 | Dual | - | - | - | 7.5 ns | - | N and P-Channel | - | 39m Ω @ 6A, 10V | - | - | 490pF @ 10V | 9.1nC @ 10V | 42ns | 30V | N-CHANNEL AND P-CHANNEL | 40 ns | 4.5A | - | 20V | 6A | - | -30V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate, 4.5V Drive | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| FW4604-TL-2W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMC2700UDM-7Anlielectronics Тип | Diodes Incorporated |
Trans MOSFET N/P-CH 20V 1.34A/1.14A Automotive 6-Pin SOT-26 T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks | - | Surface Mount | Surface Mount | SOT-23-6 | - | 6 | - | - | SILICON | 1.34A 1.14A | 2 | 28.4 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | - | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Matte Tin (Sn) | - | - | HIGH RELIABILITY, LOW THRESHOLD | - | 1.12W | DUAL | GULL WING | 260 | - | - | 40 | DMC2700UDM | 6 | - | - | - | - | - | - | ENHANCEMENT MODE | 1.12W | - | 5.1 ns | - | N and P-Channel | SWITCHING | 400m Ω @ 600mA, 4.5V | 1V @ 250μA | - | 60.67pF @ 16V | 0.74nC @ 4.5V | - | - | N-CHANNEL AND P-CHANNEL | - | 1.14A | - | 6V | 1.34A | 0.4Ohm | 20V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | 1.3mm | 3.1mm | 1.7mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| DMC2700UDM-7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипCSD75208W1015Anlielectronics Тип | Texas Instruments |
TEXAS INSTRUMENTS CSD75208W1015Dual MOSFET, Dual P Channel, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Surface Mount | 6-UFBGA, DSBGA | - | 6 | - | - | SILICON | 1.6A | 2 | 29 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | NexFET™ | e1 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | - | - | 750mW | BOTTOM | BALL | 260 | - | - | NOT SPECIFIED | CSD75208 | - | - | - | - | - | 2 | - | ENHANCEMENT MODE | - | - | 9 ns | - | 2 P-Channel (Dual) Common Source | SWITCHING | 68m Ω @ 1A, 4.5V | 1.1V @ 250μA | - | 410pF @ 10V | 2.5nC @ 4.5V | 5ns | 20V | - | 11 ns | -1.6A | -800mV | -6V | - | 0.15Ohm | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | 10 pF | 1mm | 1.5mm | 1.8mm | 2mm | - | No SVHC | ROHS3 Compliant | Lead Free | ||
| CSD75208W1015 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипQS5K2TRAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 30V 2A TSMT5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | - | Surface Mount | Surface Mount | SOT-23-5 Thin, TSOT-23-5 | - | 5 | - | - | SILICON | - | 2 | 21 ns | 150°C TJ | Tape & Reel (TR) | 2006 | - | e1 | yes | Active | 1 (Unlimited) | 5 | - | EAR99 | 100MOhm | TIN SILVER COPPER | - | - | - | 30V | 1.25W | - | GULL WING | 260 | - | 2A | 10 | *K2 | 5 | - | - | - | - | - | Dual | ENHANCEMENT MODE | 1.25W | - | 8 ns | - | 2 N-Channel (Dual) Common Source | SWITCHING | 100m Ω @ 2A, 4.5V | 1.5V @ 1mA | - | 175pF @ 10V | 3.9nC @ 4.5V | 10ns | - | - | 10 ns | 2A | 1.5V | 12V | 2A | - | 30V | 8A | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | 1.5 V | - | 850μm | 2.9mm | 1.6mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| QS5K2TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипQS6M3TRAnlielectronics Тип | ROHM Semiconductor |
MOSFET N/P-CH 30V/20V 1.5A TSMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 25 Weeks | - | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | - | 6 | - | - | SILICON | - | 2 | 45 ns | 150°C TJ | Tape & Reel (TR) | 2006 | - | e1 | yes | Not For New Designs | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 360MOhm | - | - | - | - | - | 900mW | - | GULL WING | 260 | - | 1.5A | 10 | *M3 | 6 | - | - | - | - | - | Dual | ENHANCEMENT MODE | 1.25W | - | - | - | N and P-Channel | SWITCHING | 230m Ω @ 1.5A, 4.5V | 1.5V @ 1mA | - | 80pF @ 10V | 1.6nC @ 4.5V | 12ns | 30V 20V | N-CHANNEL AND P-CHANNEL | 12 ns | 1.5A | 1.5V | 12V | - | - | -20V | - | 30V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | 1.5 V | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| QS6M3TR |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ