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Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Contact Plating Package / Case Surface Mount Housing Material Weight Number of Terminals Transistor Element Material PCB Mounting Orientation Brand Contact Materials Drain Current-Max (ID) Factory Pack QuantityFactory Pack Quantity Id - Continuous Drain Current Ihs Manufacturer Manufacturer Manufacturer Part Number Maximum Operating Temperature Minimum Operating Temperature Mounting Styles Number of Elements Operating Temperature-Max Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Pd - Power Dissipation Rds On - Drain-Source Resistance Reflow Temperature-Max (s) Risk Rank RoHS Transistor Polarity Unit Weight Vds - Drain-Source Breakdown Voltage Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Packaging JESD-609 Code Termination ECCN Code Type Number of Positions Terminal Finish Additional Feature Subcategory Technology Terminal Position Orientation Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Pin Count JESD-30 Code Qualification Status Operating Frequency Housing Color Lead Length Configuration ELV Operating Mode Case Connection Output Power Transistor Application Polarity/Channel Type Product Type Gain Drain Current-Max (Abs) (ID) DS Breakdown Voltage-Min FET Technology Power Dissipation-Max (Abs) Stackable Highest Frequency Band Product Category Height Length Width Flammability Rating
Advanced AGR19180EF
Mfr. Тип
AGR19180EF
Anlielectronics Тип

Advanced
RF MOSFET Transistors 1.93-1.99GHz 38Watt Gain 14.5dB
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 - - YES - - 4 SILICON - Advanced Semiconductor, Inc. - - 10 - BROADCOM LTD Advanced Semiconductor, Inc. AGR19180EF - - - 2 200 °C CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, R-CDFM-F4 RECTANGULAR FLANGE MOUNT Active - - 30 5.25 Details - - - - - Tray e0 - EAR99 RF Power MOSFET - TIN LEAD HIGH RELIABILITY MOSFETs Si DUAL - FLAT 225 compliant - R-CDFM-F4 Not Qualified - - - COMMON SOURCE, 2 ELEMENTS - ENHANCEMENT MODE SOURCE - AMPLIFIER N-CHANNEL RF MOSFET Transistors - - 65 V METAL-OXIDE SEMICONDUCTOR 500 W - L BAND RF MOSFET Transistors - - - -
    AGR19180EF
    AGR19180EF

    Advanced
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Advanced AGR09045EF
    Mfr. Тип
    AGR09045EF
    Anlielectronics Тип

    		Advanced
    RF MOSFET Transistors RF Transistor
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - - YES - - 2 SILICON - Advanced Semiconductor, Inc. - 4.25 A - 4.25 A AVAGO TECHNOLOGIES INC Advanced Semiconductor, Inc. AGR09045EF + 200 C - 65 C - 1 200 °C CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, R-CDFM-F2 RECTANGULAR FLANGE MOUNT Active 117 W - 30 5.25 Details N-Channel - 65 V 15 V 4.8 V Tray e0 - EAR99 RF Power MOSFET - TIN LEAD HIGH RELIABILITY MOSFETs Si DUAL - FLAT 225 compliant - R-CDFM-F2 Not Qualified 895 MHz - - Single - ENHANCEMENT MODE SOURCE - AMPLIFIER N-CHANNEL RF MOSFET Transistors - - 65 V METAL-OXIDE SEMICONDUCTOR 125 W - ULTRA HIGH FREQUENCY BAND RF MOSFET Transistors - - - -
      AGR09045EF
      AGR09045EF

      Advanced
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Advanced AGR18125EF
      Mfr. Тип
      AGR18125EF
      Anlielectronics Тип

      		Advanced
      RF MOSFET Transistors 1.8-1.88GHz 125Watt Gain 13.5dB
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 - - YES - - 2 SILICON - Advanced Semiconductor, Inc. - - 10 - AVAGO TECHNOLOGIES INC Advanced Semiconductor, Inc. AGR18125EF - - - 1 200 °C CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, R-CDFM-F2 RECTANGULAR FLANGE MOUNT Active - - 30 5.25 Details - - - - - Tray e0 - EAR99 - - TIN LEAD HIGH RELIABILITY MOSFETs Si DUAL - FLAT 225 compliant - R-CDFM-F2 Not Qualified - - - SINGLE - ENHANCEMENT MODE SOURCE - AMPLIFIER N-CHANNEL RF MOSFET Transistors - - 65 V METAL-OXIDE SEMICONDUCTOR 350 W - L BAND RF MOSFET Transistors - - - -
        AGR18125EF
        AGR18125EF

        Advanced
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Advanced MRF151G
        Mfr. Тип
        MRF151G
        Anlielectronics Тип

        		Advanced
        RF MOSFET Transistors RF Transistor
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - - - - - - - - Advanced Semiconductor, Inc. - - 1 40 A - Advanced Semiconductor, Inc. - + 200 C - 65 C SMD/SMT - - - - - - - - 5 mOhms - - Details Dual N-Channel 0.642339 oz 125 V - - Tray - - - RF Power MOSFET - - - MOSFETs Si - - - - - - - - 175 MHz - - - - - - 300 W - - RF MOSFET Transistors 16 dB - - - - - - RF MOSFET Transistors - - - -
          MRF151G
          MRF151G

          Advanced
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Advanced MRF172
          Mfr. Тип
          MRF172
          Anlielectronics Тип

          		Advanced
          RF MOSFET Transistors RF Transistor
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 - 211-07-3 NO - - 4 SILICON - Advanced Semiconductor, Inc. - 9 A - 9 A ASI SEMICONDUCTOR INC Advanced Semiconductor, Inc. MRF172 + 200 C - 65 C SMD/SMT - 200 °C CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, O-CRFM-F4 ROUND FLANGE MOUNT Active 220 W 1.5 mOhms - 4.61 Details N-Channel - 65 V 40 V 5 V Tray - - EAR99 RF Power MOSFET - - - MOSFETs Si RADIAL - FLAT - unknown 4 O-CRFM-F4 Not Qualified 200 MHz - - Single - ENHANCEMENT MODE - 80 W AMPLIFIER N-CHANNEL RF MOSFET Transistors 10 dB 9 A 65 V METAL-OXIDE SEMICONDUCTOR 220 W - VERY HIGH FREQUENCY BAND RF MOSFET Transistors - - - -
            MRF172
            MRF172

            Advanced
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Advanced MRF171
            Mfr. Тип
            MRF171
            Anlielectronics Тип

            		Advanced
            RF MOSFET Transistors RF Transistor
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - 211-07-3 - - 3.175147 kg - - - Advanced Semiconductor, Inc. - - 1 4.5 A - Advanced Semiconductor, Inc. - + 200 C - 65 C SMD/SMT - - - - - - - 115 W 0.7 mOhms - - Non-Compliant N-Channel 0.297389 oz 65 V 40 V 6 V Tray - - - RF Power MOSFET - - - MOSFETs Si - - - - - - - - 200 MHz - - Single - - - 45 W - - RF MOSFET Transistors 15 dB - - - - - - RF MOSFET Transistors 107.95 mm 476.25 mm 463.55 mm -
              MRF171
              MRF171

              Advanced
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Advanced AGR09030EF
              Mfr. Тип
              AGR09030EF
              Anlielectronics Тип

              		Advanced
              RF MOSFET Transistors RF Transistor
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - - YES - - 2 SILICON - Advanced Semiconductor, Inc. - 4.25 A - 4.25 A BROADCOM LTD Advanced Semiconductor, Inc. AGR09030EF + 200 C - 65 C - 1 200 °C CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, R-CDFM-F2 RECTANGULAR FLANGE MOUNT Active 80 W - 30 5.2 Details N-Channel - 65 V 15 V 5 V Tray e0 - EAR99 RF Power MOSFET - TIN LEAD HIGH RELIABILITY MOSFETs Si DUAL - FLAT 225 compliant - R-CDFM-F2 Not Qualified 895 MHz - - Single - ENHANCEMENT MODE SOURCE - AMPLIFIER N-CHANNEL RF MOSFET Transistors - - 65 V METAL-OXIDE SEMICONDUCTOR - - ULTRA HIGH FREQUENCY BAND RF MOSFET Transistors - - - -
                AGR09030EF
                AGR09030EF

                Advanced
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Advanced BLF378
                Mfr. Тип
                BLF378
                Anlielectronics Тип

                		Advanced
                RF MOSFET Transistors RF Transistor
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 Gold SOT-262A - Polyester - - - Vertical Advanced Semiconductor, Inc. Bronze - 1 18 A - Advanced Semiconductor, Inc. - + 200 C - 65 C SMD/SMT - - - - - - - 500 W 300 mOhms - - Non-Compliant N-Channel 0.001058 oz 125 V 20 V 7 V Tray - Solder - - 32 - - MOSFETs Si - Vertical - - - - - - 225 MHz Green 3.1 mm Single Compliant - - - - - RF MOSFET Transistors - - - - - Yes - RF MOSFET Transistors - - - UL94 V-0
                  BLF378
                  BLF378

                  Advanced
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Advanced MRF426
                  Mfr. Тип
                  MRF426
                  Anlielectronics Тип

                  		Advanced
                  RF MOSFET Transistors RF Transistor
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - - - - - - - - Advanced Semiconductor, Inc. - - - - - Advanced Semiconductor, Inc. - - - - - - - - - - - - - - - Details - 0.385974 oz - - - Tray - - - - - - - MOSFETs Si - - - - - - - - - - - - - - - - - - RF MOSFET Transistors - - - - - - - RF MOSFET Transistors - - - -
                    MRF426
                    MRF426

                    Advanced
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Advanced AGR19060EF
                    Mfr. Тип
                    AGR19060EF
                    Anlielectronics Тип

                    		Advanced
                    RF MOSFET Transistors 1.93-1.99GHz 12Watt Gain 15.5dB
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - - YES - - 2 SILICON - Advanced Semiconductor, Inc. - - 10 - AVAGO TECHNOLOGIES INC Advanced Semiconductor, Inc. AGR19060EF - - - 1 200 °C CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, R-CDFM-F2 RECTANGULAR FLANGE MOUNT Active - - 30 5.25 Details - - - - - Tray e0 - EAR99 - - TIN LEAD HIGH RELIABILITY MOSFETs Si DUAL - FLAT 225 compliant - R-CDFM-F2 Not Qualified - - - SINGLE - ENHANCEMENT MODE - - AMPLIFIER N-CHANNEL RF MOSFET Transistors - - 65 V METAL-OXIDE SEMICONDUCTOR 175 W - L BAND RF MOSFET Transistors - - - -
                      AGR19060EF
                      AGR19060EF

                      Advanced
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Advanced AGR21180EF
                      Mfr. Тип
                      AGR21180EF
                      Anlielectronics Тип

                      		Advanced
                      RF MOSFET Transistors 2.11-2.17GHz 38Watt Gain 14dB
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - - YES - - 4 SILICON - Advanced Semiconductor, Inc. - - 10 - AVAGO TECHNOLOGIES INC Advanced Semiconductor, Inc. AGR21180EF - - - 1 150 °C CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, R-CDFM-F4 RECTANGULAR FLANGE MOUNT Active - - 30 5.25 Details - - - - - Tray e0 - EAR99 - - TIN LEAD HIGH RELIABILITY MOSFETs Si DUAL - FLAT 225 compliant - R-CDFM-F4 Not Qualified - - - SINGLE - ENHANCEMENT MODE SOURCE - AMPLIFIER N-CHANNEL RF MOSFET Transistors - - 65 V METAL-OXIDE SEMICONDUCTOR 500 W - S BAND RF MOSFET Transistors - - - -
                        AGR21180EF
                        AGR21180EF

                        Advanced
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Advanced MRF151GC
                        Mfr. Тип
                        MRF151GC
                        Anlielectronics Тип

                        		Advanced
                        RF MOSFET Transistors RF Transistor
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - SOT-262A - - - - - - Advanced Semiconductor, Inc. - - - 40 A - Advanced Semiconductor, Inc. - + 200 C - 65 C SMD/SMT - - - - - - - 500 W - - - Details N-Channel 0.001058 oz 125 V 40 V 5 V Tray - - - RF Power MOSFET - - - MOSFETs Si - - - - - - - - 175 MHz - - Dual - - - - - - RF MOSFET Transistors - - - - - - - RF MOSFET Transistors - - - -
                          MRF151GC
                          MRF151GC

                          Advanced
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Advanced AGR09070EF
                          Mfr. Тип
                          AGR09070EF
                          Anlielectronics Тип

                          		Advanced
                          RF MOSFET Transistors 921-960MHz 70Watt Gain @ P1dB 18.25dB
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - YES - - 2 SILICON - Advanced Semiconductor, Inc. - 8.5 A 10 - BROADCOM LTD Advanced Semiconductor, Inc. AGR09070EF - - - 1 200 °C CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, R-CDFM-F2 RECTANGULAR FLANGE MOUNT Active - - 30 5.31 Details - - - - - Tray e0 - EAR99 - - TIN LEAD HIGH RELIABILITY MOSFETs Si DUAL - FLAT 225 compliant - R-CDFM-F2 Not Qualified - - - SINGLE - ENHANCEMENT MODE SOURCE - AMPLIFIER N-CHANNEL RF MOSFET Transistors - 8.5 A 65 V METAL-OXIDE SEMICONDUCTOR 265 W - ULTRA HIGH FREQUENCY BAND RF MOSFET Transistors - - - -
                            AGR09070EF
                            AGR09070EF

                            Advanced
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Advanced AGR21030EF
                            Mfr. Тип
                            AGR21030EF
                            Anlielectronics Тип

                            		Advanced
                            RF MOSFET Transistors 2.11-2.17GHz 7Watt Gain 14.5dB
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - - YES - - 2 SILICON - Advanced Semiconductor, Inc. - - 10 - BROADCOM LTD Advanced Semiconductor, Inc. AGR21030EF - - - 1 200 °C CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, R-CDFM-F2 RECTANGULAR FLANGE MOUNT Active - - 30 5.31 Details - - - - - Tray e0 - EAR99 - - TIN LEAD HIGH RELIABILITY MOSFETs Si DUAL - FLAT 225 compliant - R-CDFM-F2 Not Qualified - - - SINGLE - ENHANCEMENT MODE SOURCE - AMPLIFIER N-CHANNEL RF MOSFET Transistors - - 65 V METAL-OXIDE SEMICONDUCTOR 87.5 W - S BAND RF MOSFET Transistors - - - -
                              AGR21030EF
                              AGR21030EF

                              Advanced
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Advanced MRF157
                              Mfr. Тип
                              MRF157
                              Anlielectronics Тип

                              		Advanced
                              RF MOSFET Transistors RF Transistor
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 - - - - - - - - Advanced Semiconductor, Inc. - - - - - Advanced Semiconductor, Inc. - - - - - - - - - - - - - - - Details - - - - - Tray - - - RF Power MOSFET - - - MOSFETs Si - - - - - - - - - - - - - - - - - - RF MOSFET Transistors - - - - - - - RF MOSFET Transistors - - - -
                                MRF157
                                MRF157

                                Advanced
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Advanced BLF177
                                Mfr. Тип
                                BLF177
                                Anlielectronics Тип

                                		Advanced
                                RF MOSFET Transistors RF Transistor
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - - - - - - - Advanced Semiconductor, Inc. - - 1 16 A - Advanced Semiconductor, Inc. - + 200 C - 65 C Flange Mount - - - - - - - - 300 mOhms - - Details N-Channel 0.436099 oz 110 V - - Tray - - - - - - - MOSFETs Si - - - - - - - - - - - - - - - - - - RF MOSFET Transistors - - - - - - - RF MOSFET Transistors - - - -
                                  BLF177
                                  BLF177

                                  Advanced
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Advanced MRF492
                                  Mfr. Тип
                                  MRF492
                                  Anlielectronics Тип

                                  		Advanced
                                  RF MOSFET Transistors RF Transistor
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - - - - - - - - Advanced Semiconductor, Inc. - - 1 - - Advanced Semiconductor, Inc. - - - - - - - - - - - - - - - Details - - - - - Tray - - - - - - - MOSFETs Si - - - - - - - - - - - - - - - - - - RF MOSFET Transistors - - - - - - - RF MOSFET Transistors - - - -
                                    MRF492
                                    MRF492

                                    Advanced
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Advanced MRF151GB
                                    Mfr. Тип
                                    MRF151GB
                                    Anlielectronics Тип

                                    		Advanced
                                    RF MOSFET Transistors RF Transistor
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - SOT-262A - - - - - - Advanced Semiconductor, Inc. - - - 40 A - Advanced Semiconductor, Inc. - + 200 C - 65 C SMD/SMT - - - - - - - 500 W - - - Details N-Channel 0.001058 oz 125 V 40 V 5 V Tray - - - RF Power MOSFET - - - MOSFETs Si - - - - - - - - 175 MHz - - Dual - - - - - - RF MOSFET Transistors - - - - - - - RF MOSFET Transistors - - - -
                                      MRF151GB
                                      MRF151GB

                                      Advanced
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Advanced AGR09180EF
                                      Mfr. Тип
                                      AGR09180EF
                                      Anlielectronics Тип

                                      		Advanced
                                      RF MOSFET Transistors 865-895MHz 38Watt Gain 18.25dB
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - - YES - - 4 SILICON - Advanced Semiconductor, Inc. - - 10 - AVAGO TECHNOLOGIES INC Advanced Semiconductor, Inc. AGR09180EF - - - 2 150 °C CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, R-CDFM-F4 RECTANGULAR FLANGE MOUNT Active - - 30 5.25 Details - - - - - Tray e0 - EAR99 - - TIN LEAD HIGH RELIABILITY MOSFETs Si DUAL - FLAT 225 compliant - R-CDFM-F4 Not Qualified - - - COMMON SOURCE, 2 ELEMENTS - ENHANCEMENT MODE SOURCE - AMPLIFIER N-CHANNEL RF MOSFET Transistors - - 65 V METAL-OXIDE SEMICONDUCTOR 500 W - ULTRA HIGH FREQUENCY BAND RF MOSFET Transistors - - - -
                                        AGR09180EF
                                        AGR09180EF

                                        Advanced
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Advanced AGR26180EF
                                        Mfr. Тип
                                        AGR26180EF
                                        Anlielectronics Тип

                                        		Advanced
                                        RF MOSFET Transistors 2.535-2.655GHz27Watt Gain 12.5dB
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 - - YES - - 4 SILICON - - - - - - BROADCOM LTD Broadcom Limited AGR26180EF - - - 1 200 °C CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, R-CDFM-F4 RECTANGULAR FLANGE MOUNT Active - - 30 5.31 - - - - - - - e0 - EAR99 - - TIN LEAD HIGH RELIABILITY FET General Purpose Power - DUAL - FLAT 225 compliant - R-CDFM-F4 Not Qualified - - - SINGLE - ENHANCEMENT MODE SOURCE - - N-CHANNEL - - - 65 V METAL-OXIDE SEMICONDUCTOR 500 W - ULTRA HIGH FREQUENCY BAND - - - - -
                                          AGR26180EF
                                          AGR26180EF

                                          Advanced
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - RF definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - RF Product Listing: AGR19180EF,AGR09045EF,AGR18125EF,MRF151G,MRF172.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - RF has 50 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.