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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Transistor Element Material | Mfr | Number of Elements | Operating Temperature (Max.) | Package | Product Status | Voltage Rated | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Current Rating (Amps) | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Frequency | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Current - Test | Transistor Application | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Transistor Type | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Gain | Max Output Power | Drain Current-Max (Abs) (ID) | Drain to Source Breakdown Voltage | DS Breakdown Voltage-Min | Power - Output | FET Technology | Voltage - Test | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипPTFA041501GL V1Anlielectronics Тип | Infineon Technologies |
IC FET RF LDMOS 150W PG-63248-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 2-Flatpack, Fin Leads | YES | - | - | SILICON | - | 1 | 150°C | - | - | 65V | Tray | 2008 | - | - | - | Obsolete | 3 (168 Hours) | 2 | EAR99 | - | - | - | HIGH RELIABILITY | - | 1μA | - | DUAL | - | NOT SPECIFIED | unknown | - | 470MHz | NOT SPECIFIED | PTFA041501 | 2 | - | R-PDFM-F2 | - | SINGLE | - | ENHANCEMENT MODE | - | SOURCE | 900mA | AMPLIFIER | - | N-CHANNEL | LDMOS | - | - | 21dB | - | - | - | 65V | 150W | METAL-OXIDE SEMICONDUCTOR | 28V | RoHS Compliant | ||
| PTFA041501GL V1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPTFA041501HL V1Anlielectronics Тип | Infineon Technologies |
IC FET RF LDMOS 150W PG-64248-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 2-Flatpack, Fin Leads, Flanged | YES | - | - | SILICON | - | 1 | 150°C | - | - | 65V | Tray | 2008 | - | - | - | Obsolete | 3 (168 Hours) | 2 | EAR99 | - | - | - | HIGH RELIABILITY | - | 1μA | - | DUAL | - | NOT SPECIFIED | unknown | - | 470MHz | NOT SPECIFIED | PTFA041501 | 2 | - | R-PDFP-F2 | - | SINGLE | - | ENHANCEMENT MODE | - | SOURCE | 900mA | AMPLIFIER | - | N-CHANNEL | LDMOS | - | - | 21dB | - | - | - | 65V | 150W | METAL-OXIDE SEMICONDUCTOR | 28V | RoHS Compliant | ||
| PTFA041501HL V1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRF6S21100NR1Anlielectronics Тип | NXP USA Inc. |
FET RF 68V 2.16GHZ TO270-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | TO-270AB | - | - | - | - | - | - | - | - | - | 68V | Tape & Reel (TR) | 2007 | - | - | - | Obsolete | 3 (168 Hours) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2.11GHz~2.16GHz | - | MRF6S21100 | - | - | - | - | - | - | - | - | - | 1.05A | - | - | - | LDMOS | - | - | 14.5dB | - | - | - | - | 23W | - | 28V | ROHS3 Compliant | ||
| MRF6S21100NR1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPTF210451E V1Anlielectronics Тип | Infineon Technologies |
IC FET RF LDMOS 45W H-30265-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 2-Flatpack, Fin Leads | - | - | H-30265-2 | - | - | - | - | - | - | 65V | Tray | 2008 | GOLDMOS® | - | - | Obsolete | 3 (168 Hours) | - | - | - | - | - | - | - | 1μA | - | - | - | - | - | - | 2.17GHz | - | - | - | - | - | - | - | - | - | - | - | 500mA | - | - | - | LDMOS | - | - | 14dB | - | - | - | - | 45W | - | 28V | - | ||
| PTF210451E V1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAFT18P350-4S2LR6Anlielectronics Тип | NXP USA Inc. |
FET RF 2CH 65V 1.81GHZ NI1230
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | NI-1230-4LS2L | - | - | - | - | - | - | 150°C | - | - | 65V | Tape & Reel (TR) | 2006 | - | - | - | Active | Not Applicable | - | EAR99 | - | - | - | - | - | - | - | - | - | 260 | - | - | 1.81GHz | 40 | - | - | - | - | - | Single | - | - | - | - | 1A | - | - | N-CHANNEL | LDMOS (Dual) | - | - | 16.1dB | - | - | - | - | 63W | METAL-OXIDE SEMICONDUCTOR | 28V | ROHS3 Compliant | ||
| AFT18P350-4S2LR6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипCGH40045FAnlielectronics Тип | Cree/Wolfspeed |
RF MOSFET HEMT 28V 440193
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | 440193 | - | - | 440193 | - | - | - | - | - | - | 84V | Tray | 2016 | GaN | - | - | Not For New Designs | 1 (Unlimited) | - | - | - | - | - | - | - | 14A | - | - | - | - | - | 14A | 0Hz~4GHz | - | CGH40* | - | - | - | - | - | - | - | - | - | 400mA | - | - | - | HEMT | - | - | 14dB | - | - | - | - | 55W | - | 28V | RoHS Compliant | ||
| CGH40045F | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRF8S9260HSR3Anlielectronics Тип | NXP USA Inc. |
Trans RF MOSFET N-CH 70V 3-Pin Case 465C-02 T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | NI-880S | YES | - | - | SILICON | - | 1 | 225°C | - | - | 70V | Tape & Reel (TR) | 2006 | - | - | - | Obsolete | Not Applicable | 2 | EAR99 | - | - | - | - | 8541.29.00.75 | - | - | DUAL | FLAT | - | - | - | 960MHz | - | MRF8S9260 | - | - | R-CDFP-F2 | Not Qualified | SINGLE | - | ENHANCEMENT MODE | - | SOURCE | 1.7A | AMPLIFIER | - | N-CHANNEL | LDMOS | - | - | 18.6dB | - | - | - | 70V | 75W | METAL-OXIDE SEMICONDUCTOR | 28V | ROHS3 Compliant | ||
| MRF8S9260HSR3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRF6VP2600HR6Anlielectronics Тип | NXP USA Inc. |
Trans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NI-1230 | - | - | - | - | - | - | - | - | - | 110V | Tape & Reel (TR) | 2010 | - | - | - | Obsolete | 1 (Unlimited) | - | EAR99 | - | - | - | - | 8541.29.00.75 | - | - | - | - | - | - | - | 225MHz | - | MRF6VP2600 | - | - | - | - | - | - | - | - | - | 2.6A | - | - | - | LDMOS (Dual) | - | - | 25dB | - | - | - | - | 125W | - | 50V | ROHS3 Compliant | ||
| MRF6VP2600HR6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPTFA082201F V1Anlielectronics Тип | Infineon Technologies |
IC FET RF LDMOS 220W H-37260-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 2-Flatpack, Fin Leads, Flanged | - | - | - | - | - | - | - | - | - | 65V | Tray | 2009 | - | - | - | Discontinued | 3 (168 Hours) | - | - | - | - | - | - | - | 10μA | - | - | - | - | - | - | 894MHz | - | PTFA082201 | - | - | - | - | - | - | - | - | - | 1.95A | - | - | - | LDMOS | - | - | 18dB | - | - | - | - | 220W | - | 30V | ROHS3 Compliant | ||
| PTFA082201F V1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPD84008-EAnlielectronics Тип | STMicroelectronics |
FET RF 25V 870MHZ
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | - | 4 | - | - | - | 1 | - | - | - | - | Tube | - | - | - | - | Obsolete | 3 (168 Hours) | 2 | EAR99 | - | 165°C | -65°C | HIGH RELIABILITY | - | - | 79W | DUAL | GULL WING | NOT SPECIFIED | - | 7A | 870MHz | NOT SPECIFIED | PD84008 | 10 | - | R-PDSO-G2 | Not Qualified | - | Single | ENHANCEMENT MODE | 79W | SOURCE | 250mA | AMPLIFIER | 25V | N-CHANNEL | LDMOS | 7A | 15V | 16.2dB | 8W | 7A | 25V | - | 2W | METAL-OXIDE SEMICONDUCTOR | 7.5V | ROHS3 Compliant | ||
| PD84008-E | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBLF574,112Anlielectronics Тип | Ampleon USA Inc. |
RF FET LDMOS 110V 26.5DB SOT539A
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | - | SOT539A | - | - | SOT539A | - | - | - | - | - | - | 110V | Tray | 2009 | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | 56A | - | - | - | - | - | - | 225MHz | - | - | - | - | - | - | - | - | - | - | - | 1A | - | - | - | LDMOS (Dual), Common Source | - | - | 26.5dB | - | - | - | - | 400W | - | 50V | ROHS3 Compliant | ||
| BLF574,112 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAFV121KHR5Anlielectronics Тип | NXP USA Inc. |
BROADBAND RF POWER LDMOS TRANSISTOR, 960-1215 MH , 1000 W PEAK, 50 V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | SOT-979A | YES | - | - | SILICON | - | 2 | - | - | - | 112V | Tape & Reel (TR) | 2015 | - | - | - | Active | Not Applicable | 4 | EAR99 | - | - | - | - | 8541.29.00.75 | - | - | - | FLAT | NOT SPECIFIED | - | - | 960MHz~1.22GHz | NOT SPECIFIED | - | - | - | R-CDFM-F4 | - | COMMON SOURCE, 2 ELEMENTS | - | ENHANCEMENT MODE | - | SOURCE | 100mA | AMPLIFIER | - | N-CHANNEL | LDMOS (Dual) | - | - | 19.6dB | - | - | - | 112V | 1000W | METAL-OXIDE SEMICONDUCTOR | 50V | ROHS3 Compliant | ||
| AFV121KHR5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипA2I08H040NR1Anlielectronics Тип | NXP USA Inc. |
RF Amplifier BL RF
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | TO-270-15 Variant, Flat Leads | - | - | - | - | - | - | - | - | - | 65V | Tape & Reel (TR) | 2006 | - | - | yes | Active | 3 (168 Hours) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 920MHz | - | - | - | - | - | - | - | - | - | - | - | 25mA | - | - | - | LDMOS (Dual) | - | - | 30.7dB | - | - | - | - | 9W | - | 28V | ROHS3 Compliant | ||
| A2I08H040NR1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRF8S21200HSR5Anlielectronics Тип | NXP USA Inc. |
Trans RF MOSFET N-CH 65V 5-Pin NI-1230S T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NI-1230S | - | - | - | - | - | - | - | - | - | 65V | Tape & Reel (TR) | 2010 | - | - | - | Discontinued | 3 (168 Hours) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2.14GHz | - | MRF8S21200 | - | - | - | - | - | - | - | - | - | 1.4A | - | - | - | LDMOS (Dual) | - | - | 18.1dB | - | - | - | - | 48W | - | 28V | ROHS3 Compliant | ||
| MRF8S21200HSR5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMMRF1021NT1Anlielectronics Тип | NXP USA Inc. |
RF MOSFET Transistors 136-941MHz 7 W 7.5 V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | PLD-1.5W | - | - | - | - | - | - | - | - | - | 30V | Tape & Reel (TR) | 2012 | - | e3 | - | Obsolete | 3 (168 Hours) | - | EAR99 | TIN | - | - | - | 8541.29.00.75 | - | - | - | - | 260 | - | - | 870MHz | 40 | - | - | - | - | - | - | - | - | - | - | 100mA | - | - | - | LDMOS | - | - | 15.2dB | - | - | - | - | 7.3W | - | 7.5V | ROHS3 Compliant | ||
| MMRF1021NT1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBLS6G2731-120,112Anlielectronics Тип | Ampleon USA Inc. |
RF FET LDMOS 60V 13.5DB SOT502A
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | - | SOT-502A | YES | - | - | SILICON | - | 1 | - | - | - | 60V | Tray | 2008 | - | - | - | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | - | - | - | - | - | 33A | - | DUAL | FLAT | NOT SPECIFIED | unknown | - | 2.7GHz~3.1GHz | NOT SPECIFIED | BLS6G2731 | - | IEC-60134 | R-CDFM-F2 | - | SINGLE | - | ENHANCEMENT MODE | - | SOURCE | 100mA | AMPLIFIER | - | N-CHANNEL | LDMOS | - | - | 13.5dB | - | 33A | - | 60V | 120W | METAL-OXIDE SEMICONDUCTOR | 32V | ROHS3 Compliant | ||
| BLS6G2731-120,112 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFAE32Anlielectronics Тип | International Rectifier |
N-CHANNEL HERMETIC MOS HEXFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | International Rectifier | - | - | Bulk | Active | - | - | - | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRFAE32 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMRF6S19100NR1Anlielectronics Тип | NXP USA Inc. |
Transistors RF MOSFET Power 1990MHZ 22W
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | TO-270AB | YES | - | - | SILICON | - | 1 | - | - | - | 68V | Tape & Reel (TR) | 2007 | - | e3 | - | Obsolete | 3 (168 Hours) | 4 | EAR99 | Matte Tin (Sn) | - | - | - | 8541.29.00.75 | - | - | DUAL | FLAT | 260 | - | - | 1.99GHz | 40 | MRF6S19100 | - | - | R-PDFP-F4 | Not Qualified | SINGLE | - | ENHANCEMENT MODE | - | SOURCE | 950mA | AMPLIFIER | - | N-CHANNEL | LDMOS | - | - | 14.5dB | - | - | - | 68V | 22W | METAL-OXIDE SEMICONDUCTOR | 28V | ROHS3 Compliant | ||
| MRF6S19100NR1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPTFA080551E V1Anlielectronics Тип | Infineon Technologies |
IC FET RF LDMOS 55W H-36265-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | H-36265-2 | - | - | - | - | - | - | - | - | - | 65V | Tray | 2006 | - | - | - | Discontinued | 3 (168 Hours) | - | - | - | - | - | - | - | 10μA | - | - | - | - | - | - | 960MHz | - | PTFA080551 | - | - | - | - | - | - | - | - | - | 600mA | - | - | - | LDMOS | - | - | 18.5dB | - | - | - | - | 55W | - | 28V | ROHS3 Compliant | ||
| PTFA080551E V1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRF8P20165WHR3Anlielectronics Тип | NXP USA Inc. |
RF MOSFET Transistors HV8 2GHZ 165W NI780-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | NI780-4 | YES | - | - | SILICON | - | 2 | 125°C | - | - | 65V | Tape & Reel (TR) | 2006 | - | - | - | Not For New Designs | Not Applicable | 4 | EAR99 | - | - | - | - | 8541.29.00.75 | - | - | - | FLAT | 260 | - | - | 1.98GHz~2.01GHz | 40 | MRF8P20165 | - | - | R-CDFM-F4 | Not Qualified | COMMON SOURCE, 2 ELEMENTS | - | ENHANCEMENT MODE | - | SOURCE | 550mA | AMPLIFIER | - | N-CHANNEL | LDMOS (Dual) | - | - | 14.8dB | - | - | - | 65V | 37W | METAL-OXIDE SEMICONDUCTOR | 28V | ROHS3 Compliant | ||
| MRF8P20165WHR3 |
Индекс :
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