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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Transistor Element Material | Frequency(Max) | Number of Elements | Operating Temperature (Max.) | Usage Level | Voltage Rated | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Voltage - Rated DC | Current Rating (Amps) | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Frequency | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Configuration | Element Configuration | Operating Mode | Case Connection | Current - Test | Transistor Application | Halogen Free | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Transistor Type | Continuous Drain Current (ID) | JEDEC-95 Code | Gate to Source Voltage (Vgs) | Gain | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | RF/Microwave Device Type | Drain to Source Breakdown Voltage | DS Breakdown Voltage-Min | Power - Output | FET Technology | Noise Figure | Voltage - Test | Feedback Cap-Max (Crss) | Source Url Status Check Date | RoHS Status | Lead Free |
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  | Mfr. ТипNPTB00025BAnlielectronics Тип | M/A-Com Technology Solutions |
HEMT N-CH 28V 25W DC-4000MHZ
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | - | - | - | - | - | - | - | - | - | Military grade | 100V | Tray | 2013 | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | - | - | - | NOT SPECIFIED | - | 5.4A | 0Hz~4GHz | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | 225mA | - | - | - | - | HEMT | - | - | - | 13.5dB | - | - | - | - | - | - | - | - | 28V | - | - | ROHS3 Compliant | - | ||
| NPTB00025B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBS170RLRMAnlielectronics Тип | Rochester Electronics, LLC |
SMALL SIGNAL N-CHANNEL MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | NO | - | - | SILICON | - | 1 | - | - | - | - | - | e0 | no | Obsolete | 1 (Unlimited) | 3 | - | TIN LEAD | - | - | - | - | - | - | - | BOTTOM | THROUGH-HOLE | 240 | - | - | - | 30 | - | 3 | O-PBCY-T3 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | - | - | N-CHANNEL | - | - | TO-226AA | - | - | 0.5A | 5Ohm | - | - | 60V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | Non-RoHS Compliant | - | ||
| BS170RLRM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPTFA220121MV4XUMA1Anlielectronics Тип | Infineon |
Trans RF MOSFET N-CH 65V 10-Pin SON EP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks | Surface Mount | - | - | 10 | - | - | 2.2GHz | 1 | - | - | 65V | Tape & Reel (TR) | 2011 | e4 | yes | Active | 3 (168 Hours) | 10 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 175°C | -40°C | - | - | - | - | - | DUAL | NO LEAD | NOT SPECIFIED | - | - | 2.14GHz | NOT SPECIFIED | - | 10 | - | Not Qualified | 28V | SINGLE | - | ENHANCEMENT MODE | SOURCE | 150mA | AMPLIFIER | Halogen Free | - | N-CHANNEL | - | - | - | 12V | 16 dB | - | - | - | - | - | 9.3W | METAL-OXIDE SEMICONDUCTOR | - | 28V | - | - | RoHS Compliant | Lead Free | ||
| PTFA220121MV4XUMA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRF6V2300NR5Anlielectronics Тип | NXP USA Inc. |
RF MOSFET Transistors VHV6 300W TO270WB4N
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | TO-270AB | - | - | - | - | - | - | 225°C | - | 110V | Tape & Reel (TR) | 2006 | e3 | - | Obsolete | 3 (168 Hours) | - | EAR99 | Tin (Sn) | - | - | - | 8541.29.00.75 | - | - | - | - | - | 260 | not_compliant | - | 220MHz | 40 | MRF6V2300 | - | - | - | - | Single | - | - | - | 900mA | - | - | - | N-CHANNEL | LDMOS | - | - | - | 25.5dB | - | - | - | - | - | 300W | METAL-OXIDE SEMICONDUCTOR | - | 50V | - | - | ROHS3 Compliant | - | ||
| MRF6V2300NR5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипA2G22S160-01SR3Anlielectronics Тип | NXP USA Inc. |
AIRFAST RF Power GaN Transistor, 1800-2200 MHz, 32 W AVG., 48 V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | NI-400S-2S | - | - | - | - | - | - | - | - | 125V | Tape & Reel (TR) | 2006 | - | - | Active | Not Applicable | - | EAR99 | - | - | - | - | 8541.29.00.75 | - | - | - | - | - | NOT SPECIFIED | - | - | 2.11GHz | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | 150mA | - | - | - | - | - | - | - | - | 19.6dB | - | - | - | - | - | 32W | - | - | 48V | - | - | ROHS3 Compliant | - | ||
| A2G22S160-01SR3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRF6S19100HR3Anlielectronics Тип | NXP USA Inc. |
Trans RF MOSFET N-CH 68V 3-Pin NI-780 T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | SOT-957A | - | - | NI-780H-2L | - | - | - | - | - | 68V | Tape & Reel (TR) | 2009 | - | - | Obsolete | 3 (168 Hours) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.99GHz | - | MRF6S19100 | - | - | - | - | - | - | - | - | 900mA | - | - | - | - | LDMOS | - | - | - | 16.1dB | - | - | - | - | - | 22W | - | - | 28V | - | - | ROHS3 Compliant | - | ||
| MRF6S19100HR3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBLC9G20LS-120VYAnlielectronics Тип | Ampleon USA Inc. |
RF FET LDMOS 65V 19.2DB SOT12753
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | - | SOT1275-3 | - | - | DFM6 | - | - | - | - | - | 65V | Cut Tape (CT) | 2010 | - | - | Active | 3 (168 Hours) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.81GHz~1.88GHz | - | - | - | - | - | - | - | - | - | - | 700mA | - | - | - | - | LDMOS | - | - | - | 19.2dB | - | - | - | - | - | 120W | - | - | 28V | - | - | ROHS3 Compliant | - | ||
| BLC9G20LS-120VY | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPTFA190451EV4R250XTMA1Anlielectronics Тип | Infineon Technologies |
Trans MOSFET N-CH 65V 3-Pin 36265 T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | H-36265-2 | - | 3 | H-36265-2 | - | - | - | - | - | 65V | Tape & Reel (TR) | 2009 | - | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | - | - | - | 10μA | - | - | - | - | - | 10μA | 1.96GHz | - | PTFA190451 | - | - | - | - | - | - | - | - | 450mA | - | - | - | - | LDMOS | - | - | - | 17.5dB | - | - | - | - | - | 11W | - | - | 28V | - | - | RoHS Compliant | - | ||
| PTFA190451EV4R250XTMA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPTFC210202FCV1XWSA1Anlielectronics Тип | Infineon Technologies |
Trans MOSFET N-CH 65(Min)V 4-Pin H-37248 Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | H-37248-4 | - | 4 | - | - | - | - | - | - | 65V | Tray | 2014 | - | - | Discontinued | 1 (Unlimited) | - | EAR99 | - | 200°C | -65°C | - | - | - | - | - | - | - | NOT SPECIFIED | - | - | 2.2GHz | NOT SPECIFIED | - | - | - | - | 28V | - | - | - | - | 170mA | - | Halogen Free | - | - | LDMOS (Dual) | - | - | 10V | 21dB | - | - | - | - | - | 5W | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| PTFC210202FCV1XWSA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBF2030RE6814HTSA1Anlielectronics Тип | Infineon Technologies |
Trans RF MOSFET N-CH 8V 0.04A Automotive 4-Pin(3 Tab) SOT-143R T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | SOT-143R | - | 4 | - | - | - | 1 | - | - | 8V | Tape & Reel (TR) | 2007 | - | - | Obsolete | 1 (Unlimited) | 4 | EAR99 | - | 150°C | -55°C | LOW NOISE | - | - | - | 200mW | DUAL | GULL WING | NOT SPECIFIED | - | 40mA | 800MHz | NOT SPECIFIED | BF2030 | - | - | - | - | SINGLE | - | DUAL GATE, DEPLETION MODE | SOURCE | 10mA | AMPLIFIER | - | - | - | N-Channel | 40mA | - | - | 23dB | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 1.5dB | 5V | - | - | RoHS Compliant | - | ||
| BF2030RE6814HTSA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBLF6G20LS-75,112Anlielectronics Тип | Ampleon USA Inc. |
RF FET LDMOS 65V 19DB SOT502B
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | SOT-502B | - | - | SOT502B | - | - | - | - | - | 65V | Tray | 2009 | - | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | - | - | - | 18A | - | - | - | - | - | - | 1.93GHz~1.99GHz | - | BLF6G20 | - | - | - | - | - | - | - | - | 550mA | - | - | - | - | LDMOS | - | - | - | 19dB | - | - | - | - | - | 29.5W | - | - | 28V | - | - | Non-RoHS Compliant | - | ||
| BLF6G20LS-75,112 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBG3123E6327HTSA1Anlielectronics Тип | Infineon Technologies |
Trans RF MOSFET N-CH 8V 0.025A 6-Pin SOT-363 T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 6-VSSOP, SC-88, SOT-363 | - | 6 | PG-SOT363-6 | - | - | 2 | - | - | 8V | Tape & Reel (TR) | 2007 | - | - | Obsolete | 1 (Unlimited) | - | - | - | 150°C | -55°C | - | - | - | 25mA 20mA | 200mW | - | - | - | - | 20mA | 800MHz | - | BG3123 | - | - | - | - | - | - | - | - | 14mA | - | - | - | - | 2 N-Channel (Dual) | 25mA | - | - | 25dB | - | - | - | - | - | - | - | 1.8dB | 5V | - | - | RoHS Compliant | - | ||
| BG3123E6327HTSA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMRF19085LR3Anlielectronics Тип | NXP USA Inc. |
FET RF 65V 1.99GHZ NI-780
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | SOT-957A | - | - | - | - | - | - | - | - | 65V | Tape & Reel (TR) | 2008 | - | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | - | - | - | NOT SPECIFIED | - | - | 1.93GHz~1.99GHz | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | 850mA | - | - | - | - | LDMOS | - | - | - | 13dB | - | - | - | - | - | 18W | - | - | 26V | - | - | ROHS3 Compliant | - | ||
| MRF19085LR3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBF1105,215Anlielectronics Тип | NXP USA Inc. |
MOSFET N-CH 7V DUAL SOT143
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | TO-253-4, TO-253AA | - | - | - | - | - | - | - | - | 7V | Tape & Reel (TR) | 1997 | - | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | - | - | - | 30mA | - | - | - | - | - | - | 800MHz | - | BF1105 | 4 | - | - | - | - | - | - | - | - | - | - | - | - | N-Channel Dual Gate | - | - | - | 20dB | - | - | - | - | - | - | - | 1.7dB | 5V | - | 2013-06-14 00:00:00 | ROHS3 Compliant | - | ||
| BF1105,215 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMMRF2010NR1Anlielectronics Тип | NXP USA Inc. |
A RF LDMOS W I P A , 978-1090 MH , 250 W P , 50 V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | TO-270-14 Variant, Flat Leads | - | - | - | - | - | - | - | - | 100V | Tape & Reel (TR) | 2010 | - | yes | Active | 3 (168 Hours) | - | - | - | - | - | - | - | - | 10μA | - | - | - | - | - | - | 1.09GHz | - | - | - | - | - | - | - | - | - | - | 80mA | - | - | - | - | LDMOS | - | - | - | 32.1dB | - | - | NARROW BAND HIGH POWER | - | - | 250W | - | - | 50V | - | - | ROHS3 Compliant | - | ||
| MMRF2010NR1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPD55025TR-EAnlielectronics Тип | STMicroelectronics |
TRANS RF N-CH FET POWERSO-10RF
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 25 Weeks | Surface Mount | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | - | 3 | - | - | - | 1 | - | - | 40V | Tape & Reel (TR) | - | - | - | Active | 3 (168 Hours) | 2 | EAR99 | - | 150°C | -65°C | HIGH RELIABILITY | - | - | - | 79W | DUAL | GULL WING | NOT SPECIFIED | - | 7A | 500MHz | NOT SPECIFIED | PD55025 | 10 | R-PDSO-G2 | Not Qualified | - | SINGLE | - | ENHANCEMENT MODE | SOURCE | 200mA | AMPLIFIER | - | - | N-CHANNEL | LDMOS | 7A | - | 20V | 14.5dB | 7A | - | - | - | 40V | 25W | METAL-OXIDE SEMICONDUCTOR | - | 12.5V | - | - | ROHS3 Compliant | - | ||
| PD55025TR-E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAFT26HW050SR3Anlielectronics Тип | NXP USA Inc. |
FET RF 2CH 65V 2.69GHZ NI780-4S4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | NI-780-4S4 | - | - | - | - | - | - | 150°C | - | 65V | Tape & Reel (TR) | 2006 | - | - | Not For New Designs | Not Applicable | - | EAR99 | - | - | - | - | 8541.29.00.40 | - | - | - | - | - | 260 | - | - | 2.69GHz | 40 | - | - | - | - | - | Single | - | - | - | 100mA | - | - | - | N-CHANNEL | LDMOS (Dual) | - | - | - | 14.2dB | - | - | - | - | - | 9W | METAL-OXIDE SEMICONDUCTOR | - | 28V | - | - | ROHS3 Compliant | - | ||
| AFT26HW050SR3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипJ310RLRPAnlielectronics Тип | ON Semiconductor |
Trans JFET N-CH 25V 3-Pin TO-92 Tape and Ammo
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | NO | 3 | - | - | - | 1 | - | - | - | Tape & Reel (TR) | 2006 | e0 | - | Obsolete | 1 (Unlimited) | 3 | - | Tin/Lead (Sn/Pb) | 125°C | -65°C | - | 8541.21.00.75 | 25V | - | - | BOTTOM | THROUGH-HOLE | 240 | not_compliant | 60mA | 100MHz | 30 | J310 | 3 | - | Not Qualified | - | - | Single | DEPLETION MODE | - | 10mA | AMPLIFIER | - | 25V | - | N-Channel JFET | 70mA | - | 25V | 16dB | - | - | - | 25V | - | - | JUNCTION | - | 10V | 2.5 pF | - | Non-RoHS Compliant | Contains Lead | ||
| J310RLRP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRF8P20165WHSR5Anlielectronics Тип | NXP USA Inc. |
Transistors RF MOSFET Power HV8 2GHZ 165W NI780S-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NI-780S-4 | - | - | NI-780S-4 | - | - | - | - | - | 65V | Tape & Reel (TR) | 2006 | - | - | Discontinued | 3 (168 Hours) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.98GHz~2.01GHz | - | MRF8P20165 | - | - | - | - | - | - | - | - | 550mA | - | - | - | - | LDMOS (Dual) | - | - | - | 14.8dB | - | - | - | - | - | 37W | - | - | 28V | - | - | ROHS3 Compliant | - | ||
| MRF8P20165WHSR5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRFG35002N6AT1Anlielectronics Тип | NXP USA Inc. |
RF JFET Transistors 1.5W 6V GAAS FET PLD1.5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | PLD-1.5 | - | - | - | - | - | - | - | - | 8V | Tape & Reel (TR) | 2010 | - | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | - | - | - | NOT SPECIFIED | - | - | 3.55GHz | NOT SPECIFIED | MRFG35002 | - | - | - | - | - | - | - | - | 65mA | - | - | - | - | pHEMT FET | - | - | - | 10dB | - | - | - | - | - | 158mW | - | - | 6V | - | - | ROHS3 Compliant | - | ||
| MRFG35002N6AT1 |
Индекс :
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