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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Number of Pins | Weight | Transistor Element Material | Manufacturer Package Identifier | Current - Continuous Drain (Id) @ 25℃ | Drive Voltage (Max Rds On, Min Rds On) | Number of Elements | Power Dissipation (Max) | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Resistance | Terminal Finish | Additional Feature | Voltage - Rated DC | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Lead Pitch | Configuration | Row Spacing | Number of Channels | Voltage | Element Configuration | Current | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Halogen Free | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Vgs (Max) | Fall Time (Typ) | Continuous Drain Current (ID) | Threshold Voltage | JEDEC-95 Code | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | Avalanche Energy Rating (Eas) | Recovery Time | Max Junction Temperature (Tj) | Nominal Vgs | Feedback Cap-Max (Crss) | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипNDS0610Anlielectronics Тип | ON Semiconductor |
MOSFET P-CH 60V 120MA SOT-23
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | Surface Mount | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3 | 30mg | SILICON | - | 120mA Ta | 4.5V 10V | 1 | 360mW Ta | 10 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | - | e3 | yes | Active | 1 (Unlimited) | 3 | - | EAR99 | 10Ohm | - | - | -60V | DUAL | GULL WING | - | -120mA | - | - | - | - | - | - | - | 1 | - | Single | - | ENHANCEMENT MODE | 360mW | - | 2.5 ns | P-Channel | SWITCHING | 10 Ω @ 500mA, 10V | 3.5V @ 1mA | - | 79pF @ 25V | 2.5nC @ 10V | 6.3ns | 60V | ±20V | 6.3 ns | -120mA | -1.7V | - | 20V | - | - | - | -60V | - | -60V | - | - | 150°C | -1.7 V | 5 pF | 1.11mm | - | 3.05mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| NDS0610 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF3205STRLPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 55V 110A D2PAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | - | SILICON | - | 110A Tc | 10V | 1 | 200W Tc | 50 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2001 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 8MOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 55V | - | GULL WING | 260 | 110A | 30 | - | - | R-PSSO-G2 | - | - | - | 1 | - | Single | - | ENHANCEMENT MODE | 200W | DRAIN | 14 ns | N-Channel | SWITCHING | 8m Ω @ 62A, 10V | 4V @ 250μA | - | 3247pF @ 25V | 146nC @ 10V | 101ns | - | ±20V | 65 ns | 110A | 4V | TO-252 | 20V | - | 75A | - | 55V | - | 55V | 264 mJ | 104 ns | 175°C | 4 V | - | 5.084mm | 10.668mm | 10.54mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRF3205STRLPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFR4104TRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 40V 42A DPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | - | SILICON | - | 42A Tc | 10V | 1 | 140W Tc | 37 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2003 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | - | EAR99 | 5.5MOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 40V | - | GULL WING | 260 | 42A | 30 | - | - | R-PSSO-G2 | - | - | - | - | - | Single | - | ENHANCEMENT MODE | 140W | DRAIN | 17 ns | N-Channel | SWITCHING | 5.5m Ω @ 42A, 10V | 4V @ 250μA | - | 2950pF @ 25V | 89nC @ 10V | 69ns | - | ±20V | 36 ns | 42A | 4V | TO-252AA | 20V | - | - | - | 40V | 480A | - | - | 42 ns | - | - | - | 1.778mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRFR4104TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDN352APAnlielectronics Тип | ON Semiconductor |
ON SEMICONDUCTOR - FDN352AP - MOSFET Transistor, P Channel, -1.3 A, -30 V, 0.18 ohm, -10 V, -2 V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 6 days ago) | Tin | Surface Mount | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3 | - | SILICON | - | 1.3A Ta | 4.5V 10V | 1 | 500mW Ta | 10 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 180MOhm | - | - | -30V | DUAL | GULL WING | - | -1.3A | - | - | - | - | - | - | - | 1 | 30V | Single | 13A | ENHANCEMENT MODE | 500mW | - | 4 ns | P-Channel | SWITCHING | 180m Ω @ 1.3A, 10V | 2.5V @ 250μA | - | 150pF @ 15V | 1.9nC @ 4.5V | 15ns | - | ±25V | 15 ns | -1.3A | -2V | - | 25V | - | - | - | -30V | - | -30V | - | - | 150°C | -2 V | - | 1.22mm | 2.92mm | 1.4mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDN352AP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNDT3055LAnlielectronics Тип | ON Semiconductor |
MOSFET N-CH 60V 4A SOT-223-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | Surface Mount | Surface Mount | TO-261-4, TO-261AA | 4 | - | SILICON | - | 4A Ta | 4.5V 10V | 1 | 3W Ta | 20 ns | -65°C~150°C TJ | Tape & Reel (TR) | 2017 | - | e3 | yes | Active | 1 (Unlimited) | 4 | - | EAR99 | 100mOhm | - | LOGIC LEVEL COMPATIBLE | 60V | DUAL | GULL WING | - | 3.5A | - | - | - | - | - | - | - | - | 40V | Single | 32A | ENHANCEMENT MODE | 3W | DRAIN | 5 ns | N-Channel | SWITCHING | 100m Ω @ 4A, 10V | 2V @ 250μA | - | 345pF @ 25V | 20nC @ 10V | 7.5ns | - | ±20V | 7 ns | 4A | 1.6V | - | 20V | - | - | - | 60V | - | 60V | - | - | - | 1.6 V | - | 1.6mm | 6.5mm | 6.7mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| NDT3055L | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBSS138NH6327XTSA2Anlielectronics Тип | Infineon Technologies |
Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | Surface Mount | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3 | - | SILICON | - | 230mA Ta | 4.5V 10V | 1 | 360mW Ta | 6.7 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | SIPMOS® | e3 | yes | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | - | Matte Tin (Sn) | LOGIC LEVEL COMPATIBLE | - | DUAL | GULL WING | - | - | - | - | 3 | - | - | SINGLE WITH BUILT-IN DIODE | - | - | 50V | - | 2A | ENHANCEMENT MODE | 360mW | - | 2.3 ns | N-Channel | - | 3.5 Ω @ 230mA, 10V | 1.4V @ 26μA | Halogen Free | 41pF @ 25V | 1.4nC @ 10V | 3ns | - | ±20V | 8.2 ns | 230mA | 1V | - | 20V | 60V | - | - | - | - | 60V | - | 14.5 ns | - | 1 V | - | - | - | 3.05mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| BSS138NH6327XTSA2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFR3910TRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 100V 16A DPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | - | SILICON | - | 16A Tc | 10V | 1 | 79W Tc | 37 ns | -55°C~175°C TJ | Tape & Reel (TR) | 1998 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 115mOhm | - | AVALANCHE RATED | 100V | - | GULL WING | 260 | 16A | 30 | - | - | R-PSSO-G2 | - | - | - | - | - | Single | - | ENHANCEMENT MODE | 52W | DRAIN | 6.4 ns | N-Channel | SWITCHING | 115m Ω @ 10A, 10V | 4V @ 250μA | - | 640pF @ 25V | 44nC @ 10V | 27ns | - | ±20V | 25 ns | 16A | 4V | TO-252AA | 20V | - | - | - | 100V | 60A | 100V | - | 190 ns | - | 4 V | - | 2.3876mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRFR3910TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF3710STRLPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 100V 57A D2PAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | - | SILICON | - | 57A Tc | 10V | 1 | 200W Tc | 45 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2009 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 23MOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 100V | - | GULL WING | 260 | 57A | 30 | - | - | R-PSSO-G2 | - | - | - | - | - | Single | - | ENHANCEMENT MODE | 200W | DRAIN | 12 ns | N-Channel | SWITCHING | 23m Ω @ 28A, 10V | 4V @ 250μA | - | 3130pF @ 25V | 130nC @ 10V | 58ns | - | ±20V | 47 ns | 57A | 4V | - | 20V | - | - | - | 100V | - | 100V | 280 mJ | 220 ns | - | 4 V | - | 4.826mm | 10.668mm | 9.65mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRF3710STRLPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDS6675BZAnlielectronics Тип | ON Semiconductor |
ON SEMICONDUCTOR - FDS6675BZ - P CHANNEL MOSFET, -30V, -11A
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 130mg | SILICON | - | 11A Ta | 4.5V 10V | 1 | 2.5W Ta | 120 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e4 | yes | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 21.8MOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | DUAL | GULL WING | - | - | - | FDS6675 | - | - | - | - | - | - | - | Single | - | ENHANCEMENT MODE | 2.5W | - | 3 ns | P-Channel | SWITCHING | 13m Ω @ 11A, 10V | 3V @ 250μA | - | 2470pF @ 15V | 62nC @ 10V | 7.8ns | 30V | ±25V | 60 ns | 11A | -2V | - | 25V | - | - | - | -30V | - | -30V | - | - | - | -2 V | 500 pF | 1.5mm | 5mm | 4mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDS6675BZ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF7404TRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET P-CH 20V 6.7A 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | - | SILICON | - | 6.7A Ta | 2.7V 4.5V | 1 | 2.5W Ta | 100 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | 40mOhm | - | LOGIC LEVEL COMPATIBLE | -20V | DUAL | GULL WING | 260 | -6.7A | 30 | - | - | - | - | - | 6.3 mm | - | - | Single | - | ENHANCEMENT MODE | 2.5W | - | 14 ns | P-Channel | - | 40m Ω @ 3.2A, 4.5V | 700mV @ 250μA | - | 1500pF @ 15V | 50nC @ 4.5V | 32ns | 20V | ±12V | 65 ns | -6.7A | -700mV | - | 12V | - | 5.3A | - | -20V | - | -20V | - | 100 ns | - | -700 mV | - | 1.4986mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRF7404TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDV301NAnlielectronics Тип | ON Semiconductor |
MOSFET N-CH 25V 220MA SOT-23
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 15 hours ago) | Tin | Surface Mount | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3 | - | SILICON | SOT−23 (TO−236) CASE 318−08 ISSUE AR | 220mA Ta | 2.7V 4.5V | 1 | 350mW Ta | 3.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | - | e3 | yes | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 4Ohm | - | LOGIC LEVEL COMPATIBLE | 25V | DUAL | GULL WING | 260 | 220mA | 30 | - | - | - | - | - | - | 1 | 50V | Single | 2A | ENHANCEMENT MODE | 350mW | - | 3.2 ns | N-Channel | SWITCHING | 4 Ω @ 400mA, 4.5V | 1.06V @ 250μA | - | 9.5pF @ 10V | 0.7nC @ 4.5V | 6ns | - | ±8V | 6 ns | 220mA | - | - | 8V | - | - | - | 25V | - | 25V | - | - | 150°C | 850 mV | - | 1.11mm | 2.92mm | 3.05mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDV301N | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDV305NAnlielectronics Тип | ON Semiconductor |
MOSFET N-CH 20V 0.9A SOT-23
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 17 hours ago) | Tin | Surface Mount | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3 | 30mg | SILICON | - | 900mA Ta | 2.5V 4.5V | 1 | 350mW Ta | 8 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 220MOhm | - | - | 20V | DUAL | GULL WING | - | 900mA | - | - | - | - | - | - | - | - | - | Single | - | ENHANCEMENT MODE | 350mW | - | 4.5 ns | N-Channel | SWITCHING | 220m Ω @ 900mA, 4.5V | 1.5V @ 250μA | - | 109pF @ 10V | 1.5nC @ 4.5V | 7ns | - | ±12V | 7 ns | 900mA | 1V | - | 12V | - | 0.9A | - | 20V | - | 20V | - | - | - | - | - | 930μm | 2.92mm | 1.3mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDV305N | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF1405PBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 55V 169A TO-220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Through Hole | Through Hole | TO-220-3 | 3 | - | SILICON | - | 169A Tc | 10V | 1 | 330W Tc | 130 ns | -55°C~175°C TJ | Tube | 2004 | HEXFET® | - | - | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 5.3mOhm | - | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 55V | - | - | - | 169A | - | - | - | - | 2.54mm | - | - | 1 | - | Single | - | ENHANCEMENT MODE | 330W | DRAIN | 13 ns | N-Channel | SWITCHING | 5.3m Ω @ 101A, 10V | 4V @ 250μA | - | 5480pF @ 25V | 260nC @ 10V | 190ns | - | ±20V | 110 ns | 169A | 4V | TO-220AB | 20V | - | 75A | - | 55V | 680A | 55V | 560 mJ | 130 ns | 175°C | 4 V | - | 19.8mm | 10.668mm | 4.826mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRF1405PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF5305STRLPBFAnlielectronics Тип | Infineon Technologies |
Single P-Channel 55 V 60 mOhm 42 nC HEXFET® Power Mosfet - D2PAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | - | SILICON | - | 31A Tc | 10V | 1 | 3.8W Ta 110W Tc | 39 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2005 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | - | EAR99 | 60mOhm | - | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY | -55V | - | GULL WING | 260 | -31A | 30 | - | - | R-PSSO-G2 | - | - | - | 1 | - | Single | - | ENHANCEMENT MODE | 110W | DRAIN | 14 ns | P-Channel | SWITCHING | 60m Ω @ 16A, 10V | 4V @ 250μA | - | 1200pF @ 25V | 63nC @ 10V | 66ns | 55V | ±20V | 63 ns | -31A | -4V | TO-252 | 20V | - | - | - | -55V | - | -55V | 280 mJ | 110 ns | 175°C | -4 V | - | 5.084mm | 10.668mm | 9.65mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRF5305STRLPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDC610PZAnlielectronics Тип | ON Semiconductor |
Trans MOSFET P-CH 30V 4.9A 6-Pin SuperSOT T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | - | 4.9A Ta | 4.5V 10V | 1 | 1.6W Ta | 33 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | - | - | - | DUAL | GULL WING | - | - | - | - | - | - | - | - | - | 1 | - | Single | - | ENHANCEMENT MODE | 1.6W | - | 7 ns | P-Channel | SWITCHING | 42m Ω @ 4.9A, 10V | 3V @ 250μA | - | 1005pF @ 15V | 24nC @ 10V | 4ns | 30V | ±25V | 4 ns | 4.9mA | -2.2V | - | 25V | - | 4.9A | 0.042Ohm | -30V | - | - | - | - | 150°C | - | - | 1.1mm | 3mm | 1.7mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDC610PZ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBSS123W-7-FAnlielectronics Тип | Diodes Incorporated |
MOSFET N-CH 100V 170MA SC70-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | - | Tin | Surface Mount | Surface Mount | SC-70, SOT-323 | 3 | 6.010099mg | SILICON | - | 170mA Ta | 4.5V 10V | 1 | 200mW Ta | 13 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | - | e3 | yes | Active | 1 (Unlimited) | 3 | - | EAR99 | 6Ohm | - | HIGH RELIABILITY, LOW THRESHOLD | 100V | DUAL | GULL WING | 260 | 170mA | 40 | - | 3 | - | - | - | - | 1 | - | Single | - | ENHANCEMENT MODE | 200mW | - | 8 ns | N-Channel | SWITCHING | 6 Ω @ 170mA, 10V | 2V @ 1mA | - | 60pF @ 25V | - | 8ns | - | ±20V | 8 ns | 170mA | - | - | 20V | - | - | - | 100V | - | - | - | - | - | - | 6 pF | 1mm | 2.2mm | 1.35mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| BSS123W-7-F | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFB4110PBFAnlielectronics Тип | Infineon Technologies |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 3.7 Milliohms; ID 180A; TO-220AB; PD 370W
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Through Hole | Through Hole | TO-220-3 | 3 | - | SILICON | - | 120A Tc | 10V | 1 | 370W Tc | 78 ns | -55°C~175°C TJ | Tube | 2008 | HEXFET® | - | - | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | - | - | - | 100V | - | - | - | 180A | - | - | - | - | - | - | - | - | - | Single | - | ENHANCEMENT MODE | 370W | DRAIN | 25 ns | N-Channel | SWITCHING | 4.5m Ω @ 75A, 10V | 4V @ 250μA | - | 9620pF @ 50V | 210nC @ 10V | 67ns | - | ±20V | 88 ns | 180A | 4V | TO-220AB | 20V | - | - | 0.0045Ohm | 100V | 670A | 100V | - | 75 ns | - | 4 V | - | 16.51mm | 10.66mm | 4.826mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRFB4110PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBSS84PH6327XTSA2Anlielectronics Тип | Infineon Technologies |
Trans MOSFET P-CH 60V 0.17A Automotive 3-Pin SOT-23 T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | Tin | Surface Mount | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3 | - | SILICON | - | 170mA Ta | 4.5V 10V | 1 | 360mW Ta | 8.6 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | SIPMOS® | e3 | - | Active | 1 (Unlimited) | 3 | - | EAR99 | 12Ohm | - | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | - | DUAL | GULL WING | - | - | - | - | - | - | - | - | - | 1 | 60V | Single | 17A | ENHANCEMENT MODE | 360mW | - | 6.7 ns | P-Channel | SWITCHING | 8 Ω @ 170mA, 10V | 2V @ 20μA | Halogen Free | 19pF @ 25V | 1.5nC @ 10V | 16.2ns | - | ±20V | - | 170mA | -1.5V | - | 20V | -60V | - | - | - | - | - | - | - | - | -1.5 V | - | 900μm | 2.9mm | 1.3mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| BSS84PH6327XTSA2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDS6575Anlielectronics Тип | ON Semiconductor |
MOSFET P-CH 20V 10A 8-SO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 130mg | SILICON | - | 10A Ta | 2.5V 4.5V | 1 | 2.5W Ta | 196 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e4 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | 13MOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | LOGIC LEVEL COMPATIBLE | -20V | DUAL | GULL WING | - | -10A | - | - | - | - | - | - | - | - | - | Single | - | ENHANCEMENT MODE | 2.5W | - | 16 ns | P-Channel | SWITCHING | 13m Ω @ 10A, 4.5V | 1.5V @ 250μA | - | 4951pF @ 10V | 74nC @ 4.5V | 9ns | 20V | ±8V | 78 ns | 10A | - | - | 8V | - | - | - | -20V | - | - | - | - | - | -600 mV | - | 1.5mm | 5mm | 4mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDS6575 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF7201TRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 30V 7.3A 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | - | SILICON | - | 7.3A Tc | 4.5V 10V | 1 | 2.5W Tc | 21 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | 30mOhm | Matte Tin (Sn) | ULTRA LOW RESISTANCE | 30V | DUAL | GULL WING | - | 7.3A | - | - | - | - | - | - | - | - | - | Single | - | ENHANCEMENT MODE | 2.5W | - | 7 ns | N-Channel | SWITCHING | 30m Ω @ 7.3A, 10V | 1V @ 250μA | - | 550pF @ 25V | 28nC @ 10V | 35ns | - | ±20V | 19 ns | 7A | 1V | - | 20V | - | - | - | 30V | - | 30V | 70 mJ | 73 ns | - | 1 V | - | 1.4986mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRF7201TRPBF |
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