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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Number of Pins Weight Transistor Element Material Collector-Emitter Breakdown Voltage Number of Elements Test Conditions Turn Off Delay Time Operating Temperature Packaging Published JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Terminal Finish Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Form Peak Reflow Temperature (Cel) Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number JESD-30 Code Rise Time-Max Polarity Element Configuration Power Dissipation Case Connection Input Type Turn On Delay Time Power - Max Transistor Application Rise Time Polarity/Channel Type Collector Emitter Voltage (VCEO) Max Collector Current Reverse Recovery Time JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Max Breakdown Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Max Junction Temperature (Tj) Continuous Collector Current Turn Off Time-Nom (toff) IGBT Type Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor FGA60N65SMD
Mfr. Тип
FGA60N65SMD
Anlielectronics Тип

ON Semiconductor
In a Tube of 30, ON Semiconductor FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 7 Weeks ACTIVE (Last Updated: 4 days ago) - Through Hole Through Hole TO-3P-3, SC-65-3 3 6.401g SILICON 650V 1 400V, 60A, 3 Ω, 15V 104 ns -55°C~175°C TJ Tube 2008 e3 yes Active 1 (Unlimited) 3 EAR99 Tin (Sn) LOW CONDUCTION LOSS 8541.29.00.95 - 600W - - - - - - 70ns - Single - - Standard 18 ns 600W POWER CONTROL - N-CHANNEL 650V 120A 47 ns - - - - 2.5V @ 15V, 60A - - - Field Stop 189nC 180A 18ns/104ns 1.54mJ (on), 450μJ (off) 20V 6V 68ns 20.1mm 15.8mm 5mm No - ROHS3 Compliant Lead Free
    FGA60N65SMD
    FGA60N65SMD

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor FGL40N120ANDTU
    Mfr. Тип
    FGL40N120ANDTU
    Anlielectronics Тип

    		ON Semiconductor
    Trans IGBT Chip N-CH 1.2KV 64A 3-Pin(3+Tab) TO-264 Rail
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 4 Weeks ACTIVE (Last Updated: 6 days ago) Tin Through Hole Through Hole TO-264-3, TO-264AA 3 6.756g SILICON 1.2kV 1 600V, 40A, 5 Ω, 15V 110 ns -55°C~150°C TJ Tube 2008 e3 yes Not For New Designs 1 (Unlimited) 3 EAR99 - - 8541.29.00.95 1.2kV 500W - - 64A - - - - - Single 500W - Standard 15 ns - POWER CONTROL 20ns N-CHANNEL 1.2kV 64A 112 ns - 1200V - 45 ns 3.2V @ 15V, 40A 150°C 64A 165 ns NPT 220nC 160A 15ns/110ns 2.3mJ (on), 1.1mJ (off) - - - 29mm 20mm 5mm No - ROHS3 Compliant Lead Free
      FGL40N120ANDTU
      FGL40N120ANDTU

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      ON Semiconductor FGH40T120SMD-F155
      Mfr. Тип
      FGH40T120SMD-F155
      Anlielectronics Тип

      		ON Semiconductor
      IGBT 1200V 80A 555W TO247-3
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 5 Weeks ACTIVE (Last Updated: 4 days ago) Tin Through Hole Through Hole TO-247-3 3 6.39g - 1.2kV - 600V, 40A, 10 Ω, 15V 475 ns -55°C~175°C TJ Tube 2013 - yes Active 1 (Unlimited) - - - - - - 555W - - - - - - - - Single 555W - Standard 40 ns - - - N-CHANNEL 1.2kV 80A 65 ns - 1200V - - 2.4V @ 15V, 40A 175°C 80A - Trench Field Stop 370nC 160A 40ns/475ns 2.7mJ (on), 1.1mJ (off) 25V 7.5V - 24.75mm - - No - ROHS3 Compliant Lead Free
        FGH40T120SMD-F155
        FGH40T120SMD-F155

        ON Semiconductor
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor HGTG11N120CND
        Mfr. Тип
        HGTG11N120CND
        Anlielectronics Тип

        		ON Semiconductor
        IGBT 1200V 43A 298W TO247
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 5 Weeks ACTIVE, NOT REC (Last Updated: 2 days ago) - Through Hole Through Hole TO-247-3 3 6.39g SILICON 1.2kV 1 960V, 11A, 10 Ω, 15V 180 ns -55°C~150°C TJ Tube 2016 e3 yes Not For New Designs 1 (Unlimited) 3 EAR99 Tin (Sn) LOW CONDUCTION LOSS 8541.29.00.95 1.2kV 298W - - 43A - - - - NPN Single 298W - Standard 23 ns - MOTOR CONTROL - - 1.2kV 43A 70 ns - 1200V - 33 ns 2.4V @ 15V, 11A - - 570 ns NPT 100nC 80A 23ns/180ns 950μJ (on), 1.3mJ (off) - - - - - - No No SVHC ROHS3 Compliant Lead Free
          HGTG11N120CND
          HGTG11N120CND

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          ON Semiconductor FGH60N60SMD
          Mfr. Тип
          FGH60N60SMD
          Anlielectronics Тип

          		ON Semiconductor
          IGBT 600V 120A 600W TO247
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 5 Weeks ACTIVE (Last Updated: 5 days ago) Tin Through Hole Through Hole TO-247-3 3 6.39g SILICON 600V 1 400V, 60A, 3 Ω, 15V 146 ns -55°C~175°C TJ Tube 2013 e3 yes Active 1 (Unlimited) 3 EAR99 - LOW CONDUCTION LOSS 8541.29.00.95 - 600W - - - - FGH60N60 - 70ns - Single - COLLECTOR Standard 27 ns 600W POWER CONTROL - N-CHANNEL 600V 120A 39 ns TO-247AB - - 59 ns 2.5V @ 15V, 60A - - 163 ns Field Stop 189nC 180A 18ns/104ns 1.26mJ (on), 450μJ (off) 20V 6V 68ns 20.6mm 15.6mm 4.7mm No No SVHC ROHS3 Compliant Lead Free
            FGH60N60SMD
            FGH60N60SMD

            ON Semiconductor
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor HGT1S10N120BNST
            Mfr. Тип
            HGT1S10N120BNST
            Anlielectronics Тип

            		ON Semiconductor
            IGBT 1200V 35A 298W TO263AB
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 4 Weeks ACTIVE (Last Updated: 1 day ago) - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 3 1.31247g SILICON 1.2kV 1 960V, 10A, 10 Ω, 15V - -55°C~150°C TJ Tape & Reel (TR) 2017 e3 yes Active 1 (Unlimited) 2 EAR99 Tin (Sn) LOW CONDUCTION LOSS 8541.29.00.95 1.2kV 298W GULL WING - 35A - HGT1S10N120 R-PSSO-G2 15ns - Single 298W COLLECTOR Standard - - MOTOR CONTROL - N-CHANNEL 1.2kV 35A - - 1200V 1.2kV 32 ns 2.7V @ 15V, 10A - 55A 330 ns NPT 100nC 80A 23ns/165ns 320μJ (on), 800μJ (off) 20V - 200ns 4.83mm 10.67mm 9.65mm No No SVHC ROHS3 Compliant Lead Free
              HGT1S10N120BNST
              HGT1S10N120BNST

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              ON Semiconductor HGTG30N60A4D
              Mfr. Тип
              HGTG30N60A4D
              Anlielectronics Тип

              		ON Semiconductor
              FAIRCHILD SEMICONDUCTOR HGTG30N60A4DIGBT Single Transistor, General Purpose, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 5 Weeks ACTIVE, NOT REC (Last Updated: 2 days ago) Tin Through Hole Through Hole TO-247-3 3 6.39g SILICON 600V 1 390V, 30A, 3 Ω, 15V 150 ns -55°C~150°C TJ Tube 2016 e3 yes Not For New Designs 1 (Unlimited) 3 EAR99 - LOW CONDUCTION LOSS 8541.29.00.95 600V 463W - - 30A - HGTG30N60 - - - Single 463W COLLECTOR Standard 25 ns - POWER CONTROL 12s N-CHANNEL 600V 75A 55ns - - - 35 ns 2.6V @ 15V, 30A - - 238 ns - 225nC 240A 25ns/150ns 280μJ (on), 240μJ (off) - - - 20.82mm 15.87mm 4.82mm No No SVHC ROHS3 Compliant Lead Free
                HGTG30N60A4D
                HGTG30N60A4D

                ON Semiconductor
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                ON Semiconductor FGH40N60UFDTU
                Mfr. Тип
                FGH40N60UFDTU
                Anlielectronics Тип

                		ON Semiconductor
                FAIRCHILD SEMICONDUCTOR FGH40N60UFDTU IGBT Single Transistor, General Purpose, 80 A, 600 V, 290 W, 600 V, TO-247AB, 3 Pins
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 8 Weeks ACTIVE (Last Updated: 4 days ago) - Through Hole Through Hole TO-247-3 3 6.39g SILICON 600V 1 400V, 40A, 10 Ω, 15V 112 ns -55°C~150°C TJ Tube 2009 e3 yes Active 1 (Unlimited) 3 EAR99 Tin (Sn) LOW CONDUCTION LOSS 8541.29.00.95 - 290W - - - - FGH40N60 - - - Single - COLLECTOR Standard 24 ns 290W POWER CONTROL - N-CHANNEL 600V 80A 45 ns TO-247AB - - 110 ns 2.4V @ 15V, 40A - - 190 ns Field Stop 120nC 120A 24ns/112ns 1.19mJ (on), 460μJ (off) 20V 6.5V 100ns 20.6mm 15.6mm 4.7mm No No SVHC ROHS3 Compliant Lead Free
                  FGH40N60UFDTU
                  FGH40N60UFDTU

                  ON Semiconductor
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor FGH40N60SMD
                  Mfr. Тип
                  FGH40N60SMD
                  Anlielectronics Тип

                  		ON Semiconductor
                  IGBT 600V 80A 349W TO-247-3
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 5 Weeks - - Through Hole Through Hole TO-247-3 3 6.39g SILICON 600V 1 400V, 40A, 6 Ω, 15V - -55°C~175°C TJ Tube 2013 e3 yes Active 1 (Unlimited) 3 EAR99 Tin (Sn) LOW CONDUCTION LOSS 8541.29.00.95 - 349W - - - - FGH40N60 - 28ns - Single - COLLECTOR Standard - 349W POWER CONTROL - N-CHANNEL 600V 80A 36 ns TO-247AB - - 37 ns 2.5V @ 15V, 40A - - 132 ns Field Stop 119nC 120A 12ns/92ns 870μJ (on), 260μJ (off) 20V 6V 17ns 20.6mm 15.6mm 4.7mm No No SVHC ROHS3 Compliant Lead Free
                    FGH40N60SMD
                    FGH40N60SMD

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    ON Semiconductor HGTG5N120BND
                    Mfr. Тип
                    HGTG5N120BND
                    Anlielectronics Тип

                    		ON Semiconductor
                    FAIRCHILD SEMICONDUCTOR HGTG5N120BND IGBT Single Transistor, 21 A, 2.7 V, 167 W, 1.2 kV, TO-247, 3 Pins
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - ACTIVE, NOT REC (Last Updated: 2 days ago) Tin Through Hole Through Hole TO-247-3 3 6.39g SILICON 1.2kV 1 960V, 5A, 25 Ω, 15V - -55°C~150°C TJ Tube - e3 yes Not For New Designs 1 (Unlimited) 3 EAR99 - LOW CONDUCTION LOSS 8541.29.00.95 1.2kV 167W - - 21A - - - - - Single 167W COLLECTOR Standard - - MOTOR CONTROL - N-CHANNEL 1.2kV 21A 65 ns - 1200V 600V 35 ns 2.7V @ 15V, 5A - 21A 357 ns NPT 53nC 40A 22ns/160ns 450μJ (on), 390μJ (off) - - - 20.82mm 15.87mm 4.82mm No No SVHC ROHS3 Compliant Lead Free
                      HGTG5N120BND
                      HGTG5N120BND

                      ON Semiconductor
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      ON Semiconductor FGA25N120ANTDTU-F109
                      Mfr. Тип
                      FGA25N120ANTDTU-F109
                      Anlielectronics Тип

                      		ON Semiconductor
                      IGBT 1200V 50A 312W TO3P
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 6 Weeks ACTIVE (Last Updated: 3 days ago) - Through Hole Through Hole TO-3P-3, SC-65-3 3 6.401g - 1.2kV - 600V, 25A, 10 Ω, 15V - -55°C~150°C TJ Tube 2004 - yes Active 1 (Unlimited) - EAR99 - - - - 312W - - - - FGA25N120A - 90ns - Single - - Standard - 312W - - N-CHANNEL 1.2kV 50A 350 ns - 1200V - - 2.65V @ 15V, 50A - - - NPT and Trench 200nC 90A 50ns/190ns 4.1mJ (on), 960μJ (off) 20V 7.5V 180ns 18.9mm 15.8mm 5mm No - ROHS3 Compliant -
                        FGA25N120ANTDTU-F109
                        FGA25N120ANTDTU-F109

                        ON Semiconductor
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        ON Semiconductor HGTG20N60B3D
                        Mfr. Тип
                        HGTG20N60B3D
                        Anlielectronics Тип

                        		ON Semiconductor
                        FAIRCHILD SEMICONDUCTOR HGTG20N60B3DIGBT Single Transistor, General Purpose, 40 A, 1.8 V, 165 W, 600 V, TO-247, 3 Pins
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - ACTIVE, NOT REC (Last Updated: 2 days ago) - Through Hole Through Hole TO-247-3 3 6.39g SILICON 600V 1 - 220 ns -40°C~150°C TJ Tube 2011 e3 yes Not For New Designs 1 (Unlimited) 3 EAR99 Tin (Sn) LOW CONDUCTION LOSS 8541.29.00.95 600V 165W - - 20A - HGTG20N60 - - NPN Single 165W COLLECTOR Standard 25 ns - MOTOR CONTROL 20ns - 600V 40A 55ns - - 600V 45 ns 2V @ 15V, 20A - - 360 ns - 80nC 160A - 475μJ (on), 1.05mJ (off) - - - - - - No No SVHC ROHS3 Compliant Lead Free
                          HGTG20N60B3D
                          HGTG20N60B3D

                          ON Semiconductor
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          ON Semiconductor HGTG12N60A4D
                          Mfr. Тип
                          HGTG12N60A4D
                          Anlielectronics Тип

                          		ON Semiconductor
                          IGBT 600V 54A 167W TO247
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 4 Weeks ACTIVE, NOT REC (Last Updated: 2 days ago) Tin Through Hole Through Hole TO-247-3 3 6.39g SILICON 600V 1 390V, 12A, 10 Ω, 15V 96 ns -55°C~150°C TJ Tube 2002 e3 yes Not For New Designs 1 (Unlimited) 3 EAR99 - LOW CONDUCTION LOSS 8541.29.00.95 600V 167W - - 54A - HGTG12N60 - - - Single 167W COLLECTOR Standard 17 ns - POWER CONTROL 16ns N-CHANNEL 600V 54A 30 ns - - - 33 ns 2.7V @ 15V, 12A - 60A 180 ns - 78nC 96A 17ns/96ns 55μJ (on), 50μJ (off) - - - 20.82mm 15.87mm 4.82mm No No SVHC ROHS3 Compliant Lead Free
                            HGTG12N60A4D
                            HGTG12N60A4D

                            ON Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor FGA25N120ANTDTU
                            Mfr. Тип
                            FGA25N120ANTDTU
                            Anlielectronics Тип

                            		ON Semiconductor
                            In a Pack of 2, ON Semiconductor FGA25N120ANTDTU IGBT, 50 A 1200 V, 3-Pin TO-3P
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 6 Weeks - - Through Hole Through Hole TO-3P-3, SC-65-3 3 6.40101g - 1.2kV - 600V, 25A, 10 Ω, 15V 190 ns -55°C~150°C TJ Tube 2004 e3 - Active 1 (Unlimited) - EAR99 Tin (Sn) - 8541.29.00.95 1.2kV 312W - - 50A - FGA25N120A - - - Single 312mW - Standard 50 ns - - 60ns N-CHANNEL 1.2kV 50A 350 ns - 1200V - - 2.65V @ 15V, 50A 150°C 50A - NPT and Trench 200nC 90A 50ns/190ns 4.1mJ (on), 960μJ (off) 20V 7.5V - 23.8mm 15.8mm 5mm No - ROHS3 Compliant Lead Free
                              FGA25N120ANTDTU
                              FGA25N120ANTDTU

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              ON Semiconductor HGTG20N60A4D
                              Mfr. Тип
                              HGTG20N60A4D
                              Anlielectronics Тип

                              		ON Semiconductor
                              FAIRCHILD SEMICONDUCTOR HGTG20N60A4D IGBT Single Transistor, General Purpose, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 Pins
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 4 Weeks ACTIVE, NOT REC (Last Updated: 2 days ago) - Through Hole Through Hole TO-247-3 3 6.39g SILICON 600V 1 390V, 20A, 3 Ω, 15V 73 ns -55°C~150°C TJ Tube 2011 e3 yes Not For New Designs 1 (Unlimited) 3 EAR99 Tin (Sn) LOW CONDUCTION LOSS 8541.29.00.95 600V 290W - - 70A - HGTG20N60 - - - Single 290W COLLECTOR Standard 15 ns - POWER CONTROL 12ns N-CHANNEL 600V 70A 35 ns - - 600V 28 ns 2.7V @ 15V, 20A - - 160 ns - 142nC 280A 15ns/73ns 105μJ (on), 150μJ (off) - - - 20.82mm 15.87mm 4.82mm No No SVHC ROHS3 Compliant Lead Free
                                HGTG20N60A4D
                                HGTG20N60A4D

                                ON Semiconductor
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ON Semiconductor HGTP5N120BND
                                Mfr. Тип
                                HGTP5N120BND
                                Anlielectronics Тип

                                		ON Semiconductor
                                IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 6 Weeks ACTIVE, NOT REC (Last Updated: 2 days ago) - Through Hole Through Hole TO-220-3 3 1.8g SILICON 1.2kV 1 960V, 5A, 25 Ω, 15V - -55°C~150°C TJ Tube - e3 yes Not For New Designs 1 (Unlimited) 3 EAR99 Tin (Sn) LOW CONDUCTION LOSS 8541.29.00.95 1.2kV 167W - - 21A - - - - - Single 167W COLLECTOR Standard - - MOTOR CONTROL - N-CHANNEL 1.2kV 21A 65ns TO-220AB 1200V - 35 ns 2.7V @ 15V, 5A - 21A 357 ns NPT 53nC 40A 22ns/160ns 450μJ (on), 390μJ (off) - - - 9.4mm 10.67mm 4.83mm No - ROHS3 Compliant Lead Free
                                  HGTP5N120BND
                                  HGTP5N120BND

                                  ON Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ON Semiconductor HGTP10N120BN
                                  Mfr. Тип
                                  HGTP10N120BN
                                  Anlielectronics Тип

                                  		ON Semiconductor
                                  Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-220AB Rail
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 44 Weeks ACTIVE, NOT REC (Last Updated: 2 days ago) - Through Hole Through Hole TO-220-3 3 1.8g SILICON 1.2kV 1 960V, 10A, 10 Ω, 15V - -55°C~150°C TJ Tube - e3 yes Not For New Designs 1 (Unlimited) 3 EAR99 Tin (Sn) LOW CONDUCTION LOSS 8541.29.00.95 1.2kV 49.2W - - 35A - - - - - Single 298W COLLECTOR Standard - - MOTOR CONTROL - N-CHANNEL 1.2kV 35A - - 1200V 300V 32 ns 2.7V @ 15V, 10A - 35A 330 ns NPT 100nC 80A 23ns/165ns 320μJ (on), 800μJ (off) - - - 9.4mm 10.67mm 4.83mm No - ROHS3 Compliant Lead Free
                                    HGTP10N120BN
                                    HGTP10N120BN

                                    ON Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    ON Semiconductor FGA40N65SMD
                                    Mfr. Тип
                                    FGA40N65SMD
                                    Anlielectronics Тип

                                    		ON Semiconductor
                                    IGBT Transistors 650V, 40A Field Stop IGBT
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 6 Weeks ACTIVE (Last Updated: 3 days ago) Tin Through Hole Through Hole TO-3P-3, SC-65-3 3 6.401g SILICON 650V 1 400V, 40A, 6 Ω, 15V 92 ns -55°C~175°C TJ Tube 2008 e3 yes Active 1 (Unlimited) 3 EAR99 - LOW CONDUCTION LOSS 8541.29.00.95 - 349W - - - - - - 28ns - Single 349W - Standard 12 ns - POWER CONTROL - N-CHANNEL 650V 80A 42 ns - - - - 2.5V @ 15V, 40A - - - Field Stop 119nC 120A 12ns/92ns 820μJ (on), 260μJ (off) 20V 6V 17ns 20.1mm 16.2mm 5mm No - ROHS3 Compliant Lead Free
                                      FGA40N65SMD
                                      FGA40N65SMD

                                      ON Semiconductor
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor HGTD1N120BNS9A
                                      Mfr. Тип
                                      HGTD1N120BNS9A
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      NPTPIGBT TO252 5.3A 1200V
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 7 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 3 260.37mg SILICON 1.2kV 1 960V, 1A, 82 Ω, 15V 67 ns -55°C~150°C TJ Tape & Reel (TR) 2014 - yes Active 1 (Unlimited) 2 EAR99 - LOW CONDUCTION LOSS, AVALANCHE RATED 8541.29.00.95 1.2kV 60W GULL WING - 5.3A - HGTD1N120 R-PSSO-G2 14ns - Single 60W COLLECTOR Standard 15 ns - MOTOR CONTROL - N-CHANNEL 1.2kV 5.3A - TO-252AA 1200V 1.2kV 24 ns 2.9V @ 15V, 1A - - 333 ns NPT 14nC 6A 15ns/67ns 70μJ (on), 90μJ (off) 20V - - - - - No No SVHC ROHS3 Compliant Lead Free
                                        HGTD1N120BNS9A
                                        HGTD1N120BNS9A

                                        ON Semiconductor
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        ON Semiconductor NGTB25N120FL2WG
                                        Mfr. Тип
                                        NGTB25N120FL2WG
                                        Anlielectronics Тип

                                        		ON Semiconductor
                                        Trans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube
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                                          		 33 Weeks ACTIVE (Last Updated: 1 day ago) - Through Hole Through Hole TO-247-3 3 - - 1.2kV - 600V, 25A, 10 Ω, 15V - -55°C~175°C TJ Tube 2014 e3 yes Active 1 (Unlimited) - EAR99 Tin (Sn) - - - 385W - NOT SPECIFIED - NOT SPECIFIED - - - - Single - - Standard - 385W - - N-CHANNEL 2.4V 50A 154 ns - 1200V - - 2.4V @ 15V, 25A - - - Field Stop 178nC 100A 87ns/179ns 1.95mJ (on), 600μJ (off) 20V 6.5V - - - - - - ROHS3 Compliant Lead Free
                                          NGTB25N120FL2WG
                                          NGTB25N120FL2WG

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