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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Weight Transistor Element Material Base Product Number Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Continuous Collector Current Ic Max Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Gate-Emitter Leakage Current Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Styles Number of Elements Package Pd - Power Dissipation Product Status RoHS Schedule B Test Conditions Turn Off Delay Time Unit Weight Voltage Rating (DC) Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Qualification Status Rise Time-Max Polarity Configuration Element Configuration Power Dissipation Case Connection Input Type Turn On Delay Time Power - Max Transistor Application Halogen Free Rise Time Polarity/Channel Type Collector Emitter Voltage (VCEO) Max Collector Current Operating Temperature Range Reverse Recovery Time JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Max Breakdown Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Max Junction Temperature (Tj) Continuous Collector Current Turn Off Time-Nom (toff) IGBT Type Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
Infineon Technologies IKD04N60RATMA1
Mfr. Тип
IKD04N60RATMA1
Anlielectronics Тип

Infineon Technologies
Trans IGBT Chip N-CH 600V 8A 3-Pin TO-252 T/R
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 16 Weeks - - Surface Mount Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - 3 - SILICON - - 600V 2.1V - - - - - - - - - - 1 - - - - - 400V, 4A, 43 Ω, 15V - - - -40°C~175°C TJ Tape & Reel (TR) 2005 TrenchStop™ e3 no Active 1 (Unlimited) 2 - EAR99 Tin (Sn) - - LOW CONDUCTION LOSS - - 75W - GULL WING NOT SPECIFIED not_compliant - NOT SPECIFIED - 3 - R-PSSO-G2 Not Qualified - - - Single - COLLECTOR Standard - 75W POWER CONTROL Halogen Free - N-CHANNEL 2.1V 8A - 43 ns - - 600V 20 ns 2.1V @ 15V, 4A - - 342 ns Trench Field Stop 27nC 12A 14ns/146ns 90μJ (on), 150μJ (off) 20V 5.7V - - - - - No SVHC ROHS3 Compliant -
    IKD04N60RATMA1
    IKD04N60RATMA1

    Infineon Technologies
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Infineon Technologies IRGP4263PBF
    Mfr. Тип
    IRGP4263PBF
    Anlielectronics Тип

    		Infineon Technologies
    IGBT 650V 90A 300W TO-247
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 14 Weeks - - Through Hole Through Hole TO-247-3 - 3 38.000013g - - - 650V 1.7V - - - - - - - - - - - - - - - - 400V, 48A, 10 Ω, 15V - - - -40°C~175°C TJ Tube 2012 - - - Obsolete 1 (Unlimited) - - EAR99 - - - - - - 300W - - - - - - - - - - - 80ns - - Single - - Standard - 300W - - - N-CHANNEL 2.1V 90A - - - - - - 2.1V @ 15V, 48A - - - - 150nC 192A 70ns/140ns 1.7mJ (on), 1mJ (off) 20V 7.7V 50ns 21.1mm 16.13mm 5.2mm No No SVHC RoHS Compliant Lead Free
      IRGP4263PBF
      IRGP4263PBF

      Infineon Technologies
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Infineon Technologies IRGSL4062DPBF
      Mfr. Тип
      IRGSL4062DPBF
      Anlielectronics Тип

      		Infineon Technologies
      IGBT 600V 48A 250W TO262
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 16 Weeks - - Through Hole Through Hole TO-262-3 Long Leads, I2Pak, TO-262AA - 3 - SILICON - - 600V 1.95V - - - - - - - - - - 1 - - - - - 400V, 24A, 10 Ω, 15V - - - -55°C~175°C TJ Tube 2009 - e3 - Obsolete 1 (Unlimited) 3 - EAR99 Matte Tin (Sn) - with Nickel (Ni) barrier - - - - - 250W - - 260 - - 30 - - - - - - - - Single 250W COLLECTOR Standard - - POWER CONTROL - - N-CHANNEL 1.95V 48A - 89 ns - - - 64 ns 1.95V @ 15V, 24A - - 164 ns Trench 50nC 96A 41ns/104ns 115μJ (on), 600μJ (off) 20V 6.5V 41ns 9.65mm 10.67mm 4.83mm No No SVHC RoHS Compliant -
        IRGSL4062DPBF
        IRGSL4062DPBF

        Infineon Technologies
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor FGA90N33ATDTU
        Mfr. Тип
        FGA90N33ATDTU
        Anlielectronics Тип

        		ON Semiconductor
        IGBT 330V 90A 223W TO3P
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 36 Weeks ACTIVE, NOT REC (Last Updated: 4 days ago) - Through Hole Through Hole TO-3P-3, SC-65-3 - 3 6.401g SILICON - - 330V - - - - - - - - - - - 1 - - - - - - - - - -55°C~150°C TJ Tube 2004 - e3 yes Obsolete 1 (Unlimited) 3 - EAR99 MATTE TIN - - LOW CONDUCTION LOSS 8541.29.00.95 - 223W - - - - - - - - - - - - - - Single - - Standard - 223W POWER CONTROL - - N-CHANNEL 330V 90A - 23 ns - - - 60 ns 1.4V @ 15V, 20A - - 360 ns Trench 95nC 330A - - - - - - - - No - RoHS Compliant Lead Free
          FGA90N33ATDTU
          FGA90N33ATDTU

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          STMicroelectronics STGB20N45LZAG
          Mfr. Тип
          STGB20N45LZAG
          Anlielectronics Тип

          		STMicroelectronics
          POWER TRANSISTORS
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 8 Weeks ACTIVE (Last Updated: 8 months ago) - - Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - - - - - - - - - - 25A - - - - - - - - - - - - - 300V, 10A, 1k Ω, 5V - - - -55°C~175°C TJ Tape & Reel (TR) - Automotive, AEC-Q101 - - Active 1 (Unlimited) - - - - - - - - - - - - - - - - STGB20 - - - - - - - - - - Logic - 150W - - - - - - - - - 450V - - 1.25V @ 4V, 6A - - - - 26nC 50A 1.1μs/4.6μs - - - - - - - - - ROHS3 Compliant -
            STGB20N45LZAG
            STGB20N45LZAG

            STMicroelectronics
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Atmel (Microchip Technology) APT30GP60BDQ1G
            Mfr. Тип
            APT30GP60BDQ1G
            Anlielectronics Тип

            		Atmel (Microchip Technology)
            IGBT Transistors FG, IGBT, 600V, 30A, TO-247, RoHSView in Development Tools Selector
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - - - - - - - - - - - 600 V - 2.2 V 100 A - - 1 - - 20 V, + 20 V + 150 C - - 55 C Through Hole - - 463 W - Details - - - 0.208116 oz - - Tube - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Single - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
              APT30GP60BDQ1G
              APT30GP60BDQ1G

              Atmel (Microchip Technology)
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              ON Semiconductor TIG058E8-TL-H
              Mfr. Тип
              TIG058E8-TL-H
              Anlielectronics Тип

              		ON Semiconductor
              IGBT 400V ECH8
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 4 Weeks ACTIVE (Last Updated: 1 day ago) - Surface Mount Surface Mount 8-SMD, Flat Lead - 8 - - - - 400V - - - - - - - - - - - - - - - - - - - - - 150°C TJ Tape & Reel (TR) 2013 - e6 yes Active 1 (Unlimited) - - EAR99 Tin/Bismuth (Sn/Bi) - - - - - - - - NOT SPECIFIED not_compliant - NOT SPECIFIED - 8 - - - - - - Single - - Standard - - - Halogen Free - - 400V 150A - - - - 400V - 5.6V @ 4V, 100A - - - - - - - - - - - 900μm 2.9mm 2.3mm - - ROHS3 Compliant Lead Free
                TIG058E8-TL-H
                TIG058E8-TL-H

                ON Semiconductor
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Atmel (Microchip Technology) APT25GP120BDQ1G
                Mfr. Тип
                APT25GP120BDQ1G
                Anlielectronics Тип

                		Atmel (Microchip Technology)
                IGBT Transistors FG, IGBT, 1200V, TO-247, RoHSView in Development Tools Selector
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - - - - - TO-247-3 - - - - - 1.2 kV - 3.3 V 69 A 69 A - 1 100 nA - 20 V, + 20 V + 150 C - - 55 C Through Hole - - 417 W - Details - - - 1.340411 oz - - Tube - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Single - - - - - - - - - - - - - 55 C to + 150 C - - - - - - - 69 A - - - - - - - - - 5.31 mm 21.46 mm 16.26 mm - - - -
                  APT25GP120BDQ1G
                  APT25GP120BDQ1G

                  Atmel (Microchip Technology)
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Infineon Technologies IRG4PH50S-EPBF
                  Mfr. Тип
                  IRG4PH50S-EPBF
                  Anlielectronics Тип

                  		Infineon Technologies
                  IGBT 1200V 57A 200W TO247AD
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 14 Weeks - - Through Hole Through Hole TO-247-3 - 3 - SILICON - - 1.2kV 1.7V - - - - - - - - - - 1 - - - - - 960V, 33A, 5 Ω, 15V - - - -55°C~150°C TJ Tube 2000 - - - Obsolete 1 (Unlimited) 3 - EAR99 - - - - - - 200W SINGLE - - - - - - - - - - - - - Dual 200W COLLECTOR Standard - - POWER CONTROL - - N-CHANNEL 1.7V 57A - - TO-247AD 1200V - 62 ns 1.7V @ 15V, 33A - - 2170 ns - 167nC 114A 32ns/845ns 1.8mJ (on), 19.6mJ (off) - - - 20.7mm 15.87mm 5.3086mm No No SVHC RoHS Compliant Lead Free
                    IRG4PH50S-EPBF
                    IRG4PH50S-EPBF

                    Infineon Technologies
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Infineon Technologies IKD06N60RAATMA2
                    Mfr. Тип
                    IKD06N60RAATMA2
                    Anlielectronics Тип

                    		Infineon Technologies
                    IGBT 600V 12A 100W TO252-3
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 18 Weeks - - Surface Mount Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - 3 - SILICON - - - - - - - - - - - - - - 1 - - - - - 400V, 6A, 23 Ω, 15V - - - -40°C~175°C TJ Tape & Reel (TR) 2012 TrenchStop® - - Last Time Buy 1 (Unlimited) 2 - EAR99 - - - LOW CONDUCTION LOSS - - - - GULL WING NOT SPECIFIED - - NOT SPECIFIED *KD06N60 - AEC-Q101 R-PSSO-G2 - - - - Single - COLLECTOR Standard - 100W GENERAL PURPOSE Halogen Free - N-CHANNEL 600V 12A - 68ns - - - 22 ns 2.1V @ 15V, 6A - - 335 ns Trench 48nC 18A 12ns/127ns - - - - - - - - - ROHS3 Compliant Contains Lead
                      IKD06N60RAATMA2
                      IKD06N60RAATMA2

                      Infineon Technologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      ON Semiconductor FGB40T65SPD-F085
                      Mfr. Тип
                      FGB40T65SPD-F085
                      Anlielectronics Тип

                      		ON Semiconductor
                      IGBT FIELD STOP 650V 80A D2PAK
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 4 Weeks ACTIVE (Last Updated: 6 days ago) - - Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB YES - - SILICON - - - - - - 80A - - - - - - - 1 - - - - - 400V, 40A, 6 Ω, 15V - - - -55°C~175°C TJ Tape & Reel (TR) 2013 - e3 yes Active 1 (Unlimited) 2 - - Tin (Sn) - - - - - - SINGLE GULL WING 260 - - 30 - - AEC-Q101 R-PSSO-G2 - - - SINGLE WITH BUILT-IN DIODE - - COLLECTOR Standard - 267W POWER CONTROL - - N-CHANNEL - - - 34ns - 650V - 49 ns 2.4V @ 15V, 40A - - 51 ns Trench Field Stop 36nC 120A 18ns/35ns 970μJ (on), 280μJ (off) - - - - - - - - RoHS Compliant -
                        FGB40T65SPD-F085
                        FGB40T65SPD-F085

                        ON Semiconductor
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Microchip Technology APT35GP120B2DQ2G
                        Mfr. Тип
                        APT35GP120B2DQ2G
                        Anlielectronics Тип

                        		Microchip Technology
                        IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHSView in Development Tools Selector
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - Production (Last Updated: 2 months ago) - Through Hole Through Hole TO-247-3 - 3 - - APT35GP120 - 1.2 kV - - - 96 A 1 - - - Microchip Technology - Through Hole - Tube - Active Details 8541290080/8541290080 600V, 35A, 4.3Ohm, 15V - 1.340411 oz 1.2 kV -55°C ~ 150°C (TJ) Tube - POWER MOS 7® - - - - - - - - 150 °C -55 °C - - - 543 W - - - - 96 A - - - - - - - - - Single - - Standard - 543 W - - - - 1.2 kV 96 A - - - 1200 V - - 3.9V @ 15V, 35A - - - PT 150 nC 140 A 16ns/95ns 750µJ (on), 680µJ (off) - - - - - - No - - Lead Free
                          APT35GP120B2DQ2G
                          APT35GP120B2DQ2G

                          Microchip Technology
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          ON Semiconductor NGTB30N120FL2WG
                          Mfr. Тип
                          NGTB30N120FL2WG
                          Anlielectronics Тип

                          		ON Semiconductor
                          IGBT Transistors 1200V/30A FAST IGBT FSII
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 11 Weeks ACTIVE (Last Updated: 6 days ago) - Through Hole Through Hole TO-247-3 - 3 6.500007g - - - 1.2kV 2V - - - - - - - - - - - - - - - - 600V, 30A, 10 Ω, 15V - - - -55°C~175°C TJ Tube 2006 - e3 yes Active 1 (Unlimited) - - EAR99 Tin (Sn) - - - - - 452W - - NOT SPECIFIED - - NOT SPECIFIED - 3 - - - - - - Single - - Standard - 452W - - - - 1.2kV 60A - 240 ns - 1200V - - 2.3V @ 15V, 30A - - - Trench Field Stop 220nC 120A 98ns/210ns 2.6mJ (on), 700μJ (off) - - - 21.4mm 16.25mm 5.3mm - No SVHC ROHS3 Compliant Lead Free
                            NGTB30N120FL2WG
                            NGTB30N120FL2WG

                            ON Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Infineon Technologies IRG4BC30WPBF
                            Mfr. Тип
                            IRG4BC30WPBF
                            Anlielectronics Тип

                            		Infineon Technologies
                            IGBT 600V 23A 100W TO220AB
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 16 Weeks - - Through Hole Through Hole TO-220-3 - 3 6.000006g SILICON - - 600V 2.7V - - - - - - - - - - 1 - - - - - 480V, 12A, 23 Ω, 15V 99 ns - - -55°C~150°C TJ Tube 2003 - - - Last Time Buy 1 (Unlimited) 3 Through Hole EAR99 - - - LOW CONDUCTION LOSS - 600V 100W SINGLE - - - 23A - - - - - - - - - Dual 100W COLLECTOR Standard 25 ns - POWER CONTROL - 17ns N-CHANNEL 2.7V 23A - - TO-220AB - - 41 ns 2.7V @ 15V, 12A - - 300 ns - 51nC 92A 25ns/99ns 130μJ (on), 130μJ (off) 20V 6V 100ns 8.77mm 10.54mm 4.69mm No No SVHC ROHS3 Compliant Contains Lead, Lead Free
                              IRG4BC30WPBF
                              IRG4BC30WPBF

                              Infineon Technologies
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Infineon Technologies IKW40N65F5FKSA1
                              Mfr. Тип
                              IKW40N65F5FKSA1
                              Anlielectronics Тип

                              		Infineon Technologies
                              IGBT Transistors IGBT PRODUCTS
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 26 Weeks - - Through Hole Through Hole TO-247-3 - 3 - - - - 650V 1.6V - - - - - - - - - - - - - - - - 400V, 20A, 15 Ω, 15V 160 ns - - -40°C~175°C TJ Tube 2008 TrenchStop® e3 yes Active 1 (Unlimited) - - EAR99 Tin (Sn) - - - - - 255W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - - Single 255W - Standard 19 ns - - - - - 650V 74A - 60 ns - - - - 2.1V @ 15V, 40A 175°C 74A - - 95nC 120A 19ns/160ns 360μJ (on), 100μJ (off) - - - 25.5mm - - - Unknown ROHS3 Compliant Lead Free
                                IKW40N65F5FKSA1
                                IKW40N65F5FKSA1

                                Infineon Technologies
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Atmel (Microchip Technology) APT35GN120L2DQ2G
                                Mfr. Тип
                                APT35GN120L2DQ2G
                                Anlielectronics Тип

                                		Atmel (Microchip Technology)
                                IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHSView in Development Tools Selector
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - - - - TO-264MAX-3 - - - - - 1.2 kV - 1.7 V 94 A 94 A - 1 600 nA - 30 V, + 30 V + 150 C - - 55 C Through Hole - - 379 W - Details - - - 0.373904 oz - - Tube - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Single - - - - - - - - - - - - - 55 C to + 150 C - - - - - - - 94 A - - - - - - - - - 5.21 mm 26.49 mm 20.5 mm - - - -
                                  APT35GN120L2DQ2G
                                  APT35GN120L2DQ2G

                                  Atmel (Microchip Technology)
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ON Semiconductor HGTG30N60B3
                                  Mfr. Тип
                                  HGTG30N60B3
                                  Anlielectronics Тип

                                  		ON Semiconductor
                                  FAIRCHILD SEMICONDUCTOR HGTG30N60B3IGBT Single Transistor, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 Pins
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 4 Weeks ACTIVE (Last Updated: 2 days ago) Tin Through Hole Through Hole TO-247-3 - 3 6.39g SILICON - - 600V 1.45V - - - - - - - - - - 1 - - - - - 480V, 30A, 3 Ω, 15V - - - -55°C~150°C TJ Tube 2013 - e3 yes Active 1 (Unlimited) 3 - EAR99 - - - LOW CONDUCTION LOSS 8541.29.00.95 600V 208W - - - - 60A - HGTG30N60 - - - - - NPN - Single 208W COLLECTOR Standard - - POWER CONTROL - - - 600V 60A - - - - 600V 56 ns 1.9V @ 15V, 30A - 60A 365 ns - 170nC 220A 36ns/137ns 500μJ (on), 680μJ (off) 20V 6V 150ns 20.82mm 15.87mm 4.82mm No No SVHC ROHS3 Compliant Lead Free
                                    HGTG30N60B3
                                    HGTG30N60B3

                                    ON Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    ON Semiconductor FGH50T65UPD
                                    Mfr. Тип
                                    FGH50T65UPD
                                    Anlielectronics Тип

                                    		ON Semiconductor
                                    IGBT Transistors 650 V 100 A 240 W
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 50 Weeks ACTIVE, NOT REC (Last Updated: 5 days ago) - Through Hole Through Hole TO-247-3 - 3 6.39g SILICON - - 650V 2.1V - - - - - - - - - - 1 - - - - - 400V, 50A, 6 Ω, 15V - - - -55°C~175°C TJ Tube 2013 - e3 yes Not For New Designs 1 (Unlimited) 3 - EAR99 Tin (Sn) - - - 8541.29.00.95 - 340W - - - - - - - - - - - 77ns - - Single - COLLECTOR Standard - 340W POWER CONTROL - - N-CHANNEL 650V 100A - 53 ns TO-247AB - - 101 ns 2.3V @ 15V, 50A - - 185 ns Trench Field Stop 230nC 150A 32ns/160ns 2.7mJ (on), 740μJ (off) 25V 7.5V 29ns 20.82mm 15.87mm 4.82mm No - ROHS3 Compliant Lead Free
                                      FGH50T65UPD
                                      FGH50T65UPD

                                      ON Semiconductor
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor NGTB40N60FL2WG
                                      Mfr. Тип
                                      NGTB40N60FL2WG
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      ON SEMICONDUCTOR NGTB40N60FL2WGIGBT Single Transistor, 80 A, 1.7 V, 366 W, 600 V, TO-247, 3 Pins
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 4 Weeks LAST SHIPMENTS (Last Updated: 2 days ago) - Through Hole Through Hole TO-247-3 - 3 38.000013g - - - 600V 1.85V - - - - - - - - - - - - - - - - 400V, 40A, 10 Ω, 15V - - - -55°C~175°C TJ Tube 2011 - e3 yes Obsolete 1 (Unlimited) - - - Tin (Sn) - - - - - 366W - - - - - - - - - - - - - - Single - - Standard - 366W - - - N-CHANNEL 600V 80A - 72 ns - - - - 2V @ 15V, 40A - - - Trench Field Stop 170nC 160A 84ns/177ns 970μJ (on), 440μJ (off) 20V 6.5V - 21.08mm 16.26mm 5.3mm - No SVHC RoHS Compliant Lead Free
                                        NGTB40N60FL2WG
                                        NGTB40N60FL2WG

                                        ON Semiconductor
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        STMicroelectronics STGB6NC60HDT4
                                        Mfr. Тип
                                        STGB6NC60HDT4
                                        Anlielectronics Тип

                                        		STMicroelectronics
                                        IGBT 600V 15A 56W D2PAK
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 8 Weeks ACTIVE (Last Updated: 8 months ago) - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - 3 2.240009g SILICON - - 600V 2.7V - - - - - - - - - - 1 - - - - - 390V, 3A, 10 Ω, 15V 98 ns - - -55°C~150°C TJ Tape & Reel (TR) - PowerMESH™ e3 - Active 1 (Unlimited) 2 - EAR99 MATTE TIN - - - - 600V 56W - GULL WING 245 - 15A 30 STGB6 3 - R-PSSO-G2 - - - - Single - - Standard 13 ns - POWER CONTROL - 5ns N-CHANNEL 600V 15A - 21 ns - - 600V 17.3 ns 2.5V @ 15V, 3A - 12A 222 ns - 13.6nC 21A 12ns/76ns 20μJ (on), 68μJ (off) 20V 5.75V - 4.6mm 10.4mm 9.35mm No - ROHS3 Compliant Lead Free
                                          STGB6NC60HDT4
                                          STGB6NC60HDT4

                                          STMicroelectronics
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