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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Number of Terminals Transistor Element Material Base Product Number Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Continuous Collector Current Ic Max Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Gate-Emitter Leakage Current Ihs Manufacturer Manufacturer Part Number Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Styles Number of Elements Operating Temperature-Max Package Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Part Package Code Pd - Power Dissipation Product Status Reflow Temperature-Max (s) Risk Rank RoHS Rohs Code Schedule B Test Conditions Tradename Turn Off Delay Time Turn-off Time-Nom (toff) Turn-on Time-Nom (ton) Unit Weight Voltage Rating (DC) Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Rise Time-Max Configuration Element Configuration Power Dissipation Case Connection Input Type Turn On Delay Time Power - Max Clamping Voltage Transistor Application Halogen Free Rise Time Polarity/Channel Type Collector Emitter Voltage (VCEO) Max Collector Current Operating Temperature Range Reverse Recovery Time JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Max Breakdown Voltage Power Dissipation-Max (Abs) Turn On Time Vce(on) (Max) @ Vge, Ic Collector Current-Max (IC) Continuous Collector Current Turn Off Time-Nom (toff) IGBT Type Collector-Emitter Voltage-Max Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Reverse Recovery Time (trr) Fall Time-Max (tf) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
IXYS IXLF19N250A
Mfr. Тип
IXLF19N250A
Anlielectronics Тип

IXYS
Trans IGBT Chip N-CH 2.5KV 32A 3-Pin ISOPLUS I4-PAC
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 38 Weeks - Through Hole Through Hole i4-Pac™-5 (3 Leads) - 3 - - - SILICON - - 2.5kV 3.2V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - - 1500V, 19A, 47 Ω, 15V - 600 ns - - - - -55°C~150°C TJ Bulk 2005 - e1 yes Active Not Applicable 3 - - Tin/Silver/Copper (Sn/Ag/Cu) - - UL RECOGNIZED, HIGH RELIABILITY - 2.5kV 250W - - - - 32A - - 3 - - - - Single 250W ISOLATED Standard 100 ns - - POWER CONTROL - 50ns N-CHANNEL 2.5kV 32A - - - 2500V - - 150 ns 3.9V @ 15V, 19A - - 850 ns NPT - 142nC - - 15mJ (on), 30mJ (off) 20V 8V - - - - - No - ROHS3 Compliant Lead Free
    IXLF19N250A
    IXLF19N250A

    IXYS
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Microchip Technology APT80GA60LD40
    Mfr. Тип
    APT80GA60LD40
    Anlielectronics Тип

    		Microchip Technology
    IGBT Transistors FG, IGBT-COMBI, 600V, TO-264View in Development Tools Selector
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - Production (Last Updated: 2 months ago) Through Hole Through Hole TO-264-3 NO - TO-264 10.6 g 3 SILICON APT80GA60 600 V 600 V 2 V 143 A 143 A 143 A 1 100 nA MICROSEMI CORP APT80GA60LD40 - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole 1 150 °C Tube PLASTIC/EPOXY ROHS COMPLIANT, TO-264, 3 PIN RECTANGULAR FLANGE MOUNT Active TO-264AA 625 W Active NOT SPECIFIED 2.25 Details Yes 8541290080, 8541290080/8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080 400V, 47A, 4.7Ohm, 15V POWER MOS 8 - 326 ns 52 ns 0.373904 oz - -55°C ~ 150°C (TJ) Tube - POWER MOS 8™ e1 Yes - - - - EAR99 Tin/Silver/Copper (Sn/Ag/Cu) 150 °C -55 °C LOW CONDUCTION LOSS - - 625 W SINGLE THROUGH-HOLE NOT SPECIFIED unknown - - - 3 R-PSFM-T3 Not Qualified - Single Single 625 COLLECTOR Standard - 625 W - POWER CONTROL - - N-CHANNEL 600 V 143 A - 55 C to + 150 C 22 ns TO-264AA 600 V - - - 2.5V @ 15V, 47A 143 A 143 A - PT 600 V 230 nC 240 A 23ns/158ns 840µJ (on), 751µJ (off) - - 22 ns - 5.21 mm 26.49 mm 20.5 mm No - - -
      APT80GA60LD40
      APT80GA60LD40

      Microchip Technology
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      ON Semiconductor NGTB60N65FL2WG
      Mfr. Тип
      NGTB60N65FL2WG
      Anlielectronics Тип

      		ON Semiconductor
      650V/60A IGBT FSII
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 18 Weeks ACTIVE (Last Updated: 1 day ago) Surface Mount Through Hole TO-247-3 - 3 - - - - - - 650V 1.64V - - - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 60A, 10 Ω, 15V - - - - - - -55°C~175°C TJ Tube 2015 - - yes Active 1 (Unlimited) - - - - - - - - - 595W - - - - - - - - - - - - - - - Standard - 595W - - - - - 2V 100A - 96 ns - - - - - 2V @ 15V, 60A - - - Field Stop - 318nC 240A 117ns/265ns 1.59mJ (on), 660μJ (off) - - - - - - - - No SVHC ROHS3 Compliant Lead Free
        NGTB60N65FL2WG
        NGTB60N65FL2WG

        ON Semiconductor
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        STMicroelectronics STGF19NC60KD
        Mfr. Тип
        STGF19NC60KD
        Anlielectronics Тип

        		STMicroelectronics
        IGBT 600V 16A 32W TO220FP
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 8 Weeks - Through Hole Through Hole TO-220-3 Full Pack - 3 - - - SILICON - - 600V 2V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - - 480V, 12A, 10 Ω, 15V - - - - - - -55°C~150°C TJ Tube - PowerMESH™ - - Active 1 (Unlimited) 3 - EAR99 - - - - - - 32W - - - - - - STGF19 3 - - - - Single 32W ISOLATED Standard - - - POWER CONTROL - - N-CHANNEL 600V 16A - 31 ns TO-220AB - - - 38 ns 2.75V @ 15V, 12A - - 270 ns - - 55nC 75A 30ns/105ns 165μJ (on), 255μJ (off) 20V 6.5V - - - - - No - ROHS3 Compliant -
          STGF19NC60KD
          STGF19NC60KD

          STMicroelectronics
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          STMicroelectronics STGP15H60DF
          Mfr. Тип
          STGP15H60DF
          Anlielectronics Тип

          		STMicroelectronics
          IGBT 600V 30A 115W TO220
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 20 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Through Hole TO-220-3 - 3 - 6.000006g - - - - 600V 1.6V - - - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 15A, 10 Ω, 15V - - - - - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - - EAR99 - - - - - - 115W - - - - - - STGP15 - - - - - Single - - Standard - 115W - - - - - 600V 30A - 103 ns - - - - - 2V @ 15V, 15A - - - Trench Field Stop - 81nC 60A 24.5ns/118ns 136μJ (on), 207μJ (off) - - - - 15.75mm 10.4mm 4.6mm No - ROHS3 Compliant Lead Free
            STGP15H60DF
            STGP15H60DF

            STMicroelectronics
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            STMicroelectronics STGB30V60DF
            Mfr. Тип
            STGB30V60DF
            Anlielectronics Тип

            		STMicroelectronics
            Trans IGBT Chip N-CH 600V 60A 3-Pin(2 Tab) D2PAK T/R
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 20 Weeks - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - - - 2.240009g - SILICON - - 600V 1.85V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - - 400V, 30A, 10 Ω, 15V - - - - - - -55°C~175°C TJ Cut Tape (CT) - - - - Active 1 (Unlimited) 2 - EAR99 - - - - - - 258W - GULL WING NOT SPECIFIED - - NOT SPECIFIED STGB30 - R-PSSO-G2 - - - Single - COLLECTOR Standard - 258W - POWER CONTROL - - N-CHANNEL 600V 60A - 53 ns - - 600V - 59 ns 2.3V @ 15V, 30A - - 225 ns Trench Field Stop - 163nC 120A 45ns/189ns 383μJ (on), 233μJ (off) 20V - - - - - - - - ROHS3 Compliant -
              STGB30V60DF
              STGB30V60DF

              STMicroelectronics
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Microchip Technology APT80GA60B
              Mfr. Тип
              APT80GA60B
              Anlielectronics Тип

              		Microchip Technology
              IGBT Transistors FG, IGBT, 600V, TO-247View in Development Tools Selector
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - - - Through Hole TO-247-3 - - TO-247 [B] - - - APT80GA60 600 V - 2 V 143 A 143 A 143 A 1 100 nA - - - 20 V, + 20 V + 150 C Microchip Technology - 55 C Through Hole - - Tube - - - - - - 625 W Active - - Details - - 400V, 47A, 4.7Ohm, 15V POWER MOS 8 - - - 1.340411 oz - -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - - - - - - - - - - - - - - - Single - - - Standard - 625 W - - - - - - - - 55 C to + 150 C - - 600 V - - - 2.5V @ 15V, 47A - 143 A - PT - 230 nC 240 A 23ns/158ns 840µJ (on), 751µJ (off) - - - - 21.46 mm 16.26 mm 5.31 mm - - - -
                APT80GA60B
                APT80GA60B

                Microchip Technology
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                STMicroelectronics STGW40H120DF2
                Mfr. Тип
                STGW40H120DF2
                Anlielectronics Тип

                		STMicroelectronics
                Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3 Tab) TO-247 Tube
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 32 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Through Hole TO-247-3 - - - 38.000013g - - - - 1.2kV 2.1V - - - - - - - - - - - - - - - - - - - - - - - - - - - - 600V, 40A, 10 Ω, 15V - - - - - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - - EAR99 - - - - - - 468W - - - - - - STGW40 - - - - - Single - - Standard - 468W - - - - - 1.2kV 80A - 488 ns - 1200V - - - 2.6V @ 15V, 40A - - - Trench Field Stop - 187nC 160A 18ns/152ns 1mJ (on), 1.32mJ (off) - - - - - - - - - ROHS3 Compliant Lead Free
                  STGW40H120DF2
                  STGW40H120DF2

                  STMicroelectronics
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Infineon Technologies IKD15N60RFATMA1
                  Mfr. Тип
                  IKD15N60RFATMA1
                  Anlielectronics Тип

                  		Infineon Technologies
                  IGBT 600V 30A 250W PG-TO252-3
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 16 Weeks - Surface Mount Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 15A, 15 Ω, 15V - - - - - - -40°C~175°C TJ Cut Tape (CT) 2008 TrenchStop® e3 no Active 1 (Unlimited) - - EAR99 Tin (Sn) - - - - - - - - NOT SPECIFIED not_compliant - NOT SPECIFIED *KD15N60 - - - - - Single - - Standard - 250W - - Halogen Free - N-CHANNEL 600V 30A - 74ns - - - 250W - 2.5V @ 15V, 15A - - - Trench Field Stop - 90nC 45A 13ns/160ns 270μJ (on), 250μJ (off) 20V 5.7V - - - - - - - ROHS3 Compliant Contains Lead
                    IKD15N60RFATMA1
                    IKD15N60RFATMA1

                    Infineon Technologies
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Infineon Technologies IRG7PH46UD-EP
                    Mfr. Тип
                    IRG7PH46UD-EP
                    Anlielectronics Тип

                    		Infineon Technologies
                    IGBT 1200V 108A COPAK247
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 14 Weeks - Through Hole Through Hole TO-247-3 - 3 - - - SILICON - - 1.2kV 2V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - - 600V, 40A, 10 Ω, 15V - - - - - - -55°C~150°C TJ Tube 2013 - - - Obsolete 1 (Unlimited) 3 - EAR99 - - - - - - 390W - - NOT SPECIFIED - - NOT SPECIFIED - - - Not Qualified 60ns - Single - COLLECTOR Standard - 390W - POWER CONTROL - - N-CHANNEL 2V 40A - 140 ns TO-247AD 1200V - - 80 ns 2V @ 15V, 40A - - 680 ns Trench - 220nC 160A 45ns/410ns 2.61mJ (on), 1.85mJ (off) - 6V - 60ns - - - - No SVHC ROHS3 Compliant -
                      IRG7PH46UD-EP
                      IRG7PH46UD-EP

                      Infineon Technologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Infineon Technologies IHW50N65R5XKSA1
                      Mfr. Тип
                      IHW50N65R5XKSA1
                      Anlielectronics Тип

                      		Infineon Technologies
                      IGBT 650V 80A 282W TO247
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 16 Weeks - Through Hole Through Hole TO-247-3 - 3 - - - SILICON - - 650V - - - - - - - - - - - - - 1 - - - - - - - - - - - - - - - 400V, 25A, 8 Ω, 15V - - - - - - -40°C~175°C TJ Tube 2013 TrenchStop® e3 yes Active 1 (Unlimited) 3 - - Tin (Sn) - - - - - 282W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - Single - - Standard - 282W - POWER CONTROL Halogen Free - N-CHANNEL 650V 80A - 95 ns - - - - 51 ns 1.7V @ 15V, 50A - - 261 ns - - 230nC 150A 26ns/220ns 740μJ (on), 180μJ (off) - - - - - - - - - ROHS3 Compliant Lead Free
                        IHW50N65R5XKSA1
                        IHW50N65R5XKSA1

                        Infineon Technologies
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Microchip Technology APT54GA60BD30
                        Mfr. Тип
                        APT54GA60BD30
                        Anlielectronics Тип

                        		Microchip Technology
                        IGBT Transistors FG, IGBT-COMBI, 600V, TO-247View in Development Tools Selector
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - - - Through Hole TO-247-3 - - TO-247 [B] - - - APT54GA60 600 V - 2 V 96 A 96 A 96 A 1 +/- 100 nA - - - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole - - Tube - - - - - - 416 W Active - - Details - - 400V, 32A, 4.7Ohm, 15V - - - - 1.340411 oz - -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - - - - - - - - - - - - - - - Single - 416 - Standard - 416 W - - - - - - - - 55 C to + 150 C - - 600 V - - - 2.5V @ 15V, 32A - 96 - PT - 28 nC 161 A 17ns/112ns 534µJ (on), 466µJ (off) - - - - 4.69 mm 10.8 mm 15.49 mm - - - -
                          APT54GA60BD30
                          APT54GA60BD30

                          Microchip Technology
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Infineon Technologies IRGP4262DPBF
                          Mfr. Тип
                          IRGP4262DPBF
                          Anlielectronics Тип

                          		Infineon Technologies
                          IGBT 650V 60A 250W TO247AC
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - Through Hole Through Hole TO-247-3 - 3 - - - - - - 650V 1.7V - - - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 24A, 10 Ω, 15V - - - - - - -40°C~175°C TJ Tube 2007 - - - Obsolete 1 (Unlimited) - - EAR99 - - - - - - 250W - - - - - - - - - - 45ns - Single - - Standard - 250W - - - - N-CHANNEL 2.1V 60A - 170 ns - - - - - 2.1V @ 15V, 24A - - - - - 70nC 96A 24ns/73ns 520μJ (on), 240μJ (off) 20V 7.7V - 40ns - - - No No SVHC RoHS Compliant Lead Free
                            IRGP4262DPBF
                            IRGP4262DPBF

                            Infineon Technologies
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Infineon Technologies IHW40N60RFFKSA1
                            Mfr. Тип
                            IHW40N60RFFKSA1
                            Anlielectronics Тип

                            		Infineon Technologies
                            Trans IGBT Chip N-CH 600V 80A 3-Pin(3 Tab) TO-247
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 14 Weeks - Through Hole Through Hole TO-247-3 - 3 - - - SILICON - - - - - - - - - - - - - - - - 1 - - - - - - - - - - - - - - - 400V, 40A, 5.6 Ω, 15V - - - - - - -40°C~175°C TJ Tube 2008 TrenchStop® e3 yes Last Time Buy 1 (Unlimited) 3 - EAR99 Tin (Sn) - - - - - - - - NOT SPECIFIED - - NOT SPECIFIED - 3 - Not Qualified - - Single - - Standard - 305W - POWER CONTROL - - N-CHANNEL 600V 80A - - - - - - - 2.4V @ 15V, 40A - - 228 ns Trench - 220nC 120A -/175ns 560μJ (off) - - - - - - - - - ROHS3 Compliant Lead Free
                              IHW40N60RFFKSA1
                              IHW40N60RFFKSA1

                              Infineon Technologies
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Microchip Technology APT25GT120BRDQ2G
                              Mfr. Тип
                              APT25GT120BRDQ2G
                              Anlielectronics Тип

                              		Microchip Technology
                              IGBT Transistors FG, IGBT, 1200V, TO-247, RoHSView in Development Tools Selector
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 - Production (Last Updated: 2 months ago) Through Hole Through Hole TO-247-3 NO - TO-247 [B] 38.000013 g 3 SILICON APT25GT120 1.2 kV 1.2 kV 3.2 V 54 A 54 A 54 A 1 120 nA MICROSEMI CORP APT25GT120BRDQ2G - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole 1 150 °C Tube PLASTIC/EPOXY ROHS COMPLIANT, TO-247, 3 PIN RECTANGULAR FLANGE MOUNT Active TO-247 347 W Active NOT SPECIFIED 1.18 Details Yes - 800V, 25A, 5Ohm, 15V Thunderbolt IGBT - 186 ns 41 ns 1.340411 oz 1.2 kV -55°C ~ 150°C (TJ) Tube - Thunderbolt IGBT® e1 Yes - - - - EAR99 Tin/Silver/Copper (Sn/Ag/Cu) 150 °C -55 °C - - - 347 W SINGLE THROUGH-HOLE NOT SPECIFIED unknown 54 A - - 3 R-PSFM-T3 Not Qualified - Single Single 347 COLLECTOR Standard - 347 W - POWER CONTROL - - N-CHANNEL 1.2 kV 54 A - 55 C to + 150 C - TO-247 1200 V - 347 W - 3.7V @ 15V, 25A 54 A 54 A - NPT 1200 V 170 nC 75 A 14ns/150ns 930µJ (on), 720µJ (off) 30 V 6.5 V - - 5.31 mm 21.46 mm 16.26 mm No - - Lead Free
                                APT25GT120BRDQ2G
                                APT25GT120BRDQ2G

                                Microchip Technology
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ON Semiconductor NGTB15N120IHLWG
                                Mfr. Тип
                                NGTB15N120IHLWG
                                Anlielectronics Тип

                                		ON Semiconductor
                                ON SEMICONDUCTOR NGTB15N120IHLWG IGBT Single Transistor, 30 A, 1.8 V, 156 W, 1.2 kV, TO-247, 3 Pins
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 24 Weeks LAST SHIPMENTS (Last Updated: 1 week ago) - Through Hole TO-247-3 NO 3 - - - SILICON - - 1.2kV 1.8V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - - 600V, 15A, 15 Ω, 15V - - - - - - -55°C~150°C TJ Tube 2012 - e3 yes Obsolete 1 (Unlimited) 3 - EAR99 Tin (Sn) - - - - - 156W - - - - - - - 3 - - - - Single 250W COLLECTOR Standard - 156W - POWER CONTROL Halogen Free - N-CHANNEL 1.2kV 30A - - - 1200V - - - 2.2V @ 15V, 15A - - 440 ns - - 160nC 120A -/165ns 560μJ (off) 20V 6.5V - - 21.08mm 16.26mm 5.3mm No No SVHC RoHS Compliant Lead Free
                                  NGTB15N120IHLWG
                                  NGTB15N120IHLWG

                                  ON Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Microchip Technology APT40GR120S
                                  Mfr. Тип
                                  APT40GR120S
                                  Anlielectronics Тип

                                  		Microchip Technology
                                  IGBT Transistors FG, IGBT, 1200V, 40A, TO-268View in Development Tools Selector
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - - - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - - D3Pak - - - APT40GR120 1.2 kV - 3.2 V 88 A - 88 A 1 - - - - 30 V, + 30 V + 150 C Microchip Technology - 55 C SMD/SMT - - Tube - - - - - - 500 W Active - - Details - - 600V, 40A, 4.3Ohm, 15V - - - - 0.218699 oz - -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - - - - - - - - - - - - - - - Single - 500 - Standard - 500 W - - - - - - - - - - 1200 V - - - 3.2V @ 15V, 40A - 88 - NPT - 210 nC 160 A 22ns/163ns 1.38mJ (on), 906µJ (off) - - - - - - - - - - -
                                    APT40GR120S
                                    APT40GR120S

                                    Microchip Technology
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Infineon Technologies SKW25N120FKSA1
                                    Mfr. Тип
                                    SKW25N120FKSA1
                                    Anlielectronics Тип

                                    		Infineon Technologies
                                    INFINEON SKW25N120IGBT Single Transistor, 46 A, 3.6 V, 313 W, 1.2 kV, TO-247AC, 3 Pins
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - - Through Hole Through Hole TO-247-3 - 3 - - - SILICON - - 1.2kV - - - - - - - - - - - - - 1 - - - - - - - - - - - - - - - 800V, 25A, 22 Ω, 15V - - - - - - -55°C~150°C TJ Tube 2006 - e3 yes Last Time Buy 1 (Unlimited) 3 - EAR99 Tin (Sn) - - - - - 313W - - NOT SPECIFIED - - NOT SPECIFIED - 3 - Not Qualified - - Single 313W COLLECTOR Standard - - - POWER CONTROL - 40ns N-CHANNEL 1.2kV 46A - 90 ns TO-247AC 1200V - - 86 ns 3.6V @ 15V, 25A - - 862 ns NPT - 225nC 84A 45ns/730ns 3.7mJ - - - - - - - - - ROHS3 Compliant Lead Free
                                      SKW25N120FKSA1
                                      SKW25N120FKSA1

                                      Infineon Technologies
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                                      ON Semiconductor ISL9V2540S3ST
                                      Mfr. Тип
                                      ISL9V2540S3ST
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      Motor / Motion / Ignition Controllers & Drivers IGBT Ignition EcoSPARK N-Ch
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 4 Weeks - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - 3 - 1.31247g - SILICON - - 430V - - - - - - - - - - - - - 1 - - - - - - - - - - - - - - - 300V, 1k Ω, 5V - - - - - - -40°C~175°C TJ Tape & Reel (TR) 2017 EcoSPARK® e3 yes Active 1 (Unlimited) 2 - EAR99 Tin (Sn) - - - 8541.29.00.95 - 166.7W - GULL WING - - - - ISL9V2540 - R-PSSO-G2 - - - Single - COLLECTOR Logic - 166.7W 400V POWER CONTROL - - N-CHANNEL 1.8V 15.5A - - - - 430V - 2780 ns 1.8V @ 4V, 6A - - 6000 ns - - 15.1nC - -/3.64μs - 12V 2.2V - - 4.83mm 10.67mm 9.65mm No - ROHS3 Compliant -
                                        ISL9V2540S3ST
                                        ISL9V2540S3ST

                                        ON Semiconductor
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                                        Infineon Technologies IRG4PSH71KDPBF
                                        Mfr. Тип
                                        IRG4PSH71KDPBF
                                        Anlielectronics Тип

                                        		Infineon Technologies
                                        IGBT 1200V 78A 350W SUPER247
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 7 Weeks - Through Hole Through Hole TO-274AA - 3 - - - SILICON - - 1.2kV 2.97V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - - 800V, 42A, 5 Ω, 15V - - - - - - -55°C~150°C TJ Bulk 1999 - e3 - Last Time Buy 1 (Unlimited) 3 Through Hole EAR99 Matte Tin (Sn) - with Nickel (Ni) barrier - - LOW CONDUCTION LOSS - 1.2kV 350W - - 250 - 78A 30 - - - - - - Single 350W COLLECTOR Standard - - - MOTOR CONTROL - 84ns N-CHANNEL 3.9V 78A - 107 ns - 1200V - - 152 ns 3.9V @ 15V, 42A - - 660 ns - - 410nC 156A 67ns/230ns 5.68mJ (on), 3.23mJ (off) 20V 6V - 190ns 20.8mm 16.0782mm 5.3mm No No SVHC ROHS3 Compliant Lead Free
                                          IRG4PSH71KDPBF
                                          IRG4PSH71KDPBF

                                          Infineon Technologies
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                                          Discrete Semiconductor Products

                                          Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: IXLF19N250A,APT80GA60LD40,NGTB60N65FL2WG,STGF19NC60KD,STGP15H60DF.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - IGBTs - Single has 7211 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.