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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Base Product Number Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Continuous Collector Current Ic Max Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Gate-Emitter Leakage Current Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Styles Number of Elements Package Pd - Power Dissipation Product Status RoHS SwitchingFrequency Test Conditions Tradename Turn Off Delay Time Unit Weight Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Configuration Element Configuration Power Dissipation Case Connection Input Type Turn On Delay Time Power - Max Transistor Application Halogen Free Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Collector Emitter Voltage (VCEO) Max Collector Current Operating Temperature Range Reverse Recovery Time Continuous Drain Current (ID) JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Drain to Source Breakdown Voltage Max Breakdown Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Continuous Collector Current Turn Off Time-Nom (toff) IGBT Type Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor SGF23N60UFTU
Mfr. Тип
SGF23N60UFTU
Anlielectronics Тип

ON Semiconductor
Trans IGBT Chip N-CH 600V 23A 3-Pin(3 Tab) TO-3PF Rail
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 8 Weeks ACTIVE (Last Updated: 1 week ago) - Through Hole Through Hole TO-3P-3 Full Pack - - - 6.962g SILICON - - 600V 2.1V - - - - - - - - - - 1 - - - - - 300V, 12A, 23 Ω, 15V - - - -55°C~150°C TJ Tube 2013 - e3 yes Active 1 (Unlimited) 3 EAR99 Tin (Sn) - - LOW CONDUCTION LOSS, HIGH SPEED SWITCHING 8541.29.00.95 600V 75W - - - - 12A - SG*23N60 - R-PSFM-T3 - - Single 75W ISOLATED Standard - - MOTOR CONTROL - - - N-CHANNEL 600V 23A - - - - - - - 55 ns 2.6V @ 15V, 12A - 320 ns - - 92A 17ns/60ns 115μJ (on), 135μJ (off) 20V 6.5V 250ns - - - No - ROHS3 Compliant Lead Free
    SGF23N60UFTU
    SGF23N60UFTU

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ROHM Semiconductor RGTH40TS65DGC11
    Mfr. Тип
    RGTH40TS65DGC11
    Anlielectronics Тип

    		ROHM Semiconductor
    IGBT 650V 40A 144W TO-247N
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 17 Weeks - - Through Hole Through Hole TO-247-3 - 3 - 38.000013g SILICON - - 650V 1.6V - - - - - - - - - - 1 - - - - - 400V, 20A, 10 Ω, 15V - - - -40°C~175°C TJ Tube 2014 - - yes Active 1 (Unlimited) 3 EAR99 - - - - - - 144W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - Single - - Standard - 144W POWER CONTROL - - - N-CHANNEL 650V 40A - 58 ns - - - - - 47 ns 2.1V @ 15V, 20A 20A 141 ns Trench Field Stop 40nC 80A 22ns/73ns - - - - - - - - Unknown ROHS3 Compliant -
      RGTH40TS65DGC11
      RGTH40TS65DGC11

      ROHM Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Infineon Technologies IRG4RC10UDTRLP
      Mfr. Тип
      IRG4RC10UDTRLP
      Anlielectronics Тип

      		Infineon Technologies
      IGBT 600V 8.5A 38W DPAK
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 17 Weeks - - - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 YES - - - SILICON - - - - - - 8.5A - - - - - - - 1 - - - - - 480V, 5A, 100 Ω, 15V - - - -55°C~150°C TJ Tape & Reel (TR) 2001 - e3 - Obsolete 1 (Unlimited) 2 EAR99 Matte Tin (Sn) - with Nickel (Ni) barrier - - LOW CONDUCTION LOSS - - - SINGLE GULL WING 260 compliant - 30 IRG4RC10UDPBF - R-PSSO-G2 Not Qualified SINGLE WITH BUILT-IN DIODE - - COLLECTOR Standard - 38W POWER CONTROL - - - N-CHANNEL - - - 28ns - TO-252AA 600V - - 56 ns 2.6V @ 15V, 5A - 345 ns - 15nC 34A 40ns/87ns 140μJ (on), 120μJ (off) - - - - - - - - RoHS Compliant -
        IRG4RC10UDTRLP
        IRG4RC10UDTRLP

        Infineon Technologies
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        STMicroelectronics STGB5H60DF
        Mfr. Тип
        STGB5H60DF
        Anlielectronics Тип

        		STMicroelectronics
        TRENCH GATE FIELD-STOP IGBT, H S
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 20 Weeks ACTIVE (Last Updated: 8 months ago) - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - - - - - - - 600V - - - - - - - - - - - - - - - - - 400V, 5A, 47 Ω, 15V - - - -55°C~175°C TJ Tape & Reel (TR) - - - - Active 1 (Unlimited) - EAR99 - - - - - - 88W - - NOT SPECIFIED - - NOT SPECIFIED STGB5 - - - - - - - Standard - 88W - - - - - 1.95V 10A - 134.5 ns - - - - 600V - 1.95V @ 15V, 5A - - Trench Field Stop 43nC 20A 30ns/140ns 56μJ (on), 78.5μJ (off) - - - - - - - - ROHS3 Compliant -
          STGB5H60DF
          STGB5H60DF

          STMicroelectronics
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Atmel (Microchip Technology) APT80GA90LD40
          Mfr. Тип
          APT80GA90LD40
          Anlielectronics Тип

          		Atmel (Microchip Technology)
          IGBT Transistors FG, IGBT-COMBI, 900V, TO-264View in Development Tools Selector
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 - - - - - TO-247-3 - - - - - - 900 V - 2.5 V 145 A - - 1 - - 30 V, + 30 V + 150 C - - 55 C Through Hole - - 625 W - Details - - - - 1.340411 oz - Tube - - - - - - - - - - - - - - - - - - - - - - - - - Single - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
            APT80GA90LD40
            APT80GA90LD40

            Atmel (Microchip Technology)
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ROHM Semiconductor RGTH60TS65DGC11
            Mfr. Тип
            RGTH60TS65DGC11
            Anlielectronics Тип

            		ROHM Semiconductor
            IGBT 650V 58A 194W TO-247N
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 17 Weeks - - Through Hole Through Hole TO-247-3 - 3 - - SILICON - - 650V 1.6V - - - - - - - - - - 1 - - - - - 400V, 30A, 10 Ω, 15V - - - -40°C~175°C TJ Tube 2014 - - yes Active 1 (Unlimited) 3 EAR99 - - - - - - 194W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - Single - - Standard - 194W POWER CONTROL - - - N-CHANNEL 650V 58A - 58 ns - - - - - 67 ns 2.1V @ 15V, 30A 30A 179 ns Trench Field Stop 58nC 120A 27ns/105ns - - - - - - - - Unknown ROHS3 Compliant -
              RGTH60TS65DGC11
              RGTH60TS65DGC11

              ROHM Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              ON Semiconductor NGTB40N135IHRWG
              Mfr. Тип
              NGTB40N135IHRWG
              Anlielectronics Тип

              		ON Semiconductor
              Trans IGBT Chip N-CH 1.35KV 120A 3-Pin(3 Tab) TO-247 Rail
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 4 Weeks ACTIVE (Last Updated: 1 day ago) - Through Hole Through Hole TO-247-3 - 3 - 6.500007g - - - 1.35kV 2.4V - - - - - - - - - - - - - - - - 600V, 40A, 10 Ω, 15V - - - -40°C~175°C TJ Tube 2006 - e3 yes Active 1 (Unlimited) - EAR99 Tin (Sn) - - - - - 394W - - NOT SPECIFIED - - NOT SPECIFIED - 3 - - - Single - - Standard - 394W - Halogen Free - - N-CHANNEL 1.35kV 80A - - - - 1350V - - - 2.7V @ 15V, 40A - - Trench Field Stop 234nC 120A -/250ns 1.3mJ (off) 20V 6.5V - 21.4mm 16.25mm 5.3mm - No SVHC ROHS3 Compliant Lead Free
                NGTB40N135IHRWG
                NGTB40N135IHRWG

                ON Semiconductor
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Microchip Technology APT64GA90LD30
                Mfr. Тип
                APT64GA90LD30
                Anlielectronics Тип

                		Microchip Technology
                IGBT Transistors FG, IGBT-COMBI, 900V, TO-264View in Development Tools Selector
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - Production (Last Updated: 2 months ago) - Through Hole Through Hole TO-264-3 - - TO-264 [L] 10.6 g - APT64GA90 900 V 900 V 2.5 V 117 A 117 A 117 A 1 100 nA - 20 V, + 20 V + 150 C Microchip Technology - 55 C Through Hole - Tube 500 W Active Details - 600V, 38A, 4.7Ohm, 15V POWER MOS 8 - 0.373904 oz -55°C ~ 150°C (TJ) Tube - POWER MOS 8™ - - - - - - - 150 °C -55 °C - - - 500 W - - - - - - - - - - Single Single 500 - Standard - 500 W - - - - - 900 V 117 A - 55 C to + 150 C - - - 900 V - - - 3.1V @ 15V, 38A 117 A - PT 162 nC 193 A 18ns/131ns 1192µJ (on), 1088µJ (off) - - - 5.21 mm 26.49 mm 20.5 mm No - - -
                  APT64GA90LD30
                  APT64GA90LD30

                  Microchip Technology
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor FGH15T120SMD-F155
                  Mfr. Тип
                  FGH15T120SMD-F155
                  Anlielectronics Тип

                  		ON Semiconductor
                  IGBT 1200V 30A 333W TO247-3
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 6 Weeks ACTIVE (Last Updated: 4 days ago) - Through Hole Through Hole TO-247-3 - 3 - 6.39g - - - 1.2kV 1.9V - - - - - - - - - - - - - - - - 600V, 15A, 34 Ω, 15V - - - -55°C~175°C TJ Tube 2013 - - yes Active 1 (Unlimited) - - - - - - - - 333W - - - - - - - - - - - Single 333W - Standard - - - - - - N-CHANNEL 1.2kV 30A - 72ns - - 1200V - - - 2.4V @ 15V, 15A - - Trench Field Stop 128nC 60A 32ns/490ns 1.15mJ (on), 460μJ (off) 25V 7.5V - - - - No - ROHS3 Compliant -
                    FGH15T120SMD-F155
                    FGH15T120SMD-F155

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    ON Semiconductor FGP10N60UNDF
                    Mfr. Тип
                    FGP10N60UNDF
                    Anlielectronics Тип

                    		ON Semiconductor
                    IGBT Transistors 600V 10A NPT IGBT
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 4 Weeks ACTIVE (Last Updated: 1 week ago) - Through Hole Through Hole TO-220-3 - 3 - 1.8g SILICON - - 600V 2.3V - - - - - - - - - - 1 - - - - - 400V, 10A, 10 Ω, 15V - 55 ns - -55°C~150°C TJ Tube 2013 - e3 yes Active 1 (Unlimited) 3 EAR99 Tin (Sn) - - - 8541.29.00.95 - 139W - - - - - - - - - - - Single 139W - Standard 8.1 ns - MOTOR CONTROL - - - N-CHANNEL 600V 20A - 37.7 ns - TO-220AB - - - 15.4 ns 2.45V @ 15V, 10A - 89.3 ns NPT 37nC 30A 8ns/52.2ns 150μJ (on), 50μJ (off) 20V 8.5V 24.8ns 16.51mm 10.67mm 4.83mm No - ROHS3 Compliant Lead Free
                      FGP10N60UNDF
                      FGP10N60UNDF

                      ON Semiconductor
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      STMicroelectronics STGW40NC60KD
                      Mfr. Тип
                      STGW40NC60KD
                      Anlielectronics Тип

                      		STMicroelectronics
                      Trans IGBT Chip N-CH 600V 70A 3-Pin(3 Tab) TO-247 Tube
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 8 Weeks ACTIVE (Last Updated: 8 months ago) - Through Hole Through Hole TO-247-3 - - - - SILICON - - 600V - - - - - - - - - - - 1 - - - - - 480V, 30A, 10 Ω, 15V - 164 ns - -55°C~150°C TJ Tube - PowerMESH™ e3 - Active 1 (Unlimited) 3 EAR99 Tin (Sn) - - - - - 250W - - - - - - STGW40 3 R-PSFM-T3 - - Single 250W - Standard 46 ns - POWER CONTROL - - - N-CHANNEL 600V 70A - 45 ns - - - - - 64 ns 2.7V @ 15V, 30A - 338 ns - 135nC 220A 46ns/164ns 595μJ (on), 716μJ (off) 20V 6.5V - - - - No - ROHS3 Compliant Lead Free
                        STGW40NC60KD
                        STGW40NC60KD

                        STMicroelectronics
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        STMicroelectronics STGP10NB60S
                        Mfr. Тип
                        STGP10NB60S
                        Anlielectronics Тип

                        		STMicroelectronics
                        IGBT 600V 29A 80W TO220
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 8 Weeks ACTIVE (Last Updated: 8 months ago) - Through Hole Through Hole TO-220-3 - 3 - 6.000006g SILICON - - 600V 1.7V - - - - - - - - - - 1 - - - - - 480V, 10A, 1k Ω, 15V - - - -55°C~150°C TJ Tube - PowerMESH™ e3 - Active 1 (Unlimited) 3 EAR99 Matte Tin (Sn) - annealed - - - - 600V 80W - - - - 10A - STGP10 3 - - - Single 80W - Standard 7 μs - POWER CONTROL - - 600V N-CHANNEL 600V 29A - - 10A TO-220AB - - - 1160 ns 1.75V @ 15V, 10A 10A 3100 ns - 33nC 80A 700ns/1.2μs 600μJ (on), 5mJ (off) 20V 5V - 9.15mm 10.4mm 4.6mm No No SVHC ROHS3 Compliant Lead Free
                          STGP10NB60S
                          STGP10NB60S

                          STMicroelectronics
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          STMicroelectronics STGP10NB60SD
                          Mfr. Тип
                          STGP10NB60SD
                          Anlielectronics Тип

                          		STMicroelectronics
                          Trans IGBT Chip N-CH 600V 29A 3-Pin(3 Tab) TO-220 Tube
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 8 Weeks ACTIVE (Last Updated: 8 months ago) Tin Through Hole Through Hole TO-220-3 - - - 6.000006g SILICON - - 600V - - - - - - - - - - - 1 - - - - - 480V, 10A, 1k Ω, 15V - 1.2 μs - -55°C~150°C TJ Tube - PowerMESH™ e3 - Active 1 (Unlimited) 3 EAR99 - - - - - 600V 80W - - - - 20A - STGP10 3 R-PSFM-T3 - - Single 3.5W COLLECTOR Standard 700 ns 80W POWER CONTROL - 460ns - N-CHANNEL 600V 29A - 37 ns 10A TO-220AB - 600V - 1160 ns 1.75V @ 15V, 10A - 3100 ns - 33nC 80A 700ns/1.2μs 600μJ (on), 5mJ (off) 20V 5V - 9.15mm 10.4mm 4.6mm No - ROHS3 Compliant Lead Free
                            STGP10NB60SD
                            STGP10NB60SD

                            STMicroelectronics
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Infineon Technologies IKD03N60RFATMA1
                            Mfr. Тип
                            IKD03N60RFATMA1
                            Anlielectronics Тип

                            		Infineon Technologies
                            Trans IGBT Chip N-CH 600V 5A 3-Pin(2 Tab) TO-252 T/R
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 17 Weeks - - Surface Mount Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - 3 - - SILICON - - 600V - - - 6.5A - - - - - - - 1 - - - - -30kHz 400V, 2.5A, 68 Ω, 15V - - - -40°C~175°C TJ Tape & Reel (TR) 2012 TrenchStop™ e3 no Active 1 (Unlimited) 2 EAR99 Tin (Sn) - - - - - 53.6W - GULL WING NOT SPECIFIED not_compliant - NOT SPECIFIED - 3 R-PSSO-G2 - - Single - COLLECTOR Standard - - POWER CONTROL Halogen Free - - N-CHANNEL 2.5V 5A - 31 ns - - - - 600V 18 ns 2.5V @ 15V, 2.5A - 265 ns Trench Field Stop 17.1nC 7.5A 10ns/128ns 50μJ (on), 40μJ (off) - - - 2.41mm 6.73mm 6.22mm - - ROHS3 Compliant -
                              IKD03N60RFATMA1
                              IKD03N60RFATMA1

                              Infineon Technologies
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              STMicroelectronics STGP3NC120HD
                              Mfr. Тип
                              STGP3NC120HD
                              Anlielectronics Тип

                              		STMicroelectronics
                              Trans IGBT Chip N-CH 1.2KV 14A 3-Pin(3 Tab) TO-220 Tube
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 8 Weeks ACTIVE (Last Updated: 7 months ago) - Through Hole Through Hole TO-220-3 - - - - SILICON - - 1.2kV 2.2V - - - - - - - - - - 1 - - - - - 800V, 3A, 10 Ω, 15V - - - -55°C~150°C TJ Tube - PowerMESH™ e3 - Active 1 (Unlimited) 3 EAR99 Tin (Sn) - - - - - 75W - - - - - - STGP3 3 R-PSFM-T3 - - Single 75W COLLECTOR Standard - - GENERAL PURPOSE SWITCHING - - - N-CHANNEL 1.2kV 14A - 51 ns - - 1200V - 1.2kV 18.5 ns 2.8V @ 15V, 3A - 680 ns - 24nC 20A 15ns/118ns 236μJ (on), 290μJ (off) 20V 5V - - - - No - ROHS3 Compliant -
                                STGP3NC120HD
                                STGP3NC120HD

                                STMicroelectronics
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ON Semiconductor FGL40N120ANTU
                                Mfr. Тип
                                FGL40N120ANTU
                                Anlielectronics Тип

                                		ON Semiconductor
                                IGBT 1200V 64A 500W TO264
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 4 Weeks ACTIVE (Last Updated: 6 days ago) - Through Hole Through Hole TO-264-3, TO-264AA - 3 - 6.756g SILICON - - 1.2kV 3.2V - - - - - - - - - - 1 - - - - - 600V, 40A, 5 Ω, 15V - 110 ns - -55°C~150°C TJ Tube 2007 - e3 yes Not For New Designs 1 (Unlimited) 3 EAR99 Tin (Sn) - - LOW CONDUCTION LOSS 8541.29.00.95 - 500W - - - - - - - - - - - Single 500mW - Standard 15 ns 500W MOTOR CONTROL - 20ns - N-CHANNEL 1.2kV 64A - - - - 1200V - - 45 ns 3.2V @ 15V, 40A - 165 ns NPT 220nC 160A 15ns/110ns 2.3mJ (on), 1.1mJ (off) - - - - - - No No SVHC ROHS3 Compliant Lead Free
                                  FGL40N120ANTU
                                  FGL40N120ANTU

                                  ON Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ON Semiconductor NGTB30N120IHLWG
                                  Mfr. Тип
                                  NGTB30N120IHLWG
                                  Anlielectronics Тип

                                  		ON Semiconductor
                                  Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3 Tab) TO-247 Rail
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - LAST SHIPMENTS (Last Updated: 4 days ago) - - Through Hole TO-247-3 NO 3 - 6.500007g - - - 1.2kV 1.75V - - - - - - - - - - - - - - - - 600V, 30A, 10 Ω, 15V - - - -55°C~150°C TJ Tube 2002 - e3 yes Obsolete 1 (Unlimited) - EAR99 Tin (Sn) - - - - - 260W - - NOT SPECIFIED - - NOT SPECIFIED - 3 - - - Single - - Standard - 260W - Halogen Free - - N-CHANNEL 1.2kV 60A - - - - 1200V - - - 2.2V @ 15V, 30A - - Trench Field Stop 420nC 320A -/360ns 1mJ (off) 20V 6.5V - 21.08mm 16.26mm 5.3mm - No SVHC RoHS Compliant Lead Free
                                    NGTB30N120IHLWG
                                    NGTB30N120IHLWG

                                    ON Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    ON Semiconductor NGTB40N120SWG
                                    Mfr. Тип
                                    NGTB40N120SWG
                                    Anlielectronics Тип

                                    		ON Semiconductor
                                    ON SEMICONDUCTOR NGTB40N120SWG IGBT Single Transistor, 80 A, 2 V, 535 W, 1.2 kV, TO-247, 3 Pins
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 18 Weeks LAST SHIPMENTS (Last Updated: 4 days ago) - Through Hole Through Hole TO-247-3 - 3 - - - - - 1.2kV 2V - - - - - - - - - - - - - - - - 600V, 40A, 10 Ω, 15V - - - -55°C~175°C TJ Tube 2014 - e3 yes Obsolete 1 (Unlimited) - EAR99 Tin (Sn) - - - - - 535W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - Single - - Standard - 535W - - - - - 2.4V 80A - 240 ns - - 1200V - - - 2.4V @ 15V, 40A - - Trench 313nC 200A 116ns/286ns 3.4mJ (on), 1.1mJ (off) - - - 21.4mm 16.25mm 5.3mm - No SVHC RoHS Compliant Lead Free
                                      NGTB40N120SWG
                                      NGTB40N120SWG

                                      ON Semiconductor
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Microchip Technology APT50GN120L2DQ2G
                                      Mfr. Тип
                                      APT50GN120L2DQ2G
                                      Anlielectronics Тип

                                      		Microchip Technology
                                      IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHSView in Development Tools Selector
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - - - - Through Hole TO-264-3 - - - - - APT50GN120 1.2 kV - 1.7 V 134 A 134 A 134 A 1 600 nA - 20 V, + 20 V + 150 C Microchip Technology - 55 C Through Hole - Tube 543 W Active Details - 800V, 50A, 2.2Ohm, 15V - - 0.373904 oz -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - - - - - - - - - - - - - Single - 543 - Standard - 543 W - - - - - - - - 55 C to + 150 C - - - 1200 V - - - 2.1V @ 15V, 50A 134 A - NPT, Trench Field Stop 315 nC 150 A 28ns/320ns 4495µJ (off) - - - 5.21 mm 26.49 mm 20.5 mm - - - -
                                        APT50GN120L2DQ2G
                                        APT50GN120L2DQ2G

                                        Microchip Technology
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                                        ON Semiconductor TIG056BF-1E
                                        Mfr. Тип
                                        TIG056BF-1E
                                        Anlielectronics Тип

                                        		ON Semiconductor
                                        Trans IGBT Chip N-CH 430V 240A 3-Pin TO-220F-3FS Bulk
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                                          		 10 Weeks ACTIVE (Last Updated: 2 days ago) - - Through Hole TO-220-3 Full Pack NO 3 - - - - - 430V - - - - - - - - - - - - - - - - - 320V, 240A, 10 Ω, 15V - - - 150°C TJ Tube 2013 - e3 yes Active 1 (Unlimited) - EAR99 Tin (Sn) - - - - - 30W - - - - - - - 3 - - - Single - - Standard - 30W - - - - N-CHANNEL 5V 240A - - - - - - - - 5V @ 15V, 240A - - - - - 46ns/140ns - - 5V - - - - No - ROHS3 Compliant Lead Free
                                          TIG056BF-1E
                                          TIG056BF-1E

                                          ON Semiconductor
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