[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Mount Mounting Type Package / Case Number of Pins Supplier Device Package Weight Transistor Element Material Base Product Number Brand Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Continuous Collector Current Ic Max Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Ihs Manufacturer Manufacturer Manufacturer Part Number Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Styles Number of Elements Package Package Description Part # Aliases Part Life Cycle Code Pd - Power Dissipation Product Status Risk Rank RoHS Test Conditions Turn Off Delay Time Unit Weight Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Subcategory Voltage - Rated DC Max Power Dissipation Technology Terminal Position Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Number of Outputs Qualification Status Rise Time-Max Configuration Element Configuration Power Dissipation Case Connection Input Type Turn On Delay Time Power - Max Clamping Voltage Transistor Application Rise Time Polarity/Channel Type Product Type Collector Emitter Voltage (VCEO) Max Collector Current Reverse Recovery Time JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Input Capacitance Max Breakdown Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Continuous Collector Current Turn Off Time-Nom (toff) IGBT Type Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Reverse Recovery Time (trr) Fall Time-Max (tf) Product Category Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
Infineon Technologies IKP20N60TAHKSA1
Mfr. Тип
IKP20N60TAHKSA1
Anlielectronics Тип

Infineon Technologies
IGBT 600V 40A 166W TO220-3-1
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 16 Weeks - Through Hole Through Hole TO-220-3 - - - SILICON - - - 600V - - - - - - - - - - - - - 1 - - - - - - - - 400V, 20A, 12 Ω, 15V - - -40°C~175°C TJ Tube 2004 TrenchStop® - yes Not For New Designs 1 (Unlimited) 3 - - - - - - - - 166W - SINGLE NOT SPECIFIED - - NOT SPECIFIED - - AEC-Q101 R-PSFM-T3 - - - SINGLE WITH BUILT-IN DIODE - - COLLECTOR Standard - 166W - POWER CONTROL - N-CHANNEL - 2.05V 40A 41 ns TO-220AB - - - 35 ns 2.05V @ 15V, 20A - 287 ns Trench Field Stop 120nC 60A 18ns/199ns 770μJ - - - - - - - - - - ROHS3 Compliant -
    IKP20N60TAHKSA1
    IKP20N60TAHKSA1

    Infineon Technologies
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    STMicroelectronics STGW45HF60WD
    Mfr. Тип
    STGW45HF60WD
    Anlielectronics Тип

    		STMicroelectronics
    Trans IGBT Chip N-CH 600V 70A 3-Pin(3 Tab) TO-247 Tube
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - - Through Hole Through Hole TO-247-3 3 - 6.500007g SILICON - - - 600V 1.9V - - - - - - - - - - - - 1 - - - - - - - - 400V, 30A, 6.8 Ω, 15V 145 ns - -55°C~150°C TJ Tube - - - - Obsolete 1 (Unlimited) 3 EAR99 - - - LOW CONDUCTION LOSS - - - 250W - - - - - - STGW45 3 - - - - - - Single - - Standard 30 ns 250W - POWER CONTROL - N-CHANNEL - 600V 70A 55 ns - - - - 44 ns 2.5V @ 15V, 30A - 250 ns - 160nC 150A 30ns/145ns 300μJ (on), 330μJ (off) 20V 5.75V - - - 24.45mm 15.75mm 5.15mm No - ROHS3 Compliant Lead Free
      STGW45HF60WD
      STGW45HF60WD

      STMicroelectronics
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      STMicroelectronics STGW30M65DF2
      Mfr. Тип
      STGW30M65DF2
      Anlielectronics Тип

      		STMicroelectronics
      TRENCH GATE FIELD-STOP IGBT M SE
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 30 Weeks ACTIVE (Last Updated: 8 months ago) Through Hole Through Hole TO-247-3 - - - - - - - 650V - - - - - - - - - - - - - - - - - - - - - - 400V, 30A, 10 Ω, 15V - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - EAR99 - - - - - - - 258W - - NOT SPECIFIED - - NOT SPECIFIED STGW30 - - - - - - - - - - Standard - 258W - - - - - 2V 60A 140 ns - - - - - 2V @ 15V, 30A - - Trench Field Stop 80nC 120A 31.6ns/115ns 300μJ (on), 960μJ (off) - - - - - - - - - - ROHS3 Compliant -
        STGW30M65DF2
        STGW30M65DF2

        STMicroelectronics
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Toshiba Semiconductor and Storage GT50J341,Q
        Mfr. Тип
        GT50J341,Q
        Anlielectronics Тип

        		Toshiba Semiconductor and Storage
        PB-F IGBT / TRANSISTOR TO-3PN IC
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 12 Weeks - - Through Hole TO-3P-3, SC-65-3 - TO-3P(N) - - - Toshiba 600 V - 1.6 V 50 A 100 A 50 A 50 TOSHIBA CORP Toshiba GT50J341,Q - 25 V, + 25 V + 175 C Toshiba Semiconductor and Storage - 55 C Through Hole - Tube , - Active 200 W Active 5.67 Details - - - 175°C (TJ) Tube - - - - - - - - - - - - - IGBTs - - Si - - unknown - - - - - - - - - Single - - - Standard - 200 W - - - - IGBT Transistors - - - - 600 V - - - 2.2V @ 15V, 50A - - - - 100 A - - - - - - IGBT Transistors - - - - - - -
          GT50J341,Q
          GT50J341,Q

          Toshiba Semiconductor and Storage
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          ON Semiconductor FGI3236-F085
          Mfr. Тип
          FGI3236-F085
          Anlielectronics Тип

          		ON Semiconductor
          Trans IGBT Chip N-CH 330V 44A 3-Pin(3 Tab) TO-262 Tube
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 11 Weeks - Through Hole Through Hole TO-262-3 Long Leads, I2Pak, TO-262AA - - 2.084g SILICON - - - 360V - - - - - - - - - - - - - 1 - - - - - - - - 300V, 1k Ω, 5V - - -40°C~175°C TJ Tube 2017 Automotive, AEC-Q101, EcoSPARK® e3 yes Active 1 (Unlimited) 3 - MATTE TIN - - - - - - 187W - - - - - - - - - R-PSIP-T3 1 - 7000ns - Single - COLLECTOR Logic - 187W 360V AUTOMOTIVE IGNITION - N-CHANNEL - 1.32V 44A - - - - - 2350 ns 1.4V @ 4V, 6A - 7040 ns - 20nC - -/5.4μs - - 2.2V - - - - - - No - ROHS3 Compliant Lead Free
            FGI3236-F085
            FGI3236-F085

            ON Semiconductor
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor FGA40T65SHDF
            Mfr. Тип
            FGA40T65SHDF
            Anlielectronics Тип

            		ON Semiconductor
            IGBT 650V 80A 268W TO-3PN
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 6 Weeks ACTIVE (Last Updated: 1 week ago) Through Hole Through Hole TO-3P-3, SC-65-3 - - 6.401g - - - - 650V 1.81V - - - - - - - - - - - - - - - - - - - - - 400V, 40A, 6 Ω, 15V - - -55°C~175°C TJ Tube 2016 - - yes Active 1 (Unlimited) - EAR99 - - - - 8541.29.00.95 - - 268W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - - - - - Standard - 268W - - - - - 1.81V 80A 101 ns - - - - - 1.81V @ 15V, 40A - - Trench Field Stop 68nC 120A 18ns/64ns 1.22mJ (on), 440μJ (off) - - - - - - - - - - ROHS3 Compliant -
              FGA40T65SHDF
              FGA40T65SHDF

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              STMicroelectronics STGB10M65DF2
              Mfr. Тип
              STGB10M65DF2
              Anlielectronics Тип

              		STMicroelectronics
              STMICROELECTRONICS STGB10M65DF2 IGBT Single Transistor, 20 A, 1.55 V, 115 W, 650 V, TO-263, 3 Pins
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 30 Weeks ACTIVE (Last Updated: 7 months ago) Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 3 - - - - - - 650V 1.55V - - - - - - - - - - - - - - - - - - - - - 400V, 10A, 22 Ω, 15V - - -55°C~175°C TJ Cut Tape (CT) - - - - Active 1 (Unlimited) - EAR99 - - - - - - - 115W - - NOT SPECIFIED - - NOT SPECIFIED STGB10 - - - - - - - Single - - Standard - 115W - - - - - 2V 20A 96 ns - - - 650V - 2V @ 15V, 10A - - Trench Field Stop 28nC 40A 19ns/91ns 120μJ (on), 270μJ (off) - - - - - - - - - No SVHC ROHS3 Compliant -
                STGB10M65DF2
                STGB10M65DF2

                STMicroelectronics
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Renesas Electronics America Inc RJH3047DPK-80#T2
                Mfr. Тип
                RJH3047DPK-80#T2
                Anlielectronics Тип

                		Renesas Electronics America Inc
                IGBT
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - - - - - - - - - - - - - - - - - - - - - - - Renesas Electronics America Inc - - - Bulk - - - - Active - - - - - - - - * - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                  RJH3047DPK-80#T2
                  RJH3047DPK-80#T2

                  Renesas Electronics America Inc
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor FGPF4533
                  Mfr. Тип
                  FGPF4533
                  Anlielectronics Тип

                  		ON Semiconductor
                  IGBT 330V 28.4W TO220-3FP
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - - Through Hole Through Hole TO-220-3 Full Pack 3 - 2.27g - - - - 330V - - - - - - - - - - - - - - - - - - - - - - - - - - Tube - - e3 yes Obsolete 1 (Unlimited) - EAR99 MATTE TIN 150°C -55°C - - - - 28.4W - - - - - - - - - - - - - - Single - - Standard - - - - - - - 330V 200mA - - - - - - 1.8V @ 15V, 50A - - Trench 44nC 200A - - - - - - - - - - No - RoHS Compliant -
                    FGPF4533
                    FGPF4533

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Infineon Technologies AUIRGP35B60PD-E
                    Mfr. Тип
                    AUIRGP35B60PD-E
                    Anlielectronics Тип

                    		Infineon Technologies
                    IGBT 600V 60A 308W TO247AD
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 14 Weeks - Through Hole Through Hole TO-247-3 3 - - SILICON - - - 600V 2.15V - - - - - - - - - - - - 1 - - - - - - - - 390V, 22A, 3.3 Ω, 15V - - -55°C~150°C TJ Tube 2011 - - - Obsolete 1 (Unlimited) 3 EAR99 - - - HIGH RELIABILITY - - - 308W - - - - - - - - - - - - 11ns - Single 308W COLLECTOR Standard - - - POWER CONTROL - N-CHANNEL - 2.55V 60A 42 ns TO-247AD - - - 34 ns 2.55V @ 15V, 35A - 142 ns NPT 55nC 120A 26ns/110ns 220μJ (on), 215μJ (off) 20V 5V - 16ns - 20.7mm 15.87mm 5.31mm No No SVHC RoHS Compliant Lead Free
                      AUIRGP35B60PD-E
                      AUIRGP35B60PD-E

                      Infineon Technologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      IXYS IXGH48N60C3D1
                      Mfr. Тип
                      IXGH48N60C3D1
                      Anlielectronics Тип

                      		IXYS
                      IGBT 600V 75A 300W TO247AD
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 30 Weeks - Through Hole Through Hole TO-247-3 3 - 6.500007g SILICON - - - 600V 2.5V - - - - - - - - - - - - 1 - - - - - - - - 400V, 30A, 3 Ω, 15V - - -55°C~150°C TJ Tube 2009 GenX3™ e1 yes Active 1 (Unlimited) 3 - Tin/Silver/Copper (Sn/Ag/Cu) - - AVALANCHE RATED - - - 300W - - NOT SPECIFIED - - NOT SPECIFIED IXG*48N60 3 - - - Not Qualified - - Single - COLLECTOR Standard - 300W - POWER CONTROL - N-CHANNEL - 600V 75A 25ns - - 1.96nF - 45 ns 2.5V @ 15V, 30A - 187 ns PT 77nC 250A 19ns/60ns 410μJ (on), 230μJ (off) 20V 5.5V - - - - - - - - ROHS3 Compliant Lead Free
                        IXGH48N60C3D1
                        IXGH48N60C3D1

                        IXYS
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        ON Semiconductor NGTB40N120S3WG
                        Mfr. Тип
                        NGTB40N120S3WG
                        Anlielectronics Тип

                        		ON Semiconductor
                        IGBT 1.2KV 40A TO247-3
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 4 Weeks ACTIVE (Last Updated: 4 days ago) - Through Hole TO-247-3 - - - - - - - - - - - 160A - - - - - - - - - - - - - - - - - - 600V, 40A, 10 Ω, 15V - - -55°C~175°C TJ Tube 2016 - - yes Active - - - - - - - - - - - - - - - - - - - - - - - - - - - - Standard - 454W - - - - - - - 163ns - 1200V - - - 1.95V @ 15V, 40A - - Trench Field Stop 212nC - 12ns/145ns 2.2mJ (on), 1.1mJ (off) - - - - - - - - - - ROHS3 Compliant -
                          NGTB40N120S3WG
                          NGTB40N120S3WG

                          ON Semiconductor
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          ON Semiconductor FGA30N65SMD
                          Mfr. Тип
                          FGA30N65SMD
                          Anlielectronics Тип

                          		ON Semiconductor
                          IGBT Transistors 650V 30A FS Planar Gen2 IGBT
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 5 Weeks ACTIVE (Last Updated: 3 days ago) Through Hole Through Hole TO-3P-3, SC-65-3 3 - 6.401g SILICON - - - 650V 2.29V - - - - - - - - - - - - 1 - - - - - - - - 400V, 30A, 6 Ω, 15V - - -55°C~175°C TJ Tube 2012 - e3 yes Active 1 (Unlimited) 3 EAR99 Tin (Sn) - - - 8541.29.00.95 - - 300W - - - - - - - - - - - - - - Single 300W - Standard - - - POWER CONTROL - N-CHANNEL - 650V 60A 35ns - - - - 41 ns 2.5V @ 15V, 30A - 125 ns Field Stop 87nC 90A 14ns/102ns 716μJ (on), 208μJ (off) 20V 6V - - - 20.1mm 16.2mm 5mm No - ROHS3 Compliant -
                            FGA30N65SMD
                            FGA30N65SMD

                            ON Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Infineon Technologies IRG7PH42UD1-EP
                            Mfr. Тип
                            IRG7PH42UD1-EP
                            Anlielectronics Тип

                            		Infineon Technologies
                            IGBT 1200V 85A COPAK247
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - - Through Hole Through Hole TO-247-3 3 - - SILICON - - - 1.2kV 1.7V - - - - - - - - - - - - 1 - - - - - - - - 600V, 30A, 10 Ω, 15V - - -55°C~150°C TJ Tube 2004 - e3 - Obsolete 1 (Unlimited) 3 EAR99 MATTE TIN OVER NICKEL - - - - - - 313W - - 250 - - 30 IRG7PH42 - - - - - - - Single - COLLECTOR Standard - 313W - POWER CONTROL - N-CHANNEL - 2V 85A - TO-247AD 1200V - - - 2V @ 15V, 30A - 460 ns Trench 180nC 200A -/270ns 1.21mJ (off) - 6V - - - - - - No No SVHC RoHS Compliant -
                              IRG7PH42UD1-EP
                              IRG7PH42UD1-EP

                              Infineon Technologies
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              ON Semiconductor FGA25S125P
                              Mfr. Тип
                              FGA25S125P
                              Anlielectronics Тип

                              		ON Semiconductor
                              IGBT Transistors Shorted Anode IGBT
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 - - Through Hole Through Hole TO-3P-3, SC-65-3 3 - 6.401g - - - - 1.25kV 2.16V - - - - - - - - - - - - 1 - - - - - - - - - - - - Tube 2013 - - yes Obsolete 1 (Unlimited) 3 - - 175°C -55°C - - - - 250W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - - Single - - Standard - - - POWER CONTROL - N-CHANNEL - 1.25kV 50A - - 1250V - - - 2.35V @ 15V, 25A - - Trench Field Stop 204nC 75A - - - - - - - 20.1mm 15.8mm 5mm - - RoHS Compliant -
                                FGA25S125P
                                FGA25S125P

                                ON Semiconductor
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Microchip Technology APT65GP60L2DQ2GQ
                                Mfr. Тип
                                APT65GP60L2DQ2GQ
                                Anlielectronics Тип

                                		Microchip Technology
                                IGBT Transistors FG, IGBT-COMBI, 600V, TO-264 MAX, RoHS
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - - - TO-247-3 - - - - - - 600 V - 2.2 V 198 A - - 1 - - - - 30 V, + 30 V + 150 C - - 55 C Through Hole - - - APT65GP60L2DQ2G - 833 W - - Details - - 1.340411 oz - Tube - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Single - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                                  APT65GP60L2DQ2GQ
                                  APT65GP60L2DQ2GQ

                                  Microchip Technology
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Microchip Technology APT20GF120BRDG
                                  Mfr. Тип
                                  APT20GF120BRDG
                                  Anlielectronics Тип

                                  		Microchip Technology
                                  IGBT NPT COMBI 1200V 20A TO-247
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - - - Through Hole TO-247-3 - TO-247-3 - - APT20GF120 Microchip Technology 1.2 kV - 2.7 V 20 A - 32 A 1 - Microchip - - 20 V, + 20 V + 150 C Microchip Technology - 55 C Through Hole - Tube - - - 200 W Active - Non-Compliant 792V, 20A, 10Ohm, 15V - - -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - IGBTs - - Si - - - - - - - - - - - - Single - - - Standard - 200 W - - - - IGBT Transistors - - - - 1200 V - - - 3.2V @ 15V, 15A - - NPT 140 nC 64 A 17ns/93ns - - - 85 ns - IGBT Transistors - - - - - - -
                                    APT20GF120BRDG
                                    APT20GF120BRDG

                                    Microchip Technology
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    STMicroelectronics STGW60H60DLFB
                                    Mfr. Тип
                                    STGW60H60DLFB
                                    Anlielectronics Тип

                                    		STMicroelectronics
                                    IGBT 600V 80A 375W TO-247
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 20 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Through Hole TO-247-3 3 - 38.000013g - - - - 600V 1.6V - - - - - - - - - - - - - - - - - - - - - 400V, 60A, 5 Ω, 15V - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - EAR99 - - - - - - - 375W - - NOT SPECIFIED - - NOT SPECIFIED STGW60 - - - - - - - Single - - Standard - 375W - - - - - 600V 80A - - - - - - 2V @ 15V, 60A - - Trench Field Stop 306nC 240A -/160ns 626μJ (off) - - - - - 20.15mm 15.75mm 5.15mm - - ROHS3 Compliant Lead Free
                                      STGW60H60DLFB
                                      STGW60H60DLFB

                                      STMicroelectronics
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      STMicroelectronics STGP10NC60HD
                                      Mfr. Тип
                                      STGP10NC60HD
                                      Anlielectronics Тип

                                      		STMicroelectronics
                                      IGBT 600V 20A 65W TO220
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 8 Weeks ACTIVE (Last Updated: 8 months ago) Through Hole Through Hole TO-220-3 3 - 350.003213mg SILICON - - - 600V 1.9V - - - - - - - - - - - - 1 - - - - - - - - 390V, 5A, 10 Ω, 15V 72 ns - -55°C~150°C TJ Tube - PowerMESH™ e3 - Active 1 (Unlimited) 3 EAR99 Tin (Sn) - - - - - 600V 65W - - - - 20A - STGP10 3 - - - - - - Single 56W - Standard 14.2 ns - - MOTOR CONTROL 5ns N-CHANNEL - 600V 20A 22 ns TO-220AB - - - 19 ns 2.5V @ 15V, 5A 7A 247 ns - 19.2nC 30A 14.2ns/72ns 31.8μJ (on), 95μJ (off) 20V 5.75V - - - 9.15mm 10.4mm 4.6mm No - ROHS3 Compliant Lead Free
                                        STGP10NC60HD
                                        STGP10NC60HD

                                        STMicroelectronics
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        STMicroelectronics STGW30V60F
                                        Mfr. Тип
                                        STGW30V60F
                                        Anlielectronics Тип

                                        		STMicroelectronics
                                        IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 20 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Through Hole TO-247-3 3 - - - - - - 600V 2.3V - - - - - - - - - - - - - - - - - - - - - 400V, 30A, 10 Ω, 15V - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - EAR99 - - - - - - - 260W - - - - - - STGW30 - - - - - - - Single 260W - Standard - - - - - - - 600V 60A - - - - - - 2.3V @ 15V, 30A - - Trench Field Stop 163nC 120A 45ns/189ns 383μJ (on), 233μJ (off) - - - - - 20.15mm 15.75mm 5.15mm No - ROHS3 Compliant -
                                          STGW30V60F
                                          STGW30V60F

                                          STMicroelectronics
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: IKP20N60TAHKSA1,STGW45HF60WD,STGW30M65DF2,GT50J341,Q,FGI3236-F085.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - IGBTs - Single has 7211 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.