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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Number of Terminals Transistor Element Material Base Product Number Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Continuous Collector Current Ic Max Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Gate-Emitter Leakage Current Ihs Manufacturer Manufacturer Part Number Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Styles Number of Elements Operating Temperature-Max Package Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Pd - Power Dissipation Product Status Reflow Temperature-Max (s) Risk Rank RoHS Rohs Code Test Conditions Turn Off Delay Time Turn-off Time-Nom (toff) Turn-on Time-Nom (ton) Unit Weight Voltage Rating (DC) Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Rise Time-Max Polarity Configuration Element Configuration Power Dissipation Case Connection Input Type Turn On Delay Time Power - Max Transistor Application Halogen Free Rise Time Polarity/Channel Type Input Collector Emitter Voltage (VCEO) Max Collector Current Operating Temperature Range Reverse Recovery Time Current - Collector Cutoff (Max) JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Max Breakdown Voltage Power Dissipation-Max (Abs) Turn On Time Vce(on) (Max) @ Vge, Ic Collector Current-Max (IC) Continuous Collector Current Turn Off Time-Nom (toff) IGBT Type Collector-Emitter Voltage-Max Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy NTC Thermistor Gate-Emitter Voltage-Max Input Capacitance (Cies) @ Vce Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
STMicroelectronics STGW50H60DF
Mfr. Тип
STGW50H60DF
Anlielectronics Тип

STMicroelectronics
IGBT Transistors 50A 600V FST IGBT Ultrafast Diode
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 - - Through Hole Through Hole TO-247-3 - - - 6.500007g - SILICON - - 600V 1.8V - - - - - - - - - - - - 1 - - - - - - - - - - - - - 400V, 50A, 10 Ω, 15V 205 ns - - - - -55°C~150°C TJ Tube - - e3 - Obsolete 1 (Unlimited) 3 - EAR99 Tin (Sn) - - - - - 360W - - - - - - STGW50 3 R-PSFM-T3 - - - - Single - - Standard 62 ns 360W POWER CONTROL - - N-CHANNEL - 600V 100A - 55 ns - - - - - 91 ns 1.8V @ 15V, 50A - - 285 ns Trench Field Stop - 217nC 200A 62ns/178ns 890μJ (on), 860μJ (off) - 20V - - - - - - No - ROHS3 Compliant Lead Free
    STGW50H60DF
    STGW50H60DF

    STMicroelectronics
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Infineon Technologies IGP20N65F5XKSA1
    Mfr. Тип
    IGP20N65F5XKSA1
    Anlielectronics Тип

    		Infineon Technologies
    IGBT TRENCH 650V 42A TO220-3
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 16 Weeks - Through Hole Through Hole TO-220-3 - 3 - 6.000006g - SILICON - - 650V 1.6V - - - - - - - - - - - - 1 - - - - - - - - - - - - - 400V, 10A, 32 Ω, 15V - - - - - -40°C~175°C TJ Tube 2013 TrenchStop™ e3 yes Active 1 (Unlimited) 3 - EAR99 Tin (Sn) - - - - - 125W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - Single - COLLECTOR Standard - 125W POWER CONTROL Halogen Free - N-CHANNEL - 650V 42A - - - TO-220AB - - - 32 ns 2.1V @ 15V, 20A - - 211 ns Trench - 48nC 60A 20ns/165ns 160μJ (on), 60μJ (off) - - - - - - - - - - ROHS3 Compliant Lead Free
      IGP20N65F5XKSA1
      IGP20N65F5XKSA1

      Infineon Technologies
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      ON Semiconductor FGY120T65SPD-F085
      Mfr. Тип
      FGY120T65SPD-F085
      Anlielectronics Тип

      		ON Semiconductor
      IGBT 650V 240A 882W TO-247
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 4 Weeks ACTIVE (Last Updated: 1 week ago) Through Hole Through Hole TO-247-3 - - - 7.629g - - - - 650V - - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 120A, 5 Ω, 15V - - - - - -55°C~175°C TJ Tube 2016 Automotive, AEC-Q101 - yes Active 1 (Unlimited) - - - - - - - - - 882W - - - not_compliant - - - - - - - - - - - - Standard - 882W - - - - - 1.85V 240A - 123 ns - - - - - - 1.85V @ 15V, 120A - - - Trench Field Stop - 162nC 378A 53ns/102ns 6.8μJ (on), 3.5μJ (off) - - - - - - - - - - ROHS3 Compliant -
        FGY120T65SPD-F085
        FGY120T65SPD-F085

        ON Semiconductor
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Infineon Technologies IRG4BC20FDPBF
        Mfr. Тип
        IRG4BC20FDPBF
        Anlielectronics Тип

        		Infineon Technologies
        IGBT 600V 16A 60W TO220AB
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 16 Weeks - Through Hole Through Hole TO-220-3 - 3 TO-220AB - - - - - 600V 1.66V - - 16A - - - - - - - - - - - - - - - - - - - - - - - 480V, 9A, 50Ohm, 15V - - - - - -55°C~150°C TJ Tube 1997 - - - Obsolete 1 (Unlimited) - Through Hole - - 150°C -55°C - - 600V 60W - - - - 16A - - - - - - NPN - Single 60W - Standard - 60W - - 20ns - - 2V 16A - 37 ns - - 600V - - - 2V @ 15V, 9A - - - - - 27nC 64A 43ns/240ns 250μJ (on), 640μJ (off) - - - - - 8.77mm 10.5156mm 4.69mm No No SVHC RoHS Compliant Contains Lead, Lead Free
          IRG4BC20FDPBF
          IRG4BC20FDPBF

          Infineon Technologies
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          IXYS IXXH30N60C3D1
          Mfr. Тип
          IXXH30N60C3D1
          Anlielectronics Тип

          		IXYS
          IGBT Transistors XPT 600V IGBT 30A
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 28 Weeks - Through Hole Through Hole TO-247-3 - - - - - SILICON - - 600V - - - - - - - - - - - - - 1 - - - - - - - - - - - - - 400V, 24A, 10 Ω, 15V - - - - - -55°C~175°C TJ Tube 2015 GenX3™, XPT™ - - Active 1 (Unlimited) 3 - - - - - - - - 270W SINGLE - - - - - - 3 R-PSFM-T3 Not Qualified - - SINGLE WITH BUILT-IN DIODE - - COLLECTOR Standard - 270W POWER CONTROL - - N-CHANNEL - 2.3V 60A - 25 ns - TO-247AD - - - 57 ns 2.3V @ 15V, 24A - - 166 ns PT - 37nC 110A 23ns/77ns 500μJ (on), 270μJ (off) - 20V - 5.5V - - - - - - ROHS3 Compliant -
            IXXH30N60C3D1
            IXXH30N60C3D1

            IXYS
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor FGA20S125P-SN00336
            Mfr. Тип
            FGA20S125P-SN00336
            Anlielectronics Тип

            		ON Semiconductor
            IGBT 1250V 20A 250W TO-3PN
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 4 Weeks ACTIVE (Last Updated: 6 days ago) Through Hole Through Hole TO-3P-3, SC-65-3 - - - 6.401g - - - - 1.25kV - - - - - - - - - - - - - - - - - - - - - - - - - - - 600V, 20A, 10 Ω, 15V - - - - - -55°C~175°C TJ Tube 2016 - - yes Active 1 (Unlimited) - - - - - - - - - 250W - - - - - - - - - - - - - - - - Standard - 250W - - - N-CHANNEL - 2.5V 40A - - - - 1250V - - - 2.5V @ 15V, 20A - - - Trench - 153nC 60A 10ns/400ns 740μJ (on), 500μJ (off) - 25V - 7.5V - - - - - - ROHS3 Compliant -
              FGA20S125P-SN00336
              FGA20S125P-SN00336

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Infineon Technologies IRG4PC40KPBF
              Mfr. Тип
              IRG4PC40KPBF
              Anlielectronics Тип

              		Infineon Technologies
              IGBT 600V 42A 160W TO247AC
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 14 Weeks - Through Hole Through Hole TO-247-3 - 3 - - - SILICON - - 600V 2.6V - - - - - - - - - - - - 1 - - - - - - - - - - - - - 480V, 25A, 10 Ω, 15V - - - - - -55°C~150°C TJ Bulk 2000 - - - Obsolete 1 (Unlimited) 3 - EAR99 - - - ULTRA FAST - 600V 160W - - - - 42A - - - - - - - - Single 160W COLLECTOR Standard - - POWER CONTROL - 15ns N-CHANNEL - 2.6V 42A - - - TO-247AC - - - 48 ns 2.6V @ 15V, 25A - - 340 ns - - 120nC 84A 30ns/140ns 620μJ (on), 330μJ (off) - 20V - 6V 210ns 20.7mm 15.87mm 5.3086mm No No SVHC RoHS Compliant Lead Free
                IRG4PC40KPBF
                IRG4PC40KPBF

                Infineon Technologies
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Infineon Technologies IRG4BC40W-LPBF
                Mfr. Тип
                IRG4BC40W-LPBF
                Anlielectronics Тип

                		Infineon Technologies
                IGBT 600V 40A 160W TO262
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 9 Weeks - Through Hole Through Hole TO-262-3 Long Leads, I2Pak, TO-262AA - 3 - 2.084002g - SILICON - - 600V 2.36V - - - - - - - - - - - - 1 - - - - - - - - - - - - - 480V, 20A, 10 Ω, 15V - - - - - -55°C~150°C TJ Tube 2010 - e3 - Last Time Buy 1 (Unlimited) 3 - EAR99 Matte Tin (Sn) - with Nickel (Ni) barrier - - LOW CONDUCTION LOSS - 600V 160W SINGLE - 260 - 40A 30 - - - - - - - Dual 160W COLLECTOR Standard - - POWER CONTROL - 22ns N-CHANNEL - 2.5V 40A - - - - - - - 48 ns 2.5V @ 15V, 20A - - 294 ns - - 98nC 160A 27ns/100ns 110μJ (on), 230μJ (off) - 20V - 6V 110ns 9.652mm 10.668mm 4.826mm No No SVHC ROHS3 Compliant Lead Free
                  IRG4BC40W-LPBF
                  IRG4BC40W-LPBF

                  Infineon Technologies
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor FGA40T65UQDF
                  Mfr. Тип
                  FGA40T65UQDF
                  Anlielectronics Тип

                  		ON Semiconductor
                  IGBT NPT 650V 80A 231W Through Hole TO-3PN
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 14 Weeks ACTIVE (Last Updated: 4 days ago) Through Hole Through Hole TO-3P-3, SC-65-3 - - - 6.401g - - - - 650V - - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 40A, 6 Ω, 15V - - - - - -55°C~175°C TJ Tube 2016 - e3 yes Active 1 (Unlimited) - - EAR99 Tin (Sn) - - - - - 231W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - - - - Standard - 231W - - - - - 1.67V 80A - 89 ns - - - - - - 1.67V @ 15V, 40A - - - NPT - 306nC 120A 32ns/271ns 989μJ (on), 310μJ (off) - - - - - - - - - - ROHS3 Compliant -
                    FGA40T65UQDF
                    FGA40T65UQDF

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    IXYS IXBH16N170A
                    Mfr. Тип
                    IXBH16N170A
                    Anlielectronics Тип

                    		IXYS
                    IGBT 1700V 16A 150W TO247AD
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 30 Weeks - Through Hole Through Hole TO-247-3 - 3 - 6.500007g - SILICON - - 1.7kV - - - - - - - - - - - - - 1 - - - - - - - - - - - - - 1360V, 10A, 10 Ω, 15V 160 ns - - - - -55°C~150°C TJ Bulk 2000 BIMOSFET™ - yes Active 1 (Unlimited) 3 - - - - - LOW SWITCHING LOSSES - 1.7kV 150W - - - - 16A - - 3 - - - - - Single 150W COLLECTOR Standard 15 ns - MOTOR CONTROL - 25ns N-CHANNEL - 1.7kV 16A - 360 ns - TO-247AD 1700V - - 43 ns 6V @ 15V, 10A - - 370 ns - - 65nC 40A 15ns/160ns 1.2mJ (off) - 20V - 5.5V 100ns 21.46mm 16.26mm 5.3mm No - ROHS3 Compliant Lead Free
                      IXBH16N170A
                      IXBH16N170A

                      IXYS
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      ON Semiconductor FGB20N60SF
                      Mfr. Тип
                      FGB20N60SF
                      Anlielectronics Тип

                      		ON Semiconductor
                      FAIRCHILD SEMICONDUCTOR FGB20N60SF IGBT Single Transistor, General Purpose, 20 A, 600 V, 208 W, 600 V, TO-263, 3 Pins
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 4 Weeks - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - 3 - 1.31247g - SILICON - - 600V 2.2V - - - - - - - - - - - - 1 - - - - - - - - - - - - - 400V, 20A, 10 Ω, 15V - - - - - -55°C~150°C TJ Tape & Reel (TR) 2010 - e3 yes Active 1 (Unlimited) 2 - EAR99 Tin (Sn) - - LOW CONDUCTION LOSS 8541.29.00.95 - 208W - GULL WING - - - - FGB20N60 - R-PSSO-G2 - - - - Single - COLLECTOR Standard - 208W POWER CONTROL - - N-CHANNEL - 600V 40A - - - - - 600V - 28 ns 2.8V @ 15V, 20A - - 123 ns Field Stop - 65nC 60A 13ns/90ns 370μJ (on), 160μJ (off) - 20V - 6.5V 48ns 4.83mm 10.67mm 9.65mm No No SVHC ROHS3 Compliant -
                        FGB20N60SF
                        FGB20N60SF

                        ON Semiconductor
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        ON Semiconductor NGTB40N60L2WG
                        Mfr. Тип
                        NGTB40N60L2WG
                        Anlielectronics Тип

                        		ON Semiconductor
                        ON SEMICONDUCTOR NGTB40N60L2WG IGBT Single Transistor, 80 A, 2 V, 417 W, 600 V, TO-247, 3 Pins
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 4 Weeks ACTIVE (Last Updated: 2 days ago) Through Hole Through Hole TO-247-3 - 3 - 38.000013g - - - - 600V 2V - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 40A, 10 Ω, 15V - - - - - -55°C~175°C TJ Tube 2011 - - yes Active 1 (Unlimited) - - - - - - - - - 417W - - - - - - - - - - - - - Single - - Standard - 417W - - - - - 600V 80A - 73 ns - - - - - - 2.61V @ 15V, 40A - - - Trench Field Stop - 228nC 160A 98ns/213ns 1.17mJ (on), 280μJ (off) - - - - - 21.08mm 16.26mm 5.3mm - No SVHC ROHS3 Compliant Lead Free
                          NGTB40N60L2WG
                          NGTB40N60L2WG

                          ON Semiconductor
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Microchip Technology APT75GT120JRDQ3
                          Mfr. Тип
                          APT75GT120JRDQ3
                          Anlielectronics Тип

                          		Microchip Technology
                          IGBT Transistors FG, IGBT-COMBI,1200V, 75A, SOT-227View in Development Tools Selector
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - - Chassis Mount SOT-227-4, miniBLOC - - ISOTOP® - - - APT75GT120 - - 3.7 - - 97 A 1 - - - - - Microchip Technology - - - - Tube - - - - - - Active - - Details - - - - - 1.845798 oz - -55°C ~ 150°C (TJ) Tube - Thunderbolt IGBT® - - - - - - - - - - - - - - - - - - - - - - - - - - Single - 480 - - - 480 W - - - - Standard - - - - 200 µA - 1200 V - - - 3.7V @ 15V, 75A - 97 - NPT - - - - - No - 5.1 nF @ 25 V - - - - - - - - -
                            APT75GT120JRDQ3
                            APT75GT120JRDQ3

                            Microchip Technology
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Microchip Technology APT33GF120B2RDQ2G
                            Mfr. Тип
                            APT33GF120B2RDQ2G
                            Anlielectronics Тип

                            		Microchip Technology
                            IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHSView in Development Tools Selector
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - Production (Last Updated: 2 months ago) Through Hole Through Hole TO-247-3 Variant NO 3 - - 3 SILICON APT33GF120 1.2 kV 1.2 kV 2.5 V 64 A - 64 A 1 - MICROSEMI CORP APT33GF120B2RDQ2G - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole 1 150 °C Tube PLASTIC/EPOXY ROHS COMPLIANT, T-MAX, 3 PIN RECTANGULAR IN-LINE Active 357 W Active NOT SPECIFIED 1.48 Details Yes 800V, 25A, 4.3Ohm, 15V - 355 ns 31 ns - 1.2 kV -55°C ~ 150°C (TJ) Tube - - e1 Yes - - - - - TIN SILVER COPPER 150 °C -55 °C - - - 357 W SINGLE THROUGH-HOLE NOT SPECIFIED unknown 64 A - - 3 R-PSIP-T3 Not Qualified - - Single Single - COLLECTOR Standard - 357 W POWER CONTROL - - N-CHANNEL - 1.2 kV 64 A - - - - 1200 V - 357 W - 3V @ 15V, 25A 64 A - - NPT 1200 V 170 nC 75 A 14ns/185ns 1.315mJ (on), 1.515mJ (off) - 30 V - 6.5 V - - - - No - - Lead Free
                              APT33GF120B2RDQ2G
                              APT33GF120B2RDQ2G

                              Microchip Technology
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Infineon Technologies IRG4PSH71UDPBF
                              Mfr. Тип
                              IRG4PSH71UDPBF
                              Anlielectronics Тип

                              		Infineon Technologies
                              IGBT 1200V 99A 350W SUPER247
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 11 Weeks - Through Hole Through Hole TO-274AA - 3 - - - SILICON - - 1.2kV 2.52V - - - - - - - - - - - - 1 - - - - - - - - - - - - - 960V, 70A, 5 Ω, 15V 350 ns - - - - -55°C~150°C TJ Bulk 2004 - - - Last Time Buy 1 (Unlimited) 3 - EAR99 - - - ULTRA FAST SWITCHING - 1.2kV 350W - - - - 99A - - - - - - - - Single 350W COLLECTOR Standard 46 ns - POWER CONTROL - 77ns N-CHANNEL - 2.7V 99A - 110 ns - - 1200V - - 121 ns 2.7V @ 15V, 70A - - 810 ns - - 380nC 200A 46ns/250ns 8.8mJ (on), 9.4mJ (off) - 20V - 6V - 15.24mm 10.5156mm 4.699mm No No SVHC ROHS3 Compliant Lead Free
                                IRG4PSH71UDPBF
                                IRG4PSH71UDPBF

                                Infineon Technologies
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Infineon Technologies IRGR2B60KDPBF
                                Mfr. Тип
                                IRGR2B60KDPBF
                                Anlielectronics Тип

                                		Infineon Technologies
                                IGBT 600V 6.3A 35W DPAK
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 20 Weeks - Surface Mount Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - 3 - - - - - - 600V 1.95V - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 2A, 100 Ω, 15V - - - - - -55°C~150°C TJ Tube 2013 - - - Obsolete 1 (Unlimited) - - EAR99 - - - - - - 35W - - - - - - IRGR2B60 - - - 25ns - - Single - - Standard - 35W - - - N-CHANNEL - 2.25V 6.3A - 68 ns - - - - - - 2.25V @ 15V, 2A - - - NPT - 12nC 8A 11ns/150ns 74μJ (on), 39μJ (off) - 20V - 6V 75ns - - - No No SVHC RoHS Compliant -
                                  IRGR2B60KDPBF
                                  IRGR2B60KDPBF

                                  Infineon Technologies
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Atmel (Microchip Technology) APT43GA90BD30
                                  Mfr. Тип
                                  APT43GA90BD30
                                  Anlielectronics Тип

                                  		Atmel (Microchip Technology)
                                  IGBT Transistors FG, IGBT-COMBI, 900V, TO-247View in Development Tools Selector
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - - - - TO-247-3 - - - - - - - 900 V - 2.5 V 78 A 78 A - 1 100 nA - - - 30 V, + 30 V + 150 C - - 55 C Through Hole - - - - - - - - 337 W - - - Details - - - - - 1.340411 oz - - Tube - - - - - - - - - - - - - - - - - - - - - - - - - - - - Single - - - - - - - - - - - - - - 55 C to + 150 C - - - - - - - - - 78 A - - - - - - - - - - - - 5.31 mm 21.46 mm 16.26 mm - - - -
                                    APT43GA90BD30
                                    APT43GA90BD30

                                    Atmel (Microchip Technology)
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    STMicroelectronics STGW40H120F2
                                    Mfr. Тип
                                    STGW40H120F2
                                    Anlielectronics Тип

                                    		STMicroelectronics
                                    Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 32 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Through Hole TO-247-3 - 3 - 38.000013g - - - - 1.2kV 2.1V - - - - - - - - - - - - - - - - - - - - - - - - - - 600V, 40A, 10 Ω, 15V - - - - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - - EAR99 - - - - - - 468W - - - - - - STGW40 - - - - - - Single - - Standard - 468W - - - - - 1.2kV 80A - - - - 1200V - - - 2.6V @ 15V, 40A - - - Trench Field Stop - 158nC 160A 18ns/152ns 1mJ (on), 1.32mJ (off) - - - - - - - - - - ROHS3 Compliant -
                                      STGW40H120F2
                                      STGW40H120F2

                                      STMicroelectronics
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                                      Infineon Technologies IGW100N60H3FKSA1
                                      Mfr. Тип
                                      IGW100N60H3FKSA1
                                      Anlielectronics Тип

                                      		Infineon Technologies
                                      IGBT 600V 140A TO247-3
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 16 Weeks - Through Hole Through Hole TO-247-3 - 3 - - - - - - 600V - - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 100A, 3.5 Ω, 15V - - - - - -40°C~175°C TJ Tube 2008 TrenchStop™ e3 yes Active 1 (Unlimited) - - EAR99 Tin (Sn) - - - - - 714W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - - - - Standard - 714W - Not Halogen Free - N-CHANNEL - 600V 140A - - - - - - - - 2.3V @ 15V, 100A - - - Trench Field Stop - 625nC 300A 30ns/265ns 3.7mJ (on), 1.9mJ (off) - 20V - 5.7V - - - - - - ROHS3 Compliant Lead Free
                                        IGW100N60H3FKSA1
                                        IGW100N60H3FKSA1

                                        Infineon Technologies
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                                        Infineon Technologies IRGP4063D1-EPBF
                                        Mfr. Тип
                                        IRGP4063D1-EPBF
                                        Anlielectronics Тип

                                        		Infineon Technologies
                                        IGBT 600V 100A 330W TO-247AD
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 - - Through Hole Through Hole TO-247-3 - 3 - - - - - - 600V - - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 48A, 10 Ω, 15V - - - - - -40°C~175°C TJ Tube 2013 - - - Obsolete 1 (Unlimited) - - EAR99 - - - - - - 330W - - - - - - IRGP4063D - - - - - - Single - - Standard - 330W - - - N-CHANNEL - 2.14V 100A - 80 ns - - - - - - 2.14V @ 15V, 48A - - - - - 150nC 192A 60ns/160ns 1.4mJ (on), 1.1mJ (off) - 20V - 6.5V - 20.7mm 15.87mm 5.13mm No - RoHS Compliant Lead Free
                                          IRGP4063D1-EPBF
                                          IRGP4063D1-EPBF

                                          Infineon Technologies
                                          RoHS :
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                                          Discrete Semiconductor Products

                                          Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: STGW50H60DF,IGP20N65F5XKSA1,FGY120T65SPD-F085,IRG4BC20FDPBF,IXXH30N60C3D1.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - IGBTs - Single has 7211 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.