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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Number of Terminals Transistor Element Material Base Product Number Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Ihs Manufacturer Manufacturer Part Number Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Styles Number of Elements Operating Temperature-Max Package Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Part Package Code Pd - Power Dissipation Product Status Risk Rank RoHS Rohs Code Test Conditions Turn Off Delay Time Unit Weight Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Terminal Finish Additional Feature Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Configuration Element Configuration Power Dissipation Case Connection Input Type Turn On Delay Time Power - Max Transistor Application Halogen Free Rise Time Polarity/Channel Type Collector Emitter Voltage (VCEO) Max Collector Current Reverse Recovery Time JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Max Breakdown Voltage Power Dissipation-Max (Abs) Turn On Time Vce(on) (Max) @ Vge, Ic Collector Current-Max (IC) Continuous Collector Current Turn Off Time-Nom (toff) IGBT Type Collector-Emitter Voltage-Max Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
Infineon Technologies IRGB4610DPBF
Mfr. Тип
IRGB4610DPBF
Anlielectronics Тип

Infineon Technologies
IGBT 600V 16A 77W TO220
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 - - Through Hole Through Hole TO-220-3 - 3 - 2.299997g - - - - 600V 1.7V - - - - - - - - - - - - - - - - - - - - - - - - 400V, 6A, 47 Ω, 15V - - -40°C~175°C TJ Tube 2013 - - - Obsolete 1 (Unlimited) - EAR99 - - 77W - - NOT SPECIFIED - NOT SPECIFIED - - - - - Single - - Standard - 77W - - - N-CHANNEL 2V 16A 74 ns - - - - - 2V @ 15V, 6A - - - - - 13nC 18A 27ns/75ns 56μJ (on), 122μJ (off) 20V 6.5V - 16.51mm 10.67mm 4.83mm - No SVHC RoHS Compliant -
    IRGB4610DPBF
    IRGB4610DPBF

    Infineon Technologies
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Renesas Electronics America RJP5001APP-M0#T2
    Mfr. Тип
    RJP5001APP-M0#T2
    Anlielectronics Тип

    		Renesas Electronics America
    Trans IGBT Chip N-CH 500V 3-Pin(3 Tab) TO-220FL Tube
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 16 Weeks - Through Hole Through Hole TO-220-3 Full Pack - 3 - - - - - - 500V - - - - - - - - - - - - - - - - - - - - - - - - - 300V, 300A, 30 Ω, 12V - - -40°C~150°C TJ Tube 2012 - - - Active 3 (168 Hours) - - - - 45W - - - - - - 3 - - - Single - - Standard - 45W - - - - 500V 300A - - - - - - 10V @ 12V, 300A - - - - - - - 100ns/200ns - - - - - - - No - ROHS3 Compliant Lead Free
      RJP5001APP-M0#T2
      RJP5001APP-M0#T2

      Renesas Electronics America
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      ON Semiconductor FGH40T70SHD-F155
      Mfr. Тип
      FGH40T70SHD-F155
      Anlielectronics Тип

      		ON Semiconductor
      IGBT Transistors 650V FS Gen3 Trench IGBT
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 4 Weeks ACTIVE (Last Updated: 1 week ago) Through Hole Through Hole TO-247-3 - - - 6.39g - - - - - - - 80A - - - - - - - - - - - - - - - - - - - - - - 400V, 40A, 6 Ω, 15V - - -55°C~175°C TJ Tube 2012 - - yes Active 1 (Unlimited) - - - - - - - NOT SPECIFIED - NOT SPECIFIED - - - - - - - - Standard - 268W - - - - - - 37ns - 700V - - - 2.15V @ 15V, 40A - - - Trench Field Stop - 69nC 120A 22ns/66ns 1.15mJ (on), 271μJ (off) - - - - - - - - ROHS3 Compliant -
        FGH40T70SHD-F155
        FGH40T70SHD-F155

        ON Semiconductor
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor NGTB15N120LWG
        Mfr. Тип
        NGTB15N120LWG
        Anlielectronics Тип

        		ON Semiconductor
        ON SEMICONDUCTOR - NGTB15N120LWG - IGBT, 1200V, 15A, FS1, TO-247-3
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - LAST SHIPMENTS (Last Updated: 1 week ago) - Through Hole TO-247-3 NO 3 - - - SILICON - - 1.2kV 2.2V - - - - - - - - - - 1 - - - - - - - - - - - - - 600V, 15A, 15 Ω, 15V 165 ns - -55°C~150°C TJ Tube 2012 - e3 yes Obsolete 1 (Unlimited) 3 EAR99 Tin (Sn) - 156W - - - - - - 3 - - - Single 156W COLLECTOR Standard 72 ns 229W MOTOR CONTROL Halogen Free - N-CHANNEL 1.2kV 30A - - 1200V - - 91 ns 2.2V @ 15V, 15A - - 435 ns Trench Field Stop - 160nC 120A 72ns/165ns 2.1mJ (on), 560μJ (off) 20V 6.5V - 21.08mm 16.26mm 5.3mm No No SVHC RoHS Compliant Lead Free
          NGTB15N120LWG
          NGTB15N120LWG

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Microchip Technology APT200GN60B2G
          Mfr. Тип
          APT200GN60B2G
          Anlielectronics Тип

          		Microchip Technology
          IGBT Transistors FG, IGBT, 600V, TO-247 T-MAX, RoHSView in Development Tools Selector
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 - - - Through Hole TO-247-3 NO - - - 3 - APT200 600 V - 1.45 V 283 A 283 A 1 MICROSEMI CORP APT200GN60B2G - 20 V, + 20 V + 175 C Microchip Technology - 55 C Through Hole - 175 °C Tube PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Active TO-247AC 682 W Active 2.2 Details Yes 400V, 200A, 1Ohm, 15V - 1.340411 oz -55°C ~ 175°C (TJ) Tube - - - - - - - EAR99 - - - SINGLE THROUGH-HOLE - compliant - - 3 R-PSFM-T3 Not Qualified Single - 682 - Standard - 682 W - - - N-CHANNEL - - - TO-247AC 600 V - 682 W - 1.85V @ 15V, 200A 283 A 283 - Trench Field Stop 600 V 1180 nC 600 A 50ns/560ns 13mJ (on), 11mJ (off) 20 V 6.5 V - - - - - - - -
            APT200GN60B2G
            APT200GN60B2G

            Microchip Technology
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Infineon Technologies IRGPS66160DPBF
            Mfr. Тип
            IRGPS66160DPBF
            Anlielectronics Тип

            		Infineon Technologies
            IGBT 600V 160A TO247
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 19 Weeks - Through Hole Through Hole TO-274AA - 247 - - - SILICON - - 600V 1.65V - - - - - - - - - - 1 - - - - - - - - - - - - - 400V, 120A, 4.7 Ω, 15V - - -40°C~175°C TJ Tube 2014 - - - Obsolete 1 (Unlimited) 3 EAR99 - - 750W - - NOT SPECIFIED - NOT SPECIFIED - - R-PSIP-T3 - - Single - COLLECTOR Standard - 750W POWER CONTROL - - N-CHANNEL 1.95V 240A 95 ns - - - - 210 ns 1.95V @ 15V, 120A - - 350 ns - - 220nC 360A 80ns/190ns 4.47mJ (on), 3.43mJ (off) - - - 20.8mm 16.1mm 5.5mm - - RoHS Compliant Lead Free
              IRGPS66160DPBF
              IRGPS66160DPBF

              Infineon Technologies
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              IXYS IXXH80N65B4H1
              Mfr. Тип
              IXXH80N65B4H1
              Anlielectronics Тип

              		IXYS
              IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 18 Weeks - Through Hole Through Hole TO-247-3 - - - - - - - - 650V 1.65V - - - - - - - - - - - - - - - - - - - - - - - - 400V, 80A, 3 Ω, 15V - - -55°C~175°C TJ Tube 2015 GenX4™, XPT™ - - Active 1 (Unlimited) - - - - 625W - - - - - - - - - - Single 625W - Standard - - - - - - 2V 160A 150ns - - - - - 2V @ 15V, 80A - - - PT - 120nC 430A 38ns/120ns 3.77mJ (on), 1.2mJ (off) - - - - - - - - ROHS3 Compliant Lead Free
                IXXH80N65B4H1
                IXXH80N65B4H1

                IXYS
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Microchip Technology APT25GR120S
                Mfr. Тип
                APT25GR120S
                Anlielectronics Тип

                		Microchip Technology
                IGBT Transistors FG, IGBT, 1200V, 25A, TO-268View in Development Tools Selector
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - - - Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA - - D3Pak - - - APT25GR120 - - 2.5 - 75 A 1 - - - - Microchip Technology - - - - Bulk - - - - - - - Active - Details - 600V, 25A, 4.3Ohm, 15V - 0.218699 oz -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - - - - - - - - - - 521 - Standard - 521 W - - - - - - - - 1200 V - - - 3.2V @ 15V, 25A - 75 - NPT - 203 nC 100 A 16ns/122ns 742µJ (on), 427µJ (off) - - - - - - - - - -
                  APT25GR120S
                  APT25GR120S

                  Microchip Technology
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Rochester Electronics, LLC IRG7PH42UD-EP
                  Mfr. Тип
                  IRG7PH42UD-EP
                  Anlielectronics Тип

                  		Rochester Electronics, LLC
                  IGBT WITH RECOVERY DIODE
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - - - Through Hole TO-247-3 - - TO-247AD - - - - - - - - 85A - - - - - - - - - - - - - - - - - - - - - - 600V, 30A, 10Ohm, 15V - - -55°C~150°C TJ Tube - - - - Obsolete 1 (Unlimited) - - - - - - - - - - - - - - - - - - Standard - 320W - - - - - - 153ns - 1.2V - - - 2V @ 15V, 30A - - - Trench - 157nC 90A 25ns/229ns 2.11mJ (on), 1.18mJ (off) - - - - - - - - ROHS3 Compliant -
                    IRG7PH42UD-EP
                    IRG7PH42UD-EP

                    Rochester Electronics, LLC
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Alpha & Omega Semiconductor Inc. AOB5B65M1
                    Mfr. Тип
                    AOB5B65M1
                    Anlielectronics Тип

                    		Alpha & Omega Semiconductor Inc.
                    IGBT 650V 5A TO263
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 18 Weeks - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - - - - - SILICON - - 650V - - - - - - - - - - - 1 - - - - - - - - - - - - - 400V, 5A, 60 Ω, 15V - - -55°C~175°C TJ Tape & Reel (TR) 2011 Alpha IGBT™ - yes Active 1 (Unlimited) 2 - - - 83W SINGLE GULL WING NOT SPECIFIED - NOT SPECIFIED - - R-PSSO-G2 - SINGLE WITH BUILT-IN DIODE - - COLLECTOR Standard - 83W POWER CONTROL - - N-CHANNEL 1.98V 10A 195 ns - - 650V - 21 ns 1.98V @ 15V, 5A - - 161 ns - - 14nC 15A 8.5ns/106ns 80μJ (on), 70μJ (off) - - - - - - - - ROHS3 Compliant -
                      AOB5B65M1
                      AOB5B65M1

                      Alpha & Omega Semiconductor Inc.
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Atmel (Microchip Technology) APT30GS60BRDQ2G
                      Mfr. Тип
                      APT30GS60BRDQ2G
                      Anlielectronics Тип

                      		Atmel (Microchip Technology)
                      IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHSView in Development Tools Selector
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - - - - - - - - - - - - 600 V - 2.8 V 54 A - 1 - - - 30 V, + 30 V + 150 C - - 55 C Through Hole - - - - - - - - - 250 W - - Details - - - 0.208116 oz - Tube - - - - - - - - - - - - - - - - - - - - Single - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                        APT30GS60BRDQ2G
                        APT30GS60BRDQ2G

                        Atmel (Microchip Technology)
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        STMicroelectronics STGWA40H120F2
                        Mfr. Тип
                        STGWA40H120F2
                        Anlielectronics Тип

                        		STMicroelectronics
                        IGBT BIPO 1200V 40A TO247-3
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 32 Weeks - - Through Hole TO-247-3 - - - - - - - - - - - 80A - - - - - - - - - - - - - - - - - - - - - - 600V, 40A, 10 Ω, 15V - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - EAR99 - - - - - - - - STGWA40 - - - - - - - Standard - 468W - - - - - - - - 1200V - - - 2.6V @ 15V, 40A - - - Trench Field Stop - 158nC 160A 18ns/152ns 1mJ (on), 1.32mJ (off) - - - - - - - - ROHS3 Compliant -
                          STGWA40H120F2
                          STGWA40H120F2

                          STMicroelectronics
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Infineon Technologies IKZ75N65ES5XKSA1
                          Mfr. Тип
                          IKZ75N65ES5XKSA1
                          Anlielectronics Тип

                          		Infineon Technologies
                          IGBT TRENCH 650V 80A TO247-4
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 16 Weeks - - Through Hole TO-247-4 NO - - - - SILICON - - - - - 80A - - - - - - - - 1 - - - - - - - - - - - - - 400V, 15A, 22.3 Ω, 15V - - -40°C~175°C TJ Tube 2014 TrenchStop™ 5 e3 - Active Not Applicable 4 EAR99 Tin (Sn) - - SINGLE - NOT SPECIFIED - NOT SPECIFIED - - R-PSFM-T4 - SINGLE WITH BUILT-IN DIODE - - COLLECTOR Standard - 395W POWER CONTROL - - N-CHANNEL - - 72ns - 650V - - 70 ns 1.75V @ 15V, 75A - - 475 ns Trench - 164nC 300A 46ns/405ns 1.3mJ (on), 1.5mJ (off) - - - - - - - - ROHS3 Compliant -
                            IKZ75N65ES5XKSA1
                            IKZ75N65ES5XKSA1

                            Infineon Technologies
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor NGTB10N60R2DT4G
                            Mfr. Тип
                            NGTB10N60R2DT4G
                            Anlielectronics Тип

                            		ON Semiconductor
                            ON SEMICONDUCTOR NGTB10N60R2DT4G IGBT Single Transistor, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 Pins
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 4 Weeks ACTIVE (Last Updated: 3 days ago) Surface Mount Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - 3 - - - - - - 600V 1.7V - - - - - - - - - - - - - - - - - - - - - - - - 300V, 10A, 30 Ω, 15V - - 175°C TJ Tape & Reel (TR) 2017 - e3 yes Active 1 (Unlimited) - - Tin (Sn) - 72W - - - not_compliant - - - - - - Single - - Standard - 72W - - - - 600V 20A 90 ns - - 600V - - 2.1V @ 15V, 10A - - - - - 53nC 40A 48ns/120ns 412μJ (on), 140μJ (off) - - - 2.38mm 6.73mm 6.22mm - No SVHC ROHS3 Compliant Lead Free
                              NGTB10N60R2DT4G
                              NGTB10N60R2DT4G

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              STMicroelectronics STGWT30H60DFB
                              Mfr. Тип
                              STGWT30H60DFB
                              Anlielectronics Тип

                              		STMicroelectronics
                              Trans IGBT Chip N-CH 600V 60A 3-Pin TO-3P Tube
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 32 Weeks - Through Hole Through Hole TO-3P-3, SC-65-3 - 3 - 6.756003g - - - - 600V 1.55V - - - - - - - - - - - - - - - - - - - - - - - - 400V, 30A, 10 Ω, 15V - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - EAR99 - - 260W - - NOT SPECIFIED - NOT SPECIFIED STGWT30 - - - - Single - - Standard - 260W - - - - 600V 60A 53 ns - - - - - 2V @ 15V, 30A - - - Trench Field Stop - 149nC 120A 37ns/146ns 383μJ (on), 293μJ (off) - - - 14.1mm 15.8mm 5mm - - ROHS3 Compliant -
                                STGWT30H60DFB
                                STGWT30H60DFB

                                STMicroelectronics
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Infineon Technologies IKY40N120CH3XKSA1
                                Mfr. Тип
                                IKY40N120CH3XKSA1
                                Anlielectronics Тип

                                		Infineon Technologies
                                IGBT 1200V 80A TO247-4
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 16 Weeks - - Through Hole TO-247-4 NO - - - - SILICON - - - - - 80A - - - - - - - - 1 - - - - - - - - - - - - - 600V, 40A, 12 Ω, 15V - - -40°C~175°C TJ Tube - - e3 - Active Not Applicable 4 EAR99 Tin (Sn) - - SINGLE - NOT SPECIFIED - NOT SPECIFIED - - R-PSFM-T4 - SINGLE WITH BUILT-IN DIODE - - - Standard - 500W POWER CONTROL - - N-CHANNEL - - 350ns - 1200V - - 61 ns 2.35V @ 15V, 40A - - 439 ns - - 190nC 160A 30ns/280ns 2.18mJ (on), 1.3mJ (off) - - - - - - - - ROHS3 Compliant -
                                  IKY40N120CH3XKSA1
                                  IKY40N120CH3XKSA1

                                  Infineon Technologies
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  STMicroelectronics STGW19NC60WD
                                  Mfr. Тип
                                  STGW19NC60WD
                                  Anlielectronics Тип

                                  		STMicroelectronics
                                  IGBT 600V 42A 125W TO247
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - - Through Hole Through Hole TO-247-3 - 3 - - - SILICON - - 600V 2.5V - - - - - - - - - - 1 - - - - - - - - - - - - - 390V, 12A, 10 Ω, 15V 90 ns - -55°C~150°C TJ Tube - PowerMESH™ e3 - Obsolete 1 (Unlimited) 3 EAR99 Tin (Sn) - 125W - - - - - STGW19 3 - - - Single 125W - Standard 25 ns - POWER CONTROL - 7ns N-CHANNEL 600V 42A 31ns - - - - 33 ns 2.5V @ 15V, 12A - - 204 ns - - 53nC - 25ns/90ns 81μJ (on), 125μJ (off) 20V 5.75V - 20.15mm 15.75mm 5.15mm No No SVHC ROHS3 Compliant Lead Free
                                    STGW19NC60WD
                                    STGW19NC60WD

                                    STMicroelectronics
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Infineon Technologies IKA15N65H5XKSA1
                                    Mfr. Тип
                                    IKA15N65H5XKSA1
                                    Anlielectronics Тип

                                    		Infineon Technologies
                                    Trans IGBT Chip N-CH 650V 14A 3-Pin(3 Tab) TO-220FP Tube
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 16 Weeks - Through Hole Through Hole TO-220-3 - 3 - 6.000006g - - - - 650V 1.65V - - - - - - - - - - - - - - - - - - - - - - - - 400V, 7.5A, 39 Ω, 15V - - -40°C~175°C TJ Tube 2006 TrenchStop® e3 yes Active 1 (Unlimited) - EAR99 Tin (Sn) - 33.3W - - NOT SPECIFIED - NOT SPECIFIED - - - - - Single - - Standard - 33.3W - Halogen Free - N-CHANNEL 650V 14A 48 ns - - - - - 2.1V @ 15V, 15A - - - - - 38nC 45A 17ns/160ns 120μJ (on), 50μJ (off) 20V 4.8V - 16.15mm 10.65mm 4.85mm - Unknown ROHS3 Compliant Lead Free
                                      IKA15N65H5XKSA1
                                      IKA15N65H5XKSA1

                                      Infineon Technologies
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      IXYS IXGH72N60B3
                                      Mfr. Тип
                                      IXGH72N60B3
                                      Anlielectronics Тип

                                      		IXYS
                                      Trans IGBT Chip N-CH 600V 75A 3-Pin(3 Tab) TO-247AD
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 30 Weeks - Through Hole Through Hole TO-247-3 - 3 - 6.500007g - SILICON - - 600V - - - - - - - - - - - 1 - - - - - - - - - - - - - 480V, 50A, 3 Ω, 15V - - -55°C~150°C TJ Tube 2009 GenX3™ - yes Active 1 (Unlimited) 3 EAR99 - LOW CONDUCTION LOSS 540W - - NOT SPECIFIED - NOT SPECIFIED IXG*72N60 3 - Not Qualified - Single - COLLECTOR Standard - 540W POWER CONTROL - - N-CHANNEL 600V 75A - TO-247AD - - - 63 ns 1.8V @ 15V, 60A - - 370 ns PT - 230nC 400A 31ns/150ns 1.38mJ (on), 1.05mJ (off) 20V 5V 160ns 21.46mm 16.26mm 5.3mm - - ROHS3 Compliant -
                                        IXGH72N60B3
                                        IXGH72N60B3

                                        IXYS
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        STMicroelectronics STGF20NB60S
                                        Mfr. Тип
                                        STGF20NB60S
                                        Anlielectronics Тип

                                        		STMicroelectronics
                                        Trans IGBT Chip N-CH 600V 24A 3-Pin(3 Tab) TO-220FP Tube
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                                          		 8 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Through Hole TO-220-3 Full Pack - 3 - - - SILICON - - 600V - - - - - - - - - - - 1 - - - - - - - - - - - - - 480V, 20A, 100 Ω, 15V - - -55°C~150°C TJ Tube - PowerMESH™ e3 - Active 1 (Unlimited) 3 EAR99 Matte Tin (Sn) - annealed - 40W - - - - - STGF20 3 - - - Single - ISOLATED Standard - 40W MOTOR CONTROL - - N-CHANNEL 600V 24A - TO-220AB - - - 162 ns 1.7V @ 15V, 20A - - 3600 ns - - 83nC 70A 92ns/1.1μs 840μJ (on), 7.4mJ (off) 20V 5V - - - - No - ROHS3 Compliant -
                                          STGF20NB60S
                                          STGF20NB60S

                                          STMicroelectronics
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