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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Base Product Number Brand Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Continuous Collector Current Ic Max Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Gate-Emitter Leakage Current Ihs Manufacturer Manufacturer Manufacturer Part Number Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Styles Number of Elements Operating Temperature-Max Package Part Life Cycle Code Pd - Power Dissipation Product Status Risk Rank RoHS Rohs Code Test Conditions Tradename Turn Off Delay Time Unit Weight Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Terminal Finish Subcategory Voltage - Rated DC Max Power Dissipation Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Rise Time-Max Configuration Element Configuration Power Dissipation Case Connection Input Type Power - Max Clamping Voltage Transistor Application Halogen Free Rise Time Forward Voltage Polarity/Channel Type Product Type Collector Emitter Voltage (VCEO) Max Collector Current Operating Temperature Range Reverse Recovery Time JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Max Breakdown Voltage Power Dissipation-Max (Abs) Turn On Time Vce(on) (Max) @ Vge, Ic Collector Current-Max (IC) Continuous Collector Current Turn Off Time-Nom (toff) IGBT Type Collector-Emitter Voltage-Max Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Product Category Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
Infineon Technologies IKP30N65F5XKSA1
Mfr. Тип
IKP30N65F5XKSA1
Anlielectronics Тип

Infineon Technologies
IGBT TRENCH 650V 55A TO220-3
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 16 Weeks - - Through Hole Through Hole TO-220-3 - 3 - 6.000006g SILICON - - - 650V 1.6V - - - - - - - - - - - - - 1 - - - - - - - - 400V, 15A, 23 Ω, 15V - - - -40°C~175°C TJ Tube 2013 TrenchStop™ e3 yes Active 1 (Unlimited) 3 - EAR99 Tin (Sn) - - 188W - NOT SPECIFIED - - NOT SPECIFIED - - - - - - Single - COLLECTOR Standard 188W - POWER CONTROL Halogen Free - 1.35V N-CHANNEL - 650V 55A - 55 ns TO-220AB - - - 28 ns 2.1V @ 15V, 30A - - 206 ns Trench - 65nC 90A 19ns/170ns 280μJ (on), 70μJ (off) - - - - - - - - - ROHS3 Compliant Lead Free
    IKP30N65F5XKSA1
    IKP30N65F5XKSA1

    Infineon Technologies
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor NGTB40N60IHLWG
    Mfr. Тип
    NGTB40N60IHLWG
    Anlielectronics Тип

    		ON Semiconductor
    Trans IGBT Chip N-CH 600V 80A 3-Pin(3 Tab) TO-247 Rail
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - LAST SHIPMENTS (Last Updated: 5 days ago) - - Through Hole TO-247-3 NO 3 - 6.500007g SILICON - - - 600V 2V - - - - - - - - - - - - - 1 - - - - - - - - 400V, 40A, 10 Ω, 15V - - - -55°C~150°C TJ Tube 2005 - e3 yes Obsolete 1 (Unlimited) 3 - EAR99 Tin (Sn) - - 250W - NOT SPECIFIED - - NOT SPECIFIED - 3 - - - - Single - - Standard 250W - POWER CONTROL Halogen Free - - N-CHANNEL - 600V 80A - 400 ns - - - - 110 ns 2.4V @ 15V, 40A - - 230 ns Trench Field Stop - 130nC 200A 70ns/140ns 400μJ (off) - - - - 21.08mm 16.26mm 5.3mm - No SVHC RoHS Compliant Lead Free
      NGTB40N60IHLWG
      NGTB40N60IHLWG

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Infineon Technologies IRGP4690DPBF
      Mfr. Тип
      IRGP4690DPBF
      Anlielectronics Тип

      		Infineon Technologies
      IGBT 600V 140A 454W TO247AC
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 - - - Through Hole Through Hole TO-247-3 - 3 - - - - - - 600V 1.7V - - - - - - - - - - - - - - - - - - - - - - 400V, 75A, 10 Ω, 15V - - - -55°C~175°C TJ Tube 2007 - - - Obsolete 1 (Unlimited) - - EAR99 - - - 454W - NOT SPECIFIED - - NOT SPECIFIED - - - - - - Single - - Standard 454W - - - - - - - 2.1V 140A - 155 ns - - - - - 2.1V @ 15V, 75A - - - - - 150nC 225A 50ns/200ns 2.47mJ (on), 2.16mJ (off) - - - - 20.7mm 15.87mm 5.31mm - No SVHC RoHS Compliant -
        IRGP4690DPBF
        IRGP4690DPBF

        Infineon Technologies
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        STMicroelectronics STGWT60H65FB
        Mfr. Тип
        STGWT60H65FB
        Anlielectronics Тип

        		STMicroelectronics
        IGBT 650V 80A 375W TO3P-3L
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 32 Weeks ACTIVE (Last Updated: 8 months ago) - Through Hole Through Hole TO-3P-3, SC-65-3 - 3 - 6.756003g - - - - 650V 1.6V - - - - - - - - - - - - - - - - - - - - - - 400V, 60A, 5 Ω, 15V - - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - - EAR99 - - - 375W - - - - - STGWT60 - - - - - Single - - Standard 375W - - - - - - - 650V 80A - - - - - - - 2.3V @ 15V, 60A - - - Trench Field Stop - 306nC 240A 51ns/160ns 1.09mJ (on), 626μJ (off) - - - - 20.1mm 15.8mm 5mm No - ROHS3 Compliant Lead Free
          STGWT60H65FB
          STGWT60H65FB

          STMicroelectronics
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Microchip Technology APT25GN120SG/TR
          Mfr. Тип
          APT25GN120SG/TR
          Anlielectronics Тип

          		Microchip Technology
          IGBT FIELDSTOP LOW FREQUENCY SIN
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 - - - - Surface Mount TO-268-3, D3Pak (2 Leads + Tab), TO-268AA - - D3PAK - - APT25GN120 Microchip Technology 1.2 kV - - 67 A - 67 A 400 - - Microchip - - 20 V, + 20 V + 150 C Microchip Technology - 55 C SMD/SMT - - - - 272 W Active - Details - 800V, 25A, 1Ohm, 15V - - - -55°C ~ 150°C (TJ) Reel - - - - - - - - - - IGBTs - - - - - - - - - - - - Single - - - Standard 272 W - - - - - - IGBT Transistors - - - - - 1200 V - - - 2.1V @ 15V, 25A - - - Trench Field Stop - 155 nC 75 A 22ns/280ns -, 2.15J (off) - - - IGBT Transistors - - - - - - -
            APT25GN120SG/TR
            APT25GN120SG/TR

            Microchip Technology
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor ISL9V5036S3
            Mfr. Тип
            ISL9V5036S3
            Anlielectronics Тип

            		ON Semiconductor
            Motor / Motion / Ignition Controllers & Drivers Sgl N-Ch 360V
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - - - Through Hole Through Hole TO-262-3 Long Leads, I2Pak, TO-262AA - - - 2.084g - - - - 390V - - - - - - - - - - - - - - - - - - - - - - - 300V, 1k Ω, 5V - - - -40°C~175°C TJ Tube - EcoSPARK® - yes Obsolete 1 (Unlimited) - - - - - 360V 250W - - - 46A - ISL9V5036 - - - - - Single 250W - Logic - 360V - - 2.1μs - - - 1.6V 46A - - - - - - - 1.6V @ 4V, 10A - - - - - 32nC - -/10.8μs - - - - - - - - No - RoHS Compliant Lead Free
              ISL9V5036S3
              ISL9V5036S3

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              ON Semiconductor NGD8201NT4G
              Mfr. Тип
              NGD8201NT4G
              Anlielectronics Тип

              		ON Semiconductor
              Trans IGBT Chip N-CH 440V 20A 3-Pin(2 Tab) DPAK T/R
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - - - Surface Mount Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - 3 - - SILICON - - - 440V - - - - - - - - - - - - - - 1 - - - - - - - - 300V, 9A, 1k Ω, 5V - - - -55°C~175°C TJ Tape & Reel (TR) 2005 - e3 yes Obsolete 1 (Unlimited) 2 - EAR99 Tin (Sn) - 400V 125W GULL WING 260 - 20A 40 NGD8201N 3 R-PSSO-G2 - 8000ns - Single 125W COLLECTOR Logic - - POWER CONTROL - - - N-CHANNEL - 440V 20A - - - - 440V - 6500 ns 1.9V @ 4.5V, 20A - - 18500 ns - - - 50A -/5μs - 15V 2.1V 14000ns - - - - No No SVHC RoHS Compliant Lead Free
                NGD8201NT4G
                NGD8201NT4G

                ON Semiconductor
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Infineon Technologies IHP10T120
                Mfr. Тип
                IHP10T120
                Anlielectronics Тип

                		Infineon Technologies
                IGBT 1200V 16A 138W TO220-3
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - - - Through Hole Through Hole TO-220-3 - - - - SILICON - - - 1.2kV - - - - - - - - - - - - - - 1 - - - - - - - - 610V, 10A, 81 Ω, 15V - - - -40°C~150°C TJ Tube 2009 TrenchStop® e3 - Obsolete 1 (Unlimited) 3 - EAR99 Matte Tin (Sn) - - 138W - - - - - - 3 R-PSFM-T3 - - - Single - COLLECTOR Standard 138W - MOTOR CONTROL - - - N-CHANNEL - 1.2kV 16A - 185 ns TO-220AB 1200V - - 69 ns 2.2V @ 15V, 10A - - 769 ns Trench Field Stop - 53nC 24A 45ns/520ns 1.46mJ 20V 6.5V - - - - - No - RoHS Compliant Lead Free
                  IHP10T120
                  IHP10T120

                  Infineon Technologies
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Microchip Technology GN2470K4-G
                  Mfr. Тип
                  GN2470K4-G
                  Anlielectronics Тип

                  		Microchip Technology
                  INSULATED GATE BIPOLAR TRANSISTOR,700V,3.5A3 DPAKT/R
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 14 Weeks - - Surface Mount Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - 3 - - - - - - 700V - - - - - - - - - - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2008 - - - Active 3 (168 Hours) 2 - EAR99 - - - 2.5W GULL WING 260 - - - - - R-PSSO-G2 - - - Single 2.5W - Standard - - - - - - - - 700V 1A - - TO-252AA - - - - 5V @ 13V, 3A - 1A - - - - 3.5A 8ns/20ns - - - - - 2.39mm 6.73mm 6.1mm No - ROHS3 Compliant -
                    GN2470K4-G
                    GN2470K4-G

                    Microchip Technology
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Alpha & Omega Semiconductor Inc. AOT10B60D
                    Mfr. Тип
                    AOT10B60D
                    Anlielectronics Тип

                    		Alpha & Omega Semiconductor Inc.
                    IGBT 600V 20A 163W TO220
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 18 Weeks - - Through Hole Through Hole TO-220-3 - 3 - - - - - - 600V - - - - - - - - - - - - - - - - - - - - - - - 400V, 10A, 30 Ω, 15V - - - -55°C~175°C TJ Tube 2010 Alpha IGBT™ - - Active 1 (Unlimited) - - - - - - 163W - - - - - - - - - - - - - - Standard 163W - - - - - N-CHANNEL - 1.8V 20A - 105 ns - - - - - 1.8V @ 15V, 10A - - - - - 17.4nC 40A 10ns/72ns 260μJ (on), 70μJ (off) 20V - - - - - - - - ROHS3 Compliant -
                      AOT10B60D
                      AOT10B60D

                      Alpha & Omega Semiconductor Inc.
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      IXYS IXXH30N60B3D1
                      Mfr. Тип
                      IXXH30N60B3D1
                      Anlielectronics Тип

                      		IXYS
                      IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 28 Weeks - - Through Hole Through Hole TO-247-3 - - - - SILICON - - - 600V 1.66V - - - - - - - - - - - - - 1 - - - - - - - - 400V, 24A, 10 Ω, 15V - - - -55°C~175°C TJ Tube 2013 GenX3™, XPT™ - - Active 1 (Unlimited) 3 - - - - - 270W - - - - - - 3 R-PSFM-T3 Not Qualified - - Single 270W COLLECTOR Standard - - POWER CONTROL - - - N-CHANNEL - 600V 60A - 25ns TO-247AD - - - 57 ns 1.85V @ 15V, 24A - - 292 ns PT - 39nC 115A 23ns/97ns 550μJ (on), 500μJ (off) 20V 5.5V - - - - - - - ROHS3 Compliant Lead Free
                        IXXH30N60B3D1
                        IXXH30N60B3D1

                        IXYS
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        STMicroelectronics STGWT60H60DLFB
                        Mfr. Тип
                        STGWT60H60DLFB
                        Anlielectronics Тип

                        		STMicroelectronics
                        IGBT 600V 80A 375W TO3P-3L
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 32 Weeks ACTIVE (Last Updated: 7 months ago) - Through Hole Through Hole TO-3P-3, SC-65-3 - 3 - 6.756003g - - - - 600V 1.6V - - - - - - - - - - - - - - - - - - - - - - 400V, 60A, 5 Ω, 15V - - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - - EAR99 - - - 375W - - - - - STGWT60 - - - - - Single - - Standard 375W - - - - - - - 600V 80A - - - - - - - 2V @ 15V, 60A - - - Trench Field Stop - 306nC 240A -/160ns 626μJ (off) - - - - 20.1mm 15.8mm 5mm No - ROHS3 Compliant -
                          STGWT60H60DLFB
                          STGWT60H60DLFB

                          STMicroelectronics
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          ON Semiconductor NGTG30N60FLWG
                          Mfr. Тип
                          NGTG30N60FLWG
                          Anlielectronics Тип

                          		ON Semiconductor
                          ON SEMICONDUCTOR NGTG30N60FLWG IGBT, 600V, 30A, TO-247-3
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 4 Weeks LAST SHIPMENTS (Last Updated: 21 hours ago) - - Through Hole TO-247-3 NO 3 - - - - - - 600V 1.65V - - - - - - - - - - - - - - - - - - - - - - 400V, 30A, 10 Ω, 15V - - - -55°C~150°C TJ Tube 2013 - e3 yes Obsolete 1 (Unlimited) - - EAR99 Tin (Sn) - - 250W - - - - - - 3 - - - - Single 250W - Standard - - - Halogen Free - - N-CHANNEL - 600V 60A - - - - - - - 1.9V @ 15V, 30A - - - Trench Field Stop - 170nC 120A 83ns/170ns 700μJ (on), 280μJ (off) 20V 6.5V - - 21.4mm 16.25mm 5.3mm - No SVHC RoHS Compliant Lead Free
                            NGTG30N60FLWG
                            NGTG30N60FLWG

                            ON Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Infineon Technologies IRG7PH44K10DPBF
                            Mfr. Тип
                            IRG7PH44K10DPBF
                            Anlielectronics Тип

                            		Infineon Technologies
                            IGBT 1200V 70A 320W TO247AC
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - - - Through Hole Through Hole TO-247-3 - 3 - - - - - - 1.2kV 2.4V - - - - - - - - - - - - - - - - - - - - - - 600V, 25A, 10 Ω, 15V - - - -40°C~150°C TJ Tube 2013 - - - Obsolete 1 (Unlimited) - - EAR99 - - - 320W - - - - - - - - - 70ns - Single - - Standard 320W - - - - - N-CHANNEL - 2.4V 70A - 130 ns - 1200V - - - 2.4V @ 15V, 25A - - - - - 200nC 100A 75ns/315ns 2.1mJ (on), 1.3mJ (off) - 7.5V 115ns - 20.7mm 15.87mm 5.31mm No - RoHS Compliant Lead Free
                              IRG7PH44K10DPBF
                              IRG7PH44K10DPBF

                              Infineon Technologies
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Infineon Technologies IRGP4066PBF
                              Mfr. Тип
                              IRGP4066PBF
                              Anlielectronics Тип

                              		Infineon Technologies
                              IGBT 600V 140A 454W TO247AC
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 14 Weeks - - Through Hole Through Hole TO-247-3 - 3 - - SILICON - - - 600V 1.7V - - - - - - - - - - - - - 1 - - - - - - - - 400V, 75A, 10 Ω, 15V - - - -55°C~175°C TJ Tube 2011 - - - Obsolete 1 (Unlimited) 3 - EAR99 - - - 454W - - - - - - - - - 90ns - Single 454W COLLECTOR Standard - - POWER CONTROL - - - N-CHANNEL - 2.1V 140A - - TO-247AC - - - 120 ns 2.1V @ 15V, 75A - - 310 ns Trench - 150nC 225A 50ns/200ns 2.47mJ (on), 2.16mJ (off) 20V 6.5V 80ns - 20.7mm 15.87mm 5.31mm No No SVHC RoHS Compliant Lead Free
                                IRGP4066PBF
                                IRGP4066PBF

                                Infineon Technologies
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ON Semiconductor NGTB30N60FWG
                                Mfr. Тип
                                NGTB30N60FWG
                                Anlielectronics Тип

                                		ON Semiconductor
                                ON SEMICONDUCTOR NGTB30N60FWG IGBT Single Transistor, 60 A, 1.45 V, 167 W, 600 V, TO-247, 3 Pins
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - LAST SHIPMENTS (Last Updated: 20 hours ago) - - Through Hole TO-247-3 NO 3 - - - - - - 600V 1.45V - - - - - - - - - - - - - - - - - - - - - - 400V, 30A, 10 Ω, 15V - - - -55°C~150°C TJ Tube 2012 - e3 yes Obsolete 1 (Unlimited) - - EAR99 Tin (Sn) - - 167W - NOT SPECIFIED - - NOT SPECIFIED - 3 - - - - Single 167W - Standard - - - Halogen Free - - N-CHANNEL - 600V 60A - 72ns - - - - - 1.7V @ 15V, 30A - - - Trench - 170nC 120A 81ns/190ns 650μJ (on), 650μJ (off) 20V 6.5V - - 21.4mm 16.25mm 5.3mm - No SVHC RoHS Compliant Lead Free
                                  NGTB30N60FWG
                                  NGTB30N60FWG

                                  ON Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Microchip Technology APT45GR65B
                                  Mfr. Тип
                                  APT45GR65B
                                  Anlielectronics Тип

                                  		Microchip Technology
                                  IGBT Transistors FG, IGBT, 650V, 45A, TO-247View in Development Tools Selector
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - - - - Through Hole TO-247-3 NO - TO-247 - - APT45GR65 - 650 V - 2.6 V 118 A 118 A 92 A 1 250 nA MICROSEMI CORP - APT45GR65B - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole - 150 °C Tube Active 543 W Active 2.26 Details Yes 433V, 45A, 4.3Ohm, 15V Ultra Fast NPT-IGBT - 1.340411 oz - Tube - - - - - - - - EAR99 - - - - - - compliant - - - - - - - Single - 543 - Standard 357 W - - - - - N-CHANNEL - - - - 55 C to + 150 C - - 650 V - 357 W - 2.4V @ 15V, 45A 92 A 118 A - NPT 650 V 203 nC 168 A 15ns/100ns 900µJ (on), 580µJ (off) 30 V 6.5 V - - 5.31 mm 21.46 mm 16.26 mm - - - -
                                    APT45GR65B
                                    APT45GR65B

                                    Microchip Technology
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    STMicroelectronics STGWT38IH130D
                                    Mfr. Тип
                                    STGWT38IH130D
                                    Anlielectronics Тип

                                    		STMicroelectronics
                                    IGBT Transistors 33A 1300V VF IGBT PowerMESH IGBT
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - - - Through Hole Through Hole TO-3P-3 Full Pack - - - 6.500007g - - - - 1.3kV 2.8V - - - - - - - - - - - - - - - - - - - - - - 960V, 20A, 10 Ω, 15V - 424 ns - -55°C~150°C TJ Tube - PowerMESH™ - - Obsolete 1 (Unlimited) - - EAR99 - - - 250W - - - - - STGWT38 - - - - - Single - - Standard 250W - - - - - - - 1.3kV 63A - - - 1300V - - - 2.8V @ 15V, 20A - - - - - 127nC 125A -/284ns 3.4mJ (off) - - - - - - - No - ROHS3 Compliant Lead Free
                                      STGWT38IH130D
                                      STGWT38IH130D

                                      STMicroelectronics
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Infineon Technologies IRG4BC30FD1PBF
                                      Mfr. Тип
                                      IRG4BC30FD1PBF
                                      Anlielectronics Тип

                                      		Infineon Technologies
                                      IGBT 600V 31A 100W TO220AB
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 16 Weeks - - Through Hole Through Hole TO-220-3 - 3 - - SILICON - - - 600V 1.8V - - - - - - - - - - - - - 1 - - - - - - - - 480V, 17A, 23 Ω, 15V - - - -55°C~150°C TJ Tube 2000 - - - Obsolete 1 (Unlimited) 3 Through Hole EAR99 - - 600V 100W - - - 31A - - - - - - - Single 100W COLLECTOR Standard - - POWER CONTROL - 24ns - N-CHANNEL - 1.8V 31A - 46 ns TO-220AB - - - 46 ns 1.8V @ 15V, 17A - - 740 ns - - 57nC 124A 22ns/250ns 370μJ (on), 1.42mJ (off) 20V 6V - - 15.24mm 10.54mm 4.69mm No No SVHC RoHS Compliant Lead Free
                                        IRG4BC30FD1PBF
                                        IRG4BC30FD1PBF

                                        Infineon Technologies
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                                        ON Semiconductor NGTG35N65FL2WG
                                        Mfr. Тип
                                        NGTG35N65FL2WG
                                        Anlielectronics Тип

                                        		ON Semiconductor
                                        ON SEMICONDUCTOR NGTG35N65FL2WG IGBT Single Transistor, UPS & Solar Application, 70 A, 1.7 V, 300 W, 650 V, TO-247, 3 Pins
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 6 Weeks ACTIVE (Last Updated: 5 days ago) Tin Through Hole Through Hole TO-247-3 - 3 - - SILICON - - - 650V 1.7V - - - - - - - - - - - - - 1 - - - - - - - - 400V, 35A, 10 Ω, 15V - - - -55°C~175°C TJ Tube 2015 - e3 yes Active 1 (Unlimited) 3 - - - - - 300W - - - - - - - - - - - Single - COLLECTOR Standard 300W - POWER CONTROL - - - N-CHANNEL - 650V 70A - - - - - - 108 ns 2V @ 15V, 35A - - 231 ns Field Stop - 125nC 120A 72ns/132ns 840μJ (on), 280μJ (off) - - - - 21.08mm 16.26mm 5.3mm - No SVHC ROHS3 Compliant Lead Free
                                          NGTG35N65FL2WG
                                          NGTG35N65FL2WG

                                          ON Semiconductor
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