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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Base Product Number Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Gate-Emitter Leakage Current Ihs Manufacturer Manufacturer Part Number Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Styles Number of Elements Package Part Life Cycle Code Pd - Power Dissipation Product Status Risk Rank RoHS Rohs Code Test Conditions Turn Off Delay Time Unit Weight Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Rise Time-Max Configuration Element Configuration Power Dissipation Case Connection Input Type Turn On Delay Time Power - Max Clamping Voltage Transistor Application Halogen Free Rise Time Polarity/Channel Type Collector Emitter Voltage (VCEO) Max Collector Current Reverse Recovery Time JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Input Capacitance Max Breakdown Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Turn Off Time-Nom (toff) IGBT Type Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Reverse Recovery Time (trr) Fall Time-Max (tf) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor FGH50N6S2D
Mfr. Тип
FGH50N6S2D
Anlielectronics Тип

ON Semiconductor
IGBT 600V 75A 463W TO247
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 4 Weeks ACTIVE, NOT REC (Last Updated: 5 days ago) - Through Hole Through Hole TO-247-3 - 3 - 6.39g SILICON - - 600V 1.9V - - - - - - - - - - - 1 - - - - - - - 390V, 30A, 3 Ω, 15V - - -55°C~150°C TJ Tube 2002 - e3 yes Not For New Designs 1 (Unlimited) 3 - EAR99 Tin (Sn) - - - 8541.29.00.95 600V 463W - - - 75A - - - - - - - Single 463W - Standard - - - POWER CONTROL - 15ns N-CHANNEL 600V 75A 55ns - - - - 28 ns 2.7V @ 15V, 30A 180 ns - 70nC 240A 13ns/55ns 260μJ (on), 250μJ (off) - - - - - - - No No SVHC ROHS3 Compliant Lead Free
    FGH50N6S2D
    FGH50N6S2D

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor ISL9V5045S3ST-F085
    Mfr. Тип
    ISL9V5045S3ST-F085
    Anlielectronics Тип

    		ON Semiconductor
    IGBT Transistors 500mJ, 450V EcoSPARK N-Chan Ignition IGBT
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 4 Weeks - - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - 3 - 1.31247g SILICON - - 480V 1.25V - - - - - - - - - - - 1 - - - - - - - 300V, 1k Ω, 5V - - -40°C~175°C TJ Tape & Reel (TR) 2017 Automotive, AEC-Q101, EcoSPARK® e3 yes Active 1 (Unlimited) 2 - - Tin (Sn) - - - - - 300W GULL WING NOT SPECIFIED not_compliant - NOT SPECIFIED ISL9V5045 - R-PSSO-G2 - 7000ns - Single - COLLECTOR Logic - 300W 450V AUTOMOTIVE IGNITION - - N-CHANNEL 1.6V 51A - - - - 480V 2800 ns 1.6V @ 4V, 10A 13600 ns - 32nC - -/10.8μs - 12V 2.2V - 15000ns - - - - - ROHS3 Compliant Lead Free
      ISL9V5045S3ST-F085
      ISL9V5045S3ST-F085

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      ON Semiconductor NGTB20N120IHLWG
      Mfr. Тип
      NGTB20N120IHLWG
      Anlielectronics Тип

      		ON Semiconductor
      ON SEMICONDUCTOR NGTB20N120IHLWG IGBT Single Transistor, 40 A, 1.8 V, 192 W, 1.2 kV, TO-247, 3 Pins
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 18 Weeks LAST SHIPMENTS (Last Updated: 3 days ago) - - Through Hole TO-247-3 NO 3 - - SILICON - - 1.2kV 1.8V - - - - - - - - - - - 1 - - - - - - - 600V, 20A, 10 Ω, 15V - - -55°C~150°C TJ Tube 2012 - e3 yes Obsolete 1 (Unlimited) 3 - EAR99 Tin (Sn) - - - - - 192W - - - - - - 3 - - - - Single 250W COLLECTOR Standard - 192W - POWER CONTROL - - N-CHANNEL 1.2kV 40A - - 1200V - - - 2.2V @ 15V, 20A 485 ns - 200nC 200A -/235ns 700μJ (off) 20V 6.5V - - 21.08mm 16.26mm 5.3mm No No SVHC RoHS Compliant Lead Free
        NGTB20N120IHLWG
        NGTB20N120IHLWG

        ON Semiconductor
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Infineon Technologies IGU04N60TAKMA1
        Mfr. Тип
        IGU04N60TAKMA1
        Anlielectronics Тип

        		Infineon Technologies
        Trans IGBT Chip N-CH 600V 8A 3-Pin TO-251 Tube
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 16 Weeks - - Through Hole Through Hole TO-251-3 Short Leads, IPak, TO-251AA - 3 - - SILICON - - 600V - - - - - - - - - - - - 1 - - - - - - - 400V, 4A, 47 Ω, 15V - - -40°C~175°C TJ Tube 2007 TrenchStop™ e3 yes Active 1 (Unlimited) 3 - EAR99 Tin (Sn) - - - - - 42W - NOT SPECIFIED not_compliant - NOT SPECIFIED - - - - - - Single - COLLECTOR Standard - 42W - POWER CONTROL Halogen Free - N-CHANNEL 600V 8A - - - - - 24 ns 2.05V @ 15V, 4A 268 ns Trench 27nC 12A 14ns/164ns 61μJ (on), 84μJ (off) - - - - - - - - - ROHS3 Compliant Contains Lead
          IGU04N60TAKMA1
          IGU04N60TAKMA1

          Infineon Technologies
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Infineon Technologies IGW75N65H5XKSA1
          Mfr. Тип
          IGW75N65H5XKSA1
          Anlielectronics Тип

          		Infineon Technologies
          Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 14 Weeks - - Through Hole Through Hole TO-247-3 - 3 - - SILICON - - 650V - - - - - - - - - - - - 1 - - - - - - - 400V, 75A, 8 Ω, 15V - - -40°C~175°C TJ Tube 2008 TrenchStop™ e3 yes Active 1 (Unlimited) 3 - EAR99 Tin (Sn) - - - - - 395W - NOT SPECIFIED - - NOT SPECIFIED - - - - - - Single - COLLECTOR Standard - 395W - POWER CONTROL Halogen Free - N-CHANNEL 650V 120A - - - - - 61 ns 2.1V @ 15V, 75A 232 ns Trench 160nC 300A 28ns/174ns 2.25mJ (on), 950μJ (off) - - - - - - - - - ROHS3 Compliant Lead Free
            IGW75N65H5XKSA1
            IGW75N65H5XKSA1

            Infineon Technologies
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            IXYS IXGH24N120C3
            Mfr. Тип
            IXGH24N120C3
            Anlielectronics Тип

            		IXYS
            Trans IGBT Chip N-CH 1.2KV 48A 3-Pin(3 Tab) TO-247
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 30 Weeks - - Through Hole Through Hole TO-247-3 - - - 6.500007g SILICON - - 1.2kV 3.6V - - - - - - - - - - - 1 - - - - - - - 600V, 20A, 5 Ω, 15V - - -55°C~150°C TJ Tube 2008 GenX3™ e1 yes Active 1 (Unlimited) 3 - - Tin/Silver/Copper (Sn/Ag/Cu) - - AVALANCHE RATED - - 250W - NOT SPECIFIED - - NOT SPECIFIED IXG*24N120 3 R-PSFM-T3 Not Qualified - - Single 250W COLLECTOR Standard - - - POWER CONTROL - - N-CHANNEL 1.2kV 48A - TO-247AD 1200V 1.9nF - 41 ns 4.2V @ 15V, 20A 430 ns PT 79nC 96A 16ns/93ns 1.16mJ (on), 470μJ (off) - - - - - - - - - ROHS3 Compliant Lead Free
              IXGH24N120C3
              IXGH24N120C3

              IXYS
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              International Rectifier IRG4RC10UDTRLP-IR
              Mfr. Тип
              IRG4RC10UDTRLP-IR
              Anlielectronics Тип

              		International Rectifier
              ULTRAFAST COPACK IGBT W/ULTRAFAS
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - - - - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - - D-PAK (TO-252AA) - - - - - - - 8.5 A - - - - - - International Rectifier - - - Bulk - - Active - - - 480V, 5A, 100Ohm, 15V - - -55°C ~ 150°C (TJ) - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Standard - 38 W - - - - - - - - - 600 V - - - 2.6V @ 15V, 5A - - 15 nC 34 A 40ns/87ns 140μJ (on), 120μJ (off) - - 28 ns - - - - - - - -
                IRG4RC10UDTRLP-IR
                IRG4RC10UDTRLP-IR

                International Rectifier
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Infineon Technologies IRG7PH46U-EP
                Mfr. Тип
                IRG7PH46U-EP
                Anlielectronics Тип

                		Infineon Technologies
                IGBT 1200V 108A TO247
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - - - Through Hole Through Hole TO-247-3 - 3 - - SILICON - - 1.2kV 1.7V - - - - - - - - - - - 1 - - - - - - - 600V, 40A, 10 Ω, 15V - - -55°C~175°C TJ Tube 2011 - - - Obsolete 1 (Unlimited) 3 - EAR99 - - - - - - 469W - - - - - - - - Not Qualified 55ns - Single - COLLECTOR Standard - 469W - POWER CONTROL - - N-CHANNEL 2V 130A - TO-247AD 1200V - - 80 ns 2V @ 15V, 40A 700 ns Trench 220nC 160A 45ns/410ns 2.56mJ (on), 1.78mJ (off) - 6V - 65ns - - - - No SVHC RoHS Compliant Lead Free
                  IRG7PH46U-EP
                  IRG7PH46U-EP

                  Infineon Technologies
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Infineon Technologies IRG4BC30KDSTRLP
                  Mfr. Тип
                  IRG4BC30KDSTRLP
                  Anlielectronics Тип

                  		Infineon Technologies
                  IGBT 600V 28A 100W D2PAK
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 13 Weeks - - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - 3 - 260.39037mg SILICON - - 600V - - - - - - - - - - - - 1 - - - - - - - 480V, 16A, 23 Ω, 15V - - -55°C~150°C TJ Tape & Reel (TR) 2000 - e3 - Last Time Buy 1 (Unlimited) 2 - - Matte Tin (Sn) - with Nickel (Ni) barrier - - LOW CONDUCTION LOSS - - 100W GULL WING 260 - - 30 IRG4BC30KD-SPBF - R-PSSO-G2 - - - Single - COLLECTOR Standard - 100W - MOTOR CONTROL - - N-CHANNEL 2.7V 28A 42 ns - - - 600V 100 ns 2.7V @ 15V, 16A 370 ns - 67nC 56A 60ns/160ns 600μJ (on), 580μJ (off) 20V 6V - 120ns - - - No - ROHS3 Compliant Lead Free
                    IRG4BC30KDSTRLP
                    IRG4BC30KDSTRLP

                    Infineon Technologies
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    STMicroelectronics STGW60H65DF
                    Mfr. Тип
                    STGW60H65DF
                    Anlielectronics Тип

                    		STMicroelectronics
                    IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 32 Weeks NRND (Last Updated: 8 months ago) - Through Hole Through Hole TO-247-3 - - - 6.500007g SILICON - - 650V 2.1V - - - - - - - - - - - 1 - - - - - - - 400V, 60A, 10 Ω, 15V 165 ns - -55°C~150°C TJ Tube - - e3 - Active 1 (Unlimited) 3 - EAR99 Tin (Sn) - - - - - 360W - - - - - STGW60 - R-PSFM-T3 - - - Single - - Standard 67 ns 360W - POWER CONTROL - - N-CHANNEL 350V 120A 62 ns - - - - 113 ns 1.9V @ 15V, 60A 247 ns Trench Field Stop 206nC 240A 67ns/165ns 1.5mJ (on), 1.1mJ (off) 20V - - - - - - No - ROHS3 Compliant Lead Free
                      STGW60H65DF
                      STGW60H65DF

                      STMicroelectronics
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      IXYS IXXH60N65B4H1
                      Mfr. Тип
                      IXXH60N65B4H1
                      Anlielectronics Тип

                      		IXYS
                      IGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 14 Weeks - - Through Hole Through Hole TO-247-3 - 3 - - - - - 650V 1.7V - - - - - - - - - - - - - - - - - - - 400V, 60A, 5 Ω, 15V - - -55°C~175°C TJ Tube 2006 GenX4™, XPT™ - - Active 1 (Unlimited) - - EAR99 - - - - - - 380W - - - - - - - - - - - Single 380W - Standard - - - - - - N-CHANNEL 2V 116A 150ns - - - - - 2V @ 15V, 60A - PT 95nC 230A 37ns/145ns 3.13mJ (on), 1.15mJ (off) 20V 6.5V - - - - - - No SVHC ROHS3 Compliant -
                        IXXH60N65B4H1
                        IXXH60N65B4H1

                        IXYS
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Infineon Technologies IGP40N65F5XKSA1
                        Mfr. Тип
                        IGP40N65F5XKSA1
                        Anlielectronics Тип

                        		Infineon Technologies
                        IGBT Transistors IGBT PRODUCTS
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 16 Weeks - - Through Hole Through Hole TO-220-3 - 3 - - - - - 650V 1.6V - - - - - - - - - - - - - - - - - - - 400V, 20A, 15 Ω, 15V - - -40°C~175°C TJ Tube 2008 TrenchStop® e3 yes Active 1 (Unlimited) - - EAR99 Tin (Sn) - - - - - 255W - NOT SPECIFIED - - NOT SPECIFIED - - - - - - Single 255W - Standard - - - - Halogen Free - N-CHANNEL 1.6V 74A - - - - - - 2.1V @ 15V, 40A - - 95nC 120A 19ns/160ns 360μJ (on), 100μJ (off) 20V 4.8V - - - - - - Unknown ROHS3 Compliant Lead Free
                          IGP40N65F5XKSA1
                          IGP40N65F5XKSA1

                          Infineon Technologies
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          IXYS IXGK28N140B3H1
                          Mfr. Тип
                          IXGK28N140B3H1
                          Anlielectronics Тип

                          		IXYS
                          IGBT 1400V 60A 300W TO264
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 8 Weeks - - Through Hole Through Hole TO-264-3, TO-264AA - - - 10.000011g SILICON - - 1.4kV 3V - - - - - - - - - - - 1 - - - - - - - 960V, 28A, 5 Ω, 15V - - -55°C~150°C TJ Tube 2010 GenX3™ e1 yes Obsolete 1 (Unlimited) 3 - - Tin/Silver/Copper (Sn/Ag/Cu) - - - - - 300W - NOT SPECIFIED - - NOT SPECIFIED - 3 R-PSFM-T3 Not Qualified - - Single 300W COLLECTOR Standard - - - POWER CONTROL - - N-CHANNEL 1.4kV 60A 350 ns - 1400V - - 66 ns 3.6V @ 15V, 28A 915 ns PT 88nC 150A 16ns/190ns 3.6mJ (on), 3.9mJ (off) 20V 5V - - - - - - - RoHS Compliant -
                            IXGK28N140B3H1
                            IXGK28N140B3H1

                            IXYS
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Atmel (Microchip Technology) APT50GT120JRDQ2
                            Mfr. Тип
                            APT50GT120JRDQ2
                            Anlielectronics Тип

                            		Atmel (Microchip Technology)
                            IGBT Transistors IGBT NPT Medium Frequency Combi 1200 V 50 A ISOTOPView in Development Tools Selector
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - - - - - SOT-227-4 - - - - - - 1.2 kV - - 72 A - 1 300 nA - - - 20 V, + 20 V + 150 C - - 55 C Screw Mount - - - 379 W - - Details - - - - - Tube - - - - - - - - - - - - - - - - - - - - - - - - - - Single - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                              APT50GT120JRDQ2
                              APT50GT120JRDQ2

                              Atmel (Microchip Technology)
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Microchip Technology APT40GR120B2SCD10
                              Mfr. Тип
                              APT40GR120B2SCD10
                              Anlielectronics Тип

                              		Microchip Technology
                              IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 - - - - - - - - - - - - 1.2 kV - 3.5 V 88 A - 1 - MICROSEMI CORP APT40GR120B2SCD10 - 30 V, + 30 V + 150 C - - 55 C Through Hole - - Obsolete 500 W - 5.65 Details Yes - - 0.218699 oz - Tube - - - - - - - - EAR99 - - - - - - - - - compliant - - - - - - - Single - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                                APT40GR120B2SCD10
                                APT40GR120B2SCD10

                                Microchip Technology
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                STMicroelectronics STGB10NB37LZ
                                Mfr. Тип
                                STGB10NB37LZ
                                Anlielectronics Тип

                                		STMicroelectronics
                                Trans IGBT Chip N-CH 440V 20A Automotive 3-Pin(2 Tab) D2PAK Tube
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - 3 - - SILICON - - 440V 1.2V - - - - - - - - - - - 1 - - - - - - - 328V, 10A, 1k Ω, 5V - - -65°C~175°C TJ Tube - PowerMESH™ e3 yes Obsolete 1 (Unlimited) 2 - EAR99 Matte Tin (Sn) - annealed - - VOLTAGE CLAMPING - - 125W GULL WING 245 - - 30 STGB10 3 R-PSSO-G2 - - - Single 125W COLLECTOR Standard - - - AUTOMOTIVE IGNITION - - N-CHANNEL 1.8V 20A - - - - - 860 ns 1.8V @ 4.5V, 10A 17800 ns - 28nC 40A 1.3μs/8μs 2.4mJ (on), 5mJ (off) - 2.4V - - 4.6mm 10.4mm 9.35mm No - ROHS3 Compliant -
                                  STGB10NB37LZ
                                  STGB10NB37LZ

                                  STMicroelectronics
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  STMicroelectronics STGP19NC60WD
                                  Mfr. Тип
                                  STGP19NC60WD
                                  Anlielectronics Тип

                                  		STMicroelectronics
                                  IGBT 600V 40A 125W TO220
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - - Tin Through Hole Through Hole TO-220-3 - 3 - - SILICON - - 600V 2.5V - - - - - - - - - - - 1 - - - - - - - 390V, 12A, 10 Ω, 15V 90 ns - -55°C~150°C TJ Tube - PowerMESH™ e3 - Obsolete Not Applicable 3 Through Hole EAR99 - - - - - - 125W - - - - - STGP19 3 - - - - Single 125W - Standard 25 ns - - POWER CONTROL - 7ns N-CHANNEL 600V 40A 31ns TO-220AB - - - 33 ns 2.5V @ 15V, 12A 204 ns - 53nC - 25ns/90ns 81μJ (on), 125μJ (off) 20V 5.75V - - - - - No No SVHC ROHS3 Compliant Lead Free
                                    STGP19NC60WD
                                    STGP19NC60WD

                                    STMicroelectronics
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Microchip Technology APT44GA60BD30
                                    Mfr. Тип
                                    APT44GA60BD30
                                    Anlielectronics Тип

                                    		Microchip Technology
                                    IGBT Transistors FG, IGBT-COMBI, 600V, TO-247View in Development Tools Selector
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - Production (Last Updated: 2 months ago) - Through Hole Through Hole TO-247-3 - - TO-247 [B] - - APT44GA60 600 V 600 V 2 V 78 A 78 A 1 - - - - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole - Tube - 337 W Active - Details - 400V, 26A, 4.7Ohm, 15V - - -55°C ~ 150°C (TJ) Tube - POWER MOS 8™ - - - - - - - - 150 °C -55 °C - - - 337 W - - - - - - - - - - Single Single - - Standard - 337 W - - - - - 600 V 78 A - - 600 V - - - 2.5V @ 15V, 26A - PT 128 nC 130 A 16ns/84ns 409µJ (on), 258µJ (off) - - - - - - - No - - -
                                      APT44GA60BD30
                                      APT44GA60BD30

                                      Microchip Technology
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Infineon Technologies IRGI4086PBF
                                      Mfr. Тип
                                      IRGI4086PBF
                                      Anlielectronics Тип

                                      		Infineon Technologies
                                      IGBT 300V 25A 43W TO220AB
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - - - Through Hole Through Hole TO-220-3 Full Pack - 3 TO-220AB Full-Pak - - - - 300V 1.55V - 25A - - - - - - - - - - - - - - - - - 196V, 25A, 10Ohm - - -40°C~150°C TJ Tube 2009 - - - Obsolete 1 (Unlimited) - - - - 150°C -40°C - - - 43W - - - - - - - - - - - Single 43W - Standard - 43W - - - - - 2.96V 25A - - 300V - - - 2.96V @ 15V, 120A - Trench 65nC - 36ns/112ns - - - - - - - - No No SVHC RoHS Compliant -
                                        IRGI4086PBF
                                        IRGI4086PBF

                                        Infineon Technologies
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
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                                        STMicroelectronics STGWT20V60DF
                                        Mfr. Тип
                                        STGWT20V60DF
                                        Anlielectronics Тип

                                        		STMicroelectronics
                                        IGBT 600V 40A 167W TO3P-3
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 32 Weeks - - Through Hole Through Hole TO-3P-3, SC-65-3 - 3 - - - - - 600V 2.3V - - - - - - - - - - - - - - - - - - - 400V, 20A, 15V - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - - EAR99 - - - - - - 167W - - - - - STGWT20 - - - - - Single 167W - Standard - - - - - - N-CHANNEL 600V 40A 40ns - - - - - 2.2V @ 15V, 20A - Trench Field Stop 116nC 80A 38ns/149ns 200μJ (on), 130μJ (off) 20V - - - 26.7mm 15.7mm 5.7mm No - ROHS3 Compliant -
                                          STGWT20V60DF
                                          STGWT20V60DF

                                          STMicroelectronics
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
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