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Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Lifecycle Status Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Material Weight Number of Terminals Transistor Element Material Base Product Number Brand Breakdown Voltage / V Development Kit ECCN (US) Factory Pack QuantityFactory Pack Quantity Forward Transconductance - Min Gate-Source Voltage (Max) HTS Id - Continuous Drain Current Ihs Manufacturer Lead Shape Manufacturer Manufacturer Part Number Maximum Drain Gate Voltage Maximum Drain Gate Voltage (V) Maximum Drain Source Voltage (V) Maximum Gate Source Voltage (V) Maximum Operating Temperature Maximum Operating Temperature (°C) Maximum Power Dissipation (mW) Mfr Military Minimum Drain Saturation Current (mA) Minimum Operating Temperature Minimum Operating Temperature (°C) Moisture Sensitive Moisture Sensitivity Levels Mounting Mounting Styles Number of Elements Operating Temperature (Max.) Operating Temperature (Min.) Operating Temperature Classification Operating Temperature-Max Package Package Body Material Package Description Package Height Package Length Package Shape Package Style Package Type Package Width Part # Aliases Part Life Cycle Code Part Package Code PCB changed Pd - Power Dissipation Product Status Rad Hardened Reflow Temperature-Max (s) Risk Rank RoHS Rohs Code Shipping Restrictions Standard Package Name Supplier Package Transistor Polarity Unit Weight Vds - Drain-Source Breakdown Voltage Vgs - Gate-Source Breakdown Voltage Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Type Terminal Finish Max Operating Temperature Min Operating Temperature Applications HTS Code Subcategory Voltage - Rated DC Max Power Dissipation Technology Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Operating Frequency Configuration Number of Channels Element Configuration Operating Mode Power Dissipation Case Connection Output Power Power - Max FET Type Transistor Application Input Capacitance (Ciss) (Max) @ Vds Drain to Source Voltage (Vdss) Polarity/Channel Type Product Type Transistor Type Continuous Drain Current (ID) JEDEC-95 Code Gate to Source Voltage (Vgs) Gain Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Input Capacitance DS Breakdown Voltage-Min Channel Type FET Technology Power Dissipation-Max (Abs) Drain to Source Resistance Feedback Cap-Max (Crss) Current - Drain (Idss) @ Vds (Vgs=0) Voltage - Cutoff (VGS off) @ Id Voltage - Breakdown (V(BR)GSS) Resistance - RDS(On) Product Category Height Length Width REACH SVHC RoHS Status Lead Free
Central Semiconductor CMPF4392 TR
Mfr. Тип
CMPF4392 TR
Anlielectronics Тип

Central Semiconductor
Trans JFET N-CH 40V Si 3-Pin SOT-23 T/R
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 - - Surface Mount TO-236-3, SC-59, SOT-23-3 YES - SOT-23 Si - 3 SILICON - - - - EAR99 - - - 8541.21.00.95 - CENTRAL SEMICONDUCTOR CORP Gull-wing Central Semiconductor Corp CMPF4392TR - 40 40 40 - 150 350 - No 25 - -65 - - Surface Mount - 1 - - - 150 °C - PLASTIC/EPOXY - 0.96(Max) 3.05(Max) RECTANGULAR SMALL OUTLINE - 1.4(Max) - Active - 3 - - - NOT SPECIFIED 5.07 - No - SOT SOT-23 - - - - -65°C ~ 150°C (TJ) Tape and Reel - -- e0 No Active - - - EAR99 - TIN LEAD - - - 8541.21.00.95 Other Transistors - - - DUAL GULL WING NOT SPECIFIED unknown - - - 3 R-PDSO-G3 Not Qualified - Single - - DEPLETION MODE - - - 350mW N-Channel SWITCHING 14pF @ 20V 40V N-CHANNEL - - - - - - - 60 Ω - - 40 V N JUNCTION 0.35 W - 3.5 pF 25mA @ 20V 2V @ 1nA 40V 60 Ohms - - - - - Supplier Unconfirmed -
    CMPF4392 TR
    CMPF4392 TR

    Central Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor FJZ594JCTF
    Mfr. Тип
    FJZ594JCTF
    Anlielectronics Тип

    		ON Semiconductor
    Trans JFET N-CH 1mA 3-Pin SOT-623F T/R
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - Surface Mount Surface Mount SOT-623F - 3 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 150°C TJ Tape & Reel (TR) 2007 - - - Obsolete 1 (Unlimited) - - - - - - - - - - 20V 100mW - - - - - 1mA - - - - - - - - Single - - - - - N-Channel - 3.5pF @ 5V - - - - 1mA - -20V - - - - - - - - - - - 150μA @ 5V 600mV @ 1μA 20V - - - - - - RoHS Compliant Lead Free
      FJZ594JCTF
      FJZ594JCTF

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Qorvo TGF2978-SM
      Mfr. Тип
      TGF2978-SM
      Anlielectronics Тип

      		Qorvo
      RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 - - - QFN-20 - - - - - - - - - - TGF2978-SMEVB1 - 50 - - - 1.3 A - - - - - - - - + 225 C - - - - - - - Yes - - SMD/SMT - - - - - - - - - - - - - - TGF2978 1127373 - - - 33 W - - - - Details - This product may require additional documentation to export from the United States. - - N-Channel 0.004339 oz 32 V - 2.7 V - Tray - TGF2978 - - - - - - - GaN SiC HEMT - - - - - - - - - - - - - - - - - - - DC to 12 GHz Single 1 Channel - - - - 19 W - - - - - - - HEMT - - - 11 dB - - - - - - - - - - - - - - - 0.203 mm 4 mm 3 mm - - -
        TGF2978-SM
        TGF2978-SM

        Qorvo
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor J111RLRAG
        Mfr. Тип
        J111RLRAG
        Anlielectronics Тип

        		ON Semiconductor
        JFET N-CH 35V 0.35W TO92
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 LAST SHIPMENTS (Last Updated: 2 weeks ago) - Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) NO 3 - - - - SILICON - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -65°C~150°C TJ Tape & Reel (TR) 2006 - e1 yes Obsolete 1 (Unlimited) 3 - - - Tin/Silver/Copper (Sn/Ag/Cu) - - - 8541.21.00.95 - 35V 350mW - BOTTOM - 260 - 50mA 40 J111 3 - Not Qualified - - - Single DEPLETION MODE - - - - N-Channel CHOPPER - 35V - - - - - 35V - - - - - - - JUNCTION - - 5 pF 20mA @ 15V 3V @ 1μA - 30Ohm - - - - - RoHS Compliant Lead Free
          J111RLRAG
          J111RLRAG

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          ON Semiconductor MMBF4392LT1
          Mfr. Тип
          MMBF4392LT1
          Anlielectronics Тип

          		ON Semiconductor
          JFET N-CH 30V 0.225W SOT23
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 LAST SHIPMENTS (Last Updated: 3 days ago) - - SOT-23-3 YES 3 - - - - SILICON - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1 150°C - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Cut Tape (CT) 2006 - e0 no Obsolete 1 (Unlimited) 3 - EAR99 - Tin/Lead (Sn/Pb) - - - 8541.21.00.95 - 30V 225mW - DUAL GULL WING 240 not_compliant 50mA 30 - 3 - Not Qualified - - - Single DEPLETION MODE - - - - - SWITCHING - 30V N-CHANNEL - - - - 30V - - 60Ohm 30V 14pF - - JUNCTION - - - - - - - - - - - - Non-RoHS Compliant Contains Lead
            MMBF4392LT1
            MMBF4392LT1

            ON Semiconductor
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor FJZ594JBTF
            Mfr. Тип
            FJZ594JBTF
            Anlielectronics Тип

            		ON Semiconductor
            Trans JFET N-CH 1mA 3-Pin SOT-623F T/R
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - Surface Mount Surface Mount SOT-623F - 3 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 150°C TJ Tape & Reel (TR) 2007 - - - Obsolete 1 (Unlimited) - - - - - - - - - - 20V 100mW - - - - - 1mA - - - - - - - - Single - - - - - N-Channel - 3.5pF @ 5V - - - - 1mA - -20V - - - - - - - - - - - 150μA @ 5V 600mV @ 1μA 20V - - - - - - RoHS Compliant Lead Free
              FJZ594JBTF
              FJZ594JBTF

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              ON Semiconductor 2N3820
              Mfr. Тип
              2N3820
              Anlielectronics Тип

              		ON Semiconductor
              JFET P-CH 20V 0.35W TO92
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - Through Hole Through Hole TO-226-3, TO-92-3 (TO-226AA) - 3 TO-92-3 - 201mg - - - - 20V - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Bulk 2002 - - - Obsolete 1 (Unlimited) - Through Hole - - - 150°C -55°C - - - -20V 350mW - - - - - 15mA - 2N3820 - - - - - - Single - 350mW - - 350mW P-Channel - 32pF @ 10V -10V - - - 7.65mA - 8V - - - 20V 32pF - - - - - - 300μA @ 10V 8V @ 10μA 20V - - 6.35mm 6.35mm 6.35mm No SVHC RoHS Compliant Lead Free
                2N3820
                2N3820

                ON Semiconductor
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                NTE Electronics, Inc NTE457
                Mfr. Тип
                NTE457
                Anlielectronics Тип

                		NTE Electronics, Inc
                JFET-N-CH GEN PURP AMP/SW
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - - Through Hole TO-226-3, TO-92-3 (TO-226AA) NO - TO-92 - - 3 SILICON - - - - - - - 25(V) - - NTE ELECTRONICS INC - NTE Electronics Inc NTE457 - - - - - - - NTE Electronics, Inc - - - - - - Through Hole - 1 125C -65C Military - Bag PLASTIC/EPOXY CYLINDRICAL, O-PBCY-W3 - - ROUND CYLINDRICAL TO-92 - - Active TO-92 - - Active No NOT SPECIFIED 1.58 - Yes - - - - - - - 125°C (TJ) - - - - - - - - - EAR99 - - - - - 8541.21.00.95 Other Transistors - - - BOTTOM WIRE NOT SPECIFIED unknown - - - 3 O-PBCY-W3 Not Qualified - Single - - DEPLETION MODE - - - 310 mW N-Channel SWITCHING 7pF @ 15V 25 V N-CHANNEL - - - TO-92 - - - - - - 25 V N JUNCTION 0.31 W - 3 pF 1 mA @ 15 V 500 mV @ 10 nA 25 V - - - - - - - -
                  NTE457
                  NTE457

                  NTE Electronics, Inc
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor 2SK715V-AC
                  Mfr. Тип
                  2SK715V-AC
                  Anlielectronics Тип

                  		ON Semiconductor
                  Trans JFET N-CH 15V 50mA Si 3-Pin SPA Box
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - - Through Hole SC-72 NO 3 - - - - SILICON - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 125°C TJ Tape & Reel (TR) 2012 - - yes Obsolete 1 (Unlimited) 3 - EAR99 - Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) - - - - - - 300mW - BOTTOM - - - - - 2SK715 3 - - - - - Single DEPLETION MODE - - - - N-Channel AMPLIFIER 10pF @ 5V 15V - - - 50mA TO-92 - - 0.05A - - - 15V - JUNCTION - - - 10mA @ 5V 600mV @ 100μA - - - - - - - RoHS Compliant Lead Free
                    2SK715V-AC
                    2SK715V-AC

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    ON Semiconductor J177
                    Mfr. Тип
                    J177
                    Anlielectronics Тип

                    		ON Semiconductor
                    JFET P-CH 30V 0.35W TO92
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - Through Hole Through Hole TO-226-3, TO-92-3 (TO-226AA) - 3 TO-92-3 - 201mg - - - - 30V - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Bulk - - - - Obsolete 1 (Unlimited) - Through Hole - - - 150°C -55°C - - - -30V 350mW - - - - - 20mA - J177 - - - - - - Single - 350mW - - 350mW P-Channel - - 30V - - - -20mA - 30V - - - - - - - - - 300Ohm - 1.5mA @ 15V 800mV @ 10nA 30V 300Ohms - - - - No SVHC RoHS Compliant Lead Free
                      J177
                      J177

                      ON Semiconductor
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Microchip Technology 2N4391UB
                      Mfr. Тип
                      2N4391UB
                      Anlielectronics Тип

                      		Microchip Technology
                      N CHANNEL JFET
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - - - TO-18-3 - - - - - - - 2N4391 Microchip Technology - - - 1 - - - - - - Microchip - - - - - - - - Microchip Technology - - - - - - - Through Hole - - - - - Bulk - - - - - - - - - - - - - Active - - - N - - - - - - - - - - - - - - - - - - - JFET - - - - - Transistors - - Si - - - - - - - - - - - - - - - - - - - - - - - - JFETs - - - - - - - - - - - - - - - - - - - JFET - - - - - -
                        2N4391UB
                        2N4391UB

                        Microchip Technology
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Toshiba 2SK389BL
                        Mfr. Тип
                        2SK389BL
                        Anlielectronics Тип

                        		Toshiba
                        TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-10M1A, 7 PIN, FET General Purpose Small Signal
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                          2SK389BL
                          2SK389BL

                          Toshiba
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Qorvo QPD1013SR
                          Mfr. Тип
                          QPD1013SR
                          Anlielectronics Тип

                          		Qorvo
                          RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - - DFN-6 - - - - - - - - - - QPD1013EVB01 - 100 - - - 1.7 A - - - - 65 V - - - + 85 C - - - - - - 40 C - Yes - - SMD/SMT - - - - - - - - - - - - - - QPD1013 - - - 67 W - - - - Details - - - - N-Channel 0.274843 oz - - - Reel - QPD1013 - - - - - - - - - - - Military Radar, Jammers,Test Instrumentation,Wideband or Narrowband Amplifiers,Land Mobile and Military Radio Communications - - - - - - - - - - - - - - - 1.2 GHz to 2.7 GHz Single Triple Drain - - - - - 178 W - - - - - - - HEMT - - - 21.8 dB - - - - - - - - - - - - - - - - - - - - -
                            QPD1013SR
                            QPD1013SR

                            Qorvo
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Qorvo QPD1011SR
                            Mfr. Тип
                            QPD1011SR
                            Anlielectronics Тип

                            		Qorvo
                            RF JFET Transistors .03-1.2GHz 7W 50V GaN
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - - - SMD-8 - - - - - - - - - - QPD1011EVB01 - 100 - - - 1.46 A - - - - 55 V - - - + 85 C - - - - - - 40 C - Yes - - SMD/SMT - - - - - - - - - - - - - - QPD1011 - - - 13 W - - - - Details - - - - N-Channel - 50 V 145 V - Reel - QPD1011 - - - - - - - - - - - - - - - - - - - - - - - - - - - 30 MHz to 1200 MHz - - - - - - 8.7 W - - - - - - - HEMT - - - 21 dB - - - - - - - - - - - - - - - - - - - - -
                              QPD1011SR
                              QPD1011SR

                              Qorvo
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Vishay 2N5434E3
                              Mfr. Тип
                              2N5434E3
                              Anlielectronics Тип

                              		Vishay
                              Transistor
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 - - - - NO - - - - - - - - - - - - - - - - VISHAY INTERTECHNOLOGY INC - Vishay Intertechnologies 2N5434-E3 - - - - - - - - - - - - - 1 - - - - - - 150 °C - - , - - - - - - - Active - - - - - - 5.6 - Yes - - - - - - - - - - - e3 - - - - - - - Matte Tin (Sn) - - - - Other Transistors - - - - - - unknown - - - - - - - - - - - - - - - - - - - N-CHANNEL - - - - - - - - - - - - JUNCTION 0.3 W - - - - - - - - - - - - -
                                2N5434E3
                                2N5434E3

                                Vishay
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Microchip Technology 2N4416AUB
                                Mfr. Тип
                                2N4416AUB
                                Anlielectronics Тип

                                		Microchip Technology
                                JFET
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Microchip Technology - - - - - - - - - - - - - Bulk - - - - - - - - - - - - - Active - - - - - - - - - - - - - - - * - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                                  2N4416AUB
                                  2N4416AUB

                                  Microchip Technology
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Microchip Technology 2N3824
                                  Mfr. Тип
                                  2N3824
                                  Anlielectronics Тип

                                  		Microchip Technology
                                  JFET
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - - - - NO - - - - 4 SILICON - - - - - - - - - - Texas INC - Texas 2N3824 - - - - - - - Microchip Technology - - - - - - - - 1 - - - 200 °C Bulk METAL - - - ROUND CYLINDRICAL - - - Obsolete - - - Active - NOT SPECIFIED 8.59 - No - - - - - - - - - - * - - - - - - EAR99 - - - - - 8541.21.00.95 Other Transistors - - - BOTTOM WIRE NOT SPECIFIED not_compliant - - - - O-MBCY-W4 Not Qualified - SINGLE - - DEPLETION MODE - ISOLATED - - - CHOPPER - - N-CHANNEL - - - TO-72 - - - 250 Ω - - 50 V - JUNCTION 0.3 W - 3 pF - - - - - - - - - - -
                                    2N3824
                                    2N3824

                                    Microchip Technology
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Microchip Technology 2N5277
                                    Mfr. Тип
                                    2N5277
                                    Anlielectronics Тип

                                    		Microchip Technology
                                    JFET
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - - - - NO - - - - 3 SILICON - Microchip Technology - - - 1 - - - - CRYSTALONICS INC - Microchip 2N5277 - - - - - - - Microchip Technology - - - - - - - - 1 - - - - Bulk METAL CYLINDRICAL, O-MBCY-W3 - - ROUND CYLINDRICAL - - - Contact Manufacturer TO-5 - - Active - - 4.75 - - - - - - - - - - - - * - - - - - - - - - - - - - Transistors - - - BOTTOM WIRE - unknown - - - 3 O-MBCY-W3 Not Qualified - SINGLE - - DEPLETION MODE - GATE - - - - - - N-CHANNEL JFETs - - TO-5 - - - - - - - - JUNCTION - - 5 pF - - - - JFET - - - - - -
                                      2N5277
                                      2N5277

                                      Microchip Technology
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      onsemi TF218THC-5-TL-H
                                      Mfr. Тип
                                      TF218THC-5-TL-H
                                      Anlielectronics Тип

                                      		onsemi
                                      N CHANNEL SILICON JFET FOR ELECT
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - onsemi - - - - - - - - - - - - - Bulk - - - - - - - - - - - - - Active - - - - - - - - - - - - - - - * - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                                        TF218THC-5-TL-H
                                        TF218THC-5-TL-H

                                        onsemi
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Qorvo QPD1025L
                                        Mfr. Тип
                                        QPD1025L
                                        Anlielectronics Тип

                                        		Qorvo
                                        RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 - - - NI-1230-4 - - - - - - - - - - QPD1025LEVB1 - 18 - - - 28 A - - - - 225 V - - - + 85 C - - - - - - 40 C - Yes - - SMD/SMT - - - - - - - - - - - - - - - - - - 758 W - - - - Details - - - - - 1.399148 oz - - - Tray - QPD1025L - - - - - - - - - - - Avionics, IFF Transponders - - - - - - - - - - - - - - - 1 GHz to 1.1 GHz Dual Gate Dual Drain - - - - - 1.5 kW - - - - - - - HEMT - - - 22.9 dB - - - - - - - - - - - - - - - - - - - - -
                                          QPD1025L
                                          QPD1025L

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