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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mounting type | Mounting Type | Surface Mount | Housing material | Housing Material | Weight | Number of Terminals | Transistor Element Material | Exterior Housing Material | Body diameter | Category | Characteristic | Coil resistance | Color actuator/housing | Construction features | Contact Pitch | Date Of Intro | Dielectric strength | Dielectric Strength | Drain Current-Max (ID) | Forward voltage drop (Vf) | Gross weight | Gross Weight | Ihs Manufacturer | Installation hole size | Maximum allowable average forward current It(av) | Maximum current | Maximum forward current | Maximum Forward Current | Maximum voltage | Mounting hole size | Mounting method | Mounting Method | Mounting Style | Net Weight | Noal Capacitance | Noal capacitance tolerance | Noal current | Noal voltage | Nominal Current | Nominal voltage | Nominal Voltage | Number of electrical cycles (switching) | Number of switching cycles (electrical) | Number of Switching Cycles (electrical) | Operate voltage | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Plunger shape/color | Protection class | Protection degree | Pushbutton shape/color | Rated coil voltage | Release voltage | Repetitive impulse reverse voltage Vrrm | Repetitive Peak Reverse Current | Repetitive pulse reverse current (Irrm) | Rohs Code | Service life | Surge forward current | Switching cycles (electrical) | Switching scheme | Switching Scheme | Time | Transport package size/quantity | Transport packaging size/quantity | Transport Packaging size/quantity | Transport Packaging Size/Quantity | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Voltage drop | Voltage Drop | Operating temperature | JESD-609 Code | Pbfree Code | ECCN Code | Connector type | Connector Type | Type | Terminal Finish | Additional Feature | Pitch | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Lead pitch | Number of contacts | Number of Contacts | Dielectric | Contact resistance | Contact Resistance | Configuration | Insulation resistance | Insulation Resistance | Voltage | Operating Mode | Case Connection | Switch Type | Transistor Application | Polarity/Channel Type | Operating temperature range | Operating Temperature Range | Rated current | Rated Current | Switching voltage | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Isolation Voltage | Power | Rated Voltage | Repetitive peak reverse voltage | Repetitive Peak Reverse Voltage | Feedback Cap-Max (Crss) | Highest Frequency Band | Saturation Current | Features | Standard | Power Gain-Min (Gp) | Temperature | Degree of protection | Diameter | Height | Length | Width |
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  | Mfr. ТипSI4386DY-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | 8 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | 11 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | ROHS COMPLIANT, SOP-8 | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | - | - | - | - | - | - | - | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | - | - | Matte Tin (Sn) | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | - | R-PDSO-G8 | Not Qualified | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | - | - | - | - | 0.007 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 3.1 W | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | ||
| SI4386DY-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7115DN-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 2.3A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks, 3 Days | - | - | YES | - | - | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | 2.3 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | SQUARE | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | - | - | Matte Tin (Sn) - annealed | - | - | DUAL | C BEND | 260 | - | compliant | 30 | - | - | S-XDSO-C5 | Not Qualified | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | P-CHANNEL | - | - | - | - | - | - | 0.295 Ω | 15 A | 150 V | 11.25 mJ | METAL-OXIDE SEMICONDUCTOR | 52 W | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | ||
| SI7115DN-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипARF448BAnlielectronics Тип | Advanced Power Technology |
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | NO | - | - | - | 3 | SILICON | 1 | - | Climatic - 40/085/21 | - | - | - | - | - | - | - | 1500 (Phase-phase) / 2250 (Phase-ground) V | 15 A | - | - | - | ADVANCED POWER TECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 600 A | - | 250/440 (50/ 60 Hz) V | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | TO-247, 3 PIN | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | - | - | - | - | - | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e0 | - | EAR99 | - | - | Three-phase network filter DL series | Tin/Lead (Sn/Pb) | HIGH RELIABILITY | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | - | - | - | - | - | - | SINGLE | - | - | - | ENHANCEMENT MODE | SOURCE | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | TO-247AD | - | - | 450 V | - | METAL-OXIDE SEMICONDUCTOR | 230 W | - | - | - | - | - | - | VERY HIGH FREQUENCY BAND | - | - | - | - | - | - | - | - | - | - | ||
| ARF448B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипARF448BAnlielectronics Тип | Microchip Technology Inc |
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | NO | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | 15 A | - | - | - | MICROCHIP TECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | TO-247, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | - | - | - | - | - | - | - | No | - | - | - | - | - | - | - | - | - | - | 65 ns | 25 ns | - | - | - | e0 | - | EAR99 | - | - | - | Tin/Lead (Sn/Pb) | HIGH RELIABILITY | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | - | - | R-PSFM-T3 | Not Qualified | - | - | - | - | - | - | SINGLE | - | - | - | ENHANCEMENT MODE | SOURCE | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | TO-247 | - | - | 450 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | 100 pF | VERY HIGH FREQUENCY BAND | - | - | - | 13 dB | - | - | - | - | - | - | ||
| ARF448B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBUK761R7-40EAnlielectronics Тип | Nexperia |
Power Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | 2017-02-01 | - | - | 120 A | - | - | - | NEXPERIA | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | D2PAK-3/2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | - | - | TIN | AVALANCHE RATED | - | SINGLE | GULL WING | 245 | - | not_compliant | 30 | - | AEC-Q101; IEC-60134 | R-PSSO-G2 | - | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | - | - | - | - | - | - | 0.0016 Ω | 1306 A | 40 V | 801 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | ||
| BUK761R7-40E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF7807ZTRPBFAnlielectronics Тип | International Rectifier |
Description: Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | 8 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | 11 A | - | 0.09 | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | Through-hole | - | 0.15 uFmin | ±10%min | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | - | - | - | - | - | - | - | - | - | Yes | - | - | - | - | - | - | - | 46*31*42/20000 | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | - | MLCC | Matte Tin (Sn) | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | 8 | - | R-PDSO-G8 | - | 5.08 mm | - | - | Y5V | - | - | SINGLE WITH BUILT-IN DIODE | - | - | 50 V | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | - | - | - | MS-012AA | 0.0138 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | ||
| IRF7807ZTRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBUK98150-55Anlielectronics Тип | Nexperia |
Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | thermoplastic (UL 94 V-0) | - | 4 | SILICON | 1 | - | - | - | - | - | - | 2.54 mm | - | - | 500 (50 Hz, 1 min.) V | 5.5 A | - | - | 2.01 | NEXPERIA | - | - | - | - | - | - | - | - | PCB mounting - soldering | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | Yes | - | - | - | - | - | - | - | - | - | 55*31*41.5/5200 | - | - | - | - | - | e3 | - | EAR99 | - | M - plug | - | TIN | - | - | DUAL | GULL WING | 260 | 9.1 mm | compliant | 30 | - | AEC-Q101; IEC-60134 | R-PDSO-G4 | - | - | - | 14 (7 x 2) | - | - | 20 mΩ max | SINGLE WITH BUILT-IN DIODE | - | 1000 MΩ min | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | - | 0 …+85 °C | - | - | - | - | 0.15 Ω | 30 A | 55 V | 15 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | 9.3 (housing) + 3.10 mm | - | 25.38 mm | ||
| BUK98150-55 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7450DP-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 3.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | 5 | SILICON | 1 | - | - | - | - | metal (Ф10 mm)/black | side-mounted contacts (for soldering) | - | - | 1000 (50 Hz / 1 min.) V | - | 3.2 A | - | 24.40 | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 125/250 (AC) V | 12.2 mm | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | UNSPECIFIED | - | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | Yes | - | - | 50000 min | 2x ON - ON with latching, DPDT (6P) | - | - | 42*28*18.5/500 | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | - | PBS-24 series pushbutton switch | Matte Tin (Sn) | - | - | DUAL | C BEND | 260 | 42.2 mm | compliant | 30 | - | - | R-XDSO-C5 | Not Qualified | - | - | - | - | 20 mΩ max | - | SINGLE WITH BUILT-IN DIODE | 500 (at Uisol.dc=500 V) MΩ min | - | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | - | - | 5/2 A | - | - | - | 0.09 Ω | 40 A | 200 V | - | METAL-OXIDE SEMICONDUCTOR | 5.2 W | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | 17.2 (housing); 27 (total) mm | - | 12.2 (housing); 23.5 (total) mm | ||
| SI7450DP-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRLR3410Anlielectronics Тип | International Rectifier |
Description: Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | 100 g | 2 | SILICON | 1 | - | - | - | L (high-sensitivity) - 1600/ D (normal) - 1280 Ohm | - | - | - | - | between open contacts and coil - 1500 VAC 1min. V | - | 17 A | - | 8.00 | - | INTERNATIONAL RECTIFIER CORP | - | - | switching - 10 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 100000 min | - | - | 18.0 (max) V | 175 °C | -55 °C | PLASTIC/EPOXY | PLASTIC, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-252AA | - | - | - | - | 24 DC (Umaks.=31.2) V | 1.2 V | - | - | - | No | - | - | - | - | SPDT; form C | operation - 10/ release - 5 ms | - | 34*21*16/1000 | - | - | - | - | - | - | - | e0 | - | EAR99 | - | - | T73 Series Electromagnetic Relay | TIN LEAD | AVALANCHE RATED, ULTRA-LOW RESISTANCE | - | SINGLE | GULL WING | 240 | 19.5 mm | unknown | 30 | 3 | - | R-PSSO-G2 | Not Qualified | - | - | - | - | 50 (at Udc=6V; I=1A) mOhm mOhm max | - | SINGLE WITH BUILT-IN DIODE | 100 (at Uispl.dc=500 V) MOhm min | - | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | -40…+85 °C | - | - | - | 250 AC/ 30 DC V | TO-252AA | 0.125 Ω | 60 A | 100 V | 150 mJ | METAL-OXIDE SEMICONDUCTOR | 79 W | - | coil - L (high-sensitivity) - 360/ D (normal) - 450 (DC) mW | - | - | - | 90 pF | - | 1 | - | safety - UL TUV CE CQC | - | - | - | - | 15.9 (housing) mm | - | 15.5 mm | ||
| IRLR3410 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBF5484Anlielectronics Тип | EDI Diodes (Electronic Devices Inc) |
Description: Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Terminals (faston) | - | YES | - | - | 19 g | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | 20.10 | - | ELECTRONIC DEVICES INC | - | - | - | 35 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | - | - | - | - | - | - | - | - | - | - | - | - | 400 A | - | - | - | - | - | 42*23*24/500 | - | - | - | - | 1.2 V | - | - | - | - | EAR99 | - | - | diode bridge KBPC series | - | - | - | DUAL | GULL WING | - | 28 | unknown | - | - | - | R-PDSO-G3 | Not Qualified | - | - | - | - | - | - | 1 phase | - | - | - | DEPLETION MODE | - | - | - | N-CHANNEL | -55…+125°C | - | - | - | - | - | - | - | - | - | JUNCTION | - | - | - | - | 1000 V | - | - | - | - | - | - | - | - | - | - | 11 | - | 28 | ||
| MMBF5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBFJ176Anlielectronics Тип | Texas Instruments |
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Terminals | YES | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 214.00 | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | 100 A | - | - | - | - | - | 315 g | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | - | - | 7 mA | - | No | - | - | - | - | - | - | - | - | 56*23*27/100 | - | - | - | - | 1.4 V | - | e0 | - | EAR99 | - | - | Three-phase diode bridge series SQL | Tin/Lead (Sn/Pb) | - | - | DUAL | GULL WING | - | 100 | unknown | - | - | - | R-PDSO-G3 | Not Qualified | - | - | - | - | - | - | SINGLE | - | - | - | DEPLETION MODE | - | - | SWITCHING | P-CHANNEL | - | -40 ~ +150 °C | - | - | - | TO-236AB | - | - | - | - | JUNCTION | 0.35 W | 2500 V | - | - | - | 1000 V | 5.5 pF | - | - | - | - | - | - | - | - | 55 | - | 60 | ||
| MMBFJ176 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBF4416Anlielectronics Тип | Texas Instruments |
Description: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 44.90 | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 100000 min | - | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | - | - | - | - | No | - | - | - | - | ON-(ON) 3P | - | - | - | 54.5*20.5*35.7/500 | - | - | - | - | - | - | e0 | - | EAR99 | - | - | - | Tin/Lead (Sn/Pb) | - | - | DUAL | GULL WING | - | 59.1 (body + plunger) mm | unknown | - | - | - | R-PDSO-G3 | Not Qualified | - | - | - | - | - | 30 mΩ max | SINGLE | - | 100 (at Uins.dc=500 V) MΩ min | - | DEPLETION MODE | - | Microswitch series LXW5 with roller plunger | AMPLIFIER | N-CHANNEL | - | -25...+80 °C | - | 15 A | - | TO-236AB | - | - | - | - | JUNCTION | 0.225 W | - | - | AC: 250 V | - | - | 0.9 pF | ULTRA HIGH FREQUENCY BAND | - | - | - | - | - | - | - | 49.6 mm | - | 17.6 mm | ||
| MMBF4416 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBF5461Anlielectronics Тип | National Semiconductor Corporation |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | plastic | - | - | 3 | SILICON | 1 | - | - | pusher travel PTmax = 2 mm | - | - | - | - | - | 1500 (50 Hz, 1 min.) between contacts V | - | - | - | 69.00 | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | AC: 250 V | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | IP64 | - | - | - | - | - | - | No | - | - | - | ON - (ON), SPDT (1 Form C) | - | - | 46*24.5*37.5/200 | - | - | - | - | - | - | - | - | e0 | - | EAR99 | - | - | Railway switch from AZ series with short pusher | Tin/Lead (Sn/Pb) | - | - | DUAL | GULL WING | - | 49.1 (housing + pusher) mm | unknown | - | - | - | R-PDSO-G3 | Not Qualified | - | - | - | - | ≤15 (at 6…8 V DC) mOhm | - | SINGLE | ≥100 (at U=dc 500 V) Mohm | - | - | DEPLETION MODE | - | - | - | P-CHANNEL | -20...+60 °C | - | 10 A | - | - | TO-236AB | - | - | - | - | JUNCTION | 0.35 W | - | - | - | - | - | 2 pF | - | - | - | - | - | - | - | - | housing - 54 mm | - | 21.0 mm | ||
| MMBF5461 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBF5484Anlielectronics Тип | National Semiconductor Corporation |
Description: RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | plastic | - | - | 3 | SILICON | 1 | - | - | lever travel - 5.0mm | - | - | - | - | - | 1500 (50Hz, 1min) between contacts V | - | - | - | - | 63.10 | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | AC: 250 V | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | - | - | - | - | No | - | - | - | ON - (ON), SPDT (1 Form C) | - | - | - | - | 46*24.5*37.5/200 | - | - | - | - | - | - | e0 | - | EAR99 | - | - | RUICHI AZ series lever track switch with rotating roller (short type) | Tin/Lead (Sn/Pb) | - | - | DUAL | GULL WING | - | in assembly - 77 mm | unknown | - | - | - | R-PDSO-G3 | Not Qualified | - | - | - | - | ≤15 (at 6…8V DC) mΩ | - | SINGLE | ≥100 (at Uinsp.dc=500V) MΩ | - | - | DEPLETION MODE | - | - | AMPLIFIER | N-CHANNEL | -20...+60 °C | - | 10 A | - | - | TO-236AB | - | - | - | - | JUNCTION | 0.225 W | - | - | - | - | - | 1 pF | VERY HIGH FREQUENCY BAND | - | - | - | 16 dB | - | IP64 | - | housing - 54 mm | - | 21.4 mm | ||
| MMBF5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBF4416Anlielectronics Тип | Motorola Semiconductor Products |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1500 V | - | - | - | 8.75 | - | MOTOROLA INC | Ø11.8 + Ø5 mm | - | 20 A | - | - | - | - | - | - | - | - | - | - | - | 12 Vmin | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | No | at least 10000 switching cycles | - | - | ON-(OFF), SPST, non-locking | - | - | - | 37.5*24*34/1000 | - | - | - | - | - | - | - | e0 | - | EAR99 | - | - | Pushbutton switch series ASW with pusher | Tin/Lead (Sn/Pb) | - | - | - | - | - | (total) 68.7 mm | unknown | - | - | - | - | - | - | - | - | - | ≤50 mΩ | - | - | ≥100 (at Uisolation.dc=500 V) MΩ | - | - | - | - | - | - | N-CHANNEL | -25...+85 | - | - | - | - | - | - | - | - | - | JUNCTION | 0.225 W | - | - | - | - | - | - | - | - | - | - | - | - | - | pusher - 14 mm | 34.3 mm | - | 16 mm | ||
| MMBF4416 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBF5461Anlielectronics Тип | Texas Instruments |
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | 1000 (50 Hz / 1 min.) | - | - | - | 1.15 | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | Ф12 mm | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | square 10.3x10.3 mm/ red | - | - | - | - | - | No | - | - | - | B: OFF - (ON) (2P) | - | - | - | 37*31*25/2000 | - | - | - | - | - | - | - | e0 | - | EAR99 | - | - | PBS-18 series pushbutton switch | Tin/Lead (Sn/Pb) | - | - | DUAL | GULL WING | - | 12.4 mm | unknown | - | - | - | R-PDSO-G3 | Not Qualified | - | - | - | - | 20 mΩ max | - | SINGLE | 500 (500 V, 1 min.) min | - | - | DEPLETION MODE | - | - | - | P-CHANNEL | -25…+85 °C | - | 25 mA | - | 50 (AC/DC) V | TO-236AB | - | - | - | - | JUNCTION | 0.35 W | - | - | - | - | - | 2 pF | - | - | - | - | - | - | - | - | 15 mm | - | 12.4 mm | ||
| MMBF5461 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBF5485Anlielectronics Тип | Texas Instruments |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | 3 | SILICON | 1 | 17.5 mm | - | - | - | - | - | - | - | 1000 (50 Hz / 1 min.) V | - | - | - | 3.85 | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | Ф12 mm | - | - | - | - | - | - | 1 (3) Amin | - | - | - | - | - | 10000 min | - | - | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | round / black | IP40 | - | - | - | - | - | - | - | No | - | - | - | OFF- (ON) (2P) | - | - | - | 39*31*30/1000 | - | - | - | - | - | - | - | e0 | - | EAR99 | - | - | PBS-32 Series Pushbutton Switch | Tin/Lead (Sn/Pb) | - | - | DUAL | GULL WING | - | 21.6 mm | unknown | - | - | - | R-PDSO-G3 | Not Qualified | - | - | - | - | 20 mΩ max | - | SINGLE | 100 (500 V, 1 min.) min | - | - | DEPLETION MODE | - | - | AMPLIFIER | N-CHANNEL | -25…+85 °C | - | - | - | - | TO-236AB | - | - | - | - | JUNCTION | 0.35 W | - | - | - | - | - | 1 pF | ULTRA HIGH FREQUENCY BAND | - | - | - | 10 dB | - | - | - | - | - | - | ||
| MMBF5485 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTK0465FAnlielectronics Тип | Kodenshi Corporation |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 500 (50 Hz, 1 min.) V | - | - | - | 13.52 | - | KODENSHI AUK CORP | - | - | - | - | - | - | - | soldering to board | - | - | - | - | - | through contact -1.5 Amin | - | - | - | - | - | - | - | - | - | - | - | , | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 48*32*22.5/1050 | - | - | - | - | - | - | -20…+70 °C | - | - | EAR99 | F - socket | - | - | - | - | 2.77 x 2.84 (horizontal x vertical) mm | - | - | - | 20.0 mm | unknown | - | - | - | - | - | - | 15 in two rows | - | - | ≤20 mΩ | - | - | ≥1000 (at Uinsp.dc=500 V) MΩ | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | screw mounting | - | - | - | - | - | 12.5 (housing) mm | - | 39.14 ± 0.2 mm | ||
| STK0465F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBF5486Anlielectronics Тип | Motorola Semiconductor Products |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.56 V | 222.10 | - | MOTOROLA INC | - | 160 A | - | allowable impulse (IFM) - 480 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Obsolete | - | - | - | - | - | - | - | 1200 V | - | 12 mA | No | - | - | - | - | - | - | - | 31.5*25.2*24/100 | - | - | - | - | - | - | - | e0 | - | EAR99 | - | - | power semiconductor diode module of the series МДД | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | half-bridge | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | JUNCTION | 0.225 W | - | - | - | - | - | - | - | - | - | - | - | maximum allowable junction (Tjm) - 150 °C | - | - | 29 (case) mm | 94 mm | 34 | ||
| MMBF5486 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF1404PBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | NO | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | 75 A | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | LEAD FREE, PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | - | - | - | - | - | - | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | - | - | MATTE TIN OVER NICKEL | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | 3 | - | R-PSFM-T3 | Not Qualified | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | - | - | - | - | - | TO-220AB | 0.004 Ω | 808 A | 40 V | 620 mJ | METAL-OXIDE SEMICONDUCTOR | 333 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRF1404PBF |
Индекс :
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