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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Number of Pins Weight Transistor Element Material Collector-Emitter Breakdown Voltage Number of Elements Test Conditions Turn Off Delay Time Operating Temperature Packaging Published JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Terminal Finish Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number JESD-30 Code Rise Time-Max Element Configuration Power Dissipation Case Connection Input Type Turn On Delay Time Power - Max Transistor Application Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Collector Emitter Voltage (VCEO) Max Collector Current Reverse Recovery Time Continuous Drain Current (ID) JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Input Capacitance Max Breakdown Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Max Junction Temperature (Tj) Continuous Collector Current Turn Off Time-Nom (toff) IGBT Type Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor HGTP5N120BND
Mfr. Тип
HGTP5N120BND
Anlielectronics Тип

ON Semiconductor
IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 6 Weeks ACTIVE, NOT REC (Last Updated: 2 days ago) - Through Hole Through Hole TO-220-3 3 1.8g SILICON 1.2kV 1 960V, 5A, 25 Ω, 15V - -55°C~150°C TJ Tube - e3 yes Not For New Designs 1 (Unlimited) 3 - EAR99 Tin (Sn) LOW CONDUCTION LOSS 8541.29.00.95 1.2kV 167W - - - - 21A - - - - Single 167W COLLECTOR Standard - - MOTOR CONTROL - - N-CHANNEL 1.2kV 21A 65ns - TO-220AB 1200V - - 35 ns 2.7V @ 15V, 5A - 21A 357 ns NPT 53nC 40A 22ns/160ns 450μJ (on), 390μJ (off) - - - 9.4mm 10.67mm 4.83mm No - ROHS3 Compliant Lead Free
    HGTP5N120BND
    HGTP5N120BND

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor HGTP10N120BN
    Mfr. Тип
    HGTP10N120BN
    Anlielectronics Тип

    		ON Semiconductor
    Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-220AB Rail
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 44 Weeks ACTIVE, NOT REC (Last Updated: 2 days ago) - Through Hole Through Hole TO-220-3 3 1.8g SILICON 1.2kV 1 960V, 10A, 10 Ω, 15V - -55°C~150°C TJ Tube - e3 yes Not For New Designs 1 (Unlimited) 3 - EAR99 Tin (Sn) LOW CONDUCTION LOSS 8541.29.00.95 1.2kV 49.2W - - - - 35A - - - - Single 298W COLLECTOR Standard - - MOTOR CONTROL - - N-CHANNEL 1.2kV 35A - - - 1200V - 300V 32 ns 2.7V @ 15V, 10A - 35A 330 ns NPT 100nC 80A 23ns/165ns 320μJ (on), 800μJ (off) - - - 9.4mm 10.67mm 4.83mm No - ROHS3 Compliant Lead Free
      HGTP10N120BN
      HGTP10N120BN

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      ON Semiconductor FGA40N65SMD
      Mfr. Тип
      FGA40N65SMD
      Anlielectronics Тип

      		ON Semiconductor
      IGBT Transistors 650V, 40A Field Stop IGBT
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 6 Weeks ACTIVE (Last Updated: 3 days ago) Tin Through Hole Through Hole TO-3P-3, SC-65-3 3 6.401g SILICON 650V 1 400V, 40A, 6 Ω, 15V 92 ns -55°C~175°C TJ Tube 2008 e3 yes Active 1 (Unlimited) 3 - EAR99 - LOW CONDUCTION LOSS 8541.29.00.95 - 349W - - - - - - - - 28ns Single 349W - Standard 12 ns - POWER CONTROL - - N-CHANNEL 650V 80A 42 ns - - - - - - 2.5V @ 15V, 40A - - - Field Stop 119nC 120A 12ns/92ns 820μJ (on), 260μJ (off) 20V 6V 17ns 20.1mm 16.2mm 5mm No - ROHS3 Compliant Lead Free
        FGA40N65SMD
        FGA40N65SMD

        ON Semiconductor
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Infineon Technologies IRGP4068D-EPBF
        Mfr. Тип
        IRGP4068D-EPBF
        Anlielectronics Тип

        		Infineon Technologies
        IGBT 600V 96A 330W TO247AD
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 16 Weeks - - Through Hole Through Hole TO-247-3 3 - SILICON 600V 1 400V, 48A, 10 Ω, 15V 145 ns -55°C~175°C TJ Bulk 2003 - - Active 1 (Unlimited) 3 - EAR99 - - - 600V 330W - - - - 48A - - - - Single 330W COLLECTOR Standard - - POWER CONTROL - - N-CHANNEL 2.14V 96A - - TO-247AD - - - 180 ns 2.14V @ 15V, 48A - - 210 ns Trench 95nC 144A -/145ns 1.28mJ (off) 20V 6.5V - 20.7mm 15.87mm 5.13mm No No SVHC ROHS3 Compliant Lead Free
          IRGP4068D-EPBF
          IRGP4068D-EPBF

          Infineon Technologies
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Infineon Technologies IRG4PC50SPBF
          Mfr. Тип
          IRG4PC50SPBF
          Anlielectronics Тип

          		Infineon Technologies
          In a Tube of 25, Infineon IRG4PC50SPBF IGBT, 70 A 600 V, 3-Pin TO-247AC
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 14 Weeks - - Through Hole Through Hole TO-247-3 3 - SILICON 600V 1 480V, 41A, 5 Ω, 15V 650 ns -55°C~150°C TJ Bulk 2000 e3 - Last Time Buy 1 (Unlimited) 3 - EAR99 Matte Tin (Sn) - with Nickel (Ni) barrier - - 600V 200W SINGLE - 250 - 70A 30 - - - Dual 200W COLLECTOR Standard 33 ns - - 30ns - N-CHANNEL 1.36V 70A - - TO-247AC - - - 62 ns 1.36V @ 15V, 41A - - 1700 ns - 180nC 140A 33ns/650ns 720μJ (on), 8.27mJ (off) 20V 6V 600ns 20.2946mm 15.875mm 5.3mm No No SVHC ROHS3 Compliant Lead Free
            IRG4PC50SPBF
            IRG4PC50SPBF

            Infineon Technologies
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor HGTD1N120BNS9A
            Mfr. Тип
            HGTD1N120BNS9A
            Anlielectronics Тип

            		ON Semiconductor
            NPTPIGBT TO252 5.3A 1200V
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 7 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 3 260.37mg SILICON 1.2kV 1 960V, 1A, 82 Ω, 15V 67 ns -55°C~150°C TJ Tape & Reel (TR) 2014 - yes Active 1 (Unlimited) 2 - EAR99 - LOW CONDUCTION LOSS, AVALANCHE RATED 8541.29.00.95 1.2kV 60W - GULL WING - - 5.3A - HGTD1N120 R-PSSO-G2 14ns Single 60W COLLECTOR Standard 15 ns - MOTOR CONTROL - - N-CHANNEL 1.2kV 5.3A - - TO-252AA 1200V - 1.2kV 24 ns 2.9V @ 15V, 1A - - 333 ns NPT 14nC 6A 15ns/67ns 70μJ (on), 90μJ (off) 20V - - - - - No No SVHC ROHS3 Compliant Lead Free
              HGTD1N120BNS9A
              HGTD1N120BNS9A

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Infineon Technologies IRG4PH50UPBF
              Mfr. Тип
              IRG4PH50UPBF
              Anlielectronics Тип

              		Infineon Technologies
              IGBT 1200V 45A 200W TO247AC
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 14 Weeks - - Through Hole Through Hole TO-247-3 3 - SILICON 1.2kV 1 960V, 24A, 5 Ω, 15V 200 ns -55°C~150°C TJ Tube 2000 - - Last Time Buy 1 (Unlimited) 3 Through Hole EAR99 - LOW CONDUCTION LOSS - 1.2kV 200W - - - - 45A - - - - Single 200W COLLECTOR Standard 35 ns - POWER CONTROL 15ns - N-CHANNEL 3.7V 45A - - TO-247AC 1200V - - 49 ns 3.7V @ 15V, 24A - - 600 ns - 160nC 180A 35ns/200ns 530μJ (on), 1.41mJ (off) 20V 6V 500ns 20.3mm 15.875mm 5.3mm No No SVHC ROHS3 Compliant Lead Free
                IRG4PH50UPBF
                IRG4PH50UPBF

                Infineon Technologies
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Infineon Technologies IRGP4063DPBF
                Mfr. Тип
                IRGP4063DPBF
                Anlielectronics Тип

                		Infineon Technologies
                IGBT 600V 96A 330W TO247AC
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 26 Weeks - - Through Hole Through Hole TO-247-3 3 38.000013g SILICON 600V 1 400V, 48A, 10 Ω, 15V 145 ns -55°C~175°C TJ Tube 2006 - - Active 1 (Unlimited) 3 - EAR99 - - - 300V 330W - - - - 96A - IRGP4063D - - Single 330W COLLECTOR Standard 60 ns - POWER CONTROL 56ns 300V N-CHANNEL 2.14V 96A 115 ns 96A TO-247AC - - - 100 ns 2.14V @ 15V, 48A - - 210 ns Trench 95nC 144A 60ns/145ns 625μJ (on), 1.28mJ (off) 20V 6.5V 46ns 20.3mm 15.875mm 5.3mm No No SVHC ROHS3 Compliant Lead Free
                  IRGP4063DPBF
                  IRGP4063DPBF

                  Infineon Technologies
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Infineon Technologies IRG4BC40WPBF
                  Mfr. Тип
                  IRG4BC40WPBF
                  Anlielectronics Тип

                  		Infineon Technologies
                  IGBT 600V 40A 160W TO220AB
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 16 Weeks - - Through Hole Through Hole TO-220-3 3 - SILICON 600V 1 480V, 20A, 10 Ω, 15V 100 ns -55°C~150°C TJ Tube 2000 - - Last Time Buy 1 (Unlimited) 3 Through Hole EAR99 - LOW CONDUCTION LOSS - 600V 160W - - - - 40A - - - - Single 160W COLLECTOR Standard 27 ns - POWER CONTROL 22ns - N-CHANNEL 2.5V 40A - - TO-220AB - 1.9nF - 49 ns 2.5V @ 15V, 20A - - 174 ns - 98nC 160A 27ns/100ns 110μJ (on), 230μJ (off) 20V 6V 110ns 8.77mm 10.54mm 4.69mm No No SVHC ROHS3 Compliant Contains Lead, Lead Free
                    IRG4BC40WPBF
                    IRG4BC40WPBF

                    Infineon Technologies
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Infineon Technologies IRGP4066D-EPBF
                    Mfr. Тип
                    IRGP4066D-EPBF
                    Anlielectronics Тип

                    		Infineon Technologies
                    IGBT 600V 140A 454W TO247AD
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 26 Weeks - Tin Through Hole Through Hole TO-247-3 3 6.500007g SILICON 600V 1 400V, 75A, 10 Ω, 15V 200 ns -55°C~175°C TJ Tube 2004 - - Active 1 (Unlimited) 3 - EAR99 - - - - 454W - - - - - - - - 90ns Single - COLLECTOR Standard 50 ns 454W POWER CONTROL - - N-CHANNEL 2.1V 140A 155 ns - TO-247AD - - - 120 ns 2.1V @ 15V, 75A - - 310 ns Trench 150nC 225A 50ns/200ns 2.47mJ (on), 2.16mJ (off) 20V 6.5V 80ns 20.7mm 15.87mm 5.13mm No No SVHC ROHS3 Compliant Lead Free
                      IRGP4066D-EPBF
                      IRGP4066D-EPBF

                      Infineon Technologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      ON Semiconductor NGTB25N120FL2WG
                      Mfr. Тип
                      NGTB25N120FL2WG
                      Anlielectronics Тип

                      		ON Semiconductor
                      Trans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 33 Weeks ACTIVE (Last Updated: 1 day ago) - Through Hole Through Hole TO-247-3 3 - - 1.2kV - 600V, 25A, 10 Ω, 15V - -55°C~175°C TJ Tube 2014 e3 yes Active 1 (Unlimited) - - EAR99 Tin (Sn) - - - 385W - - NOT SPECIFIED - - NOT SPECIFIED - - - Single - - Standard - 385W - - - N-CHANNEL 2.4V 50A 154 ns - - 1200V - - - 2.4V @ 15V, 25A - - - Field Stop 178nC 100A 87ns/179ns 1.95mJ (on), 600μJ (off) 20V 6.5V - - - - - - ROHS3 Compliant Lead Free
                        NGTB25N120FL2WG
                        NGTB25N120FL2WG

                        ON Semiconductor
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        ON Semiconductor FGH40N60SMDF
                        Mfr. Тип
                        FGH40N60SMDF
                        Anlielectronics Тип

                        		ON Semiconductor
                        FAIRCHILD SEMICONDUCTOR FGH40N60SMDF IGBT Single Transistor, General Purpose, 80 A, 600 V, 349 W, 600 V, TO-247AB, 3 Pins
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 4 Weeks - Tin Through Hole Through Hole TO-247-3 3 6.39g SILICON 600V 1 400V, 40A, 6 Ω, 15V 92 ns -55°C~175°C TJ Tube 2013 e3 yes Active 1 (Unlimited) 3 - EAR99 - - 8541.29.00.95 - 349W - - - - - - FGH40N60 - 28ns Single 349W COLLECTOR Standard 12 ns - POWER CONTROL - - N-CHANNEL 600V 80A 90ns - TO-247AB - - - 37 ns 2.5V @ 15V, 40A - - 132 ns Field Stop 119nC 120A 12ns/92ns 1.3mJ (on), 260μJ (off) 20V 6V 17ns 20.6mm 15.6mm 4.7mm No No SVHC ROHS3 Compliant Lead Free
                          FGH40N60SMDF
                          FGH40N60SMDF

                          ON Semiconductor
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Infineon Technologies IRG4BC40FPBF
                          Mfr. Тип
                          IRG4BC40FPBF
                          Anlielectronics Тип

                          		Infineon Technologies
                          IGBT 600V 49A 160W TO220AB
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 16 Weeks - - Through Hole Through Hole TO-220-3 3 6.000006g SILICON 600V 1 480V, 27A, 10 Ω, 15V 240 ns -55°C~150°C TJ Tube 2000 - - Last Time Buy 1 (Unlimited) 3 Through Hole EAR99 - FAST SWITCHING - 600V 160W SINGLE - - - 49A - - - - Dual 160W COLLECTOR Standard 26 ns - POWER CONTROL 18ns - N-CHANNEL 1.7V 49A - - TO-220AB - - - 46 ns 1.7V @ 15V, 27A - - 690 ns - 100nC 196A 26ns/240ns 370μJ (on), 1.81mJ (off) 20V 6V - 8.77mm 10.54mm 4.69mm No No SVHC ROHS3 Compliant Lead Free
                            IRG4BC40FPBF
                            IRG4BC40FPBF

                            Infineon Technologies
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor FGH40T120SMD
                            Mfr. Тип
                            FGH40T120SMD
                            Anlielectronics Тип

                            		ON Semiconductor
                            Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Rail
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 4 Weeks ACTIVE (Last Updated: 4 days ago) - Through Hole Through Hole TO-247-3 3 6.39g - 1.2kV - 600V, 40A, 10 Ω, 15V 475 ns -55°C~175°C TJ Tube 2013 e3 yes Active 1 (Unlimited) - - EAR99 Tin (Sn) - 8541.29.00.95 - 555W - - NOT SPECIFIED not_compliant - NOT SPECIFIED - - - Single 555W - Standard 40 ns - - - - N-CHANNEL 1.2kV 80A 65 ns - - 1200V - - - 2.4V @ 15V, 40A 175°C 80A - Trench Field Stop 370nC 160A 40ns/475ns 2.7mJ (on), 1.1mJ (off) 25V 7.5V - 24.75mm 15.87mm 4.82mm - - ROHS3 Compliant -
                              FGH40T120SMD
                              FGH40T120SMD

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Infineon Technologies IRG4PC40UDPBF
                              Mfr. Тип
                              IRG4PC40UDPBF
                              Anlielectronics Тип

                              		Infineon Technologies
                              IGBT 600V 40A 160W TO247AC
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 14 Weeks - - Through Hole Through Hole TO-247-3 3 - SILICON 600V 1 480V, 20A, 10 Ω, 15V 110 ns -55°C~150°C TJ Bulk 1998 - - Last Time Buy 1 (Unlimited) 3 Through Hole EAR99 - - - 600V 160W - - - - 40A - - - - Single 160W COLLECTOR Standard 54 ns - POWER CONTROL 57ns - N-CHANNEL 600V 40A 42 ns - TO-247AC - - - 92 ns 2.1V @ 15V, 20A 150°C 40A 330 ns - 100nC 160A 54ns/110ns 710μJ (on), 350μJ (off) 20V 6V 120ns 24.6mm 15.875mm 5.3mm No No SVHC ROHS3 Compliant Lead Free
                                IRG4PC40UDPBF
                                IRG4PC40UDPBF

                                Infineon Technologies
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ON Semiconductor HGTG27N120BN
                                Mfr. Тип
                                HGTG27N120BN
                                Anlielectronics Тип

                                		ON Semiconductor
                                FAIRCHILD SEMICONDUCTOR HGTG27N120BN IGBT Single Transistor, 72 A, 2.7 V, 500 W, 1.2 kV, TO-247, 3 Pins
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 44 Weeks ACTIVE, NOT REC (Last Updated: 2 days ago) - Through Hole Through Hole TO-247-3 3 6.39g SILICON 1.2kV 1 960V, 27A, 3 Ω, 15V 240 ns -55°C~150°C TJ Tube - e3 yes Not For New Designs 1 (Unlimited) 3 - EAR99 Tin (Sn) LOW CONDUCTION LOSS, AVALANCHE RATED 8541.29.00.95 1.2kV 500W - - - - 72A - - - - Single 500W COLLECTOR Standard 24 ns - POWER CONTROL - - N-CHANNEL 1.2kV 72A - - - 1200V - - 42 ns 2.7V @ 15V, 27A - 72A 360 ns NPT 270nC 216A 24ns/195ns 2.2mJ (on), 2.3mJ (off) - - - 20.82mm 15.87mm 4.82mm No No SVHC ROHS3 Compliant Lead Free
                                  HGTG27N120BN
                                  HGTG27N120BN

                                  ON Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ON Semiconductor SGL160N60UFDTU
                                  Mfr. Тип
                                  SGL160N60UFDTU
                                  Anlielectronics Тип

                                  		ON Semiconductor
                                  FAIRCHILD SEMICONDUCTOR SGL160N60UFDTU.IGBT Single Transistor, 160 A, 2.6 V, 250 W, 600 V, TO-264, 3 Pins
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - ACTIVE, NOT REC (Last Updated: 10 hours ago) - Through Hole Through Hole TO-264-3, TO-264AA 3 6.756g SILICON 600V 1 300V, 80A, 3.9 Ω, 15V 90 ns -55°C~150°C TJ Tube 2014 e3 yes Not For New Designs 1 (Unlimited) 3 - EAR99 Tin (Sn) LOW CONDUCTION LOSS, HIGH SPEED SWITCHING 8541.29.00.95 600V 250W - - - - 80A - - - - Single 250W - Standard 40 ns - MOTOR CONTROL - - N-CHANNEL 600V 160A 95 ns - - - - - 150 ns 2.6V @ 15V, 80A - - 262 ns - 345nC 300A 40ns/90ns 2.5mJ (on), 1.76mJ (off) - - - 26mm 20mm 5mm No No SVHC ROHS3 Compliant Lead Free
                                    SGL160N60UFDTU
                                    SGL160N60UFDTU

                                    ON Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Infineon Technologies IRGP4266DPBF
                                    Mfr. Тип
                                    IRGP4266DPBF
                                    Anlielectronics Тип

                                    		Infineon Technologies
                                    IGBT 650V 140A 455W TO247AC
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 14 Weeks - Tin Through Hole Through Hole TO-247-3 3 - - 650V - 400V, 75A, 10 Ω, 15V - -40°C~175°C TJ Tube 2007 - - Last Time Buy 1 (Unlimited) - - EAR99 - - - - 455W - - - - - - - - 90ns Single - - Standard - 455W - - - N-CHANNEL 2.1V 140A 170 ns - - - - - - 2.1V @ 15V, 75A - - - - 210nC 300A 50ns/200ns 2.5mJ (on), 2.2mJ (off) 20V 7.7V 80ns - - - No No SVHC ROHS3 Compliant Lead Free
                                      IRGP4266DPBF
                                      IRGP4266DPBF

                                      Infineon Technologies
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Infineon Technologies IRG4PH30KDPBF
                                      Mfr. Тип
                                      IRG4PH30KDPBF
                                      Anlielectronics Тип

                                      		Infineon Technologies
                                      IGBT 1200V 20A 100W TO247AC
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 14 Weeks - - Through Hole Through Hole TO-247-3 3 - SILICON 1.2kV 1 800V, 10A, 23 Ω, 15V 220 ns -55°C~150°C TJ Tube 2000 - - Last Time Buy 1 (Unlimited) 3 Through Hole EAR99 - LOW CONDUCTION LOSS - 1.2kV 100W - - - - 20A - - - - Single 100W COLLECTOR Standard 39 ns - MOTOR CONTROL 79ns - N-CHANNEL 4.2V 20A 50 ns - TO-247AC 1200V - - 121 ns 4.2V @ 15V, 10A - - 637 ns - 53nC 40A 39ns/220ns 950μJ (on), 1.15mJ (off) 20V 6V 140ns 20.7mm 15.87mm 5.3086mm No No SVHC ROHS3 Compliant Lead Free
                                        IRG4PH30KDPBF
                                        IRG4PH30KDPBF

                                        Infineon Technologies
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        ON Semiconductor HGTG30N60B3D
                                        Mfr. Тип
                                        HGTG30N60B3D
                                        Anlielectronics Тип

                                        		ON Semiconductor
                                        IGBT 600V 60A 208W TO247
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 - ACTIVE, NOT REC (Last Updated: 2 days ago) - Through Hole Through Hole TO-247-3 3 6.39g SILICON 600V 1 480V, 30A, 3 Ω, 15V 137 ns -55°C~150°C TJ Tube 2011 e3 yes Not For New Designs 1 (Unlimited) 3 - EAR99 Tin (Sn) LOW CONDUCTION LOSS 8541.29.00.95 600V 208W - - - - 60A - HGTG30N60 - - Single 208W - Standard 36 ns - POWER CONTROL 25ns - N-CHANNEL 600V 60A 55 ns - - - - - 56 ns 1.9V @ 15V, 30A - - 365 ns - 170nC 220A 36ns/137ns 550μJ (on), 680μJ (off) - - - - - - No No SVHC ROHS3 Compliant Lead Free
                                          HGTG30N60B3D
                                          HGTG30N60B3D

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