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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Base Product Number Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Continuous Collector Current Ic Max Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Gate-Emitter Leakage Current Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Styles Number of Elements Package Pd - Power Dissipation Product Status RoHS Test Conditions Tradename Turn Off Delay Time Unit Weight Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Terminal Finish Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Qualification Status Configuration Element Configuration Power Dissipation Case Connection Input Type Turn On Delay Time Power - Max Transistor Application Halogen Free Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Collector Emitter Voltage (VCEO) Max Collector Current Operating Temperature Range Reverse Recovery Time Continuous Drain Current (ID) JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Max Breakdown Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Continuous Collector Current Turn Off Time-Nom (toff) IGBT Type Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
Infineon Technologies IGB20N60H3ATMA1
Mfr. Тип
IGB20N60H3ATMA1
Anlielectronics Тип

Infineon Technologies
IGBT Transistors 600v Hi-Speed SW IGBT
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 16 Weeks - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - - - - SILICON - - - - - - - - - - - - - - 1 - - - - 400V, 20A, 14.6 Ω, 15V - - - -40°C~175°C TJ Tape & Reel (TR) 2008 TrenchStop® e3 no Active 1 (Unlimited) 2 EAR99 Tin (Sn) - - - - - GULL WING NOT SPECIFIED not_compliant - NOT SPECIFIED 30N60 4 - R-PSSO-G2 Not Qualified - Single - COLLECTOR Standard - 170W POWER CONTROL Halogen Free - - N-CHANNEL 600V 40A - - - - - - 31 ns 2.4V @ 15V, 20A - 241 ns Trench Field Stop 120nC 80A 16ns/194ns 690μJ - - - - - - - - ROHS3 Compliant Contains Lead
    IGB20N60H3ATMA1
    IGB20N60H3ATMA1

    Infineon Technologies
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor SGF5N150UFTU
    Mfr. Тип
    SGF5N150UFTU
    Anlielectronics Тип

    		ON Semiconductor
    Trans IGBT Chip N-CH 1.5KV 10A 3-Pin(3 Tab) TO-3PF Rail
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 44 Weeks ACTIVE (Last Updated: 1 week ago) Through Hole Through Hole TO-3P-3 Full Pack - 3 - 6.962g SILICON - - 1.5kV 4.7V - - - - - - - - - - 1 - - - - 600V, 5A, 10 Ω, 10V - 30 ns - -55°C~150°C TJ Tube 2003 - e3 yes Obsolete 1 (Unlimited) 3 EAR99 Tin (Sn) LOW CONDUCTION LOSS, HIGH SPEED SWITCHING 8541.29.00.95 1.5kV 62.5W - - - - 5A - - - - - - - Single 62.5W ISOLATED Standard 10 ns - POWER CONTROL - - - N-CHANNEL 1.5kV 10A - - - - 1500V - 25 ns 5.5V @ 10V, 5A - 100 ns - 30nC 20A 10ns/30ns 190μJ (on), 100μJ (off) 20V 4V 120ns - - - No No SVHC RoHS Compliant Lead Free
      SGF5N150UFTU
      SGF5N150UFTU

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Infineon Technologies IRGP4740DPBF
      Mfr. Тип
      IRGP4740DPBF
      Anlielectronics Тип

      		Infineon Technologies
      IGBT 650V TO-247
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 - - Through Hole Through Hole TO-247-3 - 3 - - - - - 650V 1.7V - - - - - - - - - - - - - - - 400V, 24A, 10 Ω, 15V - - - -40°C~175°C TJ Tube 2014 - - - Obsolete 1 (Unlimited) - EAR99 - - - - 250W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - - - Standard - 250W - - - - - 2V 60A - 170 ns - - - - - 2V @ 15V, 24A - - - 70nC 72A 24ns/73ns 520μJ (on), 240μJ (off) - - - - - - - No SVHC RoHS Compliant -
        IRGP4740DPBF
        IRGP4740DPBF

        Infineon Technologies
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Microchip Technology APT30GT60BRG
        Mfr. Тип
        APT30GT60BRG
        Anlielectronics Тип

        		Microchip Technology
        IGBT Transistors FG, IGBT, 600V, 30A, TO-247, RoHSView in Development Tools Selector
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - - - Through Hole TO-247-3 - - TO-247 [B] - - APT30GT60 600 V - 2 V 64 A 64 A 64 A 1 100 nA - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole - Tube 250 W Active Details 400V, 30A, 10Ohm, 15V Thunderbolt IGBT - 1.340411 oz -55°C ~ 150°C (TJ) Tube - Thunderbolt IGBT® - - - - - - - - - - - - - - - - - - - - - - Single - - - Standard - 250 W - - - - - - - - 55 C to + 150 C - - - 600 V - - 2.5V @ 15V, 30A 64 A - NPT 145 nC 110 A 12ns/225ns 525µJ (on), 600µJ (off) - - - 5.31 mm 21.46 mm 16.26 mm - - - -
          APT30GT60BRG
          APT30GT60BRG

          Microchip Technology
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          STMicroelectronics STGF19NC60HD
          Mfr. Тип
          STGF19NC60HD
          Anlielectronics Тип

          		STMicroelectronics
          STMICROELECTRONICS STGF19NC60HD IGBT Single Transistor, 16 A, 2.5 V, 35 W, 600 V, TO-220FP, 3 Pins
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 8 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Through Hole TO-220-3 Full Pack - 3 - - SILICON - - 600V 1.8V - - - - - - - - - - 1 - - - - 390V, 12A, 10 Ω, 15V - 97 ns - -55°C~150°C TJ Tube - PowerMESH™ e3 - Active 1 (Unlimited) 3 EAR99 Matte Tin (Sn) - - 600V 32W - - - - 9A - STGF19 3 - - - - Single 35W ISOLATED Standard 25 ns - POWER CONTROL - 7ns 600V N-CHANNEL 600V 16A - 31 ns 16A TO-220AB - - 32 ns 2.5V @ 15V, 12A - 272 ns - 53nC 60A 25ns/97ns 85μJ (on), 189μJ (off) 20V 5.75V - 16.4mm 10.4mm 4.6mm No No SVHC ROHS3 Compliant Lead Free
            STGF19NC60HD
            STGF19NC60HD

            STMicroelectronics
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Atmel (Microchip Technology) APT75GP120B2G
            Mfr. Тип
            APT75GP120B2G
            Anlielectronics Тип

            		Atmel (Microchip Technology)
            IGBT Transistors FG, IGBT, 1200V, TO-247 T-MAX, RoHSView in Development Tools Selector
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - - - - T-Max-3 - - - - - - 1.2 kV - 3.3 V 100 A 100 A - 1 100 nA - 30 V, + 30 V + 150 C - - 55 C Through Hole - - 1.042 kW - Details - POWER MOS 7 IGBT - 0.580821 oz - Tube - - - - - - - - - - - - - - - - - - - - - - - - Single - - - - - - - - - - - - - - 55 C to + 150 C - - - - - - - 100 A - - - - - - - - - 5.31 mm 21.46 mm 16.26 mm - - - -
              APT75GP120B2G
              APT75GP120B2G

              Atmel (Microchip Technology)
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              ON Semiconductor FGA5065ADF
              Mfr. Тип
              FGA5065ADF
              Anlielectronics Тип

              		ON Semiconductor
              IGBT 650V 100A TO-3PN
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 6 Weeks ACTIVE (Last Updated: 4 days ago) Through Hole Through Hole TO-3P-3, SC-65-3 - - - 6.401g - - - 650V - - - - - - - - - - - - - - - - 400V, 50A, 6 Ω, 15V - - - -55°C~175°C TJ Tube 2016 - e3 yes Active 1 (Unlimited) - EAR99 Tin (Sn) - 8541.29.00.95 - 268W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - - - Standard - 268W - - - - - 2.2V 100A - 31.8 ns - - - - - 2.2V @ 15V, 50A - - Trench Field Stop 72.2nC 150A 20.8ns/62.4ns 1.35mJ (on), 309μJ (off) - - - - - - - - ROHS3 Compliant -
                FGA5065ADF
                FGA5065ADF

                ON Semiconductor
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                STMicroelectronics STGB7NC60HDT4
                Mfr. Тип
                STGB7NC60HDT4
                Anlielectronics Тип

                		STMicroelectronics
                IGBT 600V 25A 80W D2PAK
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 8 Weeks ACTIVE (Last Updated: 7 months ago) Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - 3 - - SILICON - - 600V 2.5V - - - - - - - - - - 1 - - - - 390V, 7A, 10 Ω, 15V - 72 ns - -55°C~150°C TJ Tape & Reel (TR) - PowerMESH™ e3 - Active 1 (Unlimited) 2 EAR99 Matte Tin (Sn) - annealed - - 600V 80W - GULL WING 245 - 14A 30 STGB7 4 - R-PSSO-G2 - - Single 25W - Standard 18.5 ns 80W POWER CONTROL - 8.5ns - N-CHANNEL 600V 25A - 37 ns - - - 600V 25.5 ns 2.5V @ 15V, 7A - 221 ns - 35nC 50A 18.5ns/72ns 95μJ (on), 115μJ (off) 20V 5.75V - - - - No - ROHS3 Compliant Lead Free
                  STGB7NC60HDT4
                  STGB7NC60HDT4

                  STMicroelectronics
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  STMicroelectronics STGD10NC60HT4
                  Mfr. Тип
                  STGD10NC60HT4
                  Anlielectronics Тип

                  		STMicroelectronics
                  Trans IGBT Chip N-CH 600V 20A 3-Pin(2 Tab) DPAK T/R
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 8 Weeks ACTIVE (Last Updated: 7 months ago) Surface Mount Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - 3 - - SILICON - - 600V - - - - - - - - - - - 1 - - - - 390V, 5A, 10 Ω, 15V - - - -55°C~150°C TJ Tape & Reel (TR) - PowerMESH™ e3 - Active 1 (Unlimited) 2 EAR99 Matte Tin (Sn) - annealed - - - 60W - GULL WING 260 - - - STGD10 3 - R-PSSO-G2 - - Single - - Standard - 60W POWER CONTROL - - - N-CHANNEL 600V 20A - - - - - 600V 19 ns 2.5V @ 15V, 5A - 247 ns - 19.2nC - 14.2ns/72ns 31.8μJ (on), 95μJ (off) 20V 5.75V - - - - No - ROHS3 Compliant Lead Free
                    STGD10NC60HT4
                    STGD10NC60HT4

                    STMicroelectronics
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    STMicroelectronics STGWA80H65DFB
                    Mfr. Тип
                    STGWA80H65DFB
                    Anlielectronics Тип

                    		STMicroelectronics
                    Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - ACTIVE (Last Updated: 7 months ago) Through Hole Through Hole TO-247-3 - 3 - - - - - 650V - - - - - - - - - - - - - - - - 400V, 80A, 10 Ω, 15V - - - -55°C~175°C TJ Tube - - - - Obsolete 1 (Unlimited) - EAR99 - - - - 469W - - NOT SPECIFIED - - NOT SPECIFIED STGWA80 - - - - - Single - - Standard - 469W - - - - - 2V 120A - 85 ns - - - - - 2V @ 15V, 80A - - Trench Field Stop 414nC 240A 84ns/280ns 2.1mJ (on), 1.5mJ (off) - - - - - - - - ROHS3 Compliant -
                      STGWA80H65DFB
                      STGWA80H65DFB

                      STMicroelectronics
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Microchip Technology APT25GR120B
                      Mfr. Тип
                      APT25GR120B
                      Anlielectronics Тип

                      		Microchip Technology
                      IGBT Transistors FG, IGBT, 1200V, 25A, TO247View in Development Tools Selector
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - - - Through Hole TO-247-3 - - TO-247 - - APT25GR120 1.2 kV - 3.5 V 75 A - 75 A 1 - - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole - Bulk 521 W Active Details 600V, 25A, 4.3Ohm, 15V - - 0.218699 oz -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - - - - - - - - - - - - Single - - - Standard - 521 W - - - - - - - - - - - 1200 V - - 3.2V @ 15V, 25A - - NPT 203 nC 100 A 16ns/122ns 742µJ (on), 427µJ (off) - - - - - - - - - -
                        APT25GR120B
                        APT25GR120B

                        Microchip Technology
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        STMicroelectronics STGF30H60DF
                        Mfr. Тип
                        STGF30H60DF
                        Anlielectronics Тип

                        		STMicroelectronics
                        IGBT 600V 60A 37W TO220FP
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - - Through Hole Through Hole TO-220-3 Full Pack - 3 - - - - - 600V 2.4V - - - - - - - - - - - - - - - 400V, 30A, 10 Ω, 15V - - - -40°C~175°C TJ Tube - - - - Obsolete 1 (Unlimited) - EAR99 - - - - 37W - - - - - - STGF30 - - - - - Single 37W - Standard - - - - - - N-CHANNEL 600V 60A - 110 ns - - - - - 2.4V @ 15V, 30A - - Trench Field Stop 105nC 120A 50ns/160ns 350μJ (on), 400μJ (off) 20V - - - - - No - ROHS3 Compliant Lead Free
                          STGF30H60DF
                          STGF30H60DF

                          STMicroelectronics
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Infineon Technologies IKW30N60TAFKSA1
                          Mfr. Тип
                          IKW30N60TAFKSA1
                          Anlielectronics Тип

                          		Infineon Technologies
                          IGBT 600V 60A 187W TO247-3-21
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 14 Weeks - Through Hole Through Hole TO-247-3 - 3 - - SILICON - - 600V - - - - - - - - - - - 1 - - - - 400V, 30A, 10.6 Ω, 15V - - - -40°C~175°C TJ Tube 2014 TrenchStop® - yes Last Time Buy 1 (Unlimited) 3 EAR99 - - - - 187W - - NOT SPECIFIED - - NOT SPECIFIED *KW30N60 - AEC-Q101 - - - Single - COLLECTOR Standard - 187W POWER CONTROL - - - N-CHANNEL 600V 60A - 143 ns - - - - 50 ns 2.05V @ 15V, 30A - 382 ns Trench Field Stop 167nC 90A 23ns/254ns 1.46mJ - - - - - - - - ROHS3 Compliant Lead Free
                            IKW30N60TAFKSA1
                            IKW30N60TAFKSA1

                            Infineon Technologies
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor SGH10N60RUFDTU
                            Mfr. Тип
                            SGH10N60RUFDTU
                            Anlielectronics Тип

                            		ON Semiconductor
                            IGBT 600V 16A 75W TO3P
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - ACTIVE, NOT REC (Last Updated: 2 weeks ago) Through Hole Through Hole TO-3P-3, SC-65-3 - 3 - 6.401g SILICON - - 600V 2.2V - - - - - - - - - - 1 - - - - 300V, 10A, 20 Ω, 15V - - - -55°C~150°C TJ Tube - - e3 yes Not For New Designs 1 (Unlimited) 3 EAR99 Tin (Sn) LOW CONDUCTION LOSS, HIGH SPEED SWITCHING 8541.29.00.95 600V 75W - - - - 10A - SG*10N60 - - - - - Single 75W - Standard - - MOTOR CONTROL - - - N-CHANNEL 600V 16A - 60ns - - - - 49 ns 2.8V @ 15V, 10A - 284 ns - 30nC 30A 15ns/36ns 141μJ (on), 215μJ (off) - - - - - - No - ROHS3 Compliant Lead Free
                              SGH10N60RUFDTU
                              SGH10N60RUFDTU

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              ON Semiconductor NGTB40N65IHL2WG
                              Mfr. Тип
                              NGTB40N65IHL2WG
                              Anlielectronics Тип

                              		ON Semiconductor
                              Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 12 Weeks ACTIVE (Last Updated: 1 day ago) Through Hole Through Hole TO-247-3 - - - - - - - 650V - - - - - - - - - - - - - - - - 400V, 40A, 10 Ω, 15V - - - -55°C~175°C TJ Tube 2014 - e3 yes Active 1 (Unlimited) - EAR99 Tin (Sn) - - - 300W - - - - - - - - - - - - Single - - Standard - 300W - - - - N-CHANNEL 2.2V 80A - 465 ns - - - - - 2.2V @ 15V, 40A - - Trench Field Stop 135nC 160A -/140ns 360μJ (off) 20V 6.5V - - - - - - ROHS3 Compliant Lead Free
                                NGTB40N65IHL2WG
                                NGTB40N65IHL2WG

                                ON Semiconductor
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                STMicroelectronics STGW10M65DF2
                                Mfr. Тип
                                STGW10M65DF2
                                Anlielectronics Тип

                                		STMicroelectronics
                                TRENCH GATE FIELD-STOP IGBT M SE
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 30 Weeks ACTIVE (Last Updated: 8 months ago) - Through Hole TO-247-3 - - - - - - - - - - - 20A - - - - - - - - - - - - 400V, 10A, 22 Ω, 15V - - - -55°C~175°C TJ Tube - M - - Active 1 (Unlimited) - - - - - - - - - - - - - STGW10 - - - - - - - - Standard - 115W - - - - - - - - 96ns - - 650V - - 2V @ 15V, 10A - - Trench Field Stop 28nC 40A 19ns/91ns 120μJ (on), 270μJ (off) - - - - - - - - ROHS3 Compliant -
                                  STGW10M65DF2
                                  STGW10M65DF2

                                  STMicroelectronics
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Infineon Technologies IGW50N60TPXKSA1
                                  Mfr. Тип
                                  IGW50N60TPXKSA1
                                  Anlielectronics Тип

                                  		Infineon Technologies
                                  IGBT 600V 80A 319.2W TO247
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 16 Weeks - - Through Hole TO-247-3 NO - - - SILICON - - - - - - 80A - - - - - - - 1 - - - - 400V, 50A, 7 Ω, 15V - - - -40°C~175°C TJ Tube 2012 TrenchStop™ - yes Active Not Applicable 3 EAR99 - FAST SWITCHING - - - SINGLE - NOT SPECIFIED - - NOT SPECIFIED - - - R-PSFM-T3 - SINGLE - - COLLECTOR Standard - 319.2W POWER CONTROL - - - N-CHANNEL - - - - - TO-247AC 600V - 60 ns 1.8V @ 15V, 50A - 396 ns Trench Field Stop 249nC 150A 20ns/215ns 1.53mJ (on), 850μJ (off) - - - - - - - - ROHS3 Compliant -
                                    IGW50N60TPXKSA1
                                    IGW50N60TPXKSA1

                                    Infineon Technologies
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Infineon Technologies IKQ100N60TXKSA1
                                    Mfr. Тип
                                    IKQ100N60TXKSA1
                                    Anlielectronics Тип

                                    		Infineon Technologies
                                    Trans IGBT Chip N-CH 600V 160A 3-Pin TO-247 Tube
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 16 Weeks - Through Hole Through Hole TO-247-3 - 3 - - SILICON - - 600V - - - - - - - - - - - 1 - - - - 400V, 100A, 3.6 Ω, 15V - - - -40°C~175°C TJ Tube 2009 TrenchStop™ e3 yes Active 1 (Unlimited) 3 EAR99 Tin (Sn) - - - 714W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - Single - - Standard - 714W POWER CONTROL Halogen Free - - N-CHANNEL 600V 160A - 230 ns - - - - 83 ns 2V @ 15V, 100A - 393 ns Trench Field Stop 610nC 400A 30ns/290ns 3.1mJ (on), 2.5mJ (off) - - - - - - - - ROHS3 Compliant Lead Free
                                      IKQ100N60TXKSA1
                                      IKQ100N60TXKSA1

                                      Infineon Technologies
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      STMicroelectronics STGD10NC60KDT4
                                      Mfr. Тип
                                      STGD10NC60KDT4
                                      Anlielectronics Тип

                                      		STMicroelectronics
                                      IGBT 600V 20A 62W DPAK
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 8 Weeks ACTIVE (Last Updated: 7 months ago) Surface Mount Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - 3 - - SILICON - - 600V 2V - - - - - - - - - - 1 - - - - 390V, 5A, 10 Ω, 15V - 72 ns - -55°C~150°C TJ Tape & Reel (TR) - PowerMESH™ - - Active 1 (Unlimited) 2 EAR99 - - - - 62W - GULL WING - - - - STGD10 3 - R-PSSO-G2 - - Single - COLLECTOR Standard 17 ns 62W POWER CONTROL - 6.5ns - N-CHANNEL 600V 20A - 22 ns - - - 600V 23 ns 2.5V @ 15V, 5A - 242 ns - 19nC 30A 17ns/72ns 55μJ (on), 85μJ (off) 20V 7V - 2.4mm 6.6mm 6.2mm No No SVHC ROHS3 Compliant Lead Free
                                        STGD10NC60KDT4
                                        STGD10NC60KDT4

                                        STMicroelectronics
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        STMicroelectronics STGB10NB40LZT4
                                        Mfr. Тип
                                        STGB10NB40LZT4
                                        Anlielectronics Тип

                                        		STMicroelectronics
                                        Trans IGBT Chip N-CH 380V 20A Automotive 3-Pin(2 Tab) D2PAK T/R
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                                          		 8 Weeks ACTIVE (Last Updated: 8 months ago) Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - 3 - 2.240009g SILICON - - 440V 1.2V - - - - - - - - - - 1 - - - - 328V, 10A, 1k Ω, 5V - - - -55°C~175°C TJ Tape & Reel (TR) - Automotive, AEC-Q101, PowerMESH™ e3 - Active 1 (Unlimited) 2 EAR99 Matte Tin (Sn) - annealed - - 18V 150W - GULL WING 245 - 20A 30 STGB10 3 - R-PSSO-G2 - - Single 150W COLLECTOR Standard - - AUTOMOTIVE IGNITION - 270ns - N-CHANNEL 1.8V 20A - - - - - 440V 1570 ns 1.8V @ 4.5V, 10A 20A 12000 ns - 28nC 40A 1.3μs/8μs 2.4mJ (on), 5mJ (off) - 2.2V - 4.6mm 10.4mm 9.35mm No - ROHS3 Compliant Lead Free
                                          STGB10NB40LZT4
                                          STGB10NB40LZT4

                                          STMicroelectronics
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                                          Discrete Semiconductor Products

                                          Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: IGB20N60H3ATMA1,SGF5N150UFTU,IRGP4740DPBF,APT30GT60BRG,STGF19NC60HD.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - IGBTs - Single has 7211 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.