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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Number of Terminals Transistor Element Material Base Product Number Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Ihs Manufacturer Manufacturer Part Number Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Styles Number of Elements Operating Temperature-Max Package Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Part Package Code Pd - Power Dissipation Product Status Reflow Temperature-Max (s) Risk Rank RoHS Rohs Code Test Conditions Turn Off Delay Time Turn-off Time-Nom (toff) Turn-on Time-Nom (ton) Unit Weight Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Terminal Finish Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Rise Time-Max Configuration Element Configuration Power Dissipation Case Connection Input Type Turn On Delay Time Power - Max Transistor Application Halogen Free Rise Time Polarity/Channel Type Collector Emitter Voltage (VCEO) Max Collector Current Reverse Recovery Time JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Max Breakdown Voltage Power Dissipation-Max (Abs) Turn On Time Vce(on) (Max) @ Vge, Ic Collector Current-Max (IC) Continuous Collector Current Turn Off Time-Nom (toff) IGBT Type Collector-Emitter Voltage-Max Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Reverse Recovery Time (trr) Fall Time-Max (tf) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
Alpha & Omega Semiconductor Inc. AOD5B65M1
Mfr. Тип
AOD5B65M1
Anlielectronics Тип

Alpha & Omega Semiconductor Inc.
IGBT 650V 5A TO252
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 18 Weeks - Surface Mount Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - - - - - - - - 650V - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 5A, 60 Ω, 15V - - - - -55°C~150°C TJ Tape & Reel (TR) 2011 Alpha IGBT™ - - Active 1 (Unlimited) - - - - - - - 69W - - - unknown - - - - - - - - - - - Standard - 69W - - - - 1.98V 10A 195 ns - - 650V - - 1.98V @ 15V, 5A - - - - - 14nC 15A 8.5ns/106ns 80μJ (on), 70μJ (off) - - - - - - - - - ROHS3 Compliant -
    AOD5B65M1
    AOD5B65M1

    Alpha & Omega Semiconductor Inc.
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor NGTB25N120LWG
    Mfr. Тип
    NGTB25N120LWG
    Anlielectronics Тип

    		ON Semiconductor
    ON SEMICONDUCTOR - NGTB25N120LWG - IGBT, 1200V, 25A, FS1, TO-247-3
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - LAST SHIPMENTS (Last Updated: 1 week ago) - Through Hole TO-247-3 NO 3 - 6.500007g - SILICON - - 1.2kV 2.3V - - - - - - - - - - 1 - - - - - - - - - - - - - - 600V, 25A, 10 Ω, 15V 235 ns - - - -55°C~150°C TJ Tube 2012 - e3 yes Obsolete 1 (Unlimited) 3 - EAR99 Tin (Sn) - - - 192W - - - - - - - 3 - - - - Single - COLLECTOR Standard 89 ns 192W MOTOR CONTROL - - N-CHANNEL 1.2kV 50A - - 1200V - - 117 ns 2.3V @ 15V, 25A - - 475 ns Trench Field Stop - 200nC 200A 89ns/235ns 3.4mJ (on), 800μJ (off) 20V 6.5V - - 21.08mm 16.26mm 5.3mm No No SVHC RoHS Compliant Lead Free
      NGTB25N120LWG
      NGTB25N120LWG

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      STMicroelectronics STGP35HF60W
      Mfr. Тип
      STGP35HF60W
      Anlielectronics Тип

      		STMicroelectronics
      IGBT Transistors 35A Ultrafast IGBT 600V 100kHz
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 8 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Through Hole TO-220-3 - - - - - - - - 600V 1.65V - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 20A, 10 Ω, 15V - - - - -55°C~150°C TJ Tube - - - - Active 1 (Unlimited) - - EAR99 - - - - 200W - - - - - - STGP35 - - - - - Single 200W - Standard - - - - - N-CHANNEL 600V 60A - - - - - - 2.5V @ 15V, 20A - - - - - 140nC 150A 30ns/175ns 290μJ (on), 185μJ (off) 20V 5.75V - - - - - No - ROHS3 Compliant Lead Free
        STGP35HF60W
        STGP35HF60W

        STMicroelectronics
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        IXYS IXGP20N120A3
        Mfr. Тип
        IXGP20N120A3
        Anlielectronics Тип

        		IXYS
        IGBT 1200V 40A 180W TO220
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 26 Weeks - Through Hole Through Hole TO-220-3 - 3 - 2.299997g - SILICON - - 1.2kV 2.3V - - - - - - - - - - 1 - - - - - - - - - - - - - - 960V, 20A, 10 Ω, 15V 290 ns - - - -55°C~150°C TJ Tube 2009 GenX3™ - yes Active 1 (Unlimited) 3 - EAR99 - LOW CONDUCTION LOSS - - 180W - - NOT SPECIFIED - - NOT SPECIFIED IXG*20N120 3 - Not Qualified - - Single 180W COLLECTOR Standard 16 ns - POWER CONTROL - - N-CHANNEL 1.2kV 40A - TO-220AB 1200V - - 66 ns 2.5V @ 15V, 20A - - 1530 ns PT - 50nC 120A 16ns/290ns 2.85mJ (on), 6.47mJ (off) 20V 5V - - - - - - No SVHC ROHS3 Compliant Lead Free
          IXGP20N120A3
          IXGP20N120A3

          IXYS
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          IXYS IXXH75N60C3D1
          Mfr. Тип
          IXXH75N60C3D1
          Anlielectronics Тип

          		IXYS
          IGBT 600V 150A 750W TO247
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 28 Weeks - Through Hole Through Hole TO-247-3 - - - - - SILICON - - 600V - - - - - - - - - - - 1 - - - - - - - - - - - - - - 400V, 60A, 5 Ω, 15V - - - - -55°C~175°C TJ Tube 2013 GenX3™, XPT™ - - Active 1 (Unlimited) 3 - - - - - - 750W SINGLE - - - - - - 3 R-PSFM-T3 Not Qualified - SINGLE WITH BUILT-IN DIODE - - COLLECTOR Standard - 750W POWER CONTROL - - N-CHANNEL 2.3V 150A 25 ns TO-247AD - - - 105 ns 2.3V @ 15V, 60A - - 185 ns PT - 107nC 300A 35ns/90ns 1.6mJ (on), 800μJ (off) 20V 5.5V - - - - - - - ROHS3 Compliant -
            IXXH75N60C3D1
            IXXH75N60C3D1

            IXYS
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor FGH75T65UPD-F085
            Mfr. Тип
            FGH75T65UPD-F085
            Anlielectronics Тип

            		ON Semiconductor
            IGBT 650V 150A 375W TO-247AB
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - - Through Hole Through Hole TO-247-3 - 3 - 6.39g - SILICON - - 650V 2.21V - - - - - - - - - - 1 - - - - - - - - - - - - - - 400V, 75A, 3 Ω, 15V - - - - -55°C~175°C TJ Tube - Automotive, AEC-Q101 e3 yes Not For New Designs 1 (Unlimited) 3 - - Tin (Sn) - - - 375W - - NOT SPECIFIED not_compliant - NOT SPECIFIED - - - - 71ns - Single - COLLECTOR Standard - 375W POWER CONTROL - - N-CHANNEL 650V 150A 85 ns TO-247AB - - - 87 ns 2.3V @ 15V, 75A - - 197 ns Trench Field Stop - 578nC 225A 32ns/166ns 2.85mJ (on), 1.2mJ (off) 20V 7.5V - - - - - - - ROHS3 Compliant -
              FGH75T65UPD-F085
              FGH75T65UPD-F085

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Infineon Technologies IRG4BC20W-SPBF
              Mfr. Тип
              IRG4BC20W-SPBF
              Anlielectronics Тип

              		Infineon Technologies
              IGBT 600V 13A 60W D2PAK
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 11 Weeks - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - 3 - - - SILICON - - 600V 2.6V - - - - - - - - - - 1 - - - - - - - - - - - - - - 480V, 6.5A, 50 Ω, 15V - - - - -55°C~150°C TJ Tube 2000 - e3 - Obsolete 1 (Unlimited) 2 - EAR99 Matte Tin (Sn) - with Nickel (Ni) barrier LOW CONDUCTION LOSS - 600V 60W SINGLE GULL WING 260 - 13A 30 - - R-PSSO-G2 - - - Dual 60W COLLECTOR Standard - - POWER CONTROL - 14ns N-CHANNEL 2.6V 13A - - - - - 36 ns 2.6V @ 15V, 6.5A - - 300 ns - - 26nC 52A 22ns/110ns 60μJ (on), 80μJ (off) 20V 6V - 96ns 9.652mm 10.668mm 4.826mm No No SVHC RoHS Compliant Lead Free
                IRG4BC20W-SPBF
                IRG4BC20W-SPBF

                Infineon Technologies
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                ON Semiconductor TIG067SS-TL-2W
                Mfr. Тип
                TIG067SS-TL-2W
                Anlielectronics Тип

                		ON Semiconductor
                Trans IGBT Chip N-CH 400V 8-Pin SOIC T/R
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 10 Weeks ACTIVE (Last Updated: 3 days ago) - Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - - - - - 400V - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 150°C TJ Tape & Reel (TR) 2016 - e3 yes Active 1 (Unlimited) - - EAR99 Tin (Sn) - - - 1.2W - - NOT SPECIFIED not_compliant - NOT SPECIFIED - 8 - - - - - - - Standard - - - Halogen Free - - 5V - - - - 400V - - 5V @ 4V, 150A - - - - - - 150A - - - - - - - - - - - ROHS3 Compliant Lead Free
                  TIG067SS-TL-2W
                  TIG067SS-TL-2W

                  ON Semiconductor
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor FGA20S120M
                  Mfr. Тип
                  FGA20S120M
                  Anlielectronics Тип

                  		ON Semiconductor
                  IGBT 1200V 40A 348W TO3PN
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - - Through Hole Through Hole TO-3P-3, SC-65-3 - 3 - 6.401g - SILICON - - 1.2kV 1.55V - - - - - - - - - - 1 - - - - - - - - - - - - - - - - - - - -55°C~175°C TJ Tube 2013 - e3 yes Obsolete 1 (Unlimited) 3 - EAR99 Tin (Sn) - 8541.29.00.95 - 348W - - - - - - - - - - - - Single - - Standard - 348W POWER CONTROL - - N-CHANNEL 1.2kV 40A - - 1200V - - 301 ns 1.85V @ 15V, 20A - - 865 ns Trench Field Stop - 208nC 60A - - - - - - 20.1mm 15.8mm 5mm No No SVHC RoHS Compliant -
                    FGA20S120M
                    FGA20S120M

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Infineon Technologies IHW25N120E1XKSA1
                    Mfr. Тип
                    IHW25N120E1XKSA1
                    Anlielectronics Тип

                    		Infineon Technologies
                    IGBT NPT/TRENCH 1200V 50A TO247
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 16 Weeks - Through Hole Through Hole TO-247-3 - - - - - SILICON - - 1.2kV - - - - - - - - - - - 1 - - - - - - - - - - - - - - - - - - - -40°C~150°C TJ Tube 2016 TrenchStop™ e3 yes Active Not Applicable 3 - EAR99 Tin (Sn) - - - 231W SINGLE - NOT SPECIFIED - - NOT SPECIFIED - - R-PSFM-T3 - - SINGLE WITH BUILT-IN DIODE - - - Standard - 231W POWER CONTROL - - N-CHANNEL 2V 50A - - 1200V - - - 2V @ 15V, 25A - - 1677 ns NPT and Trench - 147nC 75A - 800μJ (off) - - - - - - - - - ROHS3 Compliant -
                      IHW25N120E1XKSA1
                      IHW25N120E1XKSA1

                      Infineon Technologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Infineon Technologies IRGSL10B60KDPBF
                      Mfr. Тип
                      IRGSL10B60KDPBF
                      Anlielectronics Тип

                      		Infineon Technologies
                      IGBT 600V 22A 156W TO220-3
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 16 Weeks - Through Hole Through Hole TO-262-3 Long Leads, I2Pak, TO-262AA - 3 - 2.084002g - SILICON - - 600V 2.2V - - - - - - - - - - 1 - - - - - - - - - - - - - - 400V, 10A, 47 Ω, 15V - - - - -55°C~150°C TJ Tube 2004 - e3 - Obsolete 1 (Unlimited) 3 - EAR99 Matte Tin (Sn) - with Nickel (Ni) barrier - - - 156W - - 260 - - 40 - - - - 28ns - Single 156W - Standard - - MOTOR CONTROL - - N-CHANNEL 2.2V 22A 90 ns - - - - 50 ns 2.2V @ 15V, 10A - - 276 ns NPT - 38nC 44A 30ns/230ns 140μJ (on), 250μJ (off) 20V 5.5V - - 9.652mm 10.668mm 4.826mm No No SVHC RoHS Compliant Lead Free
                        IRGSL10B60KDPBF
                        IRGSL10B60KDPBF

                        Infineon Technologies
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Microchip Technology APT30GT60BRDQ2G
                        Mfr. Тип
                        APT30GT60BRDQ2G
                        Anlielectronics Тип

                        		Microchip Technology
                        IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHSView in Development Tools Selector
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - - - Through Hole TO-247-3 NO - TO-247 [B] - 3 SILICON APT30GT60 600 V - 2 V 64 A 64 A 1 MICROSEMI CORP APT30GT60BRDQ2G - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole 1 150 °C Tube PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Active TO-247AD 250 W Active NOT SPECIFIED 1.17 Details Yes 400V, 30A, 10Ohm, 15V - 345 ns 32 ns 1.340411 oz -55°C ~ 150°C (TJ) Tube - Thunderbolt IGBT® e1 Yes - - - - EAR99 Tin/Silver/Copper (Sn/Ag/Cu) - - - - SINGLE THROUGH-HOLE NOT SPECIFIED compliant - - - 3 R-PSFM-T3 Not Qualified - Single - 250 COLLECTOR Standard - 250 W POWER CONTROL - - N-CHANNEL - - - TO-247AD 600 V - 198 W - 2.5V @ 15V, 30A 64 A 64 - NPT 600 V 7.5 nC 110 A 12ns/225ns 80µJ (on), 605µJ (off) 30 V 5 V 22 ns - - - - - - - -
                          APT30GT60BRDQ2G
                          APT30GT60BRDQ2G

                          Microchip Technology
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          ON Semiconductor NGTB40N120IHRWG
                          Mfr. Тип
                          NGTB40N120IHRWG
                          Anlielectronics Тип

                          		ON Semiconductor
                          Trans IGBT Chip N-CH 1200V 120A 384000mW 3-Pin(3 Tab) TO-247 Tube
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 8 Weeks ACTIVE (Last Updated: 1 day ago) - Through Hole TO-247-3 NO 3 - 6.500007g - - - - 1.2kV 2.3V - - - - - - - - - - - - - - - - - - - - - - - - - 600V, 40A, 10 Ω, 15V - - - - -40°C~175°C TJ Tube 2009 - e3 yes Active 1 (Unlimited) - - EAR99 Tin (Sn) - - - 384W - - NOT SPECIFIED - - NOT SPECIFIED - 3 - - - - Single - - Standard - 384W - Halogen Free - N-CHANNEL 1.2kV 80A - - 1200V - - - 2.55V @ 15V, 40A - - - Trench Field Stop - 225nC 120A -/230ns 950μJ (off) 20V 6.5V - - 21.4mm 16.25mm 5.3mm - No SVHC ROHS3 Compliant Lead Free
                            NGTB40N120IHRWG
                            NGTB40N120IHRWG

                            ON Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            STMicroelectronics STGP20H60DF
                            Mfr. Тип
                            STGP20H60DF
                            Anlielectronics Тип

                            		STMicroelectronics
                            IGBT 600V 40A 167W TO220
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 20 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Through Hole TO-220-3 - - - - - - - - 600V 2V - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 20A, 10 Ω, 15V - - - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - - EAR99 - - - - 167W - - - - - - STGP20 - - - - - Single 167W - Standard - - - - - N-CHANNEL 600V 40A 90 ns - - - - - 2V @ 15V, 20A - - - Trench Field Stop - 115nC 80A 42.5ns/177ns 209μJ (on), 261μJ (off) 20V - - - - - - No - ROHS3 Compliant Lead Free
                              STGP20H60DF
                              STGP20H60DF

                              STMicroelectronics
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              STMicroelectronics STGW40H60DLFB
                              Mfr. Тип
                              STGW40H60DLFB
                              Anlielectronics Тип

                              		STMicroelectronics
                              Trans IGBT Chip N-CH 600V 40A 3-Pin(3 Tab) TO-247 Tube
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 20 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Through Hole TO-247-3 - 3 - 38.000013g - - - - 600V 1.6V - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 40A, 10 Ω, 15V - - - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - - EAR99 - - - - 283W - - NOT SPECIFIED - - NOT SPECIFIED STGW40 - - - - - Single - - Standard - 283W - - - N-CHANNEL 600V 80A - - - - - - 2V @ 15V, 40A - - - Trench Field Stop - 210nC 160A -/142ns 363μJ (off) 20V - - - 20.15mm 15.75mm 5.15mm - - ROHS3 Compliant -
                                STGW40H60DLFB
                                STGW40H60DLFB

                                STMicroelectronics
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Infineon Technologies IRGS4056DPBF
                                Mfr. Тип
                                IRGS4056DPBF
                                Anlielectronics Тип

                                		Infineon Technologies
                                IGBT 600V 24A 140W D2PAK
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 13 Weeks - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - 2 - 260.39037mg - - - - 600V 1.55V - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 12A, 22 Ω, 15V - - - - -55°C~175°C TJ Tube 2007 - - - Obsolete 1 (Unlimited) 2 - EAR99 - - - - 140W - GULL WING - - - - - - - - - - Single - - Standard - 140W - - - N-CHANNEL 1.85V 24A 68 ns - - - - - 1.85V @ 15V, 12A - - - Trench - 25nC 48A 31ns/83ns 75μJ (on), 225μJ (off) 30V 6.5V - 31ns 9.65mm 10.67mm 4.83mm No No SVHC RoHS Compliant Lead Free
                                  IRGS4056DPBF
                                  IRGS4056DPBF

                                  Infineon Technologies
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Infineon Technologies IRGS6B60KDPBF
                                  Mfr. Тип
                                  IRGS6B60KDPBF
                                  Anlielectronics Тип

                                  		Infineon Technologies
                                  IGBT 600V 13A 90W D2PAK
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 13 Weeks - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - 3 - - - SILICON - - 600V 2V - - - - - - - - - - 1 - - - - - - - - - - - - - - 400V, 5A, 100 Ω, 15V - - - - -55°C~150°C TJ Tube 2012 - e3 - Last Time Buy 1 (Unlimited) 2 - EAR99 Matte Tin (Sn) - with Nickel (Ni) barrier - - 600V 90W - GULL WING 260 - 13A 30 IRGS6B60KDPBF - R-PSSO-G2 - - - Single 90W COLLECTOR Standard - - MOTOR CONTROL - 17ns N-CHANNEL 2.2V 13A 70 ns - - - - 45 ns 2.2V @ 15V, 5A - - 258 ns NPT - 18.2nC 26A 25ns/215ns 110μJ (on), 135μJ (off) 20V 5.5V - 27ns 4.699mm 10.668mm 9.65mm No No SVHC ROHS3 Compliant Lead Free
                                    IRGS6B60KDPBF
                                    IRGS6B60KDPBF

                                    Infineon Technologies
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Infineon Technologies IRGB4060DPBF
                                    Mfr. Тип
                                    IRGB4060DPBF
                                    Anlielectronics Тип

                                    		Infineon Technologies
                                    IGBT 600V 16A 99W TO220AB
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 16 Weeks - Through Hole Through Hole TO-220-3 - 3 - 6.000006g - SILICON - - 1.95V 1.85V - - - - - - - - - - 1 - - - - - - - - - - - - - - 400V, 8A, 47 Ω, 15V 106 ns - - - -55°C~175°C TJ Tube 2006 - - - Obsolete 1 (Unlimited) 3 Through Hole EAR99 - - - - 99W - - - - - - - - - - - - Single 99W COLLECTOR Standard 39 ns - POWER CONTROL - 15ns N-CHANNEL 1.85V 16A 60 ns TO-220AB 600V - - 45 ns 1.85V @ 15V, 8A - - 152 ns Trench - 19nC 32A 30ns/95ns 70μJ (on), 145μJ (off) 20V 6.5V - 26ns 9.02mm 10.66mm 4.82mm No No SVHC RoHS Compliant Lead Free
                                      IRGB4060DPBF
                                      IRGB4060DPBF

                                      Infineon Technologies
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Infineon Technologies SGI02N120XKSA1
                                      Mfr. Тип
                                      SGI02N120XKSA1
                                      Anlielectronics Тип

                                      		Infineon Technologies
                                      IGBT 1200V 6.2A 62W TO262-3
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - - Through Hole Through Hole TO-262-3 Long Leads, I2Pak, TO-262AA - - - - - SILICON - - 1.2kV - - - - - - - - - - - 1 - - - - - - - - - - - - - - 800V, 2A, 91 Ω, 15V - - - - -55°C~150°C TJ Tube 2007 - - yes Obsolete 1 (Unlimited) 3 - EAR99 - - - - 62W - - NOT SPECIFIED - - NOT SPECIFIED - 3 R-PSIP-T3 Not Qualified - - Single - COLLECTOR Standard - 62W POWER CONTROL Halogen Free - N-CHANNEL 1.2kV 6.2A - - 1200V - - 40 ns 3.6V @ 15V, 2A - - 375 ns NPT - 11nC 9.6A 23ns/260ns 220μJ - - - - - - - - - RoHS Compliant Lead Free
                                        SGI02N120XKSA1
                                        SGI02N120XKSA1

                                        Infineon Technologies
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        ON Semiconductor FGH60N60SFDTU-F085
                                        Mfr. Тип
                                        FGH60N60SFDTU-F085
                                        Anlielectronics Тип

                                        		ON Semiconductor
                                        IGBT 600V 60A 378W TO247
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 5 Weeks - Through Hole Through Hole TO-247-3 - 3 - 6.39g - - - - 600V - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 60A, 5 Ω, 15V - - - - -55°C~150°C TJ Tube 2008 Automotive, AEC-Q101 e3 yes Active 1 (Unlimited) - - - Tin (Sn) - - - 378W - - NOT SPECIFIED not_compliant - NOT SPECIFIED - - - - - - Single - - Standard - 378W - - - - 2.9V 120A 55 ns - - - - - 2.9V @ 15V, 60A - - - Field Stop - 188nC 180A 26ns/134ns 1.97mJ (on), 570μJ (off) - - - - - - - - - ROHS3 Compliant -
                                          FGH60N60SFDTU-F085
                                          FGH60N60SFDTU-F085

                                          ON Semiconductor
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: AOD5B65M1,NGTB25N120LWG,STGP35HF60W,IXGP20N120A3,IXXH75N60C3D1.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - IGBTs - Single has 7211 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.