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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Base Product Number Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Gate-Emitter Leakage Current Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Styles Number of Elements Package Pd - Power Dissipation Product Status RoHS Test Conditions Turn Off Delay Time Unit Weight Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Voltage - Rated DC Max Power Dissipation Terminal Position Peak Reflow Temperature (Cel) Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Number of Outputs Qualification Status Operating Supply Voltage Rise Time-Max Configuration Element Configuration Power Dissipation Case Connection Input Type Turn On Delay Time Power - Max Clamping Voltage Transistor Application Halogen Free Rise Time Polarity/Channel Type Collector Emitter Voltage (VCEO) Max Collector Current Reverse Recovery Time Continuous Drain Current (ID) JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Drain to Source Breakdown Voltage Max Breakdown Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Continuous Collector Current Turn Off Time-Nom (toff) IGBT Type Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
Infineon Technologies IRGP4630DPBF
Mfr. Тип
IRGP4630DPBF
Anlielectronics Тип

Infineon Technologies
IGBT 600V 47A 206W TO247AC
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 - - Through Hole Through Hole TO-247-3 - 3 - - - - - 600V 1.65V - 47A - - - - - - - - - - - - 400V, 18A, 22 Ω, 15V - - -40°C~175°C TJ Tube 2012 - - - Obsolete 1 (Unlimited) - EAR99 - - - - 206W - NOT SPECIFIED - NOT SPECIFIED - - - - - - - - Single - - Standard - - - - - - - 1.95V 30A 100 ns - - - - - - 1.95V @ 15V, 18A - - - 35nC 54A 40ns/105ns 95μJ (on), 350μJ (off) - - - - - - - No SVHC RoHS Compliant -
    IRGP4630DPBF
    IRGP4630DPBF

    Infineon Technologies
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    IXYS IXGH6N170A
    Mfr. Тип
    IXGH6N170A
    Anlielectronics Тип

    		IXYS
    Trans IGBT Chip N-CH 1.7KV 6A 3-Pin(3 Tab) TO-247AD
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 30 Weeks - Through Hole Through Hole TO-247-3 - 3 - 6.500007g SILICON - - 1.7kV 5.4V - - - - - - - - - 1 - - - - 850V, 6A, 33 Ω, 15V 220 ns - -55°C~150°C TJ Tube 2003 - e3 yes Active 1 (Unlimited) 3 EAR99 Tin (Sn) - - - 75W - NOT SPECIFIED - NOT SPECIFIED IXG*6N170 3 - - Not Qualified - - - Single 75W COLLECTOR Standard 46 ns - - POWER CONTROL - - N-CHANNEL 1.7kV 6A - - TO-247AD 1700V - - 91 ns 7V @ 15V, 3A - 271 ns NPT 18.5nC 14A 46ns/220ns 590μJ (on), 180μJ (off) 20V 5V 65ns - - - - - ROHS3 Compliant Lead Free
      IXGH6N170A
      IXGH6N170A

      IXYS
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      STMicroelectronics STGB20M65DF2
      Mfr. Тип
      STGB20M65DF2
      Anlielectronics Тип

      		STMicroelectronics
      IGBT TRENCH 650V 40A D2PAK
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 30 Weeks ACTIVE (Last Updated: 8 months ago) - Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - - - - - - - - - - 40A - - - - - - - - - - - - 400V, 20A, 12 Ω, 15V - - -55°C~175°C TJ Tape & Reel (TR) - M - - Active 1 (Unlimited) - EAR99 - - - - - - NOT SPECIFIED - NOT SPECIFIED STGB20 - - - - - - - - - - Standard - 166W - - - - - - - 166ns - - 650V - - - 2V @ 15V, 20A - - Trench Field Stop 63nC 80A 26ns/108ns 140μJ (on), 560μJ (off) - - - - - - - - ROHS3 Compliant -
        STGB20M65DF2
        STGB20M65DF2

        STMicroelectronics
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor FGA25S125P-SN00337
        Mfr. Тип
        FGA25S125P-SN00337
        Anlielectronics Тип

        		ON Semiconductor
        IGBT 1250V 50A 250W TO-3PN
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 4 Weeks ACTIVE (Last Updated: 6 days ago) Through Hole Through Hole TO-3P-3, SC-65-3 - - - 6.401g SILICON - - 1.25kV - - - - - - - - - - 1 - - - - 600V, 25A, 10 Ω, 15V - - -55°C~175°C TJ Tube 2016 - - yes Active 1 (Unlimited) 3 - - - - - 250W SINGLE NOT SPECIFIED - NOT SPECIFIED - - R-PSFM-T3 - - - - SINGLE WITH BUILT-IN DIODE - - - Standard - 250W - POWER CONTROL - - N-CHANNEL 2.35V 50A - - - 1250V - - - 2.35V @ 15V, 25A - - Trench Field Stop 204nC 75A 24ns/502ns 1.09mJ (on), 580μJ (off) - - - - - - - - ROHS3 Compliant -
          FGA25S125P-SN00337
          FGA25S125P-SN00337

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Infineon Technologies IGW40N60TPXKSA1
          Mfr. Тип
          IGW40N60TPXKSA1
          Anlielectronics Тип

          		Infineon Technologies
          IGBT 600V 67A 246W TO247
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 14 Weeks - - Through Hole TO-247-3 NO - - - SILICON - - - - - 67A - - - - - - - 1 - - - - 400V, 40A, 10.1 Ω, 15V - - -40°C~175°C TJ Tube 2016 TrenchStop™ e3 yes Active Not Applicable 3 EAR99 Tin (Sn) - - - - SINGLE NOT SPECIFIED - NOT SPECIFIED - - R-PSFM-T3 - - - - SINGLE WITH BUILT-IN DIODE - - - Standard - 246W - POWER CONTROL - - N-CHANNEL - - - - - 600V - - 49 ns 1.8V @ 15V, 40A - 320 ns Trench Field Stop 177nC 120A 18ns/222ns 1.06mJ (on), 610μJ (off) - - - - - - - - ROHS3 Compliant -
            IGW40N60TPXKSA1
            IGW40N60TPXKSA1

            Infineon Technologies
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Microchip Technology APT25GR120SD15
            Mfr. Тип
            APT25GR120SD15
            Anlielectronics Тип

            		Microchip Technology
            IGBT Transistors FG, IGBT-COMBI, 1200V, 25A, TO-268View in Development Tools Selector
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - - - Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA - - D3Pak - - APT25GR120 - - 2.5 - 75 A 1 - - 20 V, + 20 V - Microchip Technology - - - Tube - Active Details 600V, 25A, 4.3Ohm, 15V - 0.218699 oz -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - - - - - - - - - - - - - - 521 - Standard - 521 W - - - - - - - - - - 1200 V - - - 3.2V @ 15V, 25A 75 - NPT 203 nC 100 A 16ns/122ns 742µJ (on), 427µJ (off) - - - - - - - - - -
              APT25GR120SD15
              APT25GR120SD15

              Microchip Technology
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              STMicroelectronics STGD20N45LZAG
              Mfr. Тип
              STGD20N45LZAG
              Anlielectronics Тип

              		STMicroelectronics
              POWER TRANSISTORS
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 8 Weeks ACTIVE (Last Updated: 8 months ago) - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - - - - - - - - - - 25A - - - - - - - - - - - - 300V, 10A, 1k Ω, 5V - - -55°C~175°C TJ Tape & Reel (TR) - Automotive, AEC-Q101 - - Active 1 (Unlimited) - - - - - - - - - - - STGD20 - - - - - - - - - - Logic - 125W - - - - - - - - - - 450V - - - 1.25V @ 4V, 6A - - - 26nC 50A 1.1μs/4.6μs - - - - - - - - - ROHS3 Compliant -
                STGD20N45LZAG
                STGD20N45LZAG

                STMicroelectronics
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Atmel (Microchip Technology) APT33GF120LRDQ2G
                Mfr. Тип
                APT33GF120LRDQ2G
                Anlielectronics Тип

                		Atmel (Microchip Technology)
                IGBT Transistors IGBT NPT Low Frequency Combi 1200 V 33 A TO-264View in Development Tools Selector
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - - - - TO-264-3 - - - - - - 1.2 kV - - 64 A - 1 120 nA - 20 V, + 20 V + 150 C - - 55 C Through Hole - - 357 W - Details - - - - Tube - - - - - - - - - - - - - - - - - - - - - - - - Single - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                  APT33GF120LRDQ2G
                  APT33GF120LRDQ2G

                  Atmel (Microchip Technology)
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor NGTB30N135IHR1WG
                  Mfr. Тип
                  NGTB30N135IHR1WG
                  Anlielectronics Тип

                  		ON Semiconductor
                  In a Pack of 2, ON Semiconductor NGTB30N135IHR1WG IGBT, 60 A 1350 V, 3-Pin TO-247
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 5 Weeks ACTIVE (Last Updated: 3 days ago) Through Hole Through Hole TO-247-3 - - - - - - - 1.35kV - - - - - - - - - - - - - - - 600V, 30A, 10 Ω, 15V - - -40°C~175°C TJ Tube 2015 - - yes Active 1 (Unlimited) - - - - - - 394W - - - - - - - - - - - - - - - Standard - 394W - - - - - 3V 60A - - - 1350V - - - 3V @ 15V, 30A - - Trench Field Stop 220nC 120A -/200ns 630μA (off) - - - - - - - - ROHS3 Compliant Lead Free
                    NGTB30N135IHR1WG
                    NGTB30N135IHR1WG

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Infineon Technologies IRG4IBC30FDPBF
                    Mfr. Тип
                    IRG4IBC30FDPBF
                    Anlielectronics Тип

                    		Infineon Technologies
                    IGBT 600V 20.3A 45W TO220FP
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - - Through Hole Through Hole TO-220-3 Full Pack - 3 TO-220AB Full-Pak - - - - 600V 1.8V - 20.3A - - - - - - - - - - - - 480V, 17A, 23Ohm, 15V 310 ns - -55°C~150°C TJ Tube 2004 - - - Obsolete 1 (Unlimited) - - - 150°C -55°C 600V 45W - - 20.3A - - - - - - - - - Single 45W - Standard 42 ns 45W - - - 26ns - 1.8V 20.3A 42 ns - - 600V - - - 1.8V @ 15V, 17A - - - 51nC 120A 42ns/230ns 630μJ (on), 1.39mJ (off) - - - - - - No - RoHS Compliant Lead Free
                      IRG4IBC30FDPBF
                      IRG4IBC30FDPBF

                      Infineon Technologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      ON Semiconductor FGD4536TM
                      Mfr. Тип
                      FGD4536TM
                      Anlielectronics Тип

                      		ON Semiconductor
                      Trans IGBT Chip N-CH 360V 3-Pin(2 Tab) TO-252 T/R
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 6 Weeks - Surface Mount Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - 3 - 260.36202mg - - - 360V 1.59V - - - - - - - - - - - - - - - - - -55°C~150°C TJ Cut Tape (CT) 2013 - e3 - Discontinued 1 (Unlimited) - EAR99 Tin (Sn) - - - 125W - - - - FGD4536 - - - - - - - Single - - Standard - 125W - - - - - 360V 220A - - - - - 360V - 1.8V @ 15V, 50A - - Trench 47nC - - - - - - 2.39mm 6.73mm 6.22mm No - ROHS3 Compliant -
                        FGD4536TM
                        FGD4536TM

                        ON Semiconductor
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Infineon Technologies AUIRGP66524D0
                        Mfr. Тип
                        AUIRGP66524D0
                        Anlielectronics Тип

                        		Infineon Technologies
                        IGBT 600V 60A 214W TO-247AC
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 15 Weeks - Through Hole Through Hole TO-247-3 - - TO-247AC - - - - 600V - - 60A - - - - - - - - - - - - 400V, 24A, 10Ohm, 15V - - -55°C~175°C TJ Tube 2014 - - - Obsolete 1 (Unlimited) - - - - - - 214W - - - - - - - - - - - - - - - Standard - 214W - - - - - 1.9V 60A 176 ns - - 600V - - - 1.9V @ 15V, 24A - - - 80nC 72A 30ns/75ns 915μJ (on), 280μJ (off) - - - - - - - - ROHS3 Compliant -
                          AUIRGP66524D0
                          AUIRGP66524D0

                          Infineon Technologies
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          STMicroelectronics STGP20M65DF2
                          Mfr. Тип
                          STGP20M65DF2
                          Anlielectronics Тип

                          		STMicroelectronics
                          IGBT TRENCH 650V 40A TO220
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 30 Weeks ACTIVE (Last Updated: 8 months ago) - Through Hole TO-220-3 - - - - - - - - - - 40A - - - - - - - - - - - - 400V, 20A, 12 Ω, 15V - - -55°C~175°C TJ - - M - - Active 1 (Unlimited) - EAR99 - - - - - - NOT SPECIFIED - NOT SPECIFIED STGP20 - - - - - - - - - - Standard - 166W - - - - - - - 166ns - - 650V - - - 2V @ 15V, 20A - - Trench Field Stop 63nC 80A 26ns/108ns 140μJ (on), 560μJ (off) - - - - - - - - ROHS3 Compliant -
                            STGP20M65DF2
                            STGP20M65DF2

                            STMicroelectronics
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Infineon Technologies IKQ75N120CH3XKSA1
                            Mfr. Тип
                            IKQ75N120CH3XKSA1
                            Anlielectronics Тип

                            		Infineon Technologies
                            IGBT HS SW 1200V 75A TO-247-3
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 16 Weeks - - Through Hole TO-247-3 NO - - - SILICON - - - - - 150A - - - - - - - 1 - - - - 600V, 75A, 6 Ω, 15V - - -40°C~175°C TJ Tube 2014 - - - Active 1 (Unlimited) 3 EAR99 - - - - - SINGLE NOT SPECIFIED - NOT SPECIFIED - - R-PSFM-T3 - - - - SINGLE WITH BUILT-IN DIODE - - - Standard - 938W - POWER CONTROL - - N-CHANNEL - - - - - 1200V - - 81 ns 2.35V @ 15V, 75A - 454 ns - 370nC 300A 34ns/282ns 6.4mJ (on), 2.8mJ (off) - - - - - - - - ROHS3 Compliant -
                              IKQ75N120CH3XKSA1
                              IKQ75N120CH3XKSA1

                              Infineon Technologies
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              STMicroelectronics STGW20H60DF
                              Mfr. Тип
                              STGW20H60DF
                              Anlielectronics Тип

                              		STMicroelectronics
                              IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 20 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Through Hole TO-247-3 - 3 - - - - - 600V 2V - - - - - - - - - - - - - - 400V, 20A, 10 Ω, 15V - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - EAR99 - - - - 167W - - - - STGW20 - - - - - - - Single 167W - Standard - - - - - - - 600V 40A 90ns - - - - - - 2V @ 15V, 20A - - Trench Field Stop 115nC 80A 42.5ns/177ns 209μJ (on), 261μJ (off) - - - 20.15mm 15.75mm 5.15mm No - ROHS3 Compliant -
                                STGW20H60DF
                                STGW20H60DF

                                STMicroelectronics
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Infineon Technologies SGW25N120FKSA1
                                Mfr. Тип
                                SGW25N120FKSA1
                                Anlielectronics Тип

                                		Infineon Technologies
                                IGBT 1200V 46A 313W TO247-3
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 14 Weeks - - Through Hole TO-247-3 NO - - - SILICON - - - - - 46A - - - - - - - 1 - - - - 800V, 25A, 22 Ω, 15V - - -55°C~150°C TJ Tube 2008 - e3 yes Last Time Buy 1 (Unlimited) 3 EAR99 Tin (Sn) - - - - SINGLE NOT SPECIFIED - NOT SPECIFIED - 3 R-PSFM-T3 - Not Qualified - - SINGLE - - COLLECTOR Standard - 313W - POWER CONTROL - - N-CHANNEL - - - - TO-247AC 1200V - - 86 ns 3.6V @ 15V, 25A - 862 ns NPT 225nC 84A 45ns/730ns 3.7mJ - - - - - - - - ROHS3 Compliant -
                                  SGW25N120FKSA1
                                  SGW25N120FKSA1

                                  Infineon Technologies
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ON Semiconductor FGA15N120ANTDTU
                                  Mfr. Тип
                                  FGA15N120ANTDTU
                                  Anlielectronics Тип

                                  		ON Semiconductor
                                  IGBT 1200V 30A 186W TO3P
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - - Through Hole Through Hole TO-3P-3, SC-65-3 - 3 - - - - - 1.2kV 2.4V - - - - - - - - - - - - - - 600V, 15A, 10 Ω, 15V - - -55°C~150°C TJ Tube 2006 - - yes Obsolete 1 (Unlimited) - EAR99 - - - 1.2kV 186W - - 15A - - - - - - - - - Single 186W - Standard - - - - - - N-CHANNEL 1.2kV 30A 330ns 15A - 1200V 1.2kV - - 2.4V @ 15V, 15A - - NPT and Trench 120nC 45A 15ns/160ns 3mJ (on), 600μJ (off) 20V 8.5V 180ns - - - - No SVHC RoHS Compliant Lead Free
                                    FGA15N120ANTDTU
                                    FGA15N120ANTDTU

                                    ON Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Microchip Technology APT35GA90B
                                    Mfr. Тип
                                    APT35GA90B
                                    Anlielectronics Тип

                                    		Microchip Technology
                                    IGBT Transistors FG, IGBT, 900V, TO-247View in Development Tools Selector
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - Production (Last Updated: 2 months ago) Through Hole Through Hole TO-247-3 - - TO-247 [B] - - APT35GA90 900 V 900 V 2.5 V 63 A 63 A 1 - - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole - Tube 290 W Active Details 600V, 18A, 10Ohm, 15V - 0.208116 oz -55°C ~ 150°C (TJ) Tube - POWER MOS 8™ - - - - - - - 150 °C -55 °C - 290 W - - - - - - - - - - - Single Single - - Standard - 290 W - - - - - 900 V 63 A - - - 900 V - - - 3.1V @ 15V, 18A - - PT 84 nC 105 A 12ns/104ns 642µJ (on), 382µJ (off) - - - - - - No - - -
                                      APT35GA90B
                                      APT35GA90B

                                      Microchip Technology
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor ISL9V5036P3-F085
                                      Mfr. Тип
                                      ISL9V5036P3-F085
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      Motor / Motion / Ignition Controllers & Drivers N-Ch 360V 46A 0.8ohm
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 4 Weeks - Through Hole Through Hole TO-220-3 - 3 - 1.8g SILICON - - 390V 1.17V - - - - - - - - - 1 - - - - 300V, 1k Ω, 5V - - -40°C~175°C TJ Tube 2017 Automotive, AEC-Q101, EcoSPARK® e3 yes Active 1 (Unlimited) 3 - Tin (Sn) - - - 250W - - - - ISL9V5036 - - 1 - 360V 7000ns - Single - COLLECTOR Logic - 250W 360V POWER CONTROL - - N-CHANNEL 1.6V 46A - - TO-220AB - - - 2800 ns 1.6V @ 4V, 10A - 13600 ns - 32nC - -/10.8μs - - 2.2V - - - - No No SVHC ROHS3 Compliant -
                                        ISL9V5036P3-F085
                                        ISL9V5036P3-F085

                                        ON Semiconductor
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        ON Semiconductor TIG065E8-TL-H
                                        Mfr. Тип
                                        TIG065E8-TL-H
                                        Anlielectronics Тип

                                        		ON Semiconductor
                                        IGBT, N-Channel, 400V, 150A, VCE(sat); 4.2V, Single ECH8
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 4 Weeks ACTIVE (Last Updated: 1 day ago) Surface Mount Surface Mount 8-SMD, Flat Lead - 8 - - - - - 400V 4.2V - - - - - - - - - - - - - - - - - 150°C TJ Tape & Reel (TR) 2012 - e6 yes Active 1 (Unlimited) - EAR99 Tin/Bismuth (Sn/Bi) - - - - - - - - - - - - - - - - Single - - Standard - - - - Halogen Free - - 400V 150A - - - - - 400V - 7V @ 2.5V, 100A - - - - - - - - - - 900μm 2.9mm 2.3mm No - ROHS3 Compliant Lead Free
                                          TIG065E8-TL-H
                                          TIG065E8-TL-H

                                          ON Semiconductor
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
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                                          Discrete Semiconductor Products

                                          Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: IRGP4630DPBF,IXGH6N170A,STGB20M65DF2,FGA25S125P-SN00337,IGW40N60TPXKSA1.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - IGBTs - Single has 7211 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.