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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Base Product Number Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Continuous Collector Current Ic Max Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Gate-Emitter Leakage Current Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Styles Number of Elements Package Pd - Power Dissipation Product Status RoHS Test Conditions Tradename Turn Off Delay Time Unit Weight Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Configuration Element Configuration Power Dissipation Case Connection Input Type Turn On Delay Time Power - Max Clamping Voltage Transistor Application Halogen Free Rise Time Polarity/Channel Type Collector Emitter Voltage (VCEO) Max Collector Current Operating Temperature Range Reverse Recovery Time JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Max Breakdown Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Continuous Collector Current Turn Off Time-Nom (toff) IGBT Type Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
Infineon Technologies IHW20N65R5XKSA1
Mfr. Тип
IHW20N65R5XKSA1
Anlielectronics Тип

Infineon Technologies
IGBT 650V 40A 150W TO247
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 26 Weeks - - Through Hole Through Hole TO-247-3 - - - - SILICON - - 650V - - - - - - - - - - - 1 - - - - 400V, 10A, 20 Ω, 15V - - - -40°C~175°C TJ Tube 2013 TrenchStop® - yes Active 1 (Unlimited) 3 - EAR99 - - - - - - 150W - - NOT SPECIFIED - - NOT SPECIFIED - - R-PSFM-T3 - - Single - - Standard - 150W - POWER CONTROL Halogen Free - N-CHANNEL 650V 40A - 68 ns - - - 38 ns 1.7V @ 15V, 20A - 310 ns - 97nC 60A 24ns/250ns 300μJ (on), 70μJ (off) - - - - - - - - ROHS3 Compliant Lead Free
    IHW20N65R5XKSA1
    IHW20N65R5XKSA1

    Infineon Technologies
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Atmel (Microchip Technology) APT20GN60SDQ2G
    Mfr. Тип
    APT20GN60SDQ2G
    Anlielectronics Тип

    		Atmel (Microchip Technology)
    IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 20 A TO-268View in Development Tools Selector
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - - - - - D3PAK-3 - - - - - - 600 V - - 40 A - - 1 300 nA - 20 V, + 20 V + 175 C - - 55 C SMD/SMT - - 136 W - Details - - - - - Tube - - - - - - - - - - - - - - - - - - - - - - - - - - Single - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
      APT20GN60SDQ2G
      APT20GN60SDQ2G

      Atmel (Microchip Technology)
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      STMicroelectronics STGY50NC60WD
      Mfr. Тип
      STGY50NC60WD
      Anlielectronics Тип

      		STMicroelectronics
      IGBT, N 600V 19A MAX247 - More Details
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 8 Weeks ACTIVE (Last Updated: 8 months ago) Tin Through Hole Through Hole TO-247-3 - 247 - - SILICON - - 600V 2.5V - - - - - - - - - - 1 - - - - 390V, 40A, 10 Ω, 15V - 240 ns - -55°C~150°C TJ Tube - PowerMESH™ - - Active 1 (Unlimited) 3 Through Hole EAR99 - - - - - - 278W - - - - - - STGY50 3 R-PSFM-T3 - - Single 260W - Standard 52 ns 278W - POWER CONTROL - 17ns N-CHANNEL 600V 110A - 55 ns - - - 69 ns 2.6V @ 15V, 40A - 271 ns - 195nC 180A 52ns/240ns 365μJ (on), 560μJ (off) 20V 5.75V - 20.3mm 15.9mm 5.3mm No No SVHC ROHS3 Compliant Lead Free
        STGY50NC60WD
        STGY50NC60WD

        STMicroelectronics
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor NGTB50N60FWG
        Mfr. Тип
        NGTB50N60FWG
        Anlielectronics Тип

        		ON Semiconductor
        Trans IGBT Chip N-CH 600V 100A 3-Pin(3 Tab) TO-247 Rail
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - LAST SHIPMENTS (Last Updated: 21 hours ago) - - - TO-247 NO 3 - - - - - 600V 1.45V - - - - - - - - - - - - - - - - - 285 ns - - Tube 2011 - e3 yes Obsolete 1 (Unlimited) - - EAR99 Tin (Sn) 150°C -55°C - - - 223W - - NOT SPECIFIED - - NOT SPECIFIED - 3 - - - Single 223W - - 117 ns - - - Halogen Free - N-CHANNEL 600V 100A - 77 ns - - - - - - - - - - - - 20V 6.5V - 21.4mm 16.25mm 5.3mm - No SVHC RoHS Compliant Lead Free
          NGTB50N60FWG
          NGTB50N60FWG

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Atmel (Microchip Technology) APT15GT120BRDQ1G
          Mfr. Тип
          APT15GT120BRDQ1G
          Anlielectronics Тип

          		Atmel (Microchip Technology)
          IGBT Transistors FG, IGBT, 1200V, 15A, TO-247, RoHSView in Development Tools Selector
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 - - - - - TO-247-3 - - - - - - 1.2 kV - 3 V 36 A 36 A - 1 480 nA - 30 V, + 30 V + 150 C - - 55 C Through Hole - - 250 W - Details - Thunderbolt IGBT - 1.340411 oz - Tube - - - - - - - - - - - - - - - - - - - - - - - - - - Single - - - - - - - - - - - - - - 55 C to + 150 C - - - - - - 36 A - - - - - - - - - 5.31 mm 21.46 mm 16.26 mm - - - -
            APT15GT120BRDQ1G
            APT15GT120BRDQ1G

            Atmel (Microchip Technology)
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            STMicroelectronics STGW15M120DF3
            Mfr. Тип
            STGW15M120DF3
            Anlielectronics Тип

            		STMicroelectronics
            STMICROELECTRONICS STGW15M120DF3 IGBT Single Transistor, 30 A, 1.85 V, 259 W, 1.2 kV, TO-247, 3 Pins
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 30 Weeks ACTIVE (Last Updated: 8 months ago) - Through Hole Through Hole TO-247-3 - 3 - 38.000013g - - - 1.2kV 1.85V - - - - - - - - - - - - - - - 600V, 15A, 22 Ω, 15V - - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - - EAR99 - - - - - - 259W - - NOT SPECIFIED - - NOT SPECIFIED STGW15 - - - - Single - - Standard - 259W - - - - - 1.2kV 30A - 270 ns - 1200V - - 2.3V @ 15V, 15A - - Trench Field Stop 226nC 60A 26ns/122ns 550μJ (on), 850μJ (off) - - - - - - - No SVHC ROHS3 Compliant -
              STGW15M120DF3
              STGW15M120DF3

              STMicroelectronics
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Infineon Technologies IRG4BC15MDPBF
              Mfr. Тип
              IRG4BC15MDPBF
              Anlielectronics Тип

              		Infineon Technologies
              IGBT 600V 14A 49W TO220AB
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - - - Through Hole Through Hole TO-220-3 - 3 TO-220AB 6.000006g - - - 600V 2.3V - - 14A - - - - - - - - - - - - 480V, 8.6A, 75Ohm, 15V - - - -55°C~150°C TJ Tube 2004 - - - Obsolete 1 (Unlimited) - - - - 150°C -55°C - - 600V 49W - - - - 14A - - - - - - Single 49W - Standard - 49W - - - 38ns - 2.3V 14A - 28 ns - 600V - - 2.3V @ 15V, 8.6A - - - 46nC 28A 21ns/540ns 320μJ (on), 1.93mJ (off) - - - 15.24mm 10.5156mm 4.699mm No - RoHS Compliant Lead Free
                IRG4BC15MDPBF
                IRG4BC15MDPBF

                Infineon Technologies
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                ON Semiconductor NGTB60N60SWG
                Mfr. Тип
                NGTB60N60SWG
                Anlielectronics Тип

                		ON Semiconductor
                ON SEMICONDUCTOR NGTB60N60SWGIGBT Single Transistor, 120 A, 2 V, 298 W, 600 V, TO-247, 3 Pins
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 6 Weeks LAST SHIPMENTS (Last Updated: 2 days ago) - Through Hole Through Hole TO-247-3 - 3 - 38.000013g - - - 600V 2.6V - - - - - - - - - - - - - - - 400V, 60A, 10 Ω, 15V - - - -55°C~150°C TJ Tube 2011 - e3 yes Obsolete 1 (Unlimited) - - - Tin (Sn) - - - - - 298W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - Single - - Standard - 298W - - - - N-CHANNEL 600V 120A - 76 ns - - - - 2.5V @ 15V, 60A - - Trench Field Stop 173nC 240A 87ns/180ns 1.41mJ (on), 600μJ (off) 20V 6.5V - 21.08mm 16.26mm 5.3mm - No SVHC RoHS Compliant Lead Free
                  NGTB60N60SWG
                  NGTB60N60SWG

                  ON Semiconductor
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Microchip Technology APT40GP60B2DQ2G
                  Mfr. Тип
                  APT40GP60B2DQ2G
                  Anlielectronics Тип

                  		Microchip Technology
                  IGBT Transistors FG, IGBT-COMBI, 600V, TO-247 T-MAX, RoHSView in Development Tools Selector
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - - - - Through Hole TO-247-3 Variant - - - - - APT40GP60 600 V - 2.2 V 100 A - 100 A 1 - - 20 V, + 20 V + 150 C Microchip Technology - 55 C Through Hole - Tube 543 W Active Details 400V, 40A, 5Ohm, 15V - - - -55°C ~ 150°C (TJ) Tube - POWER MOS 7® - - - - - - - - - - - - - - - - - - - - - - - - Single - 543 - Standard - 543 W - - - - - - - - - - 600 V - - 2.7V @ 15V, 40A 100 - PT 135 nC 160 A 20ns/64ns 385µJ (on), 350µJ (off) - - - - - - - - - -
                    APT40GP60B2DQ2G
                    APT40GP60B2DQ2G

                    Microchip Technology
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    IXYS IXGA30N120B3
                    Mfr. Тип
                    IXGA30N120B3
                    Anlielectronics Тип

                    		IXYS
                    IXYS SEMICONDUCTOR IXGA30N120B3 IGBT Single Transistor, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263, 3 Pins
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 30 Weeks - - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - 3 - - SILICON - - 1.2kV 2.96V - - - - - - - - - - 1 - - - - 960V, 30A, 5 Ω, 15V - - - -55°C~150°C TJ Tube 2008 GenX3™ e3 yes Active 1 (Unlimited) 2 - EAR99 PURE TIN - - LOW CONDUCTION LOSS - - 300W - GULL WING NOT SPECIFIED unknown - NOT SPECIFIED IXG*30N120 4 R-PSSO-G2 Not Qualified - Single 300W COLLECTOR Standard - - - POWER CONTROL - - N-CHANNEL 1.2kV 60A - - - 1200V - 56 ns 3.5V @ 15V, 30A - 471 ns PT 87nC 150A 16ns/127ns 3.47mJ (on), 2.16mJ (off) 20V 5V - - - - - No SVHC ROHS3 Compliant -
                      IXGA30N120B3
                      IXGA30N120B3

                      IXYS
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      STMicroelectronics STGWT30HP65FB
                      Mfr. Тип
                      STGWT30HP65FB
                      Anlielectronics Тип

                      		STMicroelectronics
                      IGBT TRENCH 650V 60A TO3P
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 32 Weeks ACTIVE (Last Updated: 8 months ago) - - Through Hole TO-3P-3, SC-65-3 - - - - - - - - - - - 60A - - - - - - - - - - - - 400V, 30A, 10 Ω, 15V - - - -55°C~175°C TJ - - HB - - Active 1 (Unlimited) - - - - - - - - - - - - NOT SPECIFIED - - NOT SPECIFIED STGWT30 - - - - - - - Standard - 260W - - - - - - - - 140ns - 650V - - 2V @ 15V, 30A - - Trench Field Stop 149nC 120A -/146ns 293μJ (off) - - - - - - - - ROHS3 Compliant -
                        STGWT30HP65FB
                        STGWT30HP65FB

                        STMicroelectronics
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        ON Semiconductor ISL9V2040S3ST
                        Mfr. Тип
                        ISL9V2040S3ST
                        Anlielectronics Тип

                        		ON Semiconductor
                        IGBT 430V 10A 130W TO263AB
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 5 Weeks - - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - 3 - 1.31247g SILICON - - 430V - - - - - - - - - - - 1 - - - - 300V, 1k Ω, 5V - - - -40°C~175°C TJ Tape & Reel (TR) - EcoSPARK® e3 yes Active 1 (Unlimited) 2 - EAR99 Tin (Sn) - - - 8541.29.00.95 400V 130W - GULL WING - - 10A - ISL9V2040 - R-PSSO-G2 - - Single 130W COLLECTOR Logic - - 400V AUTOMOTIVE IGNITION - 2.17μs N-CHANNEL 1.9V 10A - - - - 430V 2780 ns 1.9V @ 4V, 6A - 6000 ns - 12nC - -/3.64μs - 12V - - - - - No - ROHS3 Compliant Lead Free
                          ISL9V2040S3ST
                          ISL9V2040S3ST

                          ON Semiconductor
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          ON Semiconductor FGH40T100SMD-F155
                          Mfr. Тип
                          FGH40T100SMD-F155
                          Anlielectronics Тип

                          		ON Semiconductor
                          IGBT 1000V 80A 333W TO247-3
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 9 Weeks ACTIVE (Last Updated: 1 day ago) - Through Hole Through Hole TO-247-3 - 3 - - - - - 1kV - - - - - - - - - - - - - - - - 600V, 40A, 10 Ω, 15V - - - -55°C~175°C TJ Tube 2014 - - - Active 1 (Unlimited) - - EAR99 - - - - - - 333W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - Single - - Standard - 333W - - - - - 2.3V 80A - 78 ns - 1000V - - 2.3V @ 15V, 40A - - Trench Field Stop 398nC 120A 29ns/285ns 2.35mJ (on), 1.15mJ (off) - - - - - - - - ROHS3 Compliant -
                            FGH40T100SMD-F155
                            FGH40T100SMD-F155

                            ON Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            IXYS IXGH16N170
                            Mfr. Тип
                            IXGH16N170
                            Anlielectronics Тип

                            		IXYS
                            Trans IGBT Chip N-CH 1.7KV 32A 3-Pin(3 Tab) TO-247AD
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 28 Weeks - - Through Hole Through Hole TO-247-3 - 3 - 6.500007g SILICON - - 1.7kV 2.7V - - - - - - - - - - 1 - - - - 1360V, 16A, 10 Ω, 15V - 200 ns - -55°C~150°C TJ Tube 2006 - e1 yes Active 1 (Unlimited) 2 - EAR99 Tin/Silver/Copper (Sn/Ag/Cu) - - - - - 190W - GULL WING - - - - IXG*16N170 3 R-PSSO-G2 - - Single 190W COLLECTOR Standard 45 ns - - POWER CONTROL - - N-CHANNEL 1.7kV 32A - - TO-268AA 1700V - 90 ns 3.5V @ 15V, 16A - 1600 ns NPT 78nC 80A 45ns/400ns 9.3mJ (off) 20V 5V 1100ns 21.46mm 16.26mm 5.3mm No - ROHS3 Compliant Lead Free
                              IXGH16N170
                              IXGH16N170

                              IXYS
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Infineon Technologies IKA15N65ET6XKSA2
                              Mfr. Тип
                              IKA15N65ET6XKSA2
                              Anlielectronics Тип

                              		Infineon Technologies
                              HOME APPLIANCES 14
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 16 Weeks - - - Through Hole TO-220-3 Full Pack NO - - - SILICON - - - - - - 17A - - - - - - - 1 - - - - 400V, 11.5A, 47 Ω, 15V - - - -40°C~175°C TJ Tube 2008 TrenchStop™ e3 - Active 1 (Unlimited) 3 - EAR99 Tin (Sn) - - - - - - SINGLE - NOT SPECIFIED - - NOT SPECIFIED - - R-PSFM-T3 - SINGLE WITH BUILT-IN DIODE - - ISOLATED Standard - 45W - POWER CONTROL - - N-CHANNEL - - - 69ns TO-220AB 650V - 50 ns 1.9V @ 15V, 11.5A - 202 ns Trench Field Stop 37nC 57.5A 30ns/117ns 230μJ (on), 110μJ (off) - - - - - - - - ROHS3 Compliant -
                                IKA15N65ET6XKSA2
                                IKA15N65ET6XKSA2

                                Infineon Technologies
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                STMicroelectronics STGP30NC60S
                                Mfr. Тип
                                STGP30NC60S
                                Anlielectronics Тип

                                		STMicroelectronics
                                Trans IGBT Chip N-CH 600V 55A 3-Pin(3 Tab) TO-220 Tube
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - - Through Hole Through Hole TO-220-3 - - - - SILICON - - 600V - - - - - - - - - - - 1 - - - - 480V, 20A, 10 Ω, 15V - - - -55°C~150°C TJ Tube - PowerMESH™ - yes Obsolete 1 (Unlimited) 3 - EAR99 - - - - - - 175W - - - - - - STGP30 3 R-PSFM-T3 - - Single - COLLECTOR Standard - 175W - POWER CONTROL - - N-CHANNEL 600V 55A - - TO-220AB - - 30 ns 1.9V @ 15V, 20A - 555 ns - 96nC 150A 21.5ns/180ns 300μJ (on), 1.28mJ (off) 20V 5.75V - - - - No - ROHS3 Compliant -
                                  STGP30NC60S
                                  STGP30NC60S

                                  STMicroelectronics
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Microchip Technology APT100GN60LDQ4G
                                  Mfr. Тип
                                  APT100GN60LDQ4G
                                  Anlielectronics Тип

                                  		Microchip Technology
                                  IGBT Transistors FG, IGBT, 600V, TO-264, RoHSView in Development Tools Selector
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - - - - Through Hole TO-264-3 - - TO-264 [L] - - APT100 600 V - 1.45 V 229 A 229 A 229 A 1 600 nA - 30 V, + 30 V + 175 C Microchip Technology - 55 C Through Hole - Tube 625 W Active Details 400V, 100A, 1Ohm, 15V - - 0.373904 oz -55°C ~ 175°C (TJ) Tube - - - - - - - - - - - - - - - - - - - - - - - - - - Single - 625 - Standard - 625 W - - - - - - - - 55 C to + 175 C - - 600 V - - 1.85V @ 15V, 100A 229 A - Trench Field Stop 600 nC 300 A 31ns/310ns 4.75mJ (on), 2.675mJ (off) - - - 5.21 mm 26.49 mm 20.5 mm - - - -
                                    APT100GN60LDQ4G
                                    APT100GN60LDQ4G

                                    Microchip Technology
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    ON Semiconductor FGH75N60SFTU
                                    Mfr. Тип
                                    FGH75N60SFTU
                                    Anlielectronics Тип

                                    		ON Semiconductor
                                    Trans IGBT Chip N-CH 600V 150A 3-Pin(3 Tab) TO-247AB Tube
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - - - Through Hole Through Hole TO-247-3 - 3 - 6.39g SILICON - - 600V - - - - - - - - - - - 1 - - - - 400V, 75A, 3 Ω, 15V - - - -55°C~150°C TJ Tube - - e3 yes Not For New Designs 1 (Unlimited) 3 - EAR99 MATTE TIN - - - 8541.29.00.95 - 452W - - - - - - - - - - - Single - COLLECTOR Standard - 452W - POWER CONTROL - - N-CHANNEL 600V 150A - - TO-247AB - - 87 ns 2.9V @ 15V, 75A - 159 ns Field Stop 250nC 225A 26ns/138ns 2.7mJ (on), 1mJ (off) - - - - - - No - ROHS3 Compliant -
                                      FGH75N60SFTU
                                      FGH75N60SFTU

                                      ON Semiconductor
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor FGP30N6S2
                                      Mfr. Тип
                                      FGP30N6S2
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      IGBT 600V 45A 167W TO220AB
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - - - - Through Hole TO-220-3 - - TO-220-3 - - - - - - - - 45A - - - - - - - - - - - - 390V, 12A, 10Ohm, 15V - - - -55°C~150°C TJ Tube - - - - Obsolete 1 (Unlimited) - - - - - - - - - - - - - - - - - - - - - - - - Standard - 167W - - - - - - - - - - 600V - - 2.5V @ 15V, 12A - - - 23nC 108A 6ns/40ns 55μJ (on), 100μJ (off) - - - - - - - - - -
                                        FGP30N6S2
                                        FGP30N6S2

                                        ON Semiconductor
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Infineon Technologies IRG4RC10KDPBF
                                        Mfr. Тип
                                        IRG4RC10KDPBF
                                        Anlielectronics Тип

                                        		Infineon Technologies
                                        IGBT 600V 9A 38W DPAK
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 - - - Surface Mount Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - 3 D-Pak - - - - 600V 2.62V - - 9A - - - - - - - - - - - - 480V, 5A, 100Ohm, 15V - - - -55°C~150°C TJ Tube 2004 - - - Obsolete 1 (Unlimited) - - - - 150°C -55°C - - 600V 38W - - - - 9A - IRG4RC10KDPBF - - - - Single 38W - Standard - 38W - - - - - 2.62V 9A - 28 ns - 600V - - 2.62V @ 15V, 5A - - - 19nC 18A 49ns/97ns 250μJ (on), 140μJ (off) - - - 2.39mm 6.73mm 6.22mm No - RoHS Compliant -
                                          IRG4RC10KDPBF
                                          IRG4RC10KDPBF

                                          Infineon Technologies
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

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