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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Number of Terminals Transistor Element Material Base Product Number Brand Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Continuous Collector Current Ic Max Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Gate-Emitter Leakage Current Ihs Manufacturer Manufacturer Manufacturer Part Number Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Styles Number of Elements Operating Temperature-Max Operating Temperature-Min Package Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Pd - Power Dissipation Product Status Risk Rank RoHS SwitchingFrequency Test Conditions Turn-off Time-Nom (toff) Turn-on Time-Nom (ton) Unit Weight Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature Subcategory Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Qualification Status Configuration Element Configuration Power Dissipation Case Connection Input Type Power - Max Transistor Application Halogen Free Rise Time Polarity/Channel Type Product Type Collector Emitter Voltage (VCEO) Max Collector Current Reverse Recovery Time JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Turn On Time Vce(on) (Max) @ Vge, Ic Collector Current-Max (IC) Continuous Collector Current Turn Off Time-Nom (toff) IGBT Type Collector-Emitter Voltage-Max Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Reverse Recovery Time (trr) Product Category Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
Microchip Technology APT75GN60BDQ2G
Mfr. Тип
APT75GN60BDQ2G
Anlielectronics Тип

Microchip Technology
IGBT FIELDSTOP SINGLE 600V 75A T
Сборник данных Сравнение
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    		 - - - Through Hole TO-247-3 - - TO-247-3 - - - APT75GN60 Microchip Technology / Atmel 600 V - - 155 A - 155 A 1 - - Microchip - - 20 V, + 20 V + 175 C Microchip Technology - 55 C Through Hole - - - Tube - - - - - 536 W Active - Details - 400V, 75A, 1Ohm, 15V - - - -55°C ~ 175°C (TJ) Tube - - - - - - - - - - - - - IGBTs - - - - - - - - - - - - - Single - - - Standard 536 W - - - - IGBT Transistors - - - - 600 V - 1.85V @ 15V, 75A - - - Trench Field Stop - 485 nC 225 A 47ns/385ns 2.5mJ (on), 2.14mJ (off) - - 25 ns IGBT Transistors - - - - - - -
    APT75GN60BDQ2G
    APT75GN60BDQ2G

    Microchip Technology
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    IXYS IXBH42N170A
    Mfr. Тип
    IXBH42N170A
    Anlielectronics Тип

    		IXYS
    Trans IGBT Chip N-CH 1.7KV 42A 3-Pin(3 Tab) TO-247AD
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 30 Weeks - Through Hole Through Hole TO-247-3 - 3 - 6.500007g - SILICON - - - 1.7kV 5.2V - - - - - - - - - - - - - 1 - - - - - - - - - - - - - 850V, 21A, 1 Ω, 15V - - - -55°C~150°C TJ Tube 2010 BIMOSFET™ - yes Active 1 (Unlimited) 3 - - - - - - - - 357W - - NOT SPECIFIED - - NOT SPECIFIED IXB*42N170 3 - - Not Qualified - Single - COLLECTOR Standard 357W MOTOR CONTROL - - N-CHANNEL - 1.7kV 42A 330 ns TO-247AD 1700V 63 ns 6V @ 15V, 21A - - 420 ns - - 188nC 265A 19ns/200ns 3.43mJ (on), 430μJ (off) 20V 5.5V - - - - - - - ROHS3 Compliant -
      IXBH42N170A
      IXBH42N170A

      IXYS
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      ON Semiconductor FGH75T65UPD-F155
      Mfr. Тип
      FGH75T65UPD-F155
      Anlielectronics Тип

      		ON Semiconductor
      650V,75A FIELD STOP TRENCH IGBT
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 - ACTIVE, NOT REC (Last Updated: 1 week ago) - Through Hole TO-247-3 - - - - - - - - - - - - - 150A - - - - - - - - - - - - - - - - - - - - - - - - 400V, 75A, 3 Ω, 15V - - - -55°C~175°C TJ - - - - - Not For New Designs 1 (Unlimited) - - - - - - - - - - - - - - - - - - - - - - - - - Standard 375W - - - - - - - 85ns - 650V - 2.3V @ 15V, 75A - - - Trench Field Stop - 68nC 225A 42ns/216ns 3.68mJ (on), 1.6mJ (off) - - - - - - - - - ROHS3 Compliant -
        FGH75T65UPD-F155
        FGH75T65UPD-F155

        ON Semiconductor
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Infineon Technologies IKZ75N65NH5XKSA1
        Mfr. Тип
        IKZ75N65NH5XKSA1
        Anlielectronics Тип

        		Infineon Technologies
        IGBT 650V 75A CO-PACK TO-247-4
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 14 Weeks - Through Hole Through Hole TO-247-4 - 4 - - - SILICON - - - 650V - - - - - - - - - - - - - - 1 - - - - - - - - - - - - - 400V, 37.5A, 27 Ω, 15V - - - -40°C~175°C TJ Tube 2008 TrenchStop™ 5 e3 yes Obsolete 1 (Unlimited) 4 - EAR99 Tin (Sn) - - - - - 395W SINGLE - NOT SPECIFIED - - NOT SPECIFIED - - - - - SINGLE WITH BUILT-IN DIODE - - COLLECTOR Standard 395W POWER CONTROL Halogen Free - N-CHANNEL - 650V 90A 59 ns - - 71 ns 2.1V @ 15V, 75A - - 485 ns Trench - 166nC 300A 52ns/412ns 880μJ (on), 520μJ (off) - - - - - - - - - ROHS3 Compliant Lead Free
          IKZ75N65NH5XKSA1
          IKZ75N65NH5XKSA1

          Infineon Technologies
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          STMicroelectronics STGW40V60DLF
          Mfr. Тип
          STGW40V60DLF
          Anlielectronics Тип

          		STMicroelectronics
          IGBT 600V 80A 283W TO247
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 20 Weeks - Through Hole Through Hole TO-247-3 - 3 - - - - - - - 600V 2.35V - - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 40A, 10 Ω, 15V - - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - - EAR99 - - - - - - 283W - - - - - - STGW40 - - - - - Single 283W - Standard - - - - N-CHANNEL - 600V 80A - - - - 2.3V @ 15V, 40A - - - Trench Field Stop - 226nC 160A -/208ns 411μJ (off) 20V - - - 20.15mm 15.75mm 5.15mm No - ROHS3 Compliant -
            STGW40V60DLF
            STGW40V60DLF

            STMicroelectronics
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            STMicroelectronics STGWT20H65FB
            Mfr. Тип
            STGWT20H65FB
            Anlielectronics Тип

            		STMicroelectronics
            Trans IGBT Chip N-CH 650V 40A 3-Pin TO-3P Tube
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 32 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Through Hole TO-3P-3, SC-65-3 - 3 - 6.756003g - - - - - 650V 1.55V - - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 20A, 10 Ω, 15V - - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - - EAR99 - - - - - - 168W - - NOT SPECIFIED - - NOT SPECIFIED STGWT20 - - - - - Single - - Standard 168W - - - N-CHANNEL - 650V 40A - - - - 2V @ 15V, 20A - - - Trench Field Stop - 120nC 80A 30ns/139ns 77μJ (on), 170μJ (off) 20V 7V - - - - - - - ROHS3 Compliant -
              STGWT20H65FB
              STGWT20H65FB

              STMicroelectronics
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              STMicroelectronics STGW50NC60W
              Mfr. Тип
              STGW50NC60W
              Anlielectronics Тип

              		STMicroelectronics
              Trans IGBT Chip N-CH 600V 100A 3-Pin(3 Tab) TO-247 Tube
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - - Through Hole Through Hole TO-247-3 - - - 38.000013g - SILICON - - - 600V - - - - - - - - - - - - - - 1 - - - - - - - - - - - - - 390V, 40A, 10 Ω, 15V - - - -55°C~150°C TJ Tube - PowerMESH™ e3 - Obsolete 1 (Unlimited) 3 - - Tin (Sn) - - - - - 285W - - - - - - STGW50 3 - R-PSFM-T3 - - Single - - Standard 285W POWER CONTROL - - N-CHANNEL - 600V 100A - - - 69 ns 2.6V @ 15V, 40A - - 343 ns - - 195nC - 52ns/240ns 365μJ (on), 560μJ (off) 20V 5.75V - - 20.15mm 15.75mm 5.15mm No - ROHS3 Compliant -
                STGW50NC60W
                STGW50NC60W

                STMicroelectronics
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Infineon Technologies IGW75N60H3FKSA1
                Mfr. Тип
                IGW75N60H3FKSA1
                Anlielectronics Тип

                		Infineon Technologies
                Trans IGBT Chip N-CH 600V 140A 3-Pin TO-247 Tube
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 16 Weeks - Through Hole Through Hole TO-247-3 - 3 - - - SILICON - - - - - - - - - - - - - - - - - - 1 - - - - - - - - - - - - - 400V, 75A, 5.2 Ω, 15V - - - -40°C~175°C TJ Tube 2008 TrenchStop® e3 yes Active 1 (Unlimited) 3 - EAR99 Tin (Sn) - - - - - - - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - Single - COLLECTOR Standard 428W POWER CONTROL - - N-CHANNEL - 600V 140A - - - - 2.3V @ 15V, 75A - - - Trench Field Stop - 470nC 225A 31ns/265ns 3mJ (on), 1.7mJ (off) - - - - - - - - - ROHS3 Compliant Lead Free
                  IGW75N60H3FKSA1
                  IGW75N60H3FKSA1

                  Infineon Technologies
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor NGTD21T65F2SWK
                  Mfr. Тип
                  NGTD21T65F2SWK
                  Anlielectronics Тип

                  		ON Semiconductor
                  IGBT TRENCH FIELD STOP 650V DIE
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 4 Weeks ACTIVE (Last Updated: 1 week ago) - Surface Mount Die - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -55°C~175°C TJ Tape & Reel (TR) 2016 - - yes Active - - - - - - - - - - - - - - - - - - - - - - - - - - Standard - - - - - - - - - - 650V - 1.9V @ 15V, 45A - - - Trench Field Stop - - 200A - - - - - - - - - - - ROHS3 Compliant Lead Free
                    NGTD21T65F2SWK
                    NGTD21T65F2SWK

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Infineon Technologies IKW75N60TAFKSA1
                    Mfr. Тип
                    IKW75N60TAFKSA1
                    Anlielectronics Тип

                    		Infineon Technologies
                    IGBT Transistors 600V 75A 100nA
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 14 Weeks - - Through Hole TO-247-3 NO - - - - SILICON - - - - - - - 80A - - - - - - - - - - 1 - - - - - - - - - - - - - 400V, 75A, 5 Ω, 15V - - - -40°C~175°C TJ Tube 2014 TrenchStop® - yes Last Time Buy 1 (Unlimited) 3 - - - - - - - - - SINGLE - NOT SPECIFIED - - NOT SPECIFIED - - AEC-Q101 R-PSFM-T3 - SINGLE WITH BUILT-IN DIODE - - COLLECTOR Standard 428W POWER CONTROL - - N-CHANNEL - 600V - 121ns - - 69 ns 2V @ 15V, 75A - - 401 ns Trench Field Stop - 470nC 225A 33ns/330ns 4.5mJ - - - - - - - - - ROHS3 Compliant Lead Free
                      IKW75N60TAFKSA1
                      IKW75N60TAFKSA1

                      Infineon Technologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Infineon Technologies SKW07N120FKSA1
                      Mfr. Тип
                      SKW07N120FKSA1
                      Anlielectronics Тип

                      		Infineon Technologies
                      IGBT 1200V 16.5A 125W TO247
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - - - Through Hole TO-247-3 NO - - - - SILICON - - - - - - - 16.5A - - - - - - - - - - 1 - - - - - - - - - - - - - 800V, 8A, 47 Ω, 15V - - - -55°C~150°C TJ Tube 2008 - - yes Obsolete 1 (Unlimited) 3 - EAR99 - - - LOW CONDUCTION LOSS - - - SINGLE - NOT SPECIFIED compliant - NOT SPECIFIED - 3 - R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE - - COLLECTOR Standard 125W POWER CONTROL - - N-CHANNEL - - - 60ns TO-247AC 1200V 56 ns 3.6V @ 15V, 8A - - 520 ns NPT - 70nC 27A 27ns/440ns 1mJ - - - - - - - - - RoHS Compliant -
                        SKW07N120FKSA1
                        SKW07N120FKSA1

                        Infineon Technologies
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        STMicroelectronics STGP5H60DF
                        Mfr. Тип
                        STGP5H60DF
                        Anlielectronics Тип

                        		STMicroelectronics
                        TRENCH GATE FIELD-STOP IGBT, H S
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 20 Weeks ACTIVE (Last Updated: 8 months ago) Through Hole Through Hole TO-220-3 - - - - - - - - - 600V - - - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 5A, 47 Ω, 15V - - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - - EAR99 - - - - - - 88W - - NOT SPECIFIED - - NOT SPECIFIED STGP5 - - - - - - - - Standard 88W - - - - - 1.95V 10A 134.5 ns - - - 1.95V @ 15V, 5A - - - Trench Field Stop - 43nC 20A 30ns/140ns 56μJ (on), 78.5μJ (off) - - - - - - - - - ROHS3 Compliant -
                          STGP5H60DF
                          STGP5H60DF

                          STMicroelectronics
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Infineon Technologies IGW30N60TPXKSA1
                          Mfr. Тип
                          IGW30N60TPXKSA1
                          Anlielectronics Тип

                          		Infineon Technologies
                          IGBT 600V 53A 200W TO247
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 16 Weeks - Through Hole Through Hole TO-247-3 - - - - - SILICON - - - 600V - - - - - - - - - - - - - - 1 - - - - - - - - - - - - - 400V, 30A, 10.5 Ω, 15V - - - -40°C~175°C TJ Tube 2006 TrenchStop™ e3 yes Active Not Applicable 3 - EAR99 Tin (Sn) - - - - - 200W SINGLE - NOT SPECIFIED - - NOT SPECIFIED - - - R-PSFM-T3 - SINGLE - - - Standard 200W POWER CONTROL - - N-CHANNEL - 1.8V 53A - - - 38 ns 1.8V @ 15V, 30A - - 279 ns Trench Field Stop - 130nC 90A 15ns/179ns 710μJ (on), 420μJ (off) - - - - - - - - - ROHS3 Compliant -
                            IGW30N60TPXKSA1
                            IGW30N60TPXKSA1

                            Infineon Technologies
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Alpha & Omega Semiconductor Inc. AOK20B60D1
                            Mfr. Тип
                            AOK20B60D1
                            Anlielectronics Тип

                            		Alpha & Omega Semiconductor Inc.
                            Trans IGBT Chip N-CH 600V 40A 3-Pin(3 Tab) TO-247 Tube
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 18 Weeks - Through Hole Through Hole TO-247-3 - 3 - - - - - - - 600V - - - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 20A, 15 Ω, 15V - - - -55°C~175°C TJ Tube 2011 Alpha IGBT™ - - Active 1 (Unlimited) - - - - - - - - - 167W - - - - - - - - - - - - Single - - Standard 167W - - - N-CHANNEL - 2.4V 40A 107 ns - - - 2.4V @ 15V, 20A - - - - - 24.6nC 74A 20ns/66ns 760μJ (on), 180μJ (off) 20V - - - - - - - - ROHS3 Compliant -
                              AOK20B60D1
                              AOK20B60D1

                              Alpha & Omega Semiconductor Inc.
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Infineon Technologies IRG4BC20MD-SPBF
                              Mfr. Тип
                              IRG4BC20MD-SPBF
                              Anlielectronics Тип

                              		Infineon Technologies
                              IGBT 600V 18A 60W D2PAK
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 - - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - 3 D2PAK - - - - - - 600V 2.1V - - 18A - - - - - - - - - - - - - - - - - - - - - - - - 480V, 11A, 50Ohm, 15V - - - -55°C~150°C TJ Tube 2010 - - - Obsolete 1 (Unlimited) - SMD/SMT - - 150°C -55°C - - 600V 60W - - - - 18A - - - - - - - Single 60W - Standard 60W - - 41ns - - 2.1V 18A 37ns - 600V - 2.1V @ 15V, 11A - - - - - 39nC 36A 21ns/463ns 410μJ (on), 2.03mJ (off) - - - - - - - No No SVHC RoHS Compliant Lead Free
                                IRG4BC20MD-SPBF
                                IRG4BC20MD-SPBF

                                Infineon Technologies
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Microchip Technology APT95GR65B2
                                Mfr. Тип
                                APT95GR65B2
                                Anlielectronics Тип

                                		Microchip Technology
                                IGBT Transistors FG, IGBT, 650V, 95A, TO-247 T-MAXView in Development Tools Selector
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - - Through Hole TO-247-3 NO - T-MAX™ [B2] - 3 SILICON APT95GR65 - 650 V - 2.6 V 208 A 208 A 208 A 1 +/- 250 nA MICROCHIP TECHNOLOGY INC - APT95GR65B2 - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole 1 175 °C -55 °C Tube PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Active 892 W Active 5.72 Details - 433V, 95A, 4.3Ohm, 15V 336 ns 105 ns 0.211644 oz -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - - - - SINGLE THROUGH-HOLE - unknown - - - - - R-PSFM-T3 - Single - 892 COLLECTOR Standard 892 W MOTOR CONTROL - - N-CHANNEL - - - - TO-247 650 V - 2.4V @ 15V, 95A 208 A 208 - NPT 650 V 420 nC 400 A 29ns/226ns 3.12mJ (on), 2.55mJ (off) - - - - - - - - - - -
                                  APT95GR65B2
                                  APT95GR65B2

                                  Microchip Technology
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Infineon Technologies IRGB4615DPBF
                                  Mfr. Тип
                                  IRGB4615DPBF
                                  Anlielectronics Тип

                                  		Infineon Technologies
                                  IGBT 600V 23A 99W TO220
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - - Through Hole Through Hole TO-220-3 - 3 - 2.299997g - - - - - 600V 1.55V - - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 8A, 47 Ω, 15V - - - -40°C~175°C TJ Tube 2001 - - - Obsolete 1 (Unlimited) - - EAR99 - - - - - - 99W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - Single - - Standard 99W - - - N-CHANNEL - 1.85V 23A 60 ns - - - 1.85V @ 15V, 8A - - - - - 19nC 24A 30ns/95ns 70μJ (on), 145μJ (off) 20V 6.5V - - 16.51mm 10.67mm 4.83mm - No SVHC RoHS Compliant -
                                    IRGB4615DPBF
                                    IRGB4615DPBF

                                    Infineon Technologies
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Infineon Technologies IHW30N90R
                                    Mfr. Тип
                                    IHW30N90R
                                    Anlielectronics Тип

                                    		Infineon Technologies
                                    IGBT 900V 60A 454W TO247-3
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - - - Through Hole TO-247-3 NO 3 - - - SILICON - - - 900V 1.7V - - - - - - - - - - - - - 1 - - - - - - - - - - - - - 600V, 30A, 15 Ω, 15V - - - -40°C~175°C TJ Tube 2008 - e3 - Obsolete 1 (Unlimited) 3 - EAR99 TIN - - - - - 454W - - - - - - - 3 - - - - Single 454W COLLECTOR Standard - - Not Halogen Free - N-CHANNEL - 900V 60A - TO-247AC - - 1.7V @ 15V, 30A - - 640 ns Trench Field Stop - 200nC 90A -/511ns 1.46mJ 20V 6.4V - - - - - No - RoHS Compliant Lead Free
                                      IHW30N90R
                                      IHW30N90R

                                      Infineon Technologies
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Infineon Technologies IGW30N65L5XKSA1
                                      Mfr. Тип
                                      IGW30N65L5XKSA1
                                      Anlielectronics Тип

                                      		Infineon Technologies
                                      Trans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 16 Weeks - Through Hole Through Hole TO-247-3 - 3 - - - SILICON - - - 650V - - - - - - - - - - - - - - 1 - - - - - - - - - - - - 50Hz 400V, 30A, 10 Ω, 15V - - - -40°C~175°C TJ Tube 2013 TrenchStop™ 5 - yes Active 1 (Unlimited) 3 - EAR99 - - - - - - 227W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - Single - - Standard 227W POWER CONTROL Halogen Free - N-CHANNEL - 650V 85A - - - 44 ns 1.35V @ 15V, 30A - - 520 ns - - 168nC 120A 33ns/308ns 470μJ (on), 1.35mJ (off) - - - - - - - - - ROHS3 Compliant Lead Free
                                        IGW30N65L5XKSA1
                                        IGW30N65L5XKSA1

                                        Infineon Technologies
                                        RoHS :
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                                        ON Semiconductor FGY100T65SCDT
                                        Mfr. Тип
                                        FGY100T65SCDT
                                        Anlielectronics Тип

                                        		ON Semiconductor
                                        FS3TIGBT TO247 100A 650V
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 6 Weeks ACTIVE (Last Updated: 4 days ago) - Through Hole TO-247-3 - - - - - - - - - - - - - 200A - - - - - - - - - - - - - - - - - - - - - - - - 400V, 100A, 4.7 Ω, 15V - - - -55°C~175°C TJ Tube 2016 - e3 yes Active - - - - Tin (Sn) - - - - - - - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - - - Standard 750W - - - - - - - 62ns - 650V - 1.9V @ 15V, 100A - - - Trench Field Stop - 157nC 300A 84ns/216ns 5.4mJ (on), 3.8mJ (off) - - - - - - - - - RoHS Compliant -
                                          FGY100T65SCDT
                                          FGY100T65SCDT

                                          ON Semiconductor
                                          RoHS :
                                          Инкапсуляция : -
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