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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Number of Pins | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Number of Elements | Turn Off Delay Time | Operating Temperature | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Resistance | Terminal Finish | HTS Code | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Configuration | Number of Channels | Element Configuration | Operating Mode | Power Dissipation | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Continuous Drain Current (ID) | Threshold Voltage | Gate to Source Voltage (Vgs) | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | FET Feature | Drain to Source Resistance | Nominal Vgs | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипEM6K7T2RAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 20V 0.2A EMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | Surface Mount | Surface Mount | SOT-563, SOT-666 | 6 | SILICON | - | 2 | 15 ns | 150°C TJ | Digi-Reel® | 2009 | - | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | - | - | - | 150mW | - | FLAT | 260 | - | 10 | *K7 | 6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | 5 ns | - | 2 N-Channel (Dual) | SWITCHING | 1.2 Ω @ 200mA, 2.5V | 1V @ 1mA | 25pF @ 10V | - | 10ns | 20V | - | 10 ns | 200mA | - | 8V | 0.2A | 1.4Ohm | - | - | - | 20V | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| EM6K7T2R | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипUM6K31NTNAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 60V 0.25A UMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6 | SILICON | - | 2 | 18 ns | 150°C TJ | Tape & Reel (TR) | 2007 | - | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | - | - | - | 150mW | - | GULL WING | 260 | - | 10 | - | 6 | - | - | 2 | - | ENHANCEMENT MODE | - | 3.5 ns | - | 2 N-Channel (Dual) | SWITCHING | 2.4 Ω @ 250mA, 10V | 2.3V @ 1mA | 15pF @ 25V | - | 5ns | 60V | - | 28 ns | 250mA | - | 20V | - | - | 60V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 2.5V Drive | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| UM6K31NTN | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEM6M2T2RAnlielectronics Тип | ROHM Semiconductor |
MOSFET N/P-CH 20V 0.2A EMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | Surface Mount | Surface Mount | SOT-563, SOT-666 | 6 | SILICON | - | 2 | - | 150°C TJ | Tape & Reel (TR) | 2009 | - | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | - | - | - | 150mW | DUAL | FLAT | 260 | - | 10 | *M2 | 6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | 150mW | N and P-Channel | SWITCHING | 1 Ω @ 200mA, 4V | 1V @ 1mA | 25pF @ 10V | - | - | 20V | N-CHANNEL AND P-CHANNEL | - | 200mA | - | - | 0.2A | 1.4Ohm | - | - | - | 20V | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| EM6M2T2R | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEM6K6T2RAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 20V 0.3A EMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | Surface Mount | Surface Mount | SOT-563, SOT-666 | 6 | SILICON | - | 2 | 15 ns | 150°C TJ | Tape & Reel (TR) | 2007 | e2 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | TIN COPPER | - | - | 150mW | - | FLAT | 260 | - | 10 | *K6 | 6 | - | - | - | Dual | ENHANCEMENT MODE | 150mW | 5 ns | - | 2 N-Channel (Dual) | SWITCHING | 1 Ω @ 300mA, 4V | 1V @ 1mA | 25pF @ 10V | - | 10ns | 20V | - | 10 ns | 300mA | - | 8V | 0.3A | 1.4Ohm | 20V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| EM6K6T2R | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипUS6M11TRAnlielectronics Тип | ROHM Semiconductor |
MOSFET N/P-CH 20V/12V TUMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | Surface Mount | Surface Mount | 6-SMD, Flat Leads | 6 | SILICON | 1.5A 1.3A | 2 | 30 ns | 150°C TJ | Tape & Reel (TR) | 2016 | e2 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | 600MOhm | TIN COPPER | - | - | 1W | DUAL | - | 260 | - | 10 | *M11 | 6 | - | - | 2 | - | ENHANCEMENT MODE | - | 8 ns | - | N and P-Channel | SWITCHING | 180m Ω @ 1.5A, 4.5V | 1V @ 1mA | 110pF @ 10V | 1.8nC @ 4.5V | 10ns | 20V 12V | N-CHANNEL AND P-CHANNEL | 9 ns | 1.3A | - | 10V | 1.5A | - | -12V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| US6M11TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипQS6J1TRAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2P-CH 20V 1.5A TSMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 5 | SILICON | - | 2 | 45 ns | 150°C TJ | Tape & Reel (TR) | 2003 | e1 | yes | Not For New Designs | 1 (Unlimited) | 6 | - | EAR99 | 340MOhm | - | - | -20V | 1.25W | - | GULL WING | 260 | -1.5A | 10 | *J1 | 6 | R-PDSO-G6 | - | - | Dual | ENHANCEMENT MODE | 1.25W | 10 ns | - | 2 P-Channel (Dual) | SWITCHING | 215m Ω @ 1.5A, 4.5V | 2V @ 1mA | 270pF @ 10V | 3nC @ 4.5V | 12ns | 20V | - | 12 ns | 1.5A | -2V | 12V | - | - | -20V | 6A | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| QS6J1TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEM6K1T2RAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 30V .1A EMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | SOT-563, SOT-666 | 6 | SILICON | - | 2 | 80 ns | 150°C TJ | Tape & Reel (TR) | 2006 | e2 | yes | Not For New Designs | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 13Ohm | TIN COPPER | - | 30V | 150mW | - | FLAT | 260 | 100mA | 10 | *K1 | 6 | - | - | - | Dual | ENHANCEMENT MODE | 150mW | 15 ns | - | 2 N-Channel (Dual) | SWITCHING | 8 Ω @ 10mA, 4V | 1.5V @ 100μA | 13pF @ 5V | - | 35ns | - | - | 35 ns | 100mA | - | 20V | 0.1A | - | 30V | - | 30V | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | 1.5 V | 500μm | 1.6mm | 1.2mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| EM6K1T2R | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип2SK3018FPDT106Anlielectronics Тип | ROHM Semicon |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 2SK3018FPDT106 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипVT6K1T2CRAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 20V 0.1A VMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | Surface Mount | Surface Mount | 6-SMD, Flat Leads | 6 | SILICON | - | 2 | 20 ns | 150°C TJ | Cut Tape (CT) | 2011 | e1 | - | Active | 1 (Unlimited) | 6 | - | EAR99 | - | TIN SILVER COPPER | - | - | 120mW | - | - | 260 | - | 10 | - | 6 | - | - | 2 | - | ENHANCEMENT MODE | - | 5 ns | - | 2 N-Channel (Dual) | SWITCHING | 3.5 Ω @ 100mA, 4.5V | 1V @ 100μA | 7.1pF @ 10V | - | 4ns | 20V | - | 38 ns | 100mA | - | 8V | 0.1A | - | 20V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 1.2V Drive | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| VT6K1T2CR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипQS8M51TRAnlielectronics Тип | ROHM Semiconductor |
MOSFET N/P-CH 100V 2A/1.5A TSMT8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | Surface Mount | Surface Mount | 8-SMD, Flat Lead | 8 | SILICON | 2A 1.5A | 2 | - | 150°C TJ | Tape & Reel (TR) | 2015 | - | - | Active | 1 (Unlimited) | 8 | - | EAR99 | - | - | - | - | 1.5W | DUAL | - | - | - | - | *M51 | 8 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | 10 ns | - | N and P-Channel | SWITCHING | 325m Ω @ 2A, 10V | 2.5V @ 1mA | 290pF @ 25V | 4.7nC @ 5V | - | 100V | N-CHANNEL AND P-CHANNEL | - | 1.5A | - | 20V | 2A | 0.355Ohm | - | 6A | - | 100V | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| QS8M51TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипQS5K2TRAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 30V 2A TSMT5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | Surface Mount | Surface Mount | SOT-23-5 Thin, TSOT-23-5 | 5 | SILICON | - | 2 | 21 ns | 150°C TJ | Tape & Reel (TR) | 2006 | e1 | yes | Active | 1 (Unlimited) | 5 | - | EAR99 | 100MOhm | TIN SILVER COPPER | - | 30V | 1.25W | - | GULL WING | 260 | 2A | 10 | *K2 | 5 | - | - | - | Dual | ENHANCEMENT MODE | 1.25W | 8 ns | - | 2 N-Channel (Dual) Common Source | SWITCHING | 100m Ω @ 2A, 4.5V | 1.5V @ 1mA | 175pF @ 10V | 3.9nC @ 4.5V | 10ns | - | - | 10 ns | 2A | 1.5V | 12V | 2A | - | 30V | 8A | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | 1.5 V | 850μm | 2.9mm | 1.6mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| QS5K2TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипQS6M3TRAnlielectronics Тип | ROHM Semiconductor |
MOSFET N/P-CH 30V/20V 1.5A TSMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 25 Weeks | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | - | 2 | 45 ns | 150°C TJ | Tape & Reel (TR) | 2006 | e1 | yes | Not For New Designs | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 360MOhm | - | - | - | 900mW | - | GULL WING | 260 | 1.5A | 10 | *M3 | 6 | - | - | - | Dual | ENHANCEMENT MODE | 1.25W | - | - | N and P-Channel | SWITCHING | 230m Ω @ 1.5A, 4.5V | 1.5V @ 1mA | 80pF @ 10V | 1.6nC @ 4.5V | 12ns | 30V 20V | N-CHANNEL AND P-CHANNEL | 12 ns | 1.5A | 1.5V | 12V | - | - | -20V | - | 30V | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | 1.5 V | - | - | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| QS6M3TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипQS6K1TRAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 30V 1A TSMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | - | 2 | 15 ns | 150°C TJ | Tape & Reel (TR) | 2006 | e1 | yes | Active | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 364MOhm | - | - | 30V | 900mW | - | GULL WING | 260 | 1A | 10 | *K1 | 6 | - | - | - | Dual | ENHANCEMENT MODE | 1.25W | 7 ns | - | 2 N-Channel (Dual) | SWITCHING | 238m Ω @ 1A, 4.5V | 1.5V @ 1mA | 77pF @ 10V | 2.4nC @ 4.5V | 7ns | - | - | 7 ns | 1A | 1.5V | 12V | 1A | - | 30V | - | 30V | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | 1.5 V | - | - | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| QS6K1TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипQS6M4TRAnlielectronics Тип | ROHM Semiconductor |
MOSFET N/P-CH 30V/20V 1.5A TSMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | - | 2 | 45 ns | 150°C TJ | Tape & Reel (TR) | 2006 | e1 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | - | 8541.29.00.95 | - | 1.25W | - | GULL WING | 260 | 1.5A | 10 | *M4 | 6 | - | - | - | Dual | ENHANCEMENT MODE | 1.25W | - | - | N and P-Channel | SWITCHING | 230m Ω @ 1.5A, 4.5V | 1.5V @ 1mA | 80pF @ 10V | 1.6nC @ 4.5V | 12ns | 30V 20V | N-CHANNEL AND P-CHANNEL | 12 ns | 1.5A | 1.5V | 12V | - | 0.245Ohm | -20V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| QS6M4TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипQH8MA4TCRAnlielectronics Тип | ROHM Semiconductor |
MOSFET N/P-CH 30V TSMT8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | Surface Mount | Surface Mount | 8-SMD, Flat Lead | 2 | SILICON | 9A 8A | 2 | - | 150°C TJ | Cut Tape (CT) | 2015 | - | - | Active | 1 (Unlimited) | 8 | - | EAR99 | - | - | - | - | 1.5W | DUAL | - | NOT SPECIFIED | - | NOT SPECIFIED | - | - | R-PDSO-F8 | - | - | - | ENHANCEMENT MODE | - | - | - | N and P-Channel | SWITCHING | 16m Ω @ 9A, 10V | 2.5V @ 1mA | 640pF @ 15V | 15.5nC @ 10V | - | 30V | N-CHANNEL AND P-CHANNEL | - | 8A | - | - | - | 0.016Ohm | - | - | - | 30V | 3.5 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| QH8MA4TCR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEM6K34T2CRAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 50V 0.2A EMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | Surface Mount | Surface Mount | SOT-563, SOT-666 | - | - | - | - | - | 150°C TJ | Cut Tape (CT) | - | - | yes | Active | 1 (Unlimited) | - | - | - | - | - | - | - | 120mW | - | - | NOT SPECIFIED | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | 120mW | 2 N-Channel (Dual) | - | 2.2 Ω @ 200mA, 4.5V | 800mV @ 1mA | 26pF @ 10V | - | - | 50V | - | - | 200mA | - | - | - | - | - | - | - | - | - | - | Logic Level Gate, 0.9V Drive | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| EM6K34T2CR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипUM6J1NTNAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2P-CH 30V 0.2A UMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6 | SILICON | - | 2 | 30 ns | 150°C TJ | Tape & Reel (TR) | 2011 | e2 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | TIN COPPER | - | - | 150mW | - | GULL WING | 260 | - | 10 | *J1 | 6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | 8 ns | - | 2 P-Channel (Dual) | SWITCHING | 1.4 Ω @ 200mA, 10V | 2.5V @ 1mA | 30pF @ 10V | - | 5ns | 30V | - | 40 ns | 200mA | - | 20V | 0.2A | - | - | - | - | 30V | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| UM6J1NTN | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипUM6K1NTNAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 30V .1A SOT-363
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6 | SILICON | - | 2 | 80 ns | 150°C TJ | Tape & Reel (TR) | 2006 | - | yes | Not For New Designs | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 13Ohm | - | - | 30V | 150mW | - | GULL WING | 260 | 100mA | 10 | *K1 | 6 | - | - | 1 | Dual | ENHANCEMENT MODE | 150mW | 15 ns | - | 2 N-Channel (Dual) | SWITCHING | 8 Ω @ 10mA, 4V | 1.5V @ 100μA | 13pF @ 5V | - | 35ns | - | - | 35 ns | 100mA | 1.5V | 20V | - | - | 30V | - | 30V | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | 1.5 V | - | - | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| UM6K1NTN | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипQS8J4TRAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2P-CH 30V 4A TSMT8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | Surface Mount | Surface Mount | 8-SMD, Flat Lead | 8 | SILICON | - | 2 | 80 ns | 150°C TJ | Tape & Reel (TR) | 2012 | e2 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Tin/Copper (Sn/Cu) | - | - | 550mW | - | - | 260 | - | 10 | - | 8 | - | - | 2 | - | ENHANCEMENT MODE | - | 8 ns | - | 2 P-Channel (Dual) | SWITCHING | 56m Ω @ 4A, 10V | 2.5V @ 1mA | 800pF @ 10V | 13nC @ 10V | 20ns | 30V | - | 50 ns | 4A | - | 20V | 4A | 0.056Ohm | -30V | 16A | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| QS8J4TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипQS6K21TRAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 45V 1A TSMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | - | 2 | 16 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | e1 | yes | Not For New Designs | 1 (Unlimited) | 6 | - | EAR99 | - | - | - | - | 1.25W | - | GULL WING | - | - | - | *K21 | 6 | - | - | - | Dual | ENHANCEMENT MODE | 1.25W | 6 ns | - | 2 N-Channel (Dual) | SWITCHING | - | 1.5V @ 1mA | - | - | 8ns | 45V | - | 8 ns | 1A | - | 12V | 1A | - | 45V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Standard | 300mOhm | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| QS6K21TR |
Индекс :
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