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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Number of Terminals Transistor Element Material Base Product Number Brand Channel Mode Continuous Drain Current Continuous Drain Current Id Current - Continuous Drain (Id) @ 25℃ Drain Current-Max (ID) Drain-Source On-Volt Drive Voltage (Max Rds On, Min Rds On) Factory Pack QuantityFactory Pack Quantity Forward Transconductance - Min Gate-Source Voltage (Max) Id - Continuous Drain Current Ihs Manufacturer Manufacturer Manufacturer Part Number Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Mounting Styles MSL Number of Elements Number of Elements per Chip Operating Temp Range Operating Temperature Classification Operating Temperature-Max Package Body Material Package Description Package Shape Package Style Package Type Part # Aliases Part Life Cycle Code Part Package Code Pd - Power Dissipation Power Dissipation (Max) Product Status Qg - Gate Charge Qualification Rad Hardened Rds On - Drain-Source Resistance Reflow Temperature-Max (s) Risk Rank RoHS Rohs Code Tradename Transistor Polarity Turn Off Delay Time Typical Turn-Off Delay Time Typical Turn-On Delay Time Unit Weight Vds - Drain-Source Breakdown Voltage Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Type Terminal Finish HTS Code Subcategory Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Time@Peak Reflow Temperature-Max (s) Pin Count JESD-30 Code Qualification Status Polarity Configuration Number of Channels Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Vgs (Max) Polarity/Channel Type Product Type Transistor Type Continuous Drain Current (ID) JEDEC-95 Code Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) DS Breakdown Voltage-Min Channel Type Avalanche Energy Rating (Eas) FET Technology Power Dissipation-Max (Abs) FET Feature Power Dissipation Ambient-Max Product Category Height Length Width Radiation Hardening RoHS Status
Toshiba Semiconductor and Storage SSM3K329R,LF
Mfr. Тип
SSM3K329R,LF
Anlielectronics Тип

Toshiba Semiconductor and Storage
MOSFET N CH 30V 3.5A 2-3Z1A
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 16 Weeks Surface Mount Surface Mount SOT-23-3 Flat Leads - - - - SILICON - - - - - 3.5A Ta - - 1.8V 4V - - - - - - - - - - - - - 1 - - - - - - - - - - - - - 1W Ta - - - - - - - - - - - 6.4 ns - - - - - - 150°C TJ Tape & Reel (TR) 2007 U-MOSIII - - Active 1 (Unlimited) 3 - - - - - DUAL - NOT SPECIFIED unknown NOT SPECIFIED - R-PDSO-F3 - - SINGLE WITH BUILT-IN DIODE 1 - ENHANCEMENT MODE 1W - 9.2 ns N-Channel SWITCHING 126m Ω @ 1A, 4V 1V @ 1mA 123pF @ 15V 1.5nC @ 4V - - ±12V - - - 3.5A - 12V - - 30V - - - - - - - - - 880μm - - - RoHS Compliant
    SSM3K329R,LF
    SSM3K329R,LF

    Toshiba Semiconductor and Storage
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Toshiba 2SK2998
    Mfr. Тип
    2SK2998
    Anlielectronics Тип

    		Toshiba
    TRANSISTOR 500 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, LEAD FREE, 2-5J1C, TO-92MOD, 3 PIN, FET General Purpose Small Signal
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - - - - NO - - 3 SILICON - - - - - - 0.5 A - - - - - - TOSHIBA CORP Toshiba America Electronic Components 2SK2998 - - - - - - 1 - - - 150 °C PLASTIC/EPOXY CYLINDRICAL, O-PBCY-T3 ROUND CYLINDRICAL - - Lifetime Buy TO-92 - - - - - - - NOT SPECIFIED 5.39 - No - - - - - - - - - - - - - - No - - - EAR99 - - 8541.21.00.95 FET General Purpose Power BOTTOM THROUGH-HOLE NOT SPECIFIED unknown - 3 O-PBCY-T3 Not Qualified - SINGLE WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - - SWITCHING - - - - - - - N-CHANNEL - - - TO-92 - 0.5 A 18 Ω - - 500 V - - METAL-OXIDE SEMICONDUCTOR 0.9 W - - - - - - - -
      2SK2998
      2SK2998

      Toshiba
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Toshiba TPCF8104
      Mfr. Тип
      TPCF8104
      Anlielectronics Тип

      		Toshiba
      TRANSISTOR 6000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, 2-3U1A, 8 PIN, FET General Purpose Small Signal
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
        TPCF8104
        TPCF8104

        Toshiba
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Toshiba 2SK2965(F)
        Mfr. Тип
        2SK2965(F)
        Anlielectronics Тип

        		Toshiba
        2SK2965(F)
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - - - - - - - - - - - - - - - - - - - - - - TOSHIBA CORP Toshiba America Electronic Components 2SK2965(F) - - - - - - - - - - - - , - - - - Obsolete - - - - - - - - - 8.44 - - - - - - - - - - - - - - - - - - - - - - - - - - - - unknown - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
          2SK2965(F)
          2SK2965(F)

          Toshiba
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Toshiba TPN22006NH,LQ(S
          Mfr. Тип
          TPN22006NH,LQ(S
          Anlielectronics Тип

          		Toshiba
          -
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 - - - - - - - - - - - Enhancement 21(A) 21A - - 60(V) - - - ±20(V) - - - - - - - Surface Mount - - 1 - -55C to 150C Military - - - - - TSON EP ADVANCE - - - - - - - - No - - - - - - - - - - - - - - - Tape and Reel - - - - - - - - Power MOSFET - - - - - - - - 8 - - N - - - - 18(W) - - - - - - - - - - - - - - - - - - - - - - N Channel - - - - - - - - - - -
            TPN22006NH,LQ(S
            TPN22006NH,LQ(S

            Toshiba
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Toshiba 2SK2865(TE16L1,NQ)
            Mfr. Тип
            2SK2865(TE16L1,NQ)
            Anlielectronics Тип

            		Toshiba
            MOSFET N-CH 600V 2A SC-64
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - - - - NO - - 3 SILICON - - - - - - 2 A - - - - - - TOSHIBA CORP Toshiba America Electronic Components 2SK2865(TE16L1,NQ) - - - - - - 1 - - - - PLASTIC/EPOXY IN-LINE, R-PSIP-T3 RECTANGULAR IN-LINE - - Obsolete SC-64 - - - - - - - - 5.66 - - - - - - - - - - - - - - - - - - - - - - - - - SINGLE THROUGH-HOLE - unknown - 3 R-PSIP-T3 - - SINGLE WITH BUILT-IN DIODE - - ENHANCEMENT MODE - DRAIN - - SWITCHING - - - - - - - N-CHANNEL - - - - - - 5 Ω - 8 A 600 V - 93 mJ METAL-OXIDE SEMICONDUCTOR - - - - - - - - -
              2SK2865(TE16L1,NQ)
              2SK2865(TE16L1,NQ)

              Toshiba
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Toshiba Semiconductor and Storage SSM3J328R,LF
              Mfr. Тип
              SSM3J328R,LF
              Anlielectronics Тип

              		Toshiba Semiconductor and Storage
              Trans MOSFET P-CH 20V 6A 3-Pin SOT-23F
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 16 Weeks Surface Mount Surface Mount SOT-23-3 Flat Leads - 3 - - SILICON - - - - - 6A Ta - - 1.5V 4.5V - - - - - - - - - - - - - 1 - - - - - - - - - - - - - 1W Ta - - - - - - - - - - - 107 ns - - - - - - 150°C TJ Digi-Reel® 2009 U-MOSVI - - Active 1 (Unlimited) 3 - - - - - DUAL - - - - - - - - - 1 Single ENHANCEMENT MODE 2W - 32 ns P-Channel SWITCHING 29.8m Ω @ 3A, 4.5V 1V @ 1mA 840pF @ 10V 12.8nC @ 4.5V - 20V ±8V - - - 6A - 8V 6A 0.0298Ohm -20V 24A - - - - - - - - - - - No RoHS Compliant
                SSM3J328R,LF
                SSM3J328R,LF

                Toshiba Semiconductor and Storage
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Toshiba SSM3K7002BFS
                Mfr. Тип
                SSM3K7002BFS
                Anlielectronics Тип

                		Toshiba
                TRANSISTOR 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SSM, 2-2H1B, 3 PIN, FET General Purpose Small Signal
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                  SSM3K7002BFS
                  SSM3K7002BFS

                  Toshiba
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Toshiba TPC8109
                  Mfr. Тип
                  TPC8109
                  Anlielectronics Тип

                  		Toshiba
                  TRANSISTOR 10000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, 2-6J1B, 8 PIN, FET General Purpose Small Signal
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                    TPC8109
                    TPC8109

                    Toshiba
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Toshiba SSM6N15FE
                    Mfr. Тип
                    SSM6N15FE
                    Anlielectronics Тип

                    		Toshiba
                    TRANSISTOR 100 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-2N1D, 6 PIN, FET General Purpose Small Signal
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                      SSM6N15FE
                      SSM6N15FE

                      Toshiba
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Toshiba Semiconductor and Storage SSM3K16FV,L3F
                      Mfr. Тип
                      SSM3K16FV,L3F
                      Anlielectronics Тип

                      		Toshiba Semiconductor and Storage
                      PB-F VESM S-MOS (LF) TRANSISTOR
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - - Surface Mount SOT-723 - - VESM - - - Toshiba Enhancement - 0.1 100mA (Ta) - - 1.5V, 4V 8000 40 mS - 100 mA - Toshiba - + 150 C Toshiba Semiconductor and Storage - - SMD/SMT - - - - - - - - - - - - - - 150 mW 150mW (Ta) Active - - - 3 Ohms - - Details - MOSVI N-Channel - 125 ns 70 ns 0.000053 oz 20 V - 10 V, + 10 V 600 mV 150°C Cut Tape - - - - - - - - - - - MOSFETs - - - - - - - - - Single 1 Channel - - - - - N-Channel - 3Ohm @ 10mA, 4V 1.1V @ 100μA 9.3 pF @ 3 V - - 20 V ±10V - MOSFET - - - - - - - - - N - - - - - MOSFET - - - - -
                        SSM3K16FV,L3F
                        SSM3K16FV,L3F

                        Toshiba Semiconductor and Storage
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Toshiba TK160F10N1,LQ(O
                        Mfr. Тип
                        TK160F10N1,LQ(O
                        Anlielectronics Тип

                        		Toshiba
                        -
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                          TK160F10N1,LQ(O
                          TK160F10N1,LQ(O

                          Toshiba
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Toshiba 2SK2508
                          Mfr. Тип
                          2SK2508
                          Anlielectronics Тип

                          		Toshiba
                          TRANSISTOR 13 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, SC-67, 3 PIN, FET General Purpose Power
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - - - NO - - 3 SILICON - - - - - - 13 A - - - - - - TOSHIBA CORP Toshiba America Electronic Components 2SK2508 - - - - - - 1 - - - 150 °C PLASTIC/EPOXY LEAD FREE, SC-67, 3 PIN RECTANGULAR FLANGE MOUNT - - End Of Life SC-67 - - - - - - - NOT SPECIFIED 5.37 - No - - - - - - - - - - - - - - No - - - EAR99 - - - FET General Purpose Power SINGLE THROUGH-HOLE NOT SPECIFIED unknown - 3 R-PSFM-T3 Not Qualified - SINGLE WITH BUILT-IN DIODE - - ENHANCEMENT MODE - ISOLATED - - SWITCHING - - - - - - - N-CHANNEL - - - - - 13 A 0.25 Ω - 52 A 250 V - 148 mJ METAL-OXIDE SEMICONDUCTOR 45 W - 45 W - - - - - -
                            2SK2508
                            2SK2508

                            Toshiba
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Toshiba 2SJ305(F)
                            Mfr. Тип
                            2SJ305(F)
                            Anlielectronics Тип

                            		Toshiba
                            -
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - - Surface Mount - - - - - - - - Enhancement - - - - - - - - - - - - - +150 °C - -55 °C - - - - 1 - - - - - - - SOT-346 - - - - - - - - - - - - - - - - - - - - - - - - - - 2SJ - - - - - - - - - - - - - - - 3 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P - - - - - - 1.1mm 2.9mm 1.5mm - -
                              2SJ305(F)
                              2SJ305(F)

                              Toshiba
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Toshiba 2SK1489
                              Mfr. Тип
                              2SK1489
                              Anlielectronics Тип

                              		Toshiba
                              TRANSISTOR 12 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-21F1B, 3 PIN, FET General Purpose Power
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 18 Weeks - - - NO - - 3 SILICON - - - - - - 12 A - - - - - - TOSHIBA CORP Toshiba America Electronic Components 2SK1489 - - - - - - 1 - - - - PLASTIC/EPOXY 2-21F1B, 3 PIN RECTANGULAR FLANGE MOUNT - - Obsolete - - - - - - - - NOT SPECIFIED 5.8 - No - - - - - - - - - - - - - - - - - - - - - - - SINGLE THROUGH-HOLE 240 unknown - 3 R-PSFM-T3 Not Qualified - SINGLE - - ENHANCEMENT MODE - DRAIN - - SWITCHING - - - - - - - N-CHANNEL - - - - - - 1 Ω - 36 A 1000 V - - METAL-OXIDE SEMICONDUCTOR - - 200 W - - - - - -
                                2SK1489
                                2SK1489

                                Toshiba
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Toshiba TPCA8053-H
                                Mfr. Тип
                                TPCA8053-H
                                Anlielectronics Тип

                                		Toshiba
                                TRANSISTOR 15 A, 60 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-5Q1A, 8 PIN, FET General Purpose Power
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                                  TPCA8053-H
                                  TPCA8053-H

                                  Toshiba
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Toshiba 2SJ377
                                  Mfr. Тип
                                  2SJ377
                                  Anlielectronics Тип

                                  		Toshiba
                                  TRANSISTOR 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-7J1B, 3 PIN, FET General Purpose Power
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - - - - YES - - 2 SILICON - - - - - - 5 A - - - - - - TOSHIBA CORP Toshiba America Electronic Components 2SJ377 - - - - - - 1 - - - 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PSSO-G2 RECTANGULAR SMALL OUTLINE - - End Of Life SC-64 - - - - - - - NOT SPECIFIED 6.48 - No - - - - - - - - - - - - - e0 - - - - EAR99 - Tin/Lead (Sn/Pb) - Other Transistors SINGLE GULL WING NOT SPECIFIED unknown - 3 R-PSSO-G2 - - SINGLE WITH BUILT-IN DIODE - - ENHANCEMENT MODE - DRAIN - - SWITCHING - - - - - - - P-CHANNEL - - - - - 5 A 0.28 Ω - 20 A 60 V - 273 mJ METAL-OXIDE SEMICONDUCTOR 20 W - - - - - - - -
                                    2SJ377
                                    2SJ377

                                    Toshiba
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Toshiba SSM3K15AMFV,L3F(T
                                    Mfr. Тип
                                    SSM3K15AMFV,L3F(T
                                    Anlielectronics Тип

                                    		Toshiba
                                    100mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                                      SSM3K15AMFV,L3F(T
                                      SSM3K15AMFV,L3F(T

                                      Toshiba
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Toshiba Semiconductor and Storage TJ8S06M3L,LXHQ
                                      Mfr. Тип
                                      TJ8S06M3L,LXHQ
                                      Anlielectronics Тип

                                      		Toshiba Semiconductor and Storage
                                      MOSFET P-CH 60V 8A DPAK
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - - DPAK+ - - TJ8S06 Toshiba Enhancement - - 8A (Ta) - - 6V, 10V 2000 - - 8 A - Toshiba - + 175 C Toshiba Semiconductor and Storage - - SMD/SMT - - - - - - - - - - - TJ8S06M3L,LXHQ(O - - 27 W 27W (Tc) Active 19 nC AEC-Q101 - 104 mOhms - - Details - - P-Channel - 140 ns 14 ns 0.012699 oz 60 V - 20 V, + 10 V 3 V 175°C Cut Tape - U-MOSVI - - - - - - - - - MOSFETs - - - - - - - - - - 1 Channel - - - - - P-Channel - 104mOhm @ 4A, 10V 3V @ 1mA 890 pF @ 10 V 19 nC @ 10 V 6 ns 60 V +10V, -20V - MOSFET 1 P-Channel - - - - - - - - - - - - - - MOSFET - - - - -
                                        TJ8S06M3L,LXHQ
                                        TJ8S06M3L,LXHQ

                                        Toshiba Semiconductor and Storage
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Toshiba TK16V60W,LVQ(S
                                        Mfr. Тип
                                        TK16V60W,LVQ(S
                                        Anlielectronics Тип

                                        		Toshiba
                                        -
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
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                                          TK16V60W,LVQ(S
                                          TK16V60W,LVQ(S

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                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Single definition: The field-effect transistor (FET) is a type of transistor which uses an electric field to control the flow of current. FETs are also known a... Transistors - FETs, MOSFETs - Single Product Listing: SSM3K329R,LF,2SK2998,TPCF8104,2SK2965(F),TPN22006NH,LQ(S.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Single has 2235 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.