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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Number of Pins | Weight | Transistor Element Material | Collector-Emitter Breakdown Voltage | Number of Elements | Test Conditions | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Additional Feature | Voltage - Rated DC | Max Power Dissipation | Peak Reflow Temperature (Cel) | Current Rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Element Configuration | Case Connection | Input Type | Turn On Delay Time | Power - Max | Transistor Application | Polarity/Channel Type | Collector Emitter Voltage (VCEO) | Max Collector Current | Reverse Recovery Time | JEDEC-95 Code | Voltage - Collector Emitter Breakdown (Max) | Turn On Time | Vce(on) (Max) @ Vge, Ic | Continuous Collector Current | Turn Off Time-Nom (toff) | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Height | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипAPT25GT120BRDQ2GAnlielectronics Тип | Microsemi Corporation |
IGBT 1200V 54A 347W TO247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 29 Weeks | - | Through Hole | Through Hole | TO-247-3 | - | 38.000013g | SILICON | 1.2kV | 1 | 800V, 25A, 5 Ω, 15V | - | -55°C~150°C TJ | Tube | 1999 | Thunderbolt IGBT® | e1 | yes | Active | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | 1.2kV | 347W | - | 54A | - | 3 | R-PSFM-T3 | - | Single | COLLECTOR | Standard | - | - | POWER CONTROL | N-CHANNEL | 1.2kV | 54A | - | - | 1200V | 41 ns | 3.7V @ 15V, 25A | 54A | 186 ns | NPT | 170nC | 75A | 14ns/150ns | 930μJ (on), 720μJ (off) | 30V | 6.5V | 5.31mm | 21.46mm | 16.26mm | No | RoHS Compliant | Lead Free | ||
| APT25GT120BRDQ2G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAPT75GP120B2GAnlielectronics Тип | Microsemi Corporation |
IGBT 1200V 100A 1042W TMAX
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 23 Weeks | - | Through Hole | Through Hole | TO-247-3 Variant | 3 | - | SILICON | 1.2kV | 1 | 600V, 75A, 5 Ω, 15V | - | -55°C~150°C TJ | Tube | 1999 | POWER MOS 7® | e1 | yes | Active | 1 (Unlimited) | 3 | - | TIN SILVER COPPER | ULTRA FAST, LOW CONDUCTION LOSS | 1.2kV | 1.042kW | - | 100A | - | 3 | - | - | Single | COLLECTOR | Standard | - | 1042W | POWER CONTROL | N-CHANNEL | 1.2kV | 100A | - | - | 1200V | 60 ns | 3.9V @ 15V, 75A | 100A | 359 ns | PT | 320nC | 300A | 20ns/163ns | 1620μJ (on), 2500μJ (off) | - | - | 5.31mm | 21.46mm | 16.26mm | No | RoHS Compliant | Lead Free | ||
| APT75GP120B2G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT25GP120BDQ1GAnlielectronics Тип | Microsemi Corporation |
IGBT 1200V 69A 417W TO247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 32 Weeks | - | Through Hole | Through Hole | TO-247-3 | - | 38.000013g | SILICON | 1.2kV | 1 | 600V, 25A, 5 Ω, 15V | - | -55°C~150°C TJ | Tube | 1999 | POWER MOS 7® | e1 | yes | Active | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | LOW CONDUCTION LOSS | 1.2kV | 417W | - | 69A | - | 3 | R-PSFM-T3 | - | Single | COLLECTOR | Standard | - | - | POWER CONTROL | N-CHANNEL | 1.2kV | 69A | - | - | 1200V | 26 ns | 3.9V @ 15V, 25A | 69A | 200 ns | PT | 110nC | 90A | 12ns/70ns | 500μJ (on), 440μJ (off) | 30V | 6V | 5.31mm | 21.46mm | 16.26mm | No | RoHS Compliant | Lead Free | ||
| APT25GP120BDQ1G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT20GT60BRGAnlielectronics Тип | Microsemi Corporation |
IGBT 600V 43A 174W TO247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 22 Weeks | - | Through Hole | Through Hole | TO-247-3 | - | - | SILICON | 600V | 1 | 400V, 20A, 5 Ω, 15V | - | -55°C~150°C TJ | Tube | 1999 | Thunderbolt IGBT® | e1 | yes | Active | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | 600V | 174W | - | 43A | - | 3 | R-PSFM-T3 | - | Single | COLLECTOR | Standard | - | - | POWER CONTROL | N-CHANNEL | 600V | 43A | - | TO-247AD | - | 17 ns | 2.5V @ 15V, 20A | - | 160 ns | NPT | 100nC | 80A | 8ns/80ns | 215μJ (on), 245μJ (off) | 30V | 5V | - | - | - | No | RoHS Compliant | Lead Free | ||
| APT20GT60BRG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAPT75GN60LDQ3GAnlielectronics Тип | Microsemi Corporation |
Trans IGBT Chip N-CH 600V 155A 3-Pin(3+Tab) TO-264
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 25 Weeks | - | Through Hole | Through Hole | TO-264-3, TO-264AA | - | 10.6g | SILICON | 600V | 1 | 400V, 75A, 1 Ω, 15V | 385 ns | -55°C~175°C TJ | Tube | 1999 | - | e1 | yes | Active | 1 (Unlimited) | 3 | - | TIN SILVER COPPER | HIGH RELIABILITY | - | 536W | - | - | - | 3 | R-PSFM-T3 | - | Single | COLLECTOR | Standard | 47 ns | - | POWER CONTROL | N-CHANNEL | 600V | 155A | - | - | - | 95 ns | 1.85V @ 15V, 75A | 155A | 485 ns | Trench Field Stop | 485nC | 225A | 47ns/385ns | 2500μJ (on), 2140μJ (off) | 30V | 6.5V | 5.21mm | 26.49mm | 20.5mm | No | RoHS Compliant | Lead Free | ||
| APT75GN60LDQ3G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT40GT60BRGAnlielectronics Тип | Microsemi Corporation |
Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 24 Weeks | - | Through Hole | Through Hole | TO-247-3 | - | 38.000013g | SILICON | 600V | 1 | 400V, 40A, 5 Ω, 15V | - | -55°C~150°C TJ | Tube | 1999 | Thunderbolt IGBT® | e1 | yes | Active | 1 (Unlimited) | 3 | EAR99 | TIN SILVER COPPER | AVALANCHE RATED | 600V | 345W | - | 80A | - | 3 | R-PSFM-T3 | - | Single | COLLECTOR | Standard | - | - | POWER CONTROL | N-CHANNEL | 600V | 80A | - | - | - | 63 ns | 2.5V @ 15V, 40A | 80A | 353 ns | NPT | 200nC | 160A | 12ns/124ns | 828μJ (off) | - | - | 5.31mm | 21.46mm | 16.26mm | No | RoHS Compliant | Lead Free | ||
| APT40GT60BRG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT27GA90BD15Anlielectronics Тип | Microsemi Corporation |
IGBT 900V 48A 223W TO247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 33 Weeks | - | Through Hole | Through Hole | TO-247-3 | - | - | SILICON | 900V | 1 | 600V, 14A, 10 Ω, 15V | - | -55°C~150°C TJ | Tube | 1999 | - | e1 | yes | Active | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | 223W | - | - | - | 3 | R-PSFM-T3 | - | Single | COLLECTOR | Standard | - | 223W | POWER CONTROL | N-CHANNEL | 900V | 48A | - | TO-247AD | - | 18 ns | 3.1V @ 15V, 14A | - | 281 ns | PT | 62nC | 79A | 9ns/98ns | 413μJ (on), 287μJ (off) | - | - | - | - | - | No | RoHS Compliant | - | ||
| APT27GA90BD15 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT150GN60B2GAnlielectronics Тип | Microsemi Corporation |
Trans IGBT Chip N-CH 600V 220A 3-Pin(3+Tab) TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 24 Weeks | - | Through Hole | Through Hole | TO-247-3 Variant | - | - | SILICON | 600V | 1 | 400V, 150A, 1 Ω, 15V | - | -55°C~175°C TJ | Tube | 1999 | - | e1 | yes | Active | 1 (Unlimited) | 3 | - | TIN SILVER COPPER | LOW CONDUCTION LOSS, HIGH RELIABILITY | - | 536W | - | - | - | 3 | R-PSFM-T3 | - | Single | COLLECTOR | Standard | - | 536W | POWER CONTROL | N-CHANNEL | 600V | 220A | - | TO-247AD | - | 154 ns | 1.85V @ 15V, 150A | - | 575 ns | Trench Field Stop | 970nC | 450A | 44ns/430ns | 8.81mJ (on), 4.295mJ (off) | 30V | 6.5V | - | - | - | No | RoHS Compliant | Lead Free | ||
| APT150GN60B2G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT100GN60LDQ4GAnlielectronics Тип | Microsemi Corporation |
IGBT 600V 229A 625W TO264
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 25 Weeks | Tin | Through Hole | Through Hole | TO-264-3, TO-264AA | - | 10.6g | SILICON | 600V | 1 | 400V, 100A, 1 Ω, 15V | - | -55°C~175°C TJ | Tube | 1999 | - | e1 | yes | Active | 1 (Unlimited) | 3 | EAR99 | - | HIGH RELIABILITY | 600V | 625W | - | 100A | - | 3 | R-PSFM-T3 | - | Single | COLLECTOR | Standard | - | - | POWER CONTROL | N-CHANNEL | 600V | 229A | - | - | - | 96 ns | 1.85V @ 15V, 100A | 229A | 435 ns | Trench Field Stop | 600nC | 300A | 31ns/310ns | 4.75mJ (on), 2.675mJ (off) | 30V | 6.5V | 5.21mm | 26.49mm | 20.5mm | No | RoHS Compliant | Lead Free | ||
| APT100GN60LDQ4G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT80GA60BAnlielectronics Тип | Microsemi Corporation |
Trans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 33 Weeks | - | Through Hole | Through Hole | TO-247-3 | - | 38.000013g | SILICON | 600V | 1 | 400V, 47A, 4.7 Ω, 15V | - | -55°C~150°C TJ | Tube | 1999 | - | e3 | yes | Active | 1 (Unlimited) | 3 | - | PURE MATTE TIN | LOW CONDUCTION LOSS | - | 625W | - | - | - | 3 | R-PSFM-T3 | - | Single | COLLECTOR | Standard | - | - | POWER CONTROL | N-CHANNEL | 600V | 143A | - | TO-247AD | - | 52 ns | 2.5V @ 15V, 47A | 143A | 326 ns | PT | 230nC | 240A | 23ns/158ns | 840μJ (on), 751μJ (off) | 30V | 6V | 21.46mm | 16.26mm | 5.31mm | No | RoHS Compliant | - | ||
| APT80GA60B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT45GP120BGAnlielectronics Тип | Microsemi Corporation |
IGBT 1200V 100A 625W TO247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 23 Weeks | - | Through Hole | Through Hole | TO-247-3 | - | 38.000013g | SILICON | 1.2kV | 1 | 600V, 45A, 5 Ω, 15V | - | -55°C~150°C TJ | Tube | 1999 | POWER MOS 7® | e1 | yes | Active | 1 (Unlimited) | 3 | - | TIN SILVER COPPER | LOW CONDUCTION LOSS | 1.2kV | 625W | - | 100A | - | 3 | R-PSFM-T3 | - | Single | COLLECTOR | Standard | - | - | POWER CONTROL | N-CHANNEL | 1.2kV | 100A | - | TO-247AD | 1200V | 47 ns | 3.9V @ 15V, 45A | 100A | 230 ns | PT | 185nC | 170A | 18ns/102ns | 900μJ (on), 904μJ (off) | - | - | 5.31mm | 21.46mm | 16.26mm | No | RoHS Compliant | Lead Free | ||
| APT45GP120BG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT35GN120L2DQ2GAnlielectronics Тип | Microsemi Corporation |
IGBT 1200V 94A 379W TO264
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 29 Weeks | - | Through Hole | Through Hole | TO-264-3, TO-264AA | 3 | 10.6g | SILICON | 1.2kV | 1 | 800V, 35A, 2.2 Ω, 15V | - | -55°C~150°C TJ | Tube | - | - | e1 | yes | Active | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | HIGH RELIABILITY | 1.2kV | 379W | - | 94A | - | 3 | - | - | Single | COLLECTOR | Standard | - | - | POWER CONTROL | N-CHANNEL | 1.2kV | 94A | - | - | 1200V | 46 ns | 2.1V @ 15V, 35A | 94A | 465 ns | NPT, Trench Field Stop | 220nC | 105A | 24ns/300ns | 2.315mJ (off) | - | 6.5V | 5.21mm | 26.49mm | 20.5mm | No | RoHS Compliant | Lead Free | ||
| APT35GN120L2DQ2G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT15GP90BDQ1GAnlielectronics Тип | Microsemi Corporation |
IGBT 900V 43A 250W TO247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Through Hole | Through Hole | TO-247-3 | - | - | SILICON | 900V | 1 | 600V, 15A, 4.3 Ω, 15V | - | -55°C~150°C TJ | Tube | 1999 | POWER MOS 7® | e1 | yes | Not For New Designs | 1 (Unlimited) | 3 | - | TIN SILVER COPPER | LOW CONDUCTION LOSS | 900V | 250W | NOT SPECIFIED | 43A | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | Single | COLLECTOR | Standard | - | - | POWER CONTROL | N-CHANNEL | 900V | 43A | - | TO-247AD | - | 23 ns | 3.9V @ 15V, 15A | - | 170 ns | PT | 60nC | 60A | 9ns/33ns | 200μJ (off) | - | - | - | - | - | - | RoHS Compliant | Lead Free | ||
| APT15GP90BDQ1G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT50GN120L2DQ2GAnlielectronics Тип | Microsemi Corporation |
IGBT 1200V 134A 543W TO264
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 29 Weeks | - | Through Hole | Through Hole | TO-264-3, TO-264AA | 3 | 10.6g | SILICON | 1.2kV | 1 | 800V, 50A, 2.2 Ω, 15V | 320 ns | -55°C~150°C TJ | Tube | 1999 | - | e1 | yes | Active | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | HIGH RELIABILITY | 1.2kV | 543W | - | 134A | - | 3 | - | - | Single | COLLECTOR | Standard | 28 ns | - | POWER CONTROL | N-CHANNEL | 1.2kV | 134A | - | - | 1200V | 55 ns | 2.1V @ 15V, 50A | 134A | 600 ns | NPT, Trench Field Stop | 315nC | 150A | 28ns/320ns | 4495μJ (off) | - | 6.5V | 5.21mm | 26.49mm | 20.5mm | No | RoHS Compliant | Lead Free | ||
| APT50GN120L2DQ2G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT25GN120BGAnlielectronics Тип | Microsemi Corporation |
IGBT 1200V 67A 272W TO247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 24 Weeks | - | Through Hole | Through Hole | TO-247-3 | - | - | SILICON | 1.2kV | 1 | 800V, 25A, 1 Ω, 15V | 280 ns | -55°C~150°C TJ | Tube | 1999 | - | e1 | yes | Active | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | HIGH RELIABILITY | 1.2kV | 272W | - | 67A | - | 3 | R-PSFM-T3 | - | Single | COLLECTOR | Standard | 22 ns | - | POWER CONTROL | N-CHANNEL | 1.2kV | 67A | - | TO-247AD | 1200V | 39 ns | 2.1V @ 15V, 25A | - | 560 ns | Trench Field Stop | 155nC | 75A | 22ns/280ns | 2.15μJ (off) | 30V | 6.5V | - | - | - | No | RoHS Compliant | Lead Free | ||
| APT25GN120BG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT35GN120BGAnlielectronics Тип | Microsemi Corporation |
Trans IGBT Chip N-CH 1.2KV 94A 3-Pin(3+Tab) TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 24 Weeks | - | Through Hole | Through Hole | TO-247-3 | - | 38.000013g | SILICON | 1.2kV | 1 | 800V, 35A, 2.2 Ω, 15V | - | -55°C~150°C TJ | Tube | 1999 | - | e1 | yes | Active | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | HIGH RELIABILITY | 1.2kV | 379W | NOT SPECIFIED | 94A | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | Single | COLLECTOR | Standard | - | - | POWER CONTROL | N-CHANNEL | 1.2kV | 94A | - | TO-247AD | 1200V | 46 ns | 2.1V @ 15V, 35A | 94A | 465 ns | NPT, Trench Field Stop | 220nC | 105A | 24ns/300ns | 2.315mJ (off) | 30V | 6.5V | 5.31mm | 21.46mm | 16.26mm | - | RoHS Compliant | Lead Free | ||
| APT35GN120BG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT25GT120BRGAnlielectronics Тип | Microsemi Corporation |
Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 24 Weeks | - | Through Hole | Through Hole | TO-247-3 | - | 38.000013g | SILICON | 1.2kV | 1 | 800V, 25A, 5 Ω, 15V | - | -55°C~150°C TJ | Tube | 1999 | Thunderbolt IGBT® | e1 | yes | Active | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | 1.2kV | 347W | - | 54A | - | 3 | R-PSFM-T3 | - | Single | COLLECTOR | Standard | - | - | POWER CONTROL | N-CHANNEL | 1.2kV | 54A | - | TO-247AA | 1200V | 41 ns | 3.7V @ 15V, 25A | 54A | 220 ns | NPT | 170nC | 75A | 14ns/150ns | 930μJ (on), 720μJ (off) | - | - | 5.31mm | 21.46mm | 16.26mm | No | RoHS Compliant | Lead Free | ||
| APT25GT120BRG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT50GT60BRDQ2GAnlielectronics Тип | Microsemi Corporation |
Trans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 25 Weeks | - | Through Hole | Through Hole | TO-247-3 | - | 38.000013g | SILICON | 600V | 1 | 400V, 50A, 5 Ω, 15V | - | -55°C~150°C TJ | Tube | 1999 | Thunderbolt IGBT® | e1 | yes | Active | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | 600V | 446W | - | 110A | - | 3 | R-PSFM-T3 | - | Single | COLLECTOR | Standard | - | - | POWER CONTROL | N-CHANNEL | 600V | 110A | 22 ns | - | - | 46 ns | 2.5V @ 15V, 50A | 110A | 365 ns | NPT | 240nC | 150A | 14ns/240ns | 995μJ (on), 1070μJ (off) | 30V | 5V | 5.31mm | 21.46mm | 16.26mm | No | RoHS Compliant | Lead Free | ||
| APT50GT60BRDQ2G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT80GA60LD40Anlielectronics Тип | Microsemi Corporation |
Trans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-264
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 33 Weeks | - | Through Hole | Through Hole | TO-264-3, TO-264AA | - | 10.6g | SILICON | 600V | 1 | 400V, 47A, 4.7 Ω, 15V | - | -55°C~150°C TJ | Tube | 1999 | POWER MOS 8™ | e1 | yes | Active | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | LOW CONDUCTION LOSS | - | 625W | - | - | - | 3 | R-PSFM-T3 | - | Single | COLLECTOR | Standard | - | - | POWER CONTROL | N-CHANNEL | 600V | 143A | 22 ns | - | - | 52 ns | 2.5V @ 15V, 47A | 143A | 326 ns | PT | 230nC | 240A | 23ns/158ns | 840μJ (on), 751μJ (off) | - | - | 5.21mm | 26.49mm | 20.5mm | No | RoHS Compliant | - | ||
| APT80GA60LD40 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT50GN60BGAnlielectronics Тип | Microsemi Corporation |
Trans IGBT Chip N-CH 600V 107A 3-Pin(3+Tab) TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 24 Weeks | - | Through Hole | Through Hole | TO-247-3 | - | 38.000013g | SILICON | 600V | 1 | 400V, 50A, 4.3 Ω, 15V | - | -55°C~175°C TJ | Tube | 1999 | - | e1 | yes | Active | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | 600V | 366W | - | 107A | - | 3 | R-PSFM-T3 | - | Single | COLLECTOR | Standard | - | - | POWER CONTROL | N-CHANNEL | 600V | 107A | - | TO-247AD | - | 45 ns | 1.85V @ 15V, 50A | 107A | 400 ns | Trench Field Stop | 325nC | 150A | 20ns/230ns | 1185μJ (on), 1565μJ (off) | 30V | 6.5V | 5.31mm | 21.46mm | 16.26mm | No | RoHS Compliant | Lead Free | ||
| APT50GN60BG |
Индекс :
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