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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Weight | Transistor Element Material | Collector-Emitter Breakdown Voltage | Collector-Emitter Saturation Voltage | Current-Collector (Ic) (Max) | Number of Elements | Test Conditions | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Rise Time-Max | Polarity | Configuration | Element Configuration | Power Dissipation | Case Connection | Input Type | Turn On Delay Time | Power - Max | Transistor Application | Halogen Free | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Collector Emitter Voltage (VCEO) | Max Collector Current | Reverse Recovery Time | Continuous Drain Current (ID) | JEDEC-95 Code | Voltage - Collector Emitter Breakdown (Max) | Max Breakdown Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Continuous Collector Current | Turn Off Time-Nom (toff) | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
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![]() | Mfr. ТипIRG4IBC10UDPBFAnlielectronics Тип | Infineon Technologies |
IGBT 600V 6.8A 25W TO220FP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Through Hole | Through Hole | TO-220-3 Full Pack | - | 3 | - | SILICON | 600V | 2.15V | - | 1 | 480V, 5A, 100 Ω, 15V | - | -55°C~150°C TJ | Tube | 1999 | - | - | - | Last Time Buy | 1 (Unlimited) | 3 | Through Hole | EAR99 | - | ULTRA FAST | - | 600V | 25W | - | - | - | - | 6.8A | - | - | - | - | - | - | - | Single | 25W | ISOLATED | Standard | - | - | POWER CONTROL | - | 16ns | - | N-CHANNEL | 2.6V | 6.8A | 28 ns | - | TO-220AB | - | - | 56 ns | 2.6V @ 15V, 5A | - | 345 ns | - | 15nC | 27A | 40ns/87ns | 140μJ (on), 120μJ (off) | 20V | 6V | 210ns | 16.129mm | 10.7442mm | 4.826mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRG4IBC10UDPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAUIRGP4062D-EAnlielectronics Тип | Infineon Technologies |
Trans IGBT Chip N-CH 600V 48A 3-Pin(3 Tab) TO-247AD Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Through Hole | Through Hole | TO-247-3 | - | 3 | - | SILICON | 600V | 1.95V | - | 1 | 400V, 24A, 10 Ω, 15V | 104 ns | -55°C~175°C TJ | - | 2011 | - | - | - | Active | 1 (Unlimited) | 3 | - | EAR99 | - | - | - | - | 250W | - | - | - | - | - | - | - | - | - | - | - | - | Single | 250W | COLLECTOR | Standard | 40 ns | - | POWER CONTROL | - | - | - | N-CHANNEL | 600V | 48A | 89ns | - | TO-247AD | - | - | 64 ns | 1.95V @ 15V, 24A | - | 164 ns | - | 50nC | 72A | 41ns/104ns | 115μJ (on), 600μJ (off) | 20V | 6.5V | 41ns | 20.7mm | 15.87mm | 5.31mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| AUIRGP4062D-E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHGTG18N120BNDAnlielectronics Тип | ON Semiconductor |
IGBT 1200V 54A 390W TO247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | - | Through Hole | Through Hole | TO-247-3 | - | 3 | 6.39g | SILICON | 1.2kV | 2.45V | - | 1 | 960V, 18A, 3 Ω, 15V | 170 μs | -55°C~150°C TJ | Tube | 2011 | - | - | yes | Active | 1 (Unlimited) | 3 | - | EAR99 | - | LOW CONDUCTION LOSS | 8541.29.00.95 | 1.2kV | 390W | - | - | - | - | 54A | - | - | - | - | - | NPN | - | Single | 390W | - | Standard | 23 μs | - | MOTOR CONTROL | - | 22ns | - | - | 1.2kV | 54A | 75 ns | - | - | 1200V | - | 38 ns | 2.7V @ 15V, 18A | - | 345 ns | NPT | 165nC | 160A | 23ns/170ns | 1.9mJ (on), 1.8mJ (off) | 20V | - | 200ns | 20.82mm | 15.87mm | 4.82mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| HGTG18N120BND | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHGTG12N60C3DAnlielectronics Тип | ON Semiconductor |
IGBT 600V 24A 104W TO247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 36 Weeks | ACTIVE, NOT REC (Last Updated: 2 days ago) | - | Through Hole | Through Hole | TO-247-3 | - | 3 | 6.39g | SILICON | 600V | 1.65V | - | 1 | - | - | -40°C~150°C TJ | Tube | 1997 | - | e3 | yes | Not For New Designs | 1 (Unlimited) | 3 | - | EAR99 | Tin (Sn) | LOW CONDUCTION LOSS | 8541.29.00.95 | 600V | 104W | - | - | - | - | 24A | - | HGTG12N60 | - | - | - | - | - | Single | 104W | - | Standard | - | - | POWER CONTROL | - | - | - | N-CHANNEL | 600V | 24A | 42 ns | - | - | - | - | 30 ns | 2.2V @ 15V, 15A | - | 480 ns | - | 48nC | 96A | - | 380μJ (on), 900μJ (off) | - | - | - | 20.82mm | 15.87mm | 4.82mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| HGTG12N60C3D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIKZ75N65EH5XKSA1Anlielectronics Тип | Infineon Technologies |
Trans IGBT Chip N-CH 650V 90A 4-Pin TO-247 Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 26 Weeks | - | - | Through Hole | Through Hole | TO-247-4 | - | 4 | - | SILICON | 650V | - | - | 1 | 400V, 37.5A, 10 Ω, 15V | - | -40°C~175°C TJ | Tube | 2008 | TrenchStop™ 5 | e3 | yes | Active | 1 (Unlimited) | 4 | - | - | Tin (Sn) | - | - | - | 395W | SINGLE | - | NOT SPECIFIED | - | - | NOT SPECIFIED | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | COLLECTOR | Standard | - | 395W | POWER CONTROL | Halogen Free | - | - | N-CHANNEL | 650V | 90A | 58 ns | - | - | - | - | 37 ns | 2.1V @ 15V, 75A | - | 415 ns | - | 166nC | 300A | 26ns/347ns | 680μJ (on), 430μJ (off) | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| IKZ75N65EH5XKSA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипFGH25N120FTDSAnlielectronics Тип | ON Semiconductor |
IGBT 1200V 50A 313W TO247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 5 Weeks | ACTIVE (Last Updated: 4 days ago) | - | Through Hole | Through Hole | TO-247-3 | - | 3 | 6.39g | SILICON | 1.2kV | - | - | 1 | 600V, 25A, 10 Ω, 15V | - | -55°C~150°C TJ | Tube | 2016 | - | e3 | yes | Active | 1 (Unlimited) | 3 | - | EAR99 | Tin (Sn) | - | 8541.29.00.95 | - | 313W | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | COLLECTOR | Standard | - | 313W | POWER CONTROL | - | - | - | N-CHANNEL | 1.2kV | 50A | 535 ns | - | TO-247AB | 1200V | - | 63 ns | 2V @ 15V, 25A | - | 299 ns | Trench Field Stop | 169nC | 75A | 26ns/151ns | 1.42mJ (on), 1.16mJ (off) | 25V | 7.5V | - | 20.82mm | 15.87mm | 4.82mm | No | - | ROHS3 Compliant | - | ||
| FGH25N120FTDS | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSTGD5NB120SZT4Anlielectronics Тип | STMicroelectronics |
IGBT 1200V 10A 75W DPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | ACTIVE (Last Updated: 7 months ago) | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | 3 | 3.949996g | SILICON | 1.2kV | 2V | - | 1 | 960V, 5A, 1k Ω, 15V | 12.1 μs | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerMESH™ | e3 | - | Active | 1 (Unlimited) | 2 | - | EAR99 | - | - | - | 1.2kV | 75W | - | GULL WING | 260 | - | 5A | 30 | STGD5 | 3 | R-PSSO-G2 | - | - | - | Single | 55W | COLLECTOR | Standard | 690 ns | 75W | POWER CONTROL | - | 170ns | - | N-CHANNEL | 1.2kV | 10A | - | - | TO-252AA | 1200V | 1.2kV | 850 ns | 2V @ 15V, 5A | 5A | 14100 ns | - | - | - | 690ns/12.1μs | 2.59mJ (on), 9mJ (off) | 20V | 5V | - | 2.4mm | 6.6mm | 6.2mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| STGD5NB120SZT4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHGTG10N120BNDAnlielectronics Тип | ON Semiconductor |
IGBT 1200V 35A 298W TO247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | ACTIVE, NOT REC (Last Updated: 2 days ago) | - | Through Hole | Through Hole | TO-247-3 | - | 3 | 6.39g | SILICON | 1.2kV | 2.45V | - | 1 | 960V, 10A, 10 Ω, 15V | 165 ns | -55°C~150°C TJ | Tube | 2011 | - | e3 | yes | Not For New Designs | 1 (Unlimited) | 3 | - | EAR99 | Tin (Sn) | LOW CONDUCTION LOSS | 8541.29.00.95 | 1.2kV | 298W | - | - | - | - | 35A | - | - | - | - | - | - | - | Single | 298W | - | Standard | 23 ns | - | MOTOR CONTROL | - | 165ns | - | N-CHANNEL | 1.2kV | 35A | 70 ns | - | - | 1200V | - | 32 ns | 2.7V @ 15V, 10A | 35A | 330 ns | NPT | 100nC | 80A | 23ns/165ns | 850μJ (on), 800μJ (off) | - | - | - | 20.82mm | 15.87mm | 4.82mm | No | - | ROHS3 Compliant | Lead Free | ||
| HGTG10N120BND | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипFGA50T65SHDAnlielectronics Тип | ON Semiconductor |
IGBT 650V 100A 319W TO-3PN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | - | Through Hole | Through Hole | TO-3P-3, SC-65-3 | - | - | 6.401g | - | 650V | 2.14V | - | - | 400V, 50A, 6 Ω, 15V | - | -55°C~175°C TJ | Tube | 2015 | - | e3 | yes | Active | 1 (Unlimited) | - | - | EAR99 | Tin (Sn) | - | 8541.29.00.95 | - | 319W | - | - | NOT SPECIFIED | - | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | Standard | - | 319W | - | - | - | - | - | 2.1V | 100A | 34.6 ns | - | - | - | - | - | 2.1V @ 15V, 50A | - | - | Trench Field Stop | 87nC | 150A | 22.4ns/73.6ns | 1.28mJ (on), 384μJ (off) | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| FGA50T65SHD | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSTGWA40M120DF3Anlielectronics Тип | STMicroelectronics |
STMICROELECTRONICS STGWA40M120DF3 IGBT Single Transistor, 80 A, 1.85 V, 468 W, 1.2 kV, TO-247, 3 Pins
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 30 Weeks | ACTIVE (Last Updated: 8 months ago) | - | Through Hole | Through Hole | TO-247-3 | - | 3 | 38.000013g | - | 1.2kV | 1.85V | - | - | 600V, 40A, 10 Ω, 15V | - | -55°C~175°C TJ | Tube | - | - | - | - | Active | 1 (Unlimited) | - | - | EAR99 | - | - | - | - | 468W | - | - | NOT SPECIFIED | - | - | NOT SPECIFIED | STGWA40 | - | - | - | - | - | Single | - | - | Standard | - | 468W | - | - | - | - | N-CHANNEL | 1.2kV | 80A | 355 ns | - | - | 1200V | - | - | 2.3V @ 15V, 40A | - | - | Trench Field Stop | 125nC | 160A | 35ns/140ns | 1.03mJ (on), 480μJ (off) | 20V | 7V | - | - | - | - | - | No SVHC | ROHS3 Compliant | - | ||
| STGWA40M120DF3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIKQ50N120CH3XKSA1Anlielectronics Тип | Infineon Technologies |
IGBT HS SW 1200V 50A TO-247-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | - | Through Hole | TO-247-3 | NO | - | - | SILICON | - | - | 100A | 1 | 600V, 50A, 10 Ω, 15V | - | -40°C~175°C TJ | Tube | 2014 | - | e3 | - | Active | 1 (Unlimited) | 3 | - | EAR99 | Tin (Sn) | - | - | - | - | SINGLE | - | NOT SPECIFIED | - | - | NOT SPECIFIED | - | - | R-PSFM-T3 | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | Standard | - | 652W | POWER CONTROL | - | - | - | N-CHANNEL | - | - | - | - | - | 1200V | - | 68 ns | 2.35V @ 15V, 50A | - | 466 ns | - | 235nC | 200A | 34ns/297ns | 3mJ (on), 1.9mJ (off) | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IKQ50N120CH3XKSA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипNGTB50N120FL2WGAnlielectronics Тип | ON Semiconductor |
IGBT Transistors 1200V/50A FAST IGBT FSII
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | ACTIVE (Last Updated: 6 days ago) | - | Through Hole | Through Hole | TO-247-3 | - | 3 | 6.500007g | - | 1.2kV | 2.2V | - | - | 600V, 50A, 10 Ω, 15V | - | -55°C~175°C TJ | Tube | 2008 | - | e3 | yes | Active | 1 (Unlimited) | - | - | EAR99 | Tin (Sn) | - | - | - | 535W | - | - | NOT SPECIFIED | - | - | NOT SPECIFIED | - | 3 | - | - | - | - | Single | - | - | Standard | - | 535W | - | - | - | - | N-CHANNEL | 1.2kV | 100A | 256 ns | - | - | 1200V | - | - | 2.2V @ 15V, 50A | - | - | Trench Field Stop | 311nC | 200A | 118ns/282ns | 4.4mJ (on), 1.4mJ (off) | 20V | 6.5V | - | 21.4mm | 16.25mm | 5.3mm | - | No SVHC | ROHS3 Compliant | Lead Free | ||
| NGTB50N120FL2WG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипFGA50N100BNTD2Anlielectronics Тип | ON Semiconductor |
IGBT 1000V 50A 156W TO3P
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | ACTIVE (Last Updated: 4 days ago) | - | Through Hole | Through Hole | TO-3P-3, SC-65-3 | - | 3 | 6.401g | SILICON | 1kV | 1.5V | - | 1 | 600V, 60A, 10 Ω, 15V | - | -55°C~150°C TJ | Tube | 2013 | - | e3 | yes | Active | 1 (Unlimited) | 3 | - | EAR99 | Tin (Sn) | - | 8541.29.00.95 | - | 156W | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | Standard | - | 156W | POWER CONTROL | - | - | - | N-CHANNEL | 1kV | 50A | 75 ns | - | - | 1000V | - | 102 ns | 2.9V @ 15V, 60A | - | 308 ns | NPT and Trench | 257nC | 200A | 34ns/243ns | - | 25V | 7V | 100ns | 20.1mm | 15.8mm | 5mm | No | - | ROHS3 Compliant | - | ||
| FGA50N100BNTD2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипFGB20N60SFD-F085Anlielectronics Тип | ON Semiconductor |
IGBT 600V 40A 208W D2PAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | - | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | - | 3 | 1.31247g | SILICON | 600V | 2.4V | - | 1 | 400V, 20A, 10 Ω, 15V | - | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | Active | 1 (Unlimited) | 2 | - | - | Tin (Sn) | - | - | - | 208W | - | GULL WING | NOT SPECIFIED | not_compliant | - | NOT SPECIFIED | FGB20N60 | - | R-PSSO-G2 | 21ns | - | - | Single | - | COLLECTOR | Standard | - | 208W | POWER CONTROL | - | - | - | N-CHANNEL | 600V | 40A | 111 ns | - | - | - | 600V | 28 ns | 2.85V @ 15V, 20A | - | 123 ns | Field Stop | 63nC | 60A | 10ns/90ns | 310μJ (on), 130μJ (off) | 20V | 6.5V | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| FGB20N60SFD-F085 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипFGH75N60UFTUAnlielectronics Тип | ON Semiconductor |
FAIRCHILD SEMICONDUCTOR FGH75N60UFTU IGBT Single Transistor, General Purpose, 150 A, 600 V, 452 W, 600 V, TO-247AB, 3 Pins
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | ACTIVE (Last Updated: 5 days ago) | - | Through Hole | Through Hole | TO-247-3 | - | 3 | 6.39g | - | 600V | 600V | - | - | 400V, 75A, 3 Ω, 15V | - | -55°C~150°C TJ | Tube | - | - | e3 | yes | Active | 1 (Unlimited) | - | - | EAR99 | Tin (Sn) | - | 8541.29.00.95 | - | 452W | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | Standard | - | 452W | - | - | - | - | N-CHANNEL | 600V | 150A | - | - | - | - | - | - | 2.4V @ 15V, 75A | - | - | Field Stop | 250nC | 225A | 27ns/128ns | 3.05mJ (on), 1.35mJ (off) | 20V | 6.5V | 80ns | 20.6mm | 15.6mm | 4.7mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FGH75N60UFTU | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIRG4PH40UDPBFAnlielectronics Тип | Infineon Technologies |
IGBT 1200V 41A 160W TO247AC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | - | - | Through Hole | Through Hole | TO-247-3 | - | 3 | - | SILICON | 1.2kV | 2.43V | - | 1 | 800V, 21A, 10 Ω, 15V | 150 ns | -55°C~150°C TJ | Bulk | 2004 | - | - | - | Last Time Buy | 1 (Unlimited) | 3 | Through Hole | EAR99 | - | ULTRA FAST SOFT RECOVERY | - | 1.2kV | 160W | - | - | - | - | 41A | - | - | - | - | - | - | - | Single | 160W | COLLECTOR | Standard | 46 ns | - | POWER CONTROL | - | 59ns | - | N-CHANNEL | 3.1V | 41A | 63 ns | - | TO-247AC | 1200V | - | 74 ns | 3.1V @ 15V, 21A | - | 750 ns | - | 86nC | 82A | 46ns/97ns | 1.8mJ (on), 1.93mJ (off) | 20V | 6V | - | 20.7mm | 15.87mm | 5.3086mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRG4PH40UDPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIKP15N65H5XKSA1Anlielectronics Тип | Infineon Technologies |
Trans IGBT Chip N-CH 650V 30A 3-Pin TO-220 Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Through Hole | Through Hole | TO-220-3 | - | 3 | 6.000006g | - | 650V | 1.65V | - | - | 400V, 7.5A, 39 Ω, 15V | - | -40°C~175°C TJ | Tube | 2008 | TrenchStop® | e3 | yes | Active | 1 (Unlimited) | - | - | EAR99 | Tin (Sn) | - | - | - | 105W | - | - | NOT SPECIFIED | - | - | NOT SPECIFIED | - | - | - | - | - | - | Single | - | - | Standard | - | 105W | - | Halogen Free | - | - | - | 1.65V | 30A | 48 ns | - | - | - | - | - | 2.1V @ 15V, 15A | - | - | - | 38nC | 45A | 17ns/160ns | 120μJ (on), 50μJ (off) | - | - | - | 15.95mm | 10.36mm | 4.57mm | - | Unknown | ROHS3 Compliant | Lead Free | ||
| IKP15N65H5XKSA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIRG4IBC30UDPBFAnlielectronics Тип | Infineon Technologies |
IGBT 600V 17A 45W TO220FP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Through Hole | Through Hole | TO-220-3 Full Pack | - | 3 | 2.299997g | SILICON | 600V | 1.95V | - | 1 | 480V, 12A, 23 Ω, 15V | 91 ns | -55°C~150°C TJ | Tube | 2000 | - | - | - | Last Time Buy | 1 (Unlimited) | 3 | Through Hole | EAR99 | - | ULTRA FAST SOFT RECOVERY | - | 600V | 45W | - | - | - | - | 17A | - | - | - | - | - | - | - | Single | 45W | ISOLATED | Standard | 40 ns | - | POWER CONTROL | - | 21ns | - | N-CHANNEL | 2.1V | 17A | 42 ns | - | TO-220AB | - | - | 62 ns | 2.1V @ 15V, 12A | - | 300 ns | - | 50nC | 68A | 40ns/91ns | 380μJ (on), 160μJ (off) | 20V | 6V | - | 9.02mm | 10.6172mm | 4.826mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRG4IBC30UDPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSTGF10NB60SDAnlielectronics Тип | STMicroelectronics |
STMICROELECTRONICS STGF10NB60SD IGBT Single Transistor, 20 A, 1.8 V, 25 W, 600 V, TO-220FP, 3 Pins
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | ACTIVE (Last Updated: 8 months ago) | - | Through Hole | Through Hole | TO-220-3 Full Pack | - | 3 | - | SILICON | 600V | 1.8V | - | 1 | 480V, 10A, 1k Ω, 15V | - | -55°C~150°C TJ | Tube | - | PowerMESH™ | e3 | - | Active | 1 (Unlimited) | 3 | - | EAR99 | Matte Tin (Sn) - annealed | - | - | 600V | 25W | - | - | - | - | 10A | - | STGF10 | 3 | - | - | - | - | Single | 25W | ISOLATED | Standard | - | - | POWER CONTROL | - | 460ns | 600V | N-CHANNEL | 600V | 23A | 37ns | 20A | TO-220AB | - | 600V | 1160 ns | 1.75V @ 15V, 10A | - | 3100 ns | - | 33nC | 80A | 700ns/1.2μs | 600μJ (on), 5mJ (off) | 20V | 5V | - | 20mm | 10.4mm | 4.6mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| STGF10NB60SD | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIRG4BC30SPBFAnlielectronics Тип | Infineon Technologies |
IGBT 600V 34A 100W TO220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Through Hole | Through Hole | TO-220-3 | - | 3 | - | SILICON | 600V | 1.4V | - | 1 | 480V, 18A, 23 Ω, 15V | 540 ns | -55°C~150°C TJ | Tube | 2000 | - | e3 | - | Last Time Buy | 1 (Unlimited) | 3 | Through Hole | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | - | - | 600V | 100W | SINGLE | - | 250 | - | 34A | 30 | - | - | - | - | - | - | Dual | 100W | COLLECTOR | Standard | 22 ns | - | POWER CONTROL | - | 18ns | - | N-CHANNEL | 1.6V | 34A | - | - | TO-220AB | - | - | 40 ns | 1.6V @ 15V, 18A | - | 1550 ns | - | 50nC | 68A | 22ns/540ns | 260μJ (on), 3.45mJ (off) | 20V | 6V | 590ns | 15.24mm | 10.54mm | 4.69mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRG4BC30SPBF |
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